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- Genre: Doctoral Dissertation
Description
Family adaptation to child developmental disability is a dynamic transactional process that has yet to be tested in a longitudinal, rigorous fashion. In addition, although children with developmental delays frequently have behavior problems, not enough research has examined possible underlying mechanisms in the relation between child developmental delay, adaptation and behavior problems. In the current study, factor analysis examined how best to conceptualize the construct of family adaptation to developmental delay. Also, longitudinal growth curve modeling tested models in which child behavior problems mediated the relation between developmental risk and indices of family adaptation. Participants included 130 typically developing children and their families (Mental Development Index [MDI] > 85) and 104 children with developmental delays and their families (MDI < 85). Data were collected yearly between the ages of three and eight as part of a multi-site, longitudinal investigation examining the interrelations among children's developmental status, family processes, and the emergence of child psychopathology. Results of the current study indicated that adaptation is best conceptualized as a multi-index construct. Different aspects of adaptation changed in unique ways over time, with some facets of adaptation remaining stable while others fluctuated. Child internalizing and externalizing behavior problems were found to decrease over time for both children with developmental delays and typically developing children. Child behavior problems were also found to mediate the relation between developmental risk and family adaptation for over half of the mediation pathways. Significant mediation results indicated that children with developmental delays showed higher early levels of behavior problems, which in turn was associated with more maladaptive adaptation. These findings provide further evidence that families of children with developmental delays experience both positive and more challenging changes in their families over time. This study implies important next steps for research and clinical practice in the area of developmental disability.
ContributorsPedersen y Arbona, Anita (Author) / Crnic, Keith A (Thesis advisor) / Sandler, Irwin (Committee member) / Lemery, Kathryn (Committee member) / Enders, Craig (Committee member) / Arizona State University (Publisher)
Created2011
Description
An emerging body of literature suggests that humans likely have multiple threat avoidance systems that enable us to detect and avoid threats in our environment, such as disease threats and physical safety threats. These systems are presumed to be domain-specific, each handling one class of potential threats, and previous research generally supports this assumption. Previous research has not, however, directly tested the domain-specificity of disease avoidance and self-protection by showing that activating one threat management system does not lead to responses consistent only with a different threat management system. Here, the domain- specificity of the disease avoidance and self-protection systems is directly tested using the lexical decision task, a measure of stereotype accessibility, and the implicit association test. Results, although inconclusive, more strongly support a series of domain-specific threat management systems than a single, domain- general system
ContributorsAnderson, Uriah Steven (Author) / Kenrick, Douglas T. (Thesis advisor) / Shiota, Michelle N. (Committee member) / Neuberg, Steven L. (Committee member) / Becker, David V (Committee member) / Arizona State University (Publisher)
Created2011
Description
Microfluidics is the study of fluid flow at very small scales (micro -- one millionth of a meter) and is prevalent in many areas of science and engineering. Typical applications include lab-on-a-chip devices, microfluidic fuel cells, and DNA separation technologies. Many of these microfluidic devices rely on micron-resolution velocimetry measurements to improve microchannel design and characterize existing devices. Methods such as micro particle imaging velocimetry (microPIV) and micro particle tracking velocimetry (microPTV) are mature and established methods for characterization of steady 2D flow fields. Increasingly complex microdevices require techniques that measure unsteady and/or three dimensional velocity fields. This dissertation presents a method for three-dimensional velocimetry of unsteady microflows based on spinning disk confocal microscopy and depth scanning of a microvolume. High-speed 2D unsteady velocity fields are resolved by acquiring images of particle motion using a high-speed CMOS camera and confocal microscope. The confocal microscope spatially filters out of focus light using a rotating disk of pinholes placed in the imaging path, improving the ability of the system to resolve unsteady microPIV measurements by improving the image and correlation signal to noise ratio. For 3D3C measurements, a piezo-actuated objective positioner quickly scans the depth of the microvolume and collects 2D image slices, which are stacked into 3D images. Super resolution microPIV interrogates these 3D images using microPIV as a predictor field for tracking individual particles with microPTV. The 3D3C diagnostic is demonstrated by measuring a pressure driven flow in a three-dimensional expanding microchannel. The experimental velocimetry data acquired at 30 Hz with instantaneous spatial resolution of 4.5 by 4.5 by 4.5 microns agrees well with a computational model of the flow field. The technique allows for isosurface visualization of time resolved 3D3C particle motion and high spatial resolution velocity measurements without requiring a calibration step or reconstruction algorithms. Several applications are investigated, including 3D quantitative fluorescence imaging of isotachophoresis plugs advecting through a microchannel and the dynamics of reaction induced colloidal crystal deposition.
