Matching Items (99)
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Description
Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning

Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning the entire energy spectrum from far-IR (~0 eV) up to UV (~3.4 eV). The broad range of bandgaps and material properties make it very attractive for a wide range of applications in optoelectronics, such as solar cells, laser diodes, light emitting diodes, and photodetectors. Moreover, this novel materials system potentially offers unlimited degrees of freedom for integration of electronic and optoelectronic devices onto a single substrate while keeping the best possible materials quality with very low densities of misfit dislocations. This capability is not achievable with any other known lattice-matched semiconductors on any available substrate. In the 6.1-A materials system, the semiconductors ZnTe and GaSb are almost perfectly lattice-matched with a lattice mismatch of only 0.13%. Correspondingly, it is expected that high quality ZnTe/GaSb and GaSb/ZnTe heterostructures can be achieved with very few dislocations generated during growth. To fulfill the task, their MBE growth and material properties are carefully investigated. High quality ZnTe layers grown on various III-V substrates and GaSb grown on ZnTe are successfully achieved using MBE. It is also noticed that ZnTe and GaSb have a type-I band-edge alignment with large band offsets (delta_Ec=0.934 eV, delta_Ev=0.6 eV), which provides strong confinement for both electrons and holes. Furthermore, a large difference in refractive index is found between ZnTe and GaSb (2.7 and 3.9, respectively, at 0.7 eV), leading to excellent optical confinement of the guided optical modes in planar semiconductor lasers or distributed Bragg reflectors (DBR) for vertical-cavity surface-emitting lasers. Therefore, GaSb/ZnTe double-heterostructure and ZnTe/GaSb DBR structure are suitable for use in light emitting devices. In this thesis work, experimental demonstration of these structures with excellent structural and optical properties is reported. During the exploration on the properties of various ZnTe heterostructures, it is found that residual tensile strains exist in the thick ZnTe epilayers when they are grown on GaAs, InP, InAs and GaSb substrates. The presence of tensile strains is due to the difference in thermal expansion coefficients between the epilayers and the substrates. The defect densities in these ZnTe layers become lower as the ZnTe layer thickness increases. Growth of high quality GaSb on ZnTe can be achieved using a temperature ramp during growth. The influence of temperature ramps with different ramping rates in the optical properties of GaSb layer is studied, and the samples grown with a temperature ramp from 360 to 470 C at a rate of 33 C/min show the narrowest bound exciton emission peak with a full width at half maximum of 15 meV. ZnTe/GaSb DBR structures show excellent reflectivity properties in the mid-infrared range. A peak reflectance of 99% with a wide stopband of 480 nm centered at 2.5 um is measured from a ZnTe/GaSb DBR sample of only 7 quarter-wavelength pairs.
ContributorsFan, Jin (Author) / Zhang, Yong-Hang (Thesis advisor) / Smith, David (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2012
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Description
As world energy demands increase, research into more efficient energy production methods has become imperative. Heterogeneous catalysis and nanoscience are used to promote chemical transformations important for energy production. These concepts are important in solid oxide fuel cells (SOFCs) which have attracted attention because of their potential to provide an

As world energy demands increase, research into more efficient energy production methods has become imperative. Heterogeneous catalysis and nanoscience are used to promote chemical transformations important for energy production. These concepts are important in solid oxide fuel cells (SOFCs) which have attracted attention because of their potential to provide an efficient and environmentally favorable power generation system. The SOFC is also fuel-flexible with the ability to run directly on many fuels other than hydrogen. Internal fuel reforming directly in the anode of the SOFC would greatly reduce the cost and complexity of the device. Methane is the simplest hydrocarbon and a main component in natural gas, making it useful when testing catalysts on the laboratory scale. Nickel (Ni) and gadolinium (Gd) doped ceria (CeO2) catalysts for potential use in the SOFC anode were synthesized with a spray drying method and tested for catalytic performance using partial oxidation of methane and steam reforming. The relationships between catalytic performance and structure were then investigated using X-ray diffraction, transmission electron microscopy, and environmental transmission electron microscopy. The possibility of solid solutions, segregated phases, and surface layers of Ni were explored. Results for a 10 at.% Ni in CeO2 catalyst reveal a poor catalytic behavior while a 20 at.% Ni in CeO2 catalyst is shown to have superior activity. The inclusion of both 10 at.% Gd and 10 at.% Ni in CeO2 enhances the catalytic performance. Analysis of the presence of Ni in all 3 samples reveals Ni heterogeneity and little evidence for extensive solid solution doping. Ni is found in small domains throughout CeO2 particles. In the 20 at.% Ni sample a segregated, catalytically active NiO phase is observed. Overall, it is found that significant interaction between Ni and CeO2 occurs that could affect the synthesis and functionality of the SOFC anode.
ContributorsCavendish, Rio (Author) / Crozier, Peter (Thesis advisor) / Adams, James (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2012
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Description
In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate

In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO2-La2O3/ZnO/SiO2/Si, and c) HfO2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO2/SiO2 are determined to be 3.4 ± 0.1, 1.5 ± 0.1, and 0.7 ± 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen plasma may induce excess oxygen species with negative charges, which could be removed by He plasma treatment. The final HfO2 capping layer deposition may reduce the internal potential inside the structures. The band structure was approaching to a flat band condition.
ContributorsZhu, Chiyu (Author) / Nemanich, Robert (Thesis advisor) / Chamberlin, Ralph (Committee member) / Chen, Tingyong (Committee member) / Ponce, Fernando (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2012
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Description
The transition to lead-free solder in the electronics industry has benefitted the environment in many ways. However, with new materials systems comes new materials issues. During the processing of copper pads, a protective surface treatment is needed to prevent the copper from oxidizing. Characterizing the copper oxidation underneath the surface

The transition to lead-free solder in the electronics industry has benefitted the environment in many ways. However, with new materials systems comes new materials issues. During the processing of copper pads, a protective surface treatment is needed to prevent the copper from oxidizing. Characterizing the copper oxidation underneath the surface treatment is challenging but necessary for product reliability and failure analysis. Currently, FIB-SEM, which is time-consuming and expensive, is what is used to understand and analyze the surface treatment-copper oxide(s)-copper system. This project's goals were to determine a characterization methodology that cuts both characterization time and cost in half for characterizing copper oxidation beneath a surface treatment and to determine which protective surface treatment is the best as defined by multiple criterion such as cost, sustainability, and reliability. Two protective surface treatments, organic solderability preservative (OSP) and chromium zincate, were investigated, and multiple characterization techniques were researched. Six techniques were tested, and three were deemed promising. Through our studies, it was determined that the best surface treatment was organic solderability preservative (OSP) and the ideal characterization methodology would be using FIB-SEM to calibrate a QCM model, along with using SERA to confirm the QCM model results. The methodology we propose would result in a 91% reduction in characterization cost and a 92% reduction in characterization time. Future work includes further calibration of the QCM model using more FIB/SEM data points and eventually creating a model for oxide layer thickness as a function of exposure time and processing temperature using QCM as the primary data source. In doing my Capstone project for Intel, a large electronics manufacturing company, I feel it is important to remember the effects of our tools and industry on the environment and to consider the product life cycle in terms other than monetary gain and raw material recycling. To this end I will be discussing how lead is and was used in manufacturing, how it is disposed of, and how this effects the environment including plant, animal, and insect life, as well as ground water contamination. Since the ban was enacted several years ago, I will compare how lead-free alternatives currently in use compare in environmental impact and possibly raise the question of whether we have simply traded one evil for another.
ContributorsBranch Kelly, Marion Zoe (Author) / Adams, James (Thesis director) / Krause, Stephen (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor)
Created2015-05
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Description
Although wind turbine bearings are designed to operate 18-20 years, in the recent years premature failure among these bearings has caused this life to reduce to as low as a few months to a year. One of the leading causes of premature failure called white structure flaking is a mechanism

Although wind turbine bearings are designed to operate 18-20 years, in the recent years premature failure among these bearings has caused this life to reduce to as low as a few months to a year. One of the leading causes of premature failure called white structure flaking is a mechanism that was first cited in literature decades ago but not much is understood about it even today. The cause of this mode of failure results from the initiation of white etched cracks (WECs). In this report, different failure mechanisms, especially premature failure mechanisms that were tested and analyzed are demonstrated as a pathway to understanding this phenomenon. Through the use of various tribometers, samples were tested in diverse and extreme conditions in order to study the effect of these different operational conditions on the specimen. Analysis of the tested samples allowed for a comparison of the microstructure alterations in the tested samples to the field bearings affected by WSF.
ContributorsSharma, Aman (Author) / Foy, Joseph (Thesis director) / Adams, James (Committee member) / Barrett, The Honors College (Contributor) / Mechanical and Aerospace Engineering Program (Contributor)
Created2015-05
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Description
This research examines the presentation of ASD in fictional children's literature. The goal is to use the research collected to determine what symptoms of ASD are receiving coverage versus what is not being covered but needs to be in a children's book about ASD. This was accomplished by first consulting

