Matching Items (54)
Description
Binary transition metal dichalcogenide monolayers share common properties such as a direct optical bandgap, spin-orbit splittings of hundreds of meV, light–matter interaction dominated by robust excitons and coupled spin-valley states. Here we demonstrate spin-orbit-engineering in Mo[(1-x)]WxSe2 alloy monolayers for optoelectronics and applications based on spin- and valley-control. We probe the impact of the tuning of the conduction band spin-orbit spin-splitting on the bright versus dark exciton population. For MoSe2 monolayers, the photoluminescence intensity decreases as a function of temperature by an order of magnitude (4–300 K), whereas for WSe2 we measure surprisingly an order of magnitude increase. The ternary material shows a trend between these two extreme behaviors. We also show a non-linear increase of the valley polarization as a function of tungsten concentration, where 40% tungsten incorporation is sufficient to achieve valley polarization as high as in binary WSe2.
ContributorsWang, Gang (Author) / Robert, Cedric (Author) / Tuna, Aslihan (Author) / Chen, Bin (Author) / Yang, Sijie (Author) / Alamdari, Sarah (Author) / Gerber, Iann C. (Author) / Amand, Thierry (Author) / Marie, Xavier (Author) / Tongay, Sefaattin (Author) / Urbaszek, Bernhard (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2015-12-14
Description
Alloying in semiconductors has enabled many civilian technologies in optoelectronic, photonic fields and more. While the phenomenon of alloying is well established in traditional bulk semiconductors, owing to vastly available ternary phase diagrams, the ability to alloy in 2D systems are less clear. Recently anisotropic materials such as ReS2 and TiS3 have been extensively studied due to their direct-gap semiconductor and high mobility behaviors. This work is a report on alloys of ReS2 & ReSe2 and TiS3 &TiSe3.
Alloying selenium into ReS2 in the creation of ReS2xSe2-x, tunes the band gap and changes its vibrational spectrum. Depositing this alloy using bottom up approach has resulted in the loss of crystallinity. This loss of crystallinity was evidenced by grain boundaries and point defect shown by TEM images.
Also, in the creation of TiS3xSe3-x, by alloying Se into TiS3, a fixed ratio of 8% selenium deposit into TiS3 host matrix is observed. This is despite the vastly differing precursor amounts and growth temperatures, as evinced by detailed TEM, EDAX, TEM diffraction, and Raman spectroscopy measurements. This unusual behavior contrasts with other well-known layered material systems such as MoSSe, WMoS2 where continuous alloying can be attained. Cluster expansion theory calculations suggest that only limited composition (x) can be achieved. Considering the fact that TiSe3 vdW crystals have not been synthesized in the past, these alloying rejections can be attributed to energetic instability in the ternary phase diagrams estimated by calculations performed. Overall findings highlight potential means and challenges in achieving stable alloying in promising direct gap and high carrier mobility TiS3 materials.
Alloying selenium into ReS2 in the creation of ReS2xSe2-x, tunes the band gap and changes its vibrational spectrum. Depositing this alloy using bottom up approach has resulted in the loss of crystallinity. This loss of crystallinity was evidenced by grain boundaries and point defect shown by TEM images.
Also, in the creation of TiS3xSe3-x, by alloying Se into TiS3, a fixed ratio of 8% selenium deposit into TiS3 host matrix is observed. This is despite the vastly differing precursor amounts and growth temperatures, as evinced by detailed TEM, EDAX, TEM diffraction, and Raman spectroscopy measurements. This unusual behavior contrasts with other well-known layered material systems such as MoSSe, WMoS2 where continuous alloying can be attained. Cluster expansion theory calculations suggest that only limited composition (x) can be achieved. Considering the fact that TiSe3 vdW crystals have not been synthesized in the past, these alloying rejections can be attributed to energetic instability in the ternary phase diagrams estimated by calculations performed. Overall findings highlight potential means and challenges in achieving stable alloying in promising direct gap and high carrier mobility TiS3 materials.
ContributorsAgarwal, Ashutosh (Author) / Tongay, Sefaattin (Thesis advisor) / Green, Matthew (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2018
Description
Hyperspectral imaging is a novel technology which allows for the collection of reflectance spectra of a sample in-situ and at a distance. A rapidly developing technology, hyperspectral imaging has been of particular interest in the field of art characterization, authentication, and conservation as it avoids the pitfalls of traditional characterization techniques and allows for the rapid and wide collection of data never before possible. It is hypothesized that by combining the power of hyperspectral imaging with machine learning, a new framework for the in-situ and automated characterization and authentication of artworks can be developed. This project, using the CMYK set of inks, began the preliminary development of such a framework. It was found that hyperspectral imaging and machine learning as a combination show significant potential as an avenue for art authentication, though further progress and research is needed to match the reliability of status quo techniques.
ContributorsChowdhury, Tanzil Aziz (Author) / Newman, Nathan (Thesis director) / Tongay, Sefaattin (Committee member) / School of Politics and Global Studies (Contributor) / Materials Science and Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2020-05
Description
Transition metal dichalcogenides (TMDs) are a family of layered crystals with the chemical formula MX2 (M = W, Nb, Mo, Ta and X = S, Se, Te). These TMDs exhibit many fascinating optical and electronic properties making them strong candidates for high-end electronics, optoelectronic application, and spintronics. The layered structure of TMDs allows the crystal to be mechanically exfoliated to a monolayer limit, where bulk-scale properties no longer apply and quantum effects arise, including an indirect-to-direct bandgap transition. Controllably tuning the electronic properties of TMDs like WSe2 is therefore a highly attractive prospect achieved by substitutionally doping the metal atoms to enable n- and p-type doping at various concentrations, which can ultimately lead to more effective electronic devices due to increased charge carriers, faster transmission times and possibly new electronic and optical properties to be probed. WSe2 is expected to exhibit the largest spin splitting size and spin-orbit coupling, which leads to exciting potential applications in spintronics over its similar TMD counterparts, which can be controlled through electrical doping. Unfortunately, the well-established doping technique of ion implantation is unable to preserve the crystal quality leading to a major roadblock for the electronics applications of tungsten diselenide. Synthesizing WSe2 via chemical vapor transport (CVT) and flux method have been previously established, but controllable p-type (niobium) doping WSe2 in low concentrations ranges (<1 at %) by CVT methods requires further experimentation and study. This work studies the chemical vapor transport synthesis of doped-TMD W1-xNbxSe2 through characterization techniques of X-ray Diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, and X-ray Photoelectron Spectroscopy techniques. In this work, it is observed that excess selenium transport does not enhance the controllability of niobium doping in WSe2, and that tellurium tetrachloride (TeCl4) transport has several barriers in successfully incorporating niobium into WSe2.
ContributorsRuddick, Hayley (Author) / Tongay, Sefaattin (Thesis director) / Jiao, Yang (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor)
Created2024-05