ContributorsKlein, Steven Adam (Author) / Posner, Jonathan D (Thesis advisor) / Adrian, Ronald (Committee member) / Chen, Kangping (Committee member) / Devasenathipathy, Shankar (Committee member) / Frakes, David (Committee member) / Arizona State University (Publisher)
Created2011
Description
A distinct characteristic of ferroelectric materials is the existence of a reversible spontaneous polarization with the application of an electric field. The relevant properties ferroelectric lithium niobate surfaces include a low density of defects and external screening of the bound polarization charge. These properties result in unique surface electric field distribution with a strong electric field in the vicinity of domain boundaries, while away from the boundaries, the field decreases rapidly. In this work, ferroelectric lithium niobate (LN) is used as a template to direct the assembly of metallic nanostructures via photo-induced reduction and a substrate for deposition of ZnO semiconducting thin films via plasma enhanced atomic layer deposition (PE-ALD). To understand the mechanism the photo-induced deposition process the following effects were considered: the illumination photon energy and intensity, the polarization screening mechanism of the lithium niobate template and the chemical concentration. Depending on the UV wavelength, variation of Ag deposition rate and boundary nanowire formation are observed and attributed to the unique surface electric field distribution of the polarity patterned template and the penetration depth of UV light. Oxygen implantation is employed to transition the surface from external screening to internal screening, which results in depressed boundary nanowire formation. The ratio of the photon flux and Ag ion flux to the surface determine the deposition pattern. Domain boundary deposition is enhanced with a high photon/Ag ion flux ratio while domain boundary deposition is depressed with a low photon/Ag ion flux ratio. These results also support the photo-induced deposition model where the process is limited by carrier generation, and the cation reduction occurs at the surface. These findings will provide a foundational understanding to employ ferroelectric templates for assembly and patterning of inorganic, organic, biological, and integrated structures. ZnO films deposited on positive and negative domain surfaces of LN demonstrate different I-V curve behavior at different temperatures. At room temperature, ZnO deposited on positive domains exhibits almost two orders of magnitude greater conductance than on negative domains. The conductance of ZnO on positive domains decreases with increasing temperature while the conductance of ZnO on negative domains increases with increasing temperature. The observations are interpreted in terms of the downward or upward band bending at the ZnO/LN interface which is induced by the ferroelectric polarization charge. Possible application of this effect in non-volatile memory devices is proposed for future work.
ContributorsSun, Yang (Author) / Nemanich, Robert (Thesis advisor) / Bennett, Peter (Committee member) / Sukharev, Maxim (Committee member) / Ros, Robert (Committee member) / McCartney, Martha (Committee member) / Arizona State University (Publisher)
Created2011
Description
When people pick up the phone to call a telephone quitline, they are taking an important step towards changing their smoking behavior. The current study investigated the role of a critical cognition in the cessation process--self-efficacy. Self-efficacy is thought to be influential in behavior change processes including those involved in the challenging process of stopping tobacco use. By applying basic principles of self-efficacy theory to smokers utilizing a telephone quitline, this study advanced our understanding of the nature of self-efficacy in a "real-world" cessation setting. Participants received between one and four intervention calls aimed at supporting them through their quit attempt. Concurrent with the initiation of this study, three items (confidence, stress, and urges) were added to the standard telephone protocol and assessed at each call. Two principal sets of hypotheses were tested using a combination of ANCOVAs and multiple regression analyses. The first set of hypotheses explored how self-efficacy and changes in self-efficacy within individuals were associated with cessation outcomes. Most research has found a positive linear relation between self-efficacy and quit outcomes, but this study tested the possibility that excessively high self-efficacy may actually reflect an overconfidence bias, and in some cases be negatively related to cessation outcomes. The second set of hypotheses addressed several smoking-related factors expected to affect self-efficacy. As predicted, higher baseline self-efficacy and increases in self-efficacy were associated with higher rates of quitting. However, contrary to predictions, there was no evidence that overconfidence led to diminished cessation success. Finally, as predicted, shorter duration of quit attempts, shorter time to relapse, and stronger urges all were associated with lower self-efficacy. In conclusion, understanding how self-efficacy and changes in self-efficacy affect and are affected by cessation outcomes is useful for informing both future research and current quitline intervention procedures.
