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- All Subjects: psychology
- All Subjects: Materials Science
- Creators: Smith, David J.
- Creators: Roberts, Nicole A.
- Status: Published
Description
The purpose of this study was to investigate the effect of partial exemplar experience on category formation and use. Participants had either complete or limited access to the three dimensions that defined categories by dimensions within different modalities. The concept of "crucial dimension" was introduced and the role it plays in category definition was explained. It was hypothesized that the effects of partial experience are not explained by a shifting of attention between dimensions (Taylor & Ross, 2009) but rather by an increased reliance on prototypical values used to fill in missing information during incomplete experiences. Results indicated that participants (1) do not fill in missing information with prototypical values, (2) integrate information less efficiently between different modalities than within a single modality, and (3) have difficulty learning only when partial experience prevents access to diagnostic information.
ContributorsCrawford, Thomas (Author) / Homa, Donald (Thesis advisor) / Mcbeath, Micheal (Committee member) / Glenberg, Arthur (Committee member) / Arizona State University (Publisher)
Created2011
Description
Ordered mesoporous materials have tunable pore sizes between 2 and 50 nm and are characterized by ordered pore structures and high surface areas (~1000 m2/g). This makes them particularly favorable for a number of membrane applications such as protein separation, polymer extrusion, nanowire fabrication and membrane reactors. These membranes can be fabricated as top-layers on macroporous supports or as embedded membranes in a dense matrix. The first part of the work deals with the hydrothermal synthesis and water-vapor/oxygen separation properties of supported MCM-48 and a new Al-MCM-48 type membrane for potential use in air conditioning systems. Knudsen-type permeation is observed in these membranes. The combined effect of capillary condensation and the aluminosilicate matrix resulted in the highest separation factor (142) in Al-MCM-48 membranes, with a water vapor permeance of 6×10-8mol/m2Pas. The second part focuses on synthesis of embedded mesoporous silica membranes with helically ordered pores by a novel Counter Diffusion Self-Assembly (CDSA) method. This method is an extension of the interfacial synthesis method for fiber synthesis using tetrabutylorthosilicate (TBOS) and cetyltrimethylammonium bromide (CTAB) as the silica source and surfactant respectively. The initial part of this study determined the effect of TBOS height and humidity on fiber formation. From this study, the range of TBOS heights for best microscopic and macroscopic ordering were established. Next, the CDSA method was used to successfully synthesize membranes, which were characterized to have good support plugging and an ordered pore structure. Factors that influence membrane synthesis and plug microstructure were determined. SEM studies revealed the presence of gaps between the plugs and support pores, which occur due to shrinking of the plug on drying. Development of a novel liquid deposition method to seal these defects constituted the last part of this work. Post sealing, excess silica was removed by etching with hydrofluoric acid. Membrane quality was evaluated at each step using SEM and gas permeation measurements. After surfactant removal by liquid extraction, the membranes exhibited an O2 permeance of 1.65x10-6mol/m2.Pa.s and He/O2 selectivity of 3.30. The successful synthesis of this membrane is an exciting new development in the area of ordered mesoporous membrane technology.
