Matching Items (90)
152850-Thumbnail Image.png
Description
This dissertation presents research findings on the three materials systems: lateral Si nanowires (SiNW), In2Se3/Bi2Se3 heterostructures and graphene. The first part of the thesis was focused on the growth and characterization of lateral SiNW. Lateral here refers to wires growing along the plane of substrate; vertical NW on the other

This dissertation presents research findings on the three materials systems: lateral Si nanowires (SiNW), In2Se3/Bi2Se3 heterostructures and graphene. The first part of the thesis was focused on the growth and characterization of lateral SiNW. Lateral here refers to wires growing along the plane of substrate; vertical NW on the other hand grow out of the plane of substrate. It was found, using the Au-seeded vapor – liquid – solid technique, that epitaxial single-crystal SiNW can be grown laterally along Si(111) substrates that have been miscut toward [11− 2]. The ratio of lateral-to-vertical NW was found to increase as the miscut angle increased and as disilane pressure and substrate temperature decreased. Based on this observation, growth parameters were identified whereby all of the deposited Au seeds formed lateral NW. Furthermore, the nanofaceted substrate guided the growth via a mechanism that involved pinning of the trijunction at the liquid/solid interface of the growing nanowire.

Next, the growth of selenide heterostructures was explored. Specifically, molecular beam epitaxy was utilized to grow In2Se3 and Bi2Se3 films on h-BN, highly oriented pyrolytic graphite and Si(111) substrates. Growth optimizations of In2Se3 and Bi2Se3 films were carried out by systematically varying the growth parameters. While the growth of these films was demonstrated on h-BN and HOPG surface, the majority of the effort was focused on growth on Si(111). Atomically flat terraces that extended laterally for several hundred nm, which were separated by single quintuple layer high steps characterized surface of the best In2Se3 films grown on Si(111). These In2Se3 films were suitable for subsequent high quality epitaxy of Bi2Se3 .

The last part of this dissertation was focused on a recently initiated and ongoing study of graphene growth on liquid metal surfaces. The initial part of the study comprised a successful modification of an existing growth system to accommodate graphene synthesis and process development for reproducible graphene growth. Graphene was grown on Cu, Au and AuCu alloys at varioua conditions. Preliminary results showed triangular features on the liquid part of the Cu metal surface. For Au, and AuCu alloys, hexagonal features were noticed both on the solid and liquid parts.
ContributorsRathi, Somilkumar J (Author) / Drucker, Jeffery (Thesis advisor) / Smith, David (Committee member) / Chen, Tingyong (Committee member) / Arizona State University (Publisher)
Created2014
153758-Thumbnail Image.png
Description
GaN and AlGaN have shown great potential in next-generation power and RF electronics. However, these devices are limited by reliability issues such as leakage current and current collapse that result from surface and interface states on GaN and AlGaN. This dissertation, therefore, examined these electronic states, focusing on the following

GaN and AlGaN have shown great potential in next-generation power and RF electronics. However, these devices are limited by reliability issues such as leakage current and current collapse that result from surface and interface states on GaN and AlGaN. This dissertation, therefore, examined these electronic states, focusing on the following two points:

First, the surface electronic state configuration was examined with regards to the polarization bound 1013 charges/cm2 that increases with aluminum content. This large bound charge requires compensation either externally by surface states or internally by the space charge regions as relates to band bending. In this work, band bending was measured after different surface treatments of GaN and AlGaN to determine the effects of specific surface states on the electronic state configuration. Results showed oxygen-terminated N-face GaN, Ga-face GaN, and Ga-face Al0.25Ga0.75N surface were characterized by similar band bending regardless of the polarization bound charge, suggesting a Fermi level pinning state ~0.4-0.8 eV below the conduction band minimum. On oxygen-free Ga-face GaN, Al0.15Ga0.85N, Al0.25Ga0.75N, and Al0.35Ga0.65N, band bending increased slightly with aluminum content and thus did not exhibit the same pinning behavior; however, there was still significant compensating charge on these surfaces (~1013 charges/cm2). This charge is likely related to nitrogen vacancies and/or gallium dangling bonds.