ContributorsGoesling, Jenna (Author) / Barrera, Manuel (Thesis advisor) / Shiota, Lani (Committee member) / Enders, Craig (Committee member) / Presson, Clark (Committee member) / Arizona State University (Publisher)
Created2011
Description
III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced over the past decade. But the progress of green emission light emitting devices has been limited by the incorporation of indium in the alloy, mainly due to phase separation. This difficulty could be addressed by studying the growth and thermodynamics of these alloys. Knowledge of thermodynamic phase stabilities and of pressure - temperature - composition phase diagrams is important for an understanding of the boundary conditions of a variety of growth techniques. In this dissertation a study of the phase separation of indium gallium nitride is conducted using a regular solution model of the ternary alloy system. Graphs of Gibbs free energy of mixing were produced for a range of temperatures. Binodal and spinodal decomposition curves show the stable and unstable regions of the alloy in equilibrium. The growth of gallium nitride and indium gallium nitride was attempted by the reaction of molten gallium - indium alloy with ammonia at atmospheric pressure. Characterization by X-ray diffraction, photoluminescence, and secondary electron microscopy show that the samples produced by this method contain only gallium nitride in the hexagonal phase. The instability of indium nitride at the temperatures required for activation of ammonia accounts for these results. The photoluminescence spectra show a correlation between the intensity of a broad green emission, related to native defects, and indium composition used in the molten alloy. A different growth method was used to grow two columnar-structured gallium nitride films using ammonium chloride and gallium as reactants and nitrogen and ammonia as carrier gasses. Investigation by X-ray diffraction and spatially-resolved cathodoluminescence shows the film grown at higher temperature to be primarily hexagonal with small quantities of cubic crystallites, while the one grown at lower temperature to be pure hexagonal. This was also confirmed by low temperature photoluminescence measurements. The results presented here show that cubic and hexagonal crystallites can coexist, with the cubic phase having a much sharper and stronger luminescence. Controlled growth of the cubic phase GaN crystallites can be of use for high efficiency light detecting and emitting devices. The ammonolysis of a precursor was used to grow InGaN powders with different indium composition. High purity hexagonal GaN and InN were obtained. XRD spectra showed complete phase separation for samples with x < 30%, with ~ 9% indium incorporation in the 30% sample. The presence of InGaN in this sample was confirmed by PL measurements, where luminescence from both GaN and InGaN band edge are observed. The growth of higher indium compositions samples proved to be difficult, with only the presence of InN in the sample. Nonetheless, by controlling parameters like temperature and time may lead to successful growth of this III-nitride alloy by this method.
ContributorsHill, Arlinda (Author) / Ponce, Fernando A. (Thesis advisor) / Chamberlin, Ralph V (Committee member) / Sankey, Otto F (Committee member) / Smith, David J. (Committee member) / Tsen, Kong-Thon (Committee member) / Arizona State University (Publisher)
Created2011
Description
Intuitive decision making refers to decision making based on situational pattern recognition, which happens without deliberation. It is a fast and effortless process that occurs without complete awareness. Moreover, it is believed that implicit learning is one means by which a foundation for intuitive decision making is developed. Accordingly, the present study investigated several factors that affect implicit learning and the development of intuitive decision making in a simulated real-world environment: (1) simple versus complex situational patterns; (2) the diversity of the patterns to which an individual is exposed; (3) the underlying mechanisms. The results showed that simple patterns led to higher levels of implicit learning and intuitive decision-making accuracy than complex patterns; increased diversity enhanced implicit learning and intuitive decision-making accuracy; and an embodied mechanism, labeling, contributes to the development of intuitive decision making in a simulated real-world environment. The results suggest that simulated real-world environments can provide the basis for training intuitive decision making, that diversity is influential in the process of training intuitive decision making, and that labeling contributes to the development of intuitive decision making. These results are interpreted in the context of applied situations such as military applications involving remotely piloted aircraft.
ContributorsCovas-Smith, Christine Marie (Author) / Cooke, Nancy J. (Thesis advisor) / Patterson, Robert (Committee member) / Glenberg, Arthur (Committee member) / Homa, Donald (Committee member) / Arizona State University (Publisher)
Created2011
Description
This thesis describes several approaches to next generation DNA sequencing via tunneling current method based on a Scanning Tunneling Microscope system. In chapters 5 and 6, preliminary results have shown that DNA bases could be identified by their characteristic tunneling signals. Measurements taken in aqueous buffered solution showed that single base resolution could be achieved with economic setups. In chapter 7, it is illustrated that some ongoing measurements are indicating the sequence readout by making linear scan on a piece of short DNA oligomer. However, to overcome the difficulties of controlling DNA especially ssDNA movement, it is much better to have the tunneling measurement incorporated onto a robust nanopore device to realize sequential reading of the DNA sequence while it is being translocated.