ContributorsSeshadri, Shriya (Author) / Lin, Jerry Y. S. (Thesis advisor) / Dai, Lenore (Committee member) / Rege, Kaushal (Committee member) / Smith, David J. (Committee member) / Vogt, Bryan (Committee member) / Arizona State University (Publisher)
Created2011
Description
III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced over the past decade. But the progress of green emission light emitting devices has been limited by the incorporation of indium in the alloy, mainly due to phase separation. This difficulty could be addressed by studying the growth and thermodynamics of these alloys. Knowledge of thermodynamic phase stabilities and of pressure - temperature - composition phase diagrams is important for an understanding of the boundary conditions of a variety of growth techniques. In this dissertation a study of the phase separation of indium gallium nitride is conducted using a regular solution model of the ternary alloy system. Graphs of Gibbs free energy of mixing were produced for a range of temperatures. Binodal and spinodal decomposition curves show the stable and unstable regions of the alloy in equilibrium. The growth of gallium nitride and indium gallium nitride was attempted by the reaction of molten gallium - indium alloy with ammonia at atmospheric pressure. Characterization by X-ray diffraction, photoluminescence, and secondary electron microscopy show that the samples produced by this method contain only gallium nitride in the hexagonal phase. The instability of indium nitride at the temperatures required for activation of ammonia accounts for these results. The photoluminescence spectra show a correlation between the intensity of a broad green emission, related to native defects, and indium composition used in the molten alloy. A different growth method was used to grow two columnar-structured gallium nitride films using ammonium chloride and gallium as reactants and nitrogen and ammonia as carrier gasses. Investigation by X-ray diffraction and spatially-resolved cathodoluminescence shows the film grown at higher temperature to be primarily hexagonal with small quantities of cubic crystallites, while the one grown at lower temperature to be pure hexagonal. This was also confirmed by low temperature photoluminescence measurements. The results presented here show that cubic and hexagonal crystallites can coexist, with the cubic phase having a much sharper and stronger luminescence. Controlled growth of the cubic phase GaN crystallites can be of use for high efficiency light detecting and emitting devices. The ammonolysis of a precursor was used to grow InGaN powders with different indium composition. High purity hexagonal GaN and InN were obtained. XRD spectra showed complete phase separation for samples with x < 30%, with ~ 9% indium incorporation in the 30% sample. The presence of InGaN in this sample was confirmed by PL measurements, where luminescence from both GaN and InGaN band edge are observed. The growth of higher indium compositions samples proved to be difficult, with only the presence of InN in the sample. Nonetheless, by controlling parameters like temperature and time may lead to successful growth of this III-nitride alloy by this method.
ContributorsHill, Arlinda (Author) / Ponce, Fernando A. (Thesis advisor) / Chamberlin, Ralph V (Committee member) / Sankey, Otto F (Committee member) / Smith, David J. (Committee member) / Tsen, Kong-Thon (Committee member) / Arizona State University (Publisher)
Created2011
Description
Intuitive decision making refers to decision making based on situational pattern recognition, which happens without deliberation. It is a fast and effortless process that occurs without complete awareness. Moreover, it is believed that implicit learning is one means by which a foundation for intuitive decision making is developed. Accordingly, the present study investigated several factors that affect implicit learning and the development of intuitive decision making in a simulated real-world environment: (1) simple versus complex situational patterns; (2) the diversity of the patterns to which an individual is exposed; (3) the underlying mechanisms. The results showed that simple patterns led to higher levels of implicit learning and intuitive decision-making accuracy than complex patterns; increased diversity enhanced implicit learning and intuitive decision-making accuracy; and an embodied mechanism, labeling, contributes to the development of intuitive decision making in a simulated real-world environment. The results suggest that simulated real-world environments can provide the basis for training intuitive decision making, that diversity is influential in the process of training intuitive decision making, and that labeling contributes to the development of intuitive decision making. These results are interpreted in the context of applied situations such as military applications involving remotely piloted aircraft.
