Matching Items (20)
Filtering by
- Creators: Arizona State University
Description
In recent years, there has been increased interest in the Indium Gallium Nitride (InGaN) material system for photovoltaic (PV) applications. The InGaN alloy system has demonstrated high performance for high frequency power devices, as well as for optical light emitters. This material system is also promising for photovoltaic applications due to broad range of bandgaps of InxGa1-xN alloys from 0.65 eV (InN) to 3.42 eV (GaN), which covers most of the electromagnetic spectrum from ultraviolet to infrared wavelengths. InGaN’s high absorption coefficient, radiation resistance and thermal stability (operating with temperature > 450 ℃) makes it a suitable PV candidate for hybrid concentrating solar thermal systems as well as other high temperature applications. This work proposed a high efficiency InGaN-based 2J tandem cell for high temperature (450 ℃) and concentration (200 X) hybrid concentrated solar thermal (CSP) application via numerical simulation. In order to address the polarization and band-offset issues for GaN/InGaN hetero-solar cells, band-engineering techniques are adopted and a simple interlayer is proposed at the hetero-interface rather than an Indium composition grading layer which is not practical in fabrication. The base absorber thickness and doping has been optimized for 1J cell performance and current matching has been achieved for 2J tandem cell design. The simulations also suggest that the issue of crystalline quality (i.e. short SRH lifetime) of the nitride material system to date is a crucial factor limiting the performance of the designed 2J cell at high temperature. Three pathways to achieve ~25% efficiency have been proposed under 450 ℃ and 200 X. An anti-reflection coating (ARC) for the InGaN solar cell optical management has been designed. Finally, effective mobility model for quantum well solar cells has been developed for efficient quasi-bulk simulation.
ContributorsFang, Yi, Ph.D (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Thesis advisor) / Ponce, Fernando (Committee member) / Nemanich, Robert (Committee member) / Arizona State University (Publisher)
Created2017
Description
In this dissertation, various characterization techniques have been used to investigate many aspects of the properties of III-nitride materials and devices for optoelectronic applications.
The first part of this work is focused on the evolution of microstructures of BAlN thin films. The films were grown by flow-modulated epitaxy at 1010 oC, with B/(B+Al) gas-flow ratios ranging from 0.06 to 0.18. The boron content obtained from X-ray diffraction (XRD) patterns ranges from x = 0.02 to 0.09, while Rutherford backscattering spectrometry (RBS) measures x = 0.06 to 0.16. Transmission electron microscopy indicates the sole presence of the wurtzite crystal structure in the BAlN films, and a tendency towards twin formation and finer microstructure for B/(B+Al) gas-flow ratios greater than 0.15. The RBS data suggest that the incorporation of B is highly efficient, while the XRD data indicate that the epitaxial growth may be limited by a solubility limit in the crystal phase at about 9%. Electron energy loss spectroscopy has been used to profile spatial variations in the composition of the films. It has also located point defects in the films with nanometer resolution. The defects are identified as B and Al interstitials and N vacancies by comparison of the observed energy thresholds with results of density functional theory calculations.
The second part of this work investigates dislocation clusters observed in thick InxGa1-xN films with 0.07 ≤ x ≤ 0.12. The clusters resemble baskets with a higher indium content at their interior. Threading dislocations at the basket boundaries are of the misfit edge type, and their separation is consistent with misfit strain relaxation due the difference in indium content between the baskets and the surrounding matrix. The base of the baskets exhibits no observable misfit dislocations connected to the threading dislocations, and often no net displacements like those due to stacking faults. It is argued that the origin of these threading dislocation arrays is associated with misfit dislocations at the basal plane that dissociate, forming stacking faults. When the stacking faults form simultaneously satisfying the crystal symmetry, the sum of their translation vectors does add up to zero, consistent with our experimental observations.
The first part of this work is focused on the evolution of microstructures of BAlN thin films. The films were grown by flow-modulated epitaxy at 1010 oC, with B/(B+Al) gas-flow ratios ranging from 0.06 to 0.18. The boron content obtained from X-ray diffraction (XRD) patterns ranges from x = 0.02 to 0.09, while Rutherford backscattering spectrometry (RBS) measures x = 0.06 to 0.16. Transmission electron microscopy indicates the sole presence of the wurtzite crystal structure in the BAlN films, and a tendency towards twin formation and finer microstructure for B/(B+Al) gas-flow ratios greater than 0.15. The RBS data suggest that the incorporation of B is highly efficient, while the XRD data indicate that the epitaxial growth may be limited by a solubility limit in the crystal phase at about 9%. Electron energy loss spectroscopy has been used to profile spatial variations in the composition of the films. It has also located point defects in the films with nanometer resolution. The defects are identified as B and Al interstitials and N vacancies by comparison of the observed energy thresholds with results of density functional theory calculations.