ContributorsHuang, Shuo (Author) / Lindsay, Stuart (Thesis advisor) / Sankey, Otto (Committee member) / Tao, Nongjian (Committee member) / Drucker, Jeff (Committee member) / Ros, Robert (Committee member) / Arizona State University (Publisher)
Created2011
Description
Ge1-ySny alloys represent a new class of photonic materials for integrated optoelectronics on Si. In this work, the electrical and optical properties of Ge1-ySny alloy films grown on Si, with concentrations in the range 0 ≤ y ≤ 0.04, are studied via a variety of methods. The first microelectronic devices from GeSn films were fabricated using newly developed CMOS-compatible protocols, and the devices were characterized with respect to their electrical properties and optical response. The detectors were found to have a detection range that extends into the near-IR, and the detection edge is found to shift to longer wavelengths with increasing Sn content, mainly due to the compositional dependence of the direct band gap E0. With only 2 % Sn, all of the telecommunication bands are covered by a single detector. Room temperature photoluminescence was observed from GeSn films with Sn content up to 4 %. The peak wavelength of the emission was found to shift to lower energies with increasing Sn content, corresponding to the decrease in the direct band gap E0 of the material. An additional peak in the spectrum was assigned to the indirect band gap. The separation between the direct and indirect peaks was found to decrease with increasing Sn concentration, as expected. Electroluminescence was also observed from Ge/Si and Ge0.98Sn0.02 photodiodes under forward bias, and the luminescence spectra were found to match well with the observed photoluminescence spectra. A theoretical expression was developed for the luminescence due to the direct band gap and fit to the data.
ContributorsMathews, Jay (Author) / Menéndez, Jose (Thesis advisor) / Kouvetakis, John (Thesis advisor) / Drucker, Jeffery (Committee member) / Chizmeshya, Andrew (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2011
Description
In this work, a new method, "Nanobonding" [1,2] is conceived and researched to bond Si-based surfaces, via nucleation and growth of a 2 D silicon oxide SiOxHx interphase connecting the surfaces at the nanoscale across macroscopic domains. Nanobonding cross-bridges two smooth surfaces put into mechanical contact in an O2/H2O mixed ambient below T <200 °C via arrays of SiOxHx molecules connecting into a continuous macroscopic bonding interphase. Nano-scale surface planarization via wet chemical processing and new spin technology are compared via Tapping Mode Atomic Force Microscopy (TMAFM) , before and after nano-bonding. Nanobonding uses precursor phases, 2D nano-films of beta-cristobalite (beta-c) SiO2, nucleated on Si(100) via the Herbots-Atluri (H-A) method [1]. beta-c SiO2 on Si(100) is ordered and flat with atomic terraces over 20 nm wide, well above 2 nm found in native oxides. When contacted with SiO2 this ultra-smooth nanophase can nucleate and grow domains with cross-bridging molecular strands of hydroxylated SiOx, instead of point contacts. The high density of molecular bonds across extended terraces forms a strong bond between Si-based substrates, nano- bonding [2] the Si and silica. A new model of beta-cristobalite SiO2 with its <110> axis aligned along Si[100] direction is simulated via ab-initio methods in a nano-bonded stack with beta-c SiO2 in contact with amorphous SiO2 (a-SiO2), modelling cross-bridging molecular bonds between beta-c SiO2 on Si(100) and a-SiO2 as during nanobonding. Computed total energies are compared with those found for Si(100) and a-SiO2 and show that the presence of two lattice cells of !-c SiO2 on Si(100) and a-SiO2 lowers energy when compared to Si(100)/ a-SiO2 Shadow cone calculations on three models of beta-c SiO2 on Si(100) are compared with Ion Beam Analysis of H-A processed Si(100). Total surface energy measurements via 3 liquid contact angle analysis of Si(100) after H-A method processing are also compared. By combining nanobonding experiments, TMAFM results, surface energy data, and ab-initio calculations, an atomistic model is derived and nanobonding is optimized. [1] US Patent 6,613,677 (9/2/03), 7,851,365 (12/14/10), [2] Patent Filed: 4/30/09, 10/1/2011
ContributorsWhaley, Shawn D (Author) / Culbertson, Robert J. (Thesis advisor) / Herbots, Nicole (Committee member) / Rez, Peter (Committee member) / Marzke, Robert F (Committee member) / Lindsay, Stuart (Committee member) / Chamberlin, Ralph V (Committee member) / Arizona State University (Publisher)
Created2011