In addition, this wozrk investigated the interface electronic state configuration of dielectric/GaN and AlGaN interfaces with regards to deposition conditions and aluminum content. Specifically, oxygen plasma-enhanced atomic layer deposited (PEALD) was used to deposit SiO2. Growth temperature was shown to influence the film quality, where room temperature deposition produced the highest quality films in terms of electrical breakdown. In addition, the valence band offsets (VBOs) appeared to decrease with the deposition temperature, which likely related to an electric field across the Ga2O3 interfacial layer. VBOs were also determined with respect to aluminum content at the PEALD-SiO2/AlxGa1-xN interface, giving 3.0, 2.9, 2.9, and 2.8 eV for 0%, 15%, 25%, and 35% aluminum content, respectively—with corresponding conduction band offsets of 2.5, 2.2, 1.9, and 1.8 eV. This suggests the largest difference manifests in the conduction band, which is in agreement with the charge neutrality level model.
ContributorsEller, Brianna (Author) / Nemanich, Robert J (Thesis advisor) / Chowdhury, Srabanti (Committee member) / McCartney, Martha (Committee member) / Ponce, Fernando (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2015
155461-Thumbnail Image.png
Description
Zinc oxide nanowires ( NWs) have broad applications in various fields such as nanoelectronics, optoelectronics, piezoelectric nanogenerators, chemical/biological sensors, and heterogeneous catalysis. To meet the requirements for broader applications, the growth of high-quality ZnO NWs and functionalization of ZnO NWs are critical. In this work, specific types of functionalized ZnO

Zinc oxide nanowires ( NWs) have broad applications in various fields such as nanoelectronics, optoelectronics, piezoelectric nanogenerators, chemical/biological sensors, and heterogeneous catalysis. To meet the requirements for broader applications, the growth of high-quality ZnO NWs and functionalization of ZnO NWs are critical. In this work, specific types of functionalized ZnO NWs have been synthesized and correlations between specific structures and properties have been investigated. Deposition of δ-Bi2O3 (narrow band gap) epilayers onto ZnO (wide band gap) NWs improves the absorption efficiency of the visible light spectrum by 70%. Furthermore, the deposited δ-Bi2O3 grows selectively and epitaxially on the {11-20} but not on the {10-10} facets of the ZnO NWs. The selective epitaxial deposition and the interfacial structure were thoroughly investigated. The morphology and structure of the Bi2O3/ZnO nanocomposites can be tuned by controlling the deposition conditions.

Various deposition methods, both physical and chemical, were used to functionalize the ZnO NWs with metal or alloy nanoparticles (NPs) for catalytic transformations of important molecules which are relevant to energy and environment. Cu and PdZn NPs were epitaxially grown on ZnO NWs to make them resistant to sintering at elevated temperatures and thus improved the stability of such catalytic systems for methanol steam reforming (MSR) to produce hydrogen. A series of Pd/ZnO catalysts with different Pd loadings were synthesized and tested for MSR reaction. The CO selectivity was found to be strongly dependent on the size of the Pd: Both PdZn alloy and single Pd atoms yield low CO selectivity while Pd clusters give the highest CO selectivity.

By dispersing single Pd atoms onto ZnO NWs, Pd1/ZnO single-atom catalysts (SACs) was synthesized and their catalytic performance was evaluated for selected catalytic reactions. The experimental results show that the Pd1/ZnO SAC is active for CO oxidation and MSR but is not desirable other reactions. We further synthesized ZnO NWs supported noble metal (M1/ZnO; M=Rh, Pd, Pt, Ir) SACs and studied their catalytic performances for CO oxidation. The catalytic test data shows that all the fabricated noble metal SACs are active for CO oxidation but their activity are significantly different. Structure-performance relationships were investigated.
ContributorsXu, Jia, Ph.D (Author) / Liu, Jingyue (Thesis advisor) / Smith, David (Committee member) / Chan, Candace (Committee member) / Mu, Bin (Committee member) / Arizona State University (Publisher)
Created2017
158095-Thumbnail Image.png
Description
A model of self-heating is incorporated into a Cellular Monte Carlo (CMC) particle-based device simulator through the solution of an energy balance equation (EBE) for phonons. The EBE self-consistently couples charge and heat transport in the simulation through a novel approach to computing the heat generation rate in

A model of self-heating is incorporated into a Cellular Monte Carlo (CMC) particle-based device simulator through the solution of an energy balance equation (EBE) for phonons. The EBE self-consistently couples charge and heat transport in the simulation through a novel approach to computing the heat generation rate in the device under study. First, the moments of the Boltzmann Transport equation (BTE) are discussed, and subsequently the EBE of for phonons is derived. Subsequently, several tests are performed to verify the applicability and accuracy of a nonlinear iterative method for the solution of the EBE in the presence of convective boundary conditions, as compared to a finite element analysis solver as well as using the Kirchhoff transformation. The coupled electrothermal characterization of a GaN/AlGaN high electron mobility transistor (HEMT) is then performed, and the effects of non-ideal interfaces and boundary conditions are studied.