ContributorsCovas-Smith, Christine Marie (Author) / Cooke, Nancy J. (Thesis advisor) / Patterson, Robert (Committee member) / Glenberg, Arthur (Committee member) / Homa, Donald (Committee member) / Arizona State University (Publisher)
Created2011
Description
Separation from a loved one is a highly stressful event. The range and intensity of emotions accompanying such a separation arguably are amplified when one's spouse deploys. This thesis examines at-home spouses (AHSs) of deployed military and how emotion, marital satisfaction, and communication are impacted throughout the deployment cycle. Additionally, I explore technology as a possible coping mechanism to help AHSs adapt and overcome stressfulness of deployment. One hundred sixty-six married females with a partner currently deployed, anticipating deployment, or recently returned from deployment completed an on-line survey. It was predicted AHSs would experience specific emotions during each phase, categorized as "anticipatory," (e.g., anger, worry) "absence" (e.g., lonely, sad) or "post" (e.g., happiness, relief); marital satisfaction also was predicted to be higher among spouses whose partner recently returned from deployment versus was deployed or anticipating deployment. Data showed AHSs whose partner was anticipating or currently deployed reported more "anticipatory" and "absence" emotions than AHSs with a recently returned partner. The former two groups did not differ in these emotions. AHSs with a recently returned partner reported more "post" emotions than the other two groups. Marital satisfaction did not differ based on deployment status. It was also predicted that among AHSs with a currently deployed partner, less negative emotion upon deployment would be associated with more frequent communication during deployment. Data showed AHSs who reported less negative emotion upon deployment engaged in more frequent communication with their deployed partner. Lastly, I predicted AHSs whose partners are currently deployed and who prefer modes of communication allowing direct contact (e.g., Skype) will experience less negative emotions than AHSs who prefer indirect contact (e.g., e-mail). Data showed reports of negative emotion did not differ based on preference for direct versus indirect communication. Therefore, negative emotions may develop and persist before and during deployment, but when the partner returns home, spouses do experience a rebound of positive emotions. Additionally, emotions at the time of deployment may be useful in predicting spouses' communication frequency during deployment. Findings aim to provide knowledge of family life during separation and explore technology as a possible coping mechanism for AHSs.
ContributorsPowell, Katrina D (Author) / Roberts, Nicole A. (Thesis advisor) / Burleson, Mary H. (Committee member) / Hall, Deborah (Committee member) / Arizona State University (Publisher)
Created2011
Description
HgCdTe is the dominant material currently in use for infrared (IR) focal-plane-array (FPA) technology. In this dissertation, transmission electron microscopy (TEM) was used for the characterization of epitaxial HgCdTe epilayers and HgCdTe-based devices. The microstructure of CdTe surface passivation layers deposited either by hot-wall epitaxy (HWE) or molecular beam epitaxy (MBE) on HgCdTe heterostructures was evaluated. The as-deposited CdTe passivation layers were polycrystalline and columnar. The CdTe grains were larger and more irregular when deposited by HWE, whereas those deposited by MBE were generally well-textured with mostly vertical grain boundaries. Observations and measurements using several TEM techniques showed that the CdTe/HgCdTe interface became considerably more abrupt after annealing, and the crystallinity of the CdTe layer was also improved. The microstructure and compositional profiles of CdTe(211)B/ZnTe/Si(211) heterostructures grown by MBE was investigated. Many inclined {111}-type stacking faults were present throughout the thin ZnTe layer, terminating near the point of initiation of CdTe growth. A rotation angle of about 3.5° was observed between lattice planes of the Si substrate and the final CdTe epilayer. Lattice parameter measurement and elemental profiles indicated that some local intermixing of Zn and Cd had taken place. The average widths of the ZnTe layer and the (Cd, Zn)Te transition region were found to be roughly 6.5 nm and 3.5 nm, respectively. Initial observations of CdTe(211)B/GaAs(211) heterostructures indicated much reduced defect densities near the vicinity of the substrate and within the CdTe epilayers. HgCdTe epilayers grown on CdTe(211)B/GaAs(211) composite substrate were generally of high quality, despite the presence of precipitates at the HgCdTe/CdTe interface. The microstructure of HgCdSe thin films grown by MBE on ZnTe/Si(112) and GaSb(112) substrates were investigated. The quality of the HgCdSe growth was dependent on the growth temperature and materials flux, independent of the substrate. The materials grown at 100°C were generally of high quality, while those grown at 140°C had {111}-type stacking defects and high dislocation densities. For epitaxial growth of HgCdSe on GaSb substrates, better preparation of the GaSb buffer layer will be essential in order to ensure that high-quality HgCdSe can be grown.
