This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students. 

Displaying 1 - 10 of 333
Filtering by

Clear all filters

150059-Thumbnail Image.png
Description
Dynamic loading is the term used for one way of optimally loading a transformer. Dynamic loading means the utility takes into account the thermal time constant of the transformer along with the cooling mode transitions, loading profile and ambient temperature when determining the time-varying loading capability of a transformer. Knowing

Dynamic loading is the term used for one way of optimally loading a transformer. Dynamic loading means the utility takes into account the thermal time constant of the transformer along with the cooling mode transitions, loading profile and ambient temperature when determining the time-varying loading capability of a transformer. Knowing the maximum dynamic loading rating can increase utilization of the transformer while not reducing life-expectancy, delaying the replacement of the transformer. This document presents the progress on the transformer dynamic loading project sponsored by Salt River Project (SRP). A software application which performs dynamic loading for substation distribution transformers with appropriate transformer thermal models is developed in this project. Two kinds of thermal hottest-spot temperature (HST) and top-oil temperature (TOT) models that will be used in the application--the ASU HST/TOT models and the ANSI models--are presented. Brief validations of the ASU models are presented, showing that the ASU models are accurate in simulating the thermal processes of the transformers. For this production grade application, both the ANSI and the ASU models are built and tested to select the most appropriate models to be used in the dynamic loading calculations. An existing application to build and select the TOT model was used as a starting point for the enhancements developed in this work. These enhancements include:  Adding the ability to develop HST models to the existing application,  Adding metrics to evaluate the models accuracy and selecting which model will be used in dynamic loading calculation  Adding the capability to perform dynamic loading calculations,  Production of a maximum dynamic load profile that the transformer can tolerate without acceleration of the insulation aging,  Provide suitable output (plots and text) for the results of the dynamic loading calculation. Other challenges discussed include: modification to the input data format, data-quality control, cooling mode estimation. Efforts to overcome these challenges are discussed in this work.
ContributorsLiu, Yi (Author) / Tylavksy, Daniel J (Thesis advisor) / Karady, George G. (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2011
150044-Thumbnail Image.png
Description
The purpose of this study was to investigate the effect of partial exemplar experience on category formation and use. Participants had either complete or limited access to the three dimensions that defined categories by dimensions within different modalities. The concept of "crucial dimension" was introduced and the role it plays

The purpose of this study was to investigate the effect of partial exemplar experience on category formation and use. Participants had either complete or limited access to the three dimensions that defined categories by dimensions within different modalities. The concept of "crucial dimension" was introduced and the role it plays in category definition was explained. It was hypothesized that the effects of partial experience are not explained by a shifting of attention between dimensions (Taylor & Ross, 2009) but rather by an increased reliance on prototypical values used to fill in missing information during incomplete experiences. Results indicated that participants (1) do not fill in missing information with prototypical values, (2) integrate information less efficiently between different modalities than within a single modality, and (3) have difficulty learning only when partial experience prevents access to diagnostic information.
ContributorsCrawford, Thomas (Author) / Homa, Donald (Thesis advisor) / Mcbeath, Micheal (Committee member) / Glenberg, Arthur (Committee member) / Arizona State University (Publisher)
Created2011
150050-Thumbnail Image.png
Description
The development of a Solid State Transformer (SST) that incorporates a DC-DC multiport converter to integrate both photovoltaic (PV) power generation and battery energy storage is presented in this dissertation. The DC-DC stage is based on a quad-active-bridge (QAB) converter which not only provides isolation for the load, but also

The development of a Solid State Transformer (SST) that incorporates a DC-DC multiport converter to integrate both photovoltaic (PV) power generation and battery energy storage is presented in this dissertation. The DC-DC stage is based on a quad-active-bridge (QAB) converter which not only provides isolation for the load, but also for the PV and storage. The AC-DC stage is implemented with a pulse-width-modulated (PWM) single phase rectifier. A unified gyrator-based average model is developed for a general multi-active-bridge (MAB) converter controlled through phase-shift modulation (PSM). Expressions to determine the power rating of the MAB ports are also derived. The developed gyrator-based average model is applied to the QAB converter for faster simulations of the proposed SST during the control design process as well for deriving the state-space representation of the plant. Both linear quadratic regulator (LQR) and single-input-single-output (SISO) types of controllers are designed for the DC-DC stage. A novel technique that complements the SISO controller by taking into account the cross-coupling characteristics of the QAB converter is also presented herein. Cascaded SISO controllers are designed for the AC-DC stage. The QAB demanded power is calculated at the QAB controls and then fed into the rectifier controls in order to minimize the effect of the interaction between the two SST stages. The dynamic performance of the designed control loops based on the proposed control strategies are verified through extensive simulation of the SST average and switching models. The experimental results presented herein show that the transient responses for each control strategy match those from the simulations results thus validating them.
ContributorsFalcones, Sixifo Daniel (Author) / Ayyanar, Raja (Thesis advisor) / Karady, George G. (Committee member) / Tylavsky, Daniel (Committee member) / Tsakalis, Konstantinos (Committee member) / Arizona State University (Publisher)
Created2011
149644-Thumbnail Image.png
Description
Intuitive decision making refers to decision making based on situational pattern recognition, which happens without deliberation. It is a fast and effortless process that occurs without complete awareness. Moreover, it is believed that implicit learning is one means by which a foundation for intuitive decision making is developed. Accordingly, the