The proposed thermal model is then applied to a novel $\Pi$-gate architecture which has been suggested to reduce hot electron generation in the device, compared to the conventional T-gate. Additionally, small signal ac simulations are performed for the determination of cutoff frequencies using the thermal model as well.

Finally, further extensions of the CMC algorithm used in this work are discussed, including 1) higher-order moments of the phonon BTE, 2) coupling to phonon Monte Carlo simulations, and 3) application to other large-bandgap, and therefore high-power, materials such as diamond.
ContributorsMerrill, Ky (Author) / Saraniti, Marco (Thesis advisor) / Goodnick, Stephen (Committee member) / Smith, David (Committee member) / Wang, Robert (Committee member) / Arizona State University (Publisher)
Created2020
129520-Thumbnail Image.png
Description

Current research on criminal case processing typically examines a single decision-making point, so drawing reliable conclusions about the impact that factors such as defendants’ race or ethnicity exert across successive stages of the justice system is difficult. Using data from the New York County District Attorney's Office that tracks 185,275

Current research on criminal case processing typically examines a single decision-making point, so drawing reliable conclusions about the impact that factors such as defendants’ race or ethnicity exert across successive stages of the justice system is difficult. Using data from the New York County District Attorney's Office that tracks 185,275 diverse criminal cases, this study assesses racial and ethnic disparity for multiple discretionary points of prosecution and sentencing. Findings from multivariate logistic regression analyses demonstrate that the effects of race and ethnicity vary by discretionary point and offense category. Black and Latino defendants were more likely than White defendants to be detained, to receive a custodial plea offer, and to be incarcerated—and they received especially punitive outcomes for person offenses—but were more likely to benefit from case dismissals. The findings for Asian defendants were less consistent but suggest they were the least likely to be detained, to receive custodial offers, and to be incarcerated. These findings are discussed in the context of contemporary theoretical perspectives on racial bias and cumulative disadvantage in the justice system.

Created2014-08-01
129533-Thumbnail Image.png
Description

Novel hydride chemistries are employed to deposit light-emitting Ge1-y Snyalloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold

Novel hydride chemistries are employed to deposit light-emitting Ge1-y Snyalloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ≤ 0.06, the CVD precursors used were digermane Ge2H6 and deuterated stannane SnD4. For y ≥ 0.06, the Ge precursor was changed to trigermane Ge3H8, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge4H10 as the Ge source. The photoluminescence intensity from Ge1-y Sny /Ge films is expected to increase relative to Ge1-y Sny /Si due to the less defected interface with the virtual substrate. However, while Ge1-y Sny /Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge1-y Sny /Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge1-y Sny /Ge makes it possible to approach film thicknesses of about 1  μm, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge1-y Sny /Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si1-x Gex /Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

ContributorsSenaratne, Charutha Lasitha (Author) / Gallagher, J. D. (Author) / Jiang, Liying (Author) / Aoki, Toshihiro (Author) / Smith, David (Author) / Menéndez, Jose (Author) / Kouvetakis, John (Author) / Department of Chemistry and Biochemistry (Contributor)
Created2014-10-07
129373-Thumbnail Image.png
Description

Simons and Burt's (2011) social schematic theory (SST) of crime posits that adverse social factors are associated with offending because they promote a set of social schemas (i.e., a criminogenic knowledge structure) that elevates the probability of situational definitions favorable to crime. This study extends the SST model by incorporating

Simons and Burt's (2011) social schematic theory (SST) of crime posits that adverse social factors are associated with offending because they promote a set of social schemas (i.e., a criminogenic knowledge structure) that elevates the probability of situational definitions favorable to crime. This study extends the SST model by incorporating the role of contexts for action. Furthermore, the study advances tests of the SST by incorporating a measure of criminogenic situational definitions to assess whether such definitions mediate the effects of schemas and contexts on crime. Structural equation models using 10 years of panel data from 582 African American youth provided strong support for the expanded theory. The results suggest that childhood and adolescent social adversity fosters a criminogenic knowledge structure as well as selection into criminogenic activity spaces and risky activities, all of which increase the likelihood of offending largely through situational definitions. Additionally, evidence shows that the criminogenic knowledge structure interacts with settings to amplify the likelihood of situational definitions favorable to crime.