ContributorsZhao, Wenfeng (Author) / Smith, David J. (Thesis advisor) / McCartney, Martha (Committee member) / Carpenter, Ray (Committee member) / Bennett, Peter (Committee member) / Treacy, Michael J. (Committee member) / Arizona State University (Publisher)
Created2011
Description
The objective of this study was to examine the potential effects of long term hormone replacement therapy on cardiovascular autonomic nervous system responses to laboratory social stressors. The participants were 38 postmenopausal women, 18 using estrogen and progesterone hormone replacement therapy for at least 2 years and 20 control participants without hormone replacement therapy. All women completed orthostasis (standing and sitting), then speech and math tasks (speech and math were counterbalanced). Cardiovascular measures of sympathetic nervous system (pre-ejection period, PEP) and parasympathetic nervous system (respiratory sinus arrhythmia, RSA) along with heart rate were collected throughout all periods (baseline, orthostasis, and stressors). For orthostasis, results of mixed analyses of variance (ANOVAs) showed expected period effects for heart rate, RSA and PEP, but no group or group by period interaction was significant. For the psychological stressors, period main effects were significant for all three variables, suggesting that the tasks were effective at inducing stress. Also, there was a significant interaction between group and period for RSA, demonstrated by greater decrease during the psychological stressor period in the group using HRT. The interactions between group and period for heart rate and PEP were non-significant. These findings support the notion that HRT may slow age-related decreases in parasympathetic responsiveness. Furthermore, changes in vagal reactivity in relation to use of HRT appear to occur within mechanisms involving response and coping with psychological stressors, rather than mechanisms that accommodate basic physiological task such as orthostasis.
ContributorsValancova-Acevedo, Katarina (Author) / Burleson, Mary H. (Thesis advisor) / Roberts, Nicole A. (Committee member) / Newman, Matt L. (Committee member) / Arizona State University (Publisher)
Created2013
Description
Previous studies have established a link between parenting style (e.g. authoritarian, authoritative, permissive) and depression in children and adolescents. Parenting factors are also implicated in the development of emotion regulation. There is a gap in the literature, however, concerning perceptions of parenting in relation to adult depression. The current study examined the effect of parenting on reported adult depressive symptoms. Of interest was the role of emotion regulation strategies in this relationship. Participants were recruited through Amazon Mechanical Turk, and the sample consisted of 302 adults (125 males, 177 females) ranging in age from 18 to 65. Measures of how participants were parented by their mothers and fathers, emotion regulation strategies most frequently utilized, and current depressive symptoms were collected using an online survey. The emotion regulation strategy, positive reappraisal, was found to moderate the relation between maternal authoritative parenting and depression. Permissive parenting was also significantly predictive of depression, but catastrophizing fully mediated only the relation between maternal permissive parenting and depressive symptoms. Authoritarian parenting was unrelated to depression and emotion regulation in this study. The findings of this study indicate that the effects of how an individual was parented may persist into adulthood. Implications of these findings and future directions for further research are discussed.