This research examines the presentation of ASD in fictional children's literature. The goal is to use the research collected to determine what symptoms of ASD are receiving coverage versus what is not being covered but needs to be in a children's book about ASD. This was accomplished by first consulting background literature on ASD before examining 40 children's books about characters on the spectrum. It was found that girls on the spectrum received less coverage than boys did, and that most books conformed to one of two types: looking at ASD through the eyes of a neurotypical child and looking at it through the eyes of a child who has it. This led to the proposed idea of a book about a girl on the spectrum that would alternate between her point of view and the point of view of her neurotypical friend, and the subsequent draft of said book.
ContributorsAnderson, Sarah (Contributor) / Baldini, Cajsa (Contributor) / Adams, James (Contributor) / Barrett, The Honors College (Contributor)
Created2014-12
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Description
The semiconductor industry looks to constantly improve the efficiency of research and development in order to reduce costs and time to market. One such method was designed in order to decrease time spent inducing warpage in integrated circuits in an Intel research process. Intel's Atom product line seeks to compete

The semiconductor industry looks to constantly improve the efficiency of research and development in order to reduce costs and time to market. One such method was designed in order to decrease time spent inducing warpage in integrated circuits in an Intel research process. Intel's Atom product line seeks to compete with ARM architecture by entering the mobile devices CPU market. Due to the fundamental differences between the Atom's Bonnell architecture and the ARM architecture, the Intel Atom product line must utilize such improved research and development methods. Until power consumption is drastically lowered while maintaining processing speed, the Atom product line will not be able to effectively break into the mobile devices CPU market.
ContributorsLandseidel, Jack Adam (Author) / Adams, James (Thesis director) / Krause, Stephen (Committee member) / Anwar, Shahriar (Committee member) / Barrett, The Honors College (Contributor) / School of Mathematical and Statistical Sciences (Contributor) / Materials Science and Engineering Program (Contributor)
Created2013-05
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Description
The characteristics possessed by undergraduates who have enjoyed success in an intern position are defined. Through an interview process, four traits were identified: multitasking, strong team work understanding, an inquisitive nature, and application of a cross-disciplinary mindset. An exposition of how these four traits are employed to ensure success in

The characteristics possessed by undergraduates who have enjoyed success in an intern position are defined. Through an interview process, four traits were identified: multitasking, strong team work understanding, an inquisitive nature, and application of a cross-disciplinary mindset. An exposition of how these four traits are employed to ensure success in an internship setting is then given. Finally, a personal account of a project with Intel is expounded upon. This project addressed the unoptimized characterization test time of an Intel package quality control process. It improved throughput by developing a parallel testing method by increasing package carrier capacity and utilizing simultaneous testing. The final design led to a 4x increase of throughput rate.
ContributorsHusein, Sebastian Saint Tsei (Author) / Adams, James (Thesis director) / Krause, Stephen (Committee member) / Jarrell, Joseph (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor)
Created2013-05
Description
The unemployment rate for adults with Autism Spectrum Disorders (ASDs) sits between 88 and 95 percent. With the prevalence of ASDs growing by the year, the transition into adulthood is a problem this country will increasingly face. To shed light on this issue and spread awareness, the method was to

The unemployment rate for adults with Autism Spectrum Disorders (ASDs) sits between 88 and 95 percent. With the prevalence of ASDs growing by the year, the transition into adulthood is a problem this country will increasingly face. To shed light on this issue and spread awareness, the method was to create a documentary 26 minutes in length about the transition adults with ASDs face after graduating high school. The result was "Breaking the Spectrum," which includes testimony from adults with ASDs who have jobs, attend skills programs or go to college, experts in the field and founders of organizations who seek to decrease the unemployment rate.
ContributorsLancial, Alexandra Marie (Author) / Craft, John (Thesis director) / Adams, James (Committee member) / Dodge, Nancie (Committee member) / Barrett, The Honors College (Contributor) / Walter Cronkite School of Journalism and Mass Communication (Contributor)
Created2014-05
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Description
Analysis of 4 lesson plans for primary education in which 3D printers are used either to build components or are directly used by students. Provides critique on how proper investment and utilization of this new technology can enrich education and misuse can waste time, money, and even reduce the quality

Analysis of 4 lesson plans for primary education in which 3D printers are used either to build components or are directly used by students. Provides critique on how proper investment and utilization of this new technology can enrich education and misuse can waste time, money, and even reduce the quality of education.
ContributorsPrzeslica, Michael Cody (Author) / Adams, James (Thesis director) / Krause, Stephen (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor)
Created2014-05