ContributorsSimons, Ronald (Author) / Burt, Callie (Author) / Barr, Ashley B. (Author) / Lei, Man-Kit (Author) / Stewart, Eric (Author) / College of Public Service and Community Solutions (Contributor)
Created2014-11-01
129380-Thumbnail Image.png
Description

Cyberstalking is a relatively understudied area in criminology, with no consensus among scholars as to whether it represents a modified form of stalking or whether it is an entirely new and emerging criminal phenomenon. Using data from the 2006 Supplemental Victimization Survey (SVS) to the National Crime Victimization Survey (NCVS),

Cyberstalking is a relatively understudied area in criminology, with no consensus among scholars as to whether it represents a modified form of stalking or whether it is an entirely new and emerging criminal phenomenon. Using data from the 2006 Supplemental Victimization Survey (SVS) to the National Crime Victimization Survey (NCVS), this study compares stalking and cyberstalking victims across several dimensions, including situational features of their experiences and self-protective behaviors. Results indicate that there are significant differences between stalking and cyberstalking victims, including their number of self-protective behaviors adopted, duration of contact with their stalker, financial costs of victimization, and perceived fear at onset. Perceived fear over time, the occurrence of a physical attack, and sex of the victim were all associated with a higher number of self-protective behaviors for cyberstalking victims compared to stalking victims, net of the effect of the control variables. Implications for stalking theory, research, and criminal justice policy are discussed.

ContributorsNobles, Matt R. (Author) / Reyns, Bradford W. (Author) / Fox, Kate (Author) / Fisher, Bonnie S. (Author) / College of Public Service and Community Solutions (Contributor)
Created2013-11-30
129387-Thumbnail Image.png
Description

The Phoenix TRUCE Project was modeled after the Chicago CeaseFire program. There have been relatively few process and impact evaluations on the model compared to the level of funding and attention the program has rendered. This paper presents findings related to the evaluation of the TRUCE project. We found that

The Phoenix TRUCE Project was modeled after the Chicago CeaseFire program. There have been relatively few process and impact evaluations on the model compared to the level of funding and attention the program has rendered. This paper presents findings related to the evaluation of the TRUCE project. We found that the program engaged in a strong media campaign, conducted conflict mediations, and identified high-risk individuals for case management. The program did not, however, establish a coordinated and collaborative relationship with the faith-based community or other community groups. Time-series analysis showed that program implementation corresponded to a significant decrease in overall levels of violence by more than 16 incidents on average per month, a decrease of 16 assaults on average per month, and resulted in a significant increase of 3.2 shootings on average per month, controlling for the comparison areas and the trends in the data.

ContributorsFox, Andrew M. (Author) / Katz, Charles (Author) / Choate, David (Author) / Hedberg, Eric (Author) / College of Public Service and Community Solutions (Contributor)
Created2015-01-02
129390-Thumbnail Image.png
Description

Research Summary:
Using U.S. Sentencing Commission data, this study assesses whether judicial downward departures are more prevalent among child pornography offenders compared with a matched sample of defendants convicted of other offenses. Additionally, we examine reasons given by judges when departing from the guidelines for these offenders. We found that child

Research Summary:
Using U.S. Sentencing Commission data, this study assesses whether judicial downward departures are more prevalent among child pornography offenders compared with a matched sample of defendants convicted of other offenses. Additionally, we examine reasons given by judges when departing from the guidelines for these offenders. We found that child pornography defendants received significant reductions in sentences by way of judicial downward departures.

Policy Implications:
In 2007, the Supreme Court considerably altered the federal sentencing process. In Kimbrough v. United States (2007), the Court held that judicial departures were permissible on grounds of a policy disagreement. Many circuit courts have authorized sentencing judges to depart from the guidelines in child pornography cases based on such a policy disagreement. The findings of this study suggest that judicial downward departures for these offenders cannot be explained by individual characteristics, such as race, gender, or age, and may be indicative of a specific disagreement with this particular sentencing policy. An examination of the reasons provided by judges supports the hypothesis that judges may be attempting to remedy what they perceive as unjustly harsh sentencing guidelines.

Created2014-05-01