Intuitive decision making refers to decision making based on situational pattern recognition, which happens without deliberation. It is a fast and effortless process that occurs without complete awareness. Moreover, it is believed that implicit learning is one means by which a foundation for intuitive decision making is developed. Accordingly, the present study investigated several factors that affect implicit learning and the development of intuitive decision making in a simulated real-world environment: (1) simple versus complex situational patterns; (2) the diversity of the patterns to which an individual is exposed; (3) the underlying mechanisms. The results showed that simple patterns led to higher levels of implicit learning and intuitive decision-making accuracy than complex patterns; increased diversity enhanced implicit learning and intuitive decision-making accuracy; and an embodied mechanism, labeling, contributes to the development of intuitive decision making in a simulated real-world environment. The results suggest that simulated real-world environments can provide the basis for training intuitive decision making, that diversity is influential in the process of training intuitive decision making, and that labeling contributes to the development of intuitive decision making. These results are interpreted in the context of applied situations such as military applications involving remotely piloted aircraft.
ContributorsCovas-Smith, Christine Marie (Author) / Cooke, Nancy J. (Thesis advisor) / Patterson, Robert (Committee member) / Glenberg, Arthur (Committee member) / Homa, Donald (Committee member) / Arizona State University (Publisher)
Created2011
149932-Thumbnail Image.png
Description
Recent changes in the energy markets structure combined with the conti-nuous load growth have caused power systems to be operated under more stressed conditions. In addition, the nature of power systems has also grown more complex and dynamic because of the increasing use of long inter-area tie-lines and the high

Recent changes in the energy markets structure combined with the conti-nuous load growth have caused power systems to be operated under more stressed conditions. In addition, the nature of power systems has also grown more complex and dynamic because of the increasing use of long inter-area tie-lines and the high motor loads especially those comprised mainly of residential single phase A/C motors. Therefore, delayed voltage recovery, fast voltage collapse and short term voltage stability issues in general have obtained significant importance in relia-bility studies. Shunt VAr injection has been used as a countermeasure for voltage instability. However, the dynamic and fast nature of short term voltage instability requires fast and sufficient VAr injection, and therefore dynamic VAr devices such as Static VAr Compensators (SVCs) and STATic COMpensators (STAT-COMs) are used. The location and size of such devices are optimized in order to improve their efficiency and reduce initial costs. In this work time domain dy-namic analysis was used to evaluate trajectory voltage sensitivities for each time step. Linear programming was then performed to determine the optimal amount of required VAr injection at each bus, using voltage sensitivities as weighting factors. Optimal VAr injection values from different operating conditions were weighted and averaged in order to obtain a final setting of the VAr requirement. Some buses under consideration were either assigned very small VAr injection values, or not assigned any value at all. Therefore, the approach used in this work was found to be useful in not only determining the optimal size of SVCs, but also their location.
ContributorsSalloum, Ahmed (Author) / Vittal, Vijay (Thesis advisor) / Heydt, Gerald (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2011
149937-Thumbnail Image.png
Description
There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon

There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows this function to be performed with a single chip thereby cutting costs. The ability for the MESFET to cost effectively satisfy the needs of this any many other high current/voltage device application markets is what drives the study of MESFET optimization. Silicon MESFETs that are integrated into standard SOI CMOS processes often receive dopings during fabrication that would not ideally be there in a process made exclusively for MESFETs. Since these remnants of SOI CMOS processing effect the operation of a MESFET device, their effect can be seen in the current-voltage characteristics of a measured MESFET device. Device simulations are done and compared to measured silicon MESFET data in order to deduce the cause and effect of many of these SOI CMOS remnants. MESFET devices can be made in both fully depleted (FD) and partially depleted (PD) SOI CMOS technologies. Device simulations are used to do a comparison of FD and PD MESFETs in order to show the advantages and disadvantages of MESFETs fabricated in different technologies. It is shown that PD MESFET have the highest current per area capability. Since the PD MESFET is shown to have the highest current capability, a layout optimization method to further increase the current per area capability of the PD silicon MESFET is presented, derived, and proven to a first order.
ContributorsSochacki, John (Author) / Thornton, Trevor J (Thesis advisor) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
149909-Thumbnail Image.png
Description
ABSTRACT The purpose of this study is to demonstrate that stable lipid bilayers can be set up on an array of silicon micropores and can be used as sites for self-inserting ion-channel proteins which can be studied independently of each other. In course of this study an acrylic

ABSTRACT The purpose of this study is to demonstrate that stable lipid bilayers can be set up on an array of silicon micropores and can be used as sites for self-inserting ion-channel proteins which can be studied independently of each other. In course of this study an acrylic based holder was designed and machined to ensure leak-free fluidic access to the silicon micropores and physical isolation of the individual array channels. To measure the ion-channel currents, we simulated, designed and manufactured low-noise transimpedance amplifiers and support circuits based on published patch clamp amplifier designs, using currently available surface-mount components. This was done in order to achieve a reduction in size and costs as well as isolation of individual channels without the need for multiplexing of the input. During the experiments performed, stable bilayers were formed across an array of four vertically mounted 30 µm silicon micropores and OmpF porins were added for self insertion in each of the bilayers. To further demonstrate the independence of these bilayer recording sites, the antibiotic Ampicillin (2.5 mM) was added to one of the fluidic wells. The ionic current in each of the wells was recorded simultaneously. Sub-conductance states of Ompf porin were observed in two of the measurement sites. In addition, the conductance steps in the site containing the antibiotic could be clearly seen to be larger compared to those of the unmodified site. This is due to the transient blocking of ion flow through the porin due to translocation of the antibiotic. Based on this demonstration, ion-channel array reconstitution is a potential method for efficient electrophysiological characterization of different types of ion-channels simultaneously as well as for studying membrane permeation processes.
ContributorsRamakrishnan, Shankar (Author) / Goryll, Michael (Thesis advisor) / Thornton, Trevor J (Committee member) / Blain Christen, Jennifer M (Committee member) / Arizona State University (Publisher)
Created2011
149962-Thumbnail Image.png
Description
In the last few years, significant advances in nanofabrication have allowed tailoring of structures and materials at a molecular level enabling nanofabrication with precise control of dimensions and organization at molecular length scales, a development leading to significant advances in nanoscale systems. Although, the direction of progress seems to follow

In the last few years, significant advances in nanofabrication have allowed tailoring of structures and materials at a molecular level enabling nanofabrication with precise control of dimensions and organization at molecular length scales, a development leading to significant advances in nanoscale systems. Although, the direction of progress seems to follow the path of microelectronics, the fundamental physics in a nanoscale system changes more rapidly compared to microelectronics, as the size scale is decreased. The changes in length, area, and volume ratios due to reduction in size alter the relative influence of various physical effects determining the overall operation of a system in unexpected ways. One such category of nanofluidic structures demonstrating unique ionic and molecular transport characteristics are nanopores. Nanopores derive their unique transport characteristics from the electrostatic interaction of nanopore surface charge with aqueous ionic solutions. In this doctoral research cylindrical nanopores, in single and array configuration, were fabricated in silicon-on-insulator (SOI) using a combination of electron beam lithography (EBL) and reactive ion etching (RIE). The fabrication method presented is compatible with standard semiconductor foundries and allows fabrication of nanopores with desired geometries and precise dimensional control, providing near ideal and isolated physical modeling systems to study ion transport at the nanometer level. Ion transport through nanopores was characterized by measuring ionic conductances of arrays of nanopores of various diameters for a wide range of concentration of aqueous hydrochloric acid (HCl) ionic solutions. Measured ionic conductances demonstrated two distinct regimes based on surface charge interactions at low ionic concentrations and nanopore geometry at high ionic concentrations. Field effect modulation of ion transport through nanopore arrays, in a fashion similar to semiconductor transistors, was also studied. Using ionic conductance measurements, it was shown that the concentration of ions in the nanopore volume was significantly changed when a gate voltage on nanopore arrays was applied, hence controlling their transport. Based on the ion transport results, single nanopores were used to demonstrate their application as nanoscale particle counters by using polystyrene nanobeads, monodispersed in aqueous HCl solutions of different molarities. Effects of field effect modulation on particle transition events were also demonstrated.
ContributorsJoshi, Punarvasu (Author) / Thornton, Trevor J (Thesis advisor) / Goryll, Michael (Thesis advisor) / Spanias, Andreas (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011
150248-Thumbnail Image.png
Description
In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work,

In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in threshold voltage and percentage change in drain current fluctuation in the saturation region. It has been observed as a result of the simulation that changes in both and values moderately decrease as the defect position is gradually moved from source end to the drain end of the channel