The second part of this work investigates dislocation clusters observed in thick InxGa1-xN films with 0.07 ≤ x ≤ 0.12. The clusters resemble baskets with a higher indium content at their interior. Threading dislocations at the basket boundaries are of the misfit edge type, and their separation is consistent with misfit strain relaxation due the difference in indium content between the baskets and the surrounding matrix. The base of the baskets exhibits no observable misfit dislocations connected to the threading dislocations, and often no net displacements like those due to stacking faults. It is argued that the origin of these threading dislocation arrays is associated with misfit dislocations at the basal plane that dissociate, forming stacking faults. When the stacking faults form simultaneously satisfying the crystal symmetry, the sum of their translation vectors does add up to zero, consistent with our experimental observations.
ContributorsWang, Shuo, Ph.D (Author) / Ponce, Fernando A. (Thesis advisor) / Menéndez, Jose (Committee member) / Rez, Peter (Committee member) / McCartney, Martha (Committee member) / Arizona State University (Publisher)
Created2018
Description
The inductance of a conductor expresses its tendency to oppose a change in current flowing through it. For superconductors, in addition to the familiar magnetic inductance due to energy stored in the magnetic field generated by this current, kinetic inductance due to inertia of charge carriers is a significant and often dominant contribution to total inductance. Devices based on modifying the kinetic inductance of thin film superconductors have widespread application to millimeter-wave astronomy. Lithographically patterning such a film into a high quality factor resonator produces a high sensitivity photodetector known as a kinetic inductance detector (KID), which is sensitive to frequencies above the superconducting energy gap of the chosen material. Inherently multiplexable in the frequency domain and relatively simple to fabricate, KIDs pave the way to the large format focal plane array instruments necessary to conduct the next generation of cosmic microwave background (CMB), star formation, and galaxy evolution studies. In addition, non-linear kinetic inductance can be exploited to develop traveling wave kinetic inductance parametric amplifiers (TKIPs) based on superconducting delay lines to read out these instruments.
I present my contributions to both large and small scale collaborative efforts to develop KID arrays, spectrometers integrated with KIDs, and TKIPs. I optimize a dual polarization TiN KID absorber for the next generation Balloon-borne Large Aperture Submillimeter Telescope for Polarimetry, which is designed to investigate the role magnetic fields play in star formation. As part of an effort to demonstrate aluminum KIDs on sky for CMB polarimetry, I fabricate devices for three design variants. SuperSpec and WSpec are respectively the on-chip and waveguide implementations of a filter bank spectrometer concept designed for survey spectroscopy of high redshift galaxies. I provide a robust tool for characterizing the performance of all SuperSpec devices and demonstrate basic functionality of the first WSpec prototype. As part of an effort to develop the first W-Band (75-110 GHz) TKIP, I construct a cryogenic waveguide feedthrough, which enhances the Astronomical Instrumentation Laboratory’s capability to test W-Band devices in general. These efforts contribute to the continued maturation of these kinetic inductance technologies, which will usher in a new era of millimeter-wave astronomy.
I present my contributions to both large and small scale collaborative efforts to develop KID arrays, spectrometers integrated with KIDs, and TKIPs. I optimize a dual polarization TiN KID absorber for the next generation Balloon-borne Large Aperture Submillimeter Telescope for Polarimetry, which is designed to investigate the role magnetic fields play in star formation. As part of an effort to demonstrate aluminum KIDs on sky for CMB polarimetry, I fabricate devices for three design variants. SuperSpec and WSpec are respectively the on-chip and waveguide implementations of a filter bank spectrometer concept designed for survey spectroscopy of high redshift galaxies. I provide a robust tool for characterizing the performance of all SuperSpec devices and demonstrate basic functionality of the first WSpec prototype. As part of an effort to develop the first W-Band (75-110 GHz) TKIP, I construct a cryogenic waveguide feedthrough, which enhances the Astronomical Instrumentation Laboratory’s capability to test W-Band devices in general. These efforts contribute to the continued maturation of these kinetic inductance technologies, which will usher in a new era of millimeter-wave astronomy.
ContributorsChe, George (Author) / Mauskopf, Philip D (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Groppi, Christopher (Committee member) / Semken, Steven (Committee member) / Trichopoulos, Georgios (Committee member) / Arizona State University (Publisher)
Created2018
Description
Mathematical models are important tools for addressing problems that exceed experimental capabilities. In this work, I present ordinary and partial differential equation (ODE, PDE) models for two problems: Vicodin abuse and impact cratering.
The prescription opioid Vicodin is the nation's most widely prescribed pain reliever. The majority of Vicodin abusers are first introduced via prescription, distinguishing it from other drugs in which the most common path to abuse begins with experimentation. I develop and analyze two mathematical models of Vicodin use and abuse, considering only those patients with an initial Vicodin prescription. Through adjoint sensitivity analysis, I show that focusing efforts on prevention rather than treatment has greater success at reducing the total population of abusers. I prove that solutions to each model exist, are unique, and are non-negative. I also derive conditions for which these solutions are asymptotically stable.
Verification and Validation (V&V) are necessary processes to ensure accuracy of computational methods. Simulations are essential for addressing impact cratering problems, because these problems often exceed experimental capabilities. I show that the Free Lagrange (FLAG) hydrocode, developed and maintained by Los Alamos National Laboratory, can be used for impact cratering simulations by verifying FLAG against two analytical models of aluminum-on-aluminum impacts at different impact velocities and validating FLAG against a glass-into-water laboratory impact experiment. My verification results show good agreement with the theoretical maximum pressures, and my mesh resolution study shows that FLAG converges at resolutions low enough to reduce the required computation time from about 28 hours to about 25 minutes.
Asteroid 16 Psyche is the largest M-type (metallic) asteroid in the Main Asteroid Belt. Radar albedo data indicate Psyche's surface is rich in metallic content, but estimates for Psyche's composition vary widely. Psyche has two large impact structures in its Southern hemisphere, with estimated diameters from 50 km to 70 km and estimated depths up to 6.4 km. I use the FLAG hydrocode to model the formation of the largest of these impact structures. My results indicate an oblique angle of impact rather than a vertical impact. These results also support previous claims that Psyche is metallic and porous.
The prescription opioid Vicodin is the nation's most widely prescribed pain reliever. The majority of Vicodin abusers are first introduced via prescription, distinguishing it from other drugs in which the most common path to abuse begins with experimentation. I develop and analyze two mathematical models of Vicodin use and abuse, considering only those patients with an initial Vicodin prescription. Through adjoint sensitivity analysis, I show that focusing efforts on prevention rather than treatment has greater success at reducing the total population of abusers. I prove that solutions to each model exist, are unique, and are non-negative. I also derive conditions for which these solutions are asymptotically stable.
Verification and Validation (V&V) are necessary processes to ensure accuracy of computational methods. Simulations are essential for addressing impact cratering problems, because these problems often exceed experimental capabilities. I show that the Free Lagrange (FLAG) hydrocode, developed and maintained by Los Alamos National Laboratory, can be used for impact cratering simulations by verifying FLAG against two analytical models of aluminum-on-aluminum impacts at different impact velocities and validating FLAG against a glass-into-water laboratory impact experiment. My verification results show good agreement with the theoretical maximum pressures, and my mesh resolution study shows that FLAG converges at resolutions low enough to reduce the required computation time from about 28 hours to about 25 minutes.
Asteroid 16 Psyche is the largest M-type (metallic) asteroid in the Main Asteroid Belt. Radar albedo data indicate Psyche's surface is rich in metallic content, but estimates for Psyche's composition vary widely. Psyche has two large impact structures in its Southern hemisphere, with estimated diameters from 50 km to 70 km and estimated depths up to 6.4 km. I use the FLAG hydrocode to model the formation of the largest of these impact structures. My results indicate an oblique angle of impact rather than a vertical impact. These results also support previous claims that Psyche is metallic and porous.
ContributorsCaldwell, Wendy K (Author) / Wirkus, Stephen (Thesis advisor) / Asphaug, Erik (Committee member) / Camacho, Erika T (Committee member) / Crook, Sharon (Committee member) / Plesko, Catherine S (Committee member) / Smith, Hal (Committee member) / Arizona State University (Publisher)
Created2019
Description
The challenge of radiation therapy is to maximize the dose to the tumor while simultaneously minimizing the dose elsewhere. Proton therapy is well suited to this challenge due to the way protons slow down in matter. As the proton slows down, the rate of energy loss per unit path length continuously increases leading to a sharp dose near the end of range. Unlike conventional radiation therapy, protons stop inside the patient, sparing tissue beyond the tumor. Proton therapy should be superior to existing modalities, however, because protons stop inside the patient, there is uncertainty in the range. “Range uncertainty” causes doctors to take a conservative approach in treatment planning, counteracting the advantages offered by proton therapy. Range uncertainty prevents proton therapy from reaching its full potential.
A new method of delivering protons, pencil-beam scanning (PBS), has become the new standard for treatment over the past few years. PBS utilizes magnets to raster scan a thin proton beam across the tumor at discrete locations and using many discrete pulses of typically 10 ms duration each. The depth is controlled by changing the beam energy. The discretization in time of the proton delivery allows for new methods of dose verification, however few devices have been developed which can meet the bandwidth demands of PBS.
In this work, two devices have been developed to perform dose verification and monitoring with an emphasis placed on fast response times. Measurements were performed at the Mayo Clinic. One detector addresses range uncertainty by measuring prompt gamma-rays emitted during treatment. The range detector presented in this work is able to measure the proton range in-vivo to within 1.1 mm at depths up to 11 cm in less than 500 ms and up to 7.5 cm in less than 200 ms. A beam fluence detector presented in this work is able to measure the position and shape of each beam spot. It is hoped that this work may lead to a further maturation of detection techniques in proton therapy, helping the treatment to reach its full potential to improve the outcomes in patients.
A new method of delivering protons, pencil-beam scanning (PBS), has become the new standard for treatment over the past few years. PBS utilizes magnets to raster scan a thin proton beam across the tumor at discrete locations and using many discrete pulses of typically 10 ms duration each. The depth is controlled by changing the beam energy. The discretization in time of the proton delivery allows for new methods of dose verification, however few devices have been developed which can meet the bandwidth demands of PBS.
In this work, two devices have been developed to perform dose verification and monitoring with an emphasis placed on fast response times. Measurements were performed at the Mayo Clinic. One detector addresses range uncertainty by measuring prompt gamma-rays emitted during treatment. The range detector presented in this work is able to measure the proton range in-vivo to within 1.1 mm at depths up to 11 cm in less than 500 ms and up to 7.5 cm in less than 200 ms. A beam fluence detector presented in this work is able to measure the position and shape of each beam spot. It is hoped that this work may lead to a further maturation of detection techniques in proton therapy, helping the treatment to reach its full potential to improve the outcomes in patients.
ContributorsHolmes, Jason M (Author) / Alarcon, Ricardo (Thesis advisor) / Bues, Martin (Committee member) / Galyaev, Eugene (Committee member) / Chamberlin, Ralph (Committee member) / Arizona State University (Publisher)
Created2019
Description
ABSTRACTWith the National Aeronautics and Space Administration (NASA) Psyche Mission, humans will soon have the first opportunity to explore a new kind of planetary body: one composed mostly of metal as opposed to stony minerals or ices. Identifying the composition of asteroids from Earth-based observations has been an ongoing challenge. Although optical reflectance spectra, radar, and orbital dynamics can constrain an asteroid’s mineralogy and bulk density, in many cases there is not a clear or precise match with analogous materials such as meteorites. Additionally, the surfaces of asteroids and other small, airless planetary bodies can be heavily modified over geologic time by exposure to the space environment. To accurately interpret remote sensing observations of metal-rich asteroids, it is therefore necessary to understand how the processes active on asteroid surfaces affect metallic materials. This dissertation represents a first step toward that understanding. In collaboration with many colleagues, I have performed laboratory experiments on iron meteorites to simulate solar wind ion irradiation, surface heating, micrometeoroid bombardment, and high-velocity impacts. Characterizing the meteorite surface’s physical and chemical properties before and after each experiment can constrain the effects of each process on a metal-rich surface in space. While additional work will be needed for a complete understanding, it is nevertheless possible to make some early predictions of what (16) Psyche’s surface regolith might look like when humans observe it up close. Moreover, the results of these experiments will inform future exploration beyond asteroid Psyche as humans attempt to understand how Earth’s celestial neighborhood came to be.
ContributorsChristoph, John Morgan M. (Author) / Elkins-Tanton, Linda (Thesis advisor) / Williams, David (Committee member) / Dukes, Catherine (Committee member) / Sharp, Thomas (Committee member) / Bell III, James (Committee member) / Arizona State University (Publisher)
Created2023
Description
Gallium Nitride (GaN) is uniquely suited for Radio Frequency (RF) and power electronic applications due to its intrinsically high saturation velocity and high mobility compared to Silicon and Silicon Carbide (SiC). High Electron Mobility Transistors (HEMTs) have remained the primary topology for GaN transistors in RF applications. However, GaN HEMTs suffer from a variety of issues such as current crowding, lack of enhancement mode (E-Mode) operation and non-linearity. These drawbacks slow the widespread adoption of GaN devices for ultra-low voltage (ULV) applications such as voltage regulators, automotive and computing applications. E-mode operation is especially desired in low-voltage high frequency switching applications. In this context, Fin Field Effect Transistors (FinFETs) offer an alternative topology for ULV applications as opposed to conventional HEMTs. Recent advances in material processing, high aspect ratio epitaxial growth and etching methods has led to an increased interest in 3D nanostructures such as Nano-FinFETs and Nanowire FETs. A typical 3D nano-FinFET is the AlGaN/GaN Metal Insulator Semiconductor (MIS) FET wherein a layer of Al2O3 surrounds the AlGaN/GaN fin. The presence of the side gates leads to additional lateral confinement of the 2D Electron Gas (2DEG). Theoretical calculations of transport properties in confined systems such as AlGaN/GaN Finfets are scarce compared to those of their planar HEMT counterparts.
A novel simulator is presented in this dissertation, which employs self-consistent solution of the coupled 1D Boltzmann – 2D Schrödinger – 3D Poisson problem, to yield the channel electrostatics and the low electric field transport characteristics of AlGaN/GaN MIS FinFETs. The low field electron mobility is determined by solving the Boltzmann transport equation in the Quasi-1D region using 1D Ensemble Monte Carlo method. Three electron-phonon scattering mechanisms (acoustic, piezoelectric and polar optical phonon scattering) and interface roughness scattering at the AlGaN/GaN interface are considered in this theoretical model. Simulated low-field electron mobility and its temperature dependence are in agreement with experimental data reported in the literature.
A quasi-1D version of alloy clustering model is derived and implemented and the limiting effect of alloy clustering on the low-field electron mobility is investigated for the first time for MIS FinFET device structures.
ContributorsKumar, Viswanathan Naveen (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Nemanich, Robert (Committee member) / Povolotskyi, Michael (Committee member) / Esqueda, Ivan Sanchez (Committee member) / Arizona State University (Publisher)
Created2022
Description
The work covered in this dissertation addresses two areas revolving around superconducting nanowire detector development. The first is regarding array architectureused for a large-scale system. The second involves operating under conditions that
allow for a linear response in a superconducting nanowire detector. This dissertation
provides the relevant theory, design, and measurements to characterize these detectors. The array architecture studied here utilizes a superconducting nanowire single
photon detector embedded in an LC resonant structure, allowing multiple pixels to
couple to a single transmission line and identify each one by a tuned characteristic frequency. The pixels in the array are DC-biased, allowing them to respond to absorbed
single photons and avoiding any dead time associated with RF biasing. Measured
results from a 16-pixel array based on chip components are analyzed. The development here directs this architecture towards integrating a proven 16-pixel design onto
a single substrate with the capacity to scale to a higher pixel count and integrate
into a broad range of applications. This text outlines the theory behind the proposed
linear operation regime and details the considerations needed to achieve a response.
The basic principle relies on the time-dependent change in kinetic inductance due to
an absorbed photon. Under the conditions discussed in the text, this would allow
for fast photon number resolution. However, without reaching those conditions, the
detector may still operate under a higher incident photon flux. Two device designs
are formulated and simulated, weighing the benefits and drawbacks of each approach.
One of the device designs uses an impedance-matching taper to minimize reflections
between the nanowire and 50 Ohm amplifier. The other design utilizes N parallel
nanowires spanning the length of a gap along a 50 Ohm transmission line path. The
tapered device is realized to a proof-of-principle stage and measured under conditions
that set a limit on the device’s linear response to optical power. The performance of this detector points to areas of improvement that are addressed or circumvented
in the parallel bridge design. Potential for future development is discussed for the
frequency multiplexed superconducting nanowire single photon detector array and
the linear mode detector.
ContributorsGlasby, Jacob (Author) / Mauskopf, Philip (Thesis advisor) / Chamberlin, Ralph (Committee member) / Schmidt, Kevin (Committee member) / Trichopoulos, Georgios (Committee member) / Arizona State University (Publisher)
Created2023
Description
Interdigitated back contact (IBC) solar cells have achieved the highest single junction silicon wafer-based solar cell power conversion efficiencies reported to date. This thesis is about the fabrication of a high-efficiency silicon heterojunction IBC solar cell for potential use as the bottom cell for a 3-terminal lattice-matched dilute-nitride Ga (In)NP(As)/Si monolithic tandem solar cell. An effective fabrication process has been developed and the process challenges related to open circuit voltage (Voc), series resistance (Rs), and fill factor (FF) are experimentally analyzed. While wet etching, the sample lost the initial passivation, and by changing the etchant solution and passivation process, the voltage at maximum power recovered to an initial value of over 710 mV before metallization. The factors reducing the series resistance loss in IBC cells were also studied. One of these factors was the Indium Tin Oxide (ITO) sputtering parameters, which impact the conductivity of the ITO layer and transport across the a-Si:H/ITO interface. For the standard recipe, the chamber pressure was 3.5 mTorr with no oxygen partial pressure, and the thickness of the ITO layer in contact with the a-Si:H layers, was optimized to 150 nm. The patterning method for the metal contacts and final annealing also change the contact resistance of the base and emitter stack layers. The final annealing step is necessary to recover the sputtering damage; however, the higher the annealing time the higher the final IBC series resistance. The best efficiency achieved was 19.3% (Jsc = 37 mA/cm2, Voc = 691 mV, FF = 71.7%) on 200 µm thick 1-15 Ω-cm n-type CZ C-Si with a designated area of 4 cm2.
ContributorsMoeini Rizi, Mansoure (Author) / Goodnick, Stephen (Thesis advisor) / Honsberg, Christina (Committee member) / Goryll, Michael (Committee member) / Smith, David (Committee member) / Bowden, Stuart (Committee member) / Arizona State University (Publisher)
Created2022
Description
The availability of bulk gallium nitride (GaN) substrates has generated great interest in the development of vertical GaN-on-GaN power devices. The vertical devices made of GaN have not been able to reach their true potential due to material growth related issues. Power devices typically have patterned p-n, and p-i junctions in lateral, and vertical direction relative to the substrate. Identifying the variations from the intended layer design is crucial for failure analysis of the devices. A most commonly used dopant profiling technique, secondary ion mass spectroscopy (SIMS), does not have the spatial resolution to identify the dopant distribution in patterned devices. The possibility of quantitative dopant profiling at a sub-micron scale for GaN in a scanning electron microscope (SEM) is discussed. The total electron yield in an SEM is shown to be a function of dopant concentration which can potentially be used for quantitative dopant profiling.
Etch-and-regrowth is a commonly employed strategy to generate the desired patterned p-n and p-i junctions. The devices involving etch-and-regrowth have poor performance characteristics like high leakage currents, and lower breakdown voltages. This is due to damage induced by the dry etching process, and the nature of the regrowth interface, which is important to understand in order to address the key issue of leakage currents in etched and regrown devices. Electron holography is used for electrostatic potential profiling across the regrowth interfaces to identify the charges introduced by the etching process. SIMS is used to identify the impurities introduced at the interfaces due to etch-and-regrowth process.
Etch-and-regrowth is a commonly employed strategy to generate the desired patterned p-n and p-i junctions. The devices involving etch-and-regrowth have poor performance characteristics like high leakage currents, and lower breakdown voltages. This is due to damage induced by the dry etching process, and the nature of the regrowth interface, which is important to understand in order to address the key issue of leakage currents in etched and regrown devices. Electron holography is used for electrostatic potential profiling across the regrowth interfaces to identify the charges introduced by the etching process. SIMS is used to identify the impurities introduced at the interfaces due to etch-and-regrowth process.
ContributorsAlugubelli, Shanthan Reddy (Author) / Ponce, Fernando A. (Thesis advisor) / McCartney, Martha (Committee member) / Newman, Nathan (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2019