ContributorsHuisstede, Lauren van (Author) / Miller, Paul A. (Thesis advisor) / Tinsley, Barbara (Committee member) / Roberts, Nicole A. (Committee member) / Arizona State University (Publisher)
Created2013
Description
HgCdTe is currently the dominant material for infrared sensing and imaging, and is usually grown on lattice-matched bulk CdZnTe (CZT) substrates. There have been significant recent efforts to identify alternative substrates to CZT as well as alternative detector materials to HgCdTe. In this dissertation research, a wide range of transmission electron microscopy (TEM) imaging and analytical techniques was used in the characterization of epitaxial HgCdTe and related materials and substrates for third generation IR detectors. ZnTe layers grown on Si substrates are considered to be promising candidates for lattice-matched, large-area, and low-cost composite substrates for deposition of II-VI and III-V compound semiconductors with lattice constants near 6.1 Å. After optimizing MBE growth conditions including substrate pretreatment prior to film growth, as well as nucleation and growth temperatures, thick ZnTe/Si films with high crystallinity, low defect density, and excellent surface morphology were achieved. Changes in the Zn/Te flux ratio used during growth were also investigated. Small-probe microanalysis confirmed that a small amount of As was present at the ZnTe/Si interface. A microstructural study of HgCdTe/CdTe/GaAs (211)B and CdTe/GaAs (211)B heterostructures grown using MBE was carried out. High quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed. In the case of HgCdTe/CdTe/ GaAs(211)B, thin HgTe buffer layers between HgCdTe and CdTe were also investigated for improving the HgCdTe crystal quality. A set of ZnTe layers epitaxially grown on GaSb(211)B substrates using MBE was studied using high resolution X-ray diffraction (HRXRD) measurements and TEM characterization in order to investigate conditions for defect-free growth. HRXRD results gave critical thickness estimates between 350 nm and 375 nm, in good agreement with theoretical predictions. Moreover, TEM results confirmed that ZnTe layers with thicknesses of 350 nm had highly coherent interfaces and very low dislocation densities, unlike samples with the thicker ZnTe layers.
ContributorsKim, Jae Jin (Author) / Smith, David J. (Thesis advisor) / McCartney, Martha R. (Committee member) / Alford, Terry L. (Committee member) / Crozier, Peter A. (Committee member) / Arizona State University (Publisher)
Created2012
Description
High electron mobility transistors (HEMTs) based on Group III-nitride heterostructures have been characterized by advanced electron microscopy methods including off-axis electron holography, nanoscale chemical analysis, and electrical measurements, as well as other techniques. The dissertation was organized primarily into three topical areas: (1) characterization of near-gate defects in electrically stressed AlGaN/GaN HEMTs, (2) microstructural and chemical analysis of the gate/buffer interface of AlN/GaN HEMTs, and (3) studies of the impact of laser-liftoff processing on AlGaN/GaN HEMTs. The electrical performance of stressed AlGaN/GaN HEMTs was measured and the devices binned accordingly. Source- and drain-side degraded, undegraded, and unstressed devices were then prepared via focused-ion-beam milling for examination. Defects in the near-gate region were identified and their correlation to electrical measurements analyzed. Increased gate leakage after electrical stressing is typically attributed to "V"-shaped defects at the gate edge. However, strong evidence was found for gate metal diffusion into the barrier layer as another contributing factor. AlN/GaN HEMTs grown on sapphire substrates were found to have high electrical performance which is attributed to the AlN barrier layer, and robust ohmic and gate contact processes. TEM analysis identified oxidation at the gate metal/AlN buffer layer interface. This thin a-oxide gate insulator was further characterized by energy-dispersive x-ray spectroscopy and energy-filtered TEM. Attributed to this previously unidentified layer, high reverse gate bias up to −30 V was demonstrated and drain-induced gate leakage was suppressed to values of less than 10−6 A/mm. In addition, extrinsic gm and ft * LG were improved to the highest reported values for AlN/GaN HEMTs fabricated on sapphire substrates. Laser-liftoff (LLO) processing was used to separate the active layers from sapphire substrates for several GaN-based HEMT devices, including AlGaN/GaN and InAlN/GaN heterostructures. Warpage of the LLO samples resulted from relaxation of the as-grown strain and strain arising from dielectric and metal depositions, and this strain was quantified by both Newton's rings and Raman spectroscopy methods. TEM analysis demonstrated that the LLO processing produced no detrimental effects on the quality of the epitaxial layers. TEM micrographs showed no evidence of either damage to the ~2 μm GaN epilayer generated threading defects.
ContributorsJohnson, Michael R. (Author) / Mccartney, Martha R (Thesis advisor) / Smith, David J. (Committee member) / Goodnick, Stephen (Committee member) / Shumway, John (Committee member) / Chen, Tingyong (Committee member) / Arizona State University (Publisher)
Created2012