Matching Items (73)
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Description

The objective of the Indianapolis Flux Experiment (INFLUX) is to develop, evaluate and improve methods for measuring greenhouse gas (GHG) emissions from cities. INFLUX’s scientific objectives are to quantify CO2 and CH4 emission rates at 1 km2 resolution with a 10% or better accuracy and precision, to determine whole-city emissions

The objective of the Indianapolis Flux Experiment (INFLUX) is to develop, evaluate and improve methods for measuring greenhouse gas (GHG) emissions from cities. INFLUX’s scientific objectives are to quantify CO2 and CH4 emission rates at 1 km2 resolution with a 10% or better accuracy and precision, to determine whole-city emissions with similar skill, and to achieve high (weekly or finer) temporal resolution at both spatial resolutions. The experiment employs atmospheric GHG measurements from both towers and aircraft, atmospheric transport observations and models, and activity-based inventory products to quantify urban GHG emissions. Multiple, independent methods for estimating urban emissions are a central facet of our experimental design. INFLUX was initiated in 2010 and measurements and analyses are ongoing. To date we have quantified urban atmospheric GHG enhancements using aircraft and towers with measurements collected over multiple years, and have estimated whole-city CO2 and CH4 emissions using aircraft and tower GHG measurements, and inventory methods. Significant differences exist across methods; these differences have not yet been resolved; research to reduce uncertainties and reconcile these differences is underway. Sectorally- and spatially-resolved flux estimates, and detection of changes of fluxes over time, are also active research topics. Major challenges include developing methods for distinguishing anthropogenic from biogenic CO2 fluxes, improving our ability to interpret atmospheric GHG measurements close to urban GHG sources and across a broader range of atmospheric stability conditions, and quantifying uncertainties in inventory data products. INFLUX data and tools are intended to serve as an open resource and test bed for future investigations. Well-documented, public archival of data and methods is under development in support of this objective.

ContributorsDavis, Kenneth J. (Author) / Deng, Aijun (Author) / Lauvaux, Thomas (Author) / Miles, Natasha L. (Author) / Richardson, Scott J. (Author) / Sarmiento, Daniel P. (Author) / Gurney, Kevin (Author) / Hardesty, R. Michael (Author) / Bonin, Timothy A. (Author) / Brewer, W. Alan (Author) / Lamb, Brian K. (Author) / Shepson, Paul B. (Author) / Harvey, Rebecca M. (Author) / Cambaliza, Maria O. (Author) / Sweeney, Colm (Author) / Turnbull, Jocelyn C. (Author) / Whetstone, James (Author) / Karion, Anna (Author) / College of Liberal Arts and Sciences (Contributor)
Created2017-05-23
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Description
Hyperspectral imaging is a novel technology which allows for the collection of reflectance spectra of a sample in-situ and at a distance. A rapidly developing technology, hyperspectral imaging has been of particular interest in the field of art characterization, authentication, and conservation as it avoids the pitfalls of traditional characterization

Hyperspectral imaging is a novel technology which allows for the collection of reflectance spectra of a sample in-situ and at a distance. A rapidly developing technology, hyperspectral imaging has been of particular interest in the field of art characterization, authentication, and conservation as it avoids the pitfalls of traditional characterization techniques and allows for the rapid and wide collection of data never before possible. It is hypothesized that by combining the power of hyperspectral imaging with machine learning, a new framework for the in-situ and automated characterization and authentication of artworks can be developed. This project, using the CMYK set of inks, began the preliminary development of such a framework. It was found that hyperspectral imaging and machine learning as a combination show significant potential as an avenue for art authentication, though further progress and research is needed to match the reliability of status quo techniques.
ContributorsChowdhury, Tanzil Aziz (Author) / Newman, Nathan (Thesis director) / Tongay, Sefaattin (Committee member) / School of Politics and Global Studies (Contributor) / Materials Science and Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2020-05
Description
Transition metal dichalcogenides (TMDs) are a family of layered crystals with the chemical formula MX2 (M = W, Nb, Mo, Ta and X = S, Se, Te). These TMDs exhibit many fascinating optical and electronic properties making them strong candidates for high-end electronics, optoelectronic application, and spintronics. The layered structure

Transition metal dichalcogenides (TMDs) are a family of layered crystals with the chemical formula MX2 (M = W, Nb, Mo, Ta and X = S, Se, Te). These TMDs exhibit many fascinating optical and electronic properties making them strong candidates for high-end electronics, optoelectronic application, and spintronics. The layered structure of TMDs allows the crystal to be mechanically exfoliated to a monolayer limit, where bulk-scale properties no longer apply and quantum effects arise, including an indirect-to-direct bandgap transition. Controllably tuning the electronic properties of TMDs like WSe2 is therefore a highly attractive prospect achieved by substitutionally doping the metal atoms to enable n- and p-type doping at various concentrations, which can ultimately lead to more effective electronic devices due to increased charge carriers, faster transmission times and possibly new electronic and optical properties to be probed. WSe2 is expected to exhibit the largest spin splitting size and spin-orbit coupling, which leads to exciting potential applications in spintronics over its similar TMD counterparts, which can be controlled through electrical doping. Unfortunately, the well-established doping technique of ion implantation is unable to preserve the crystal quality leading to a major roadblock for the electronics applications of tungsten diselenide. Synthesizing WSe2 via chemical vapor transport (CVT) and flux method have been previously established, but controllable p-type (niobium) doping WSe2 in low concentrations ranges (<1 at %) by CVT methods requires further experimentation and study. This work studies the chemical vapor transport synthesis of doped-TMD W1-xNbxSe2 through characterization techniques of X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, and X-ray Photoelectron Spectroscopy techniques. In this work, it is observed that excess selenium transport does not enhance the controllability of niobium doping in WSe2, and that tellurium tetrachloride (TeCl4) transport has several barriers in successfully incorporating niobium into WSe2.
ContributorsRuddick, Hayley (Author) / Tongay, Sefaattin (Thesis director) / Jiao, Yang (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor)
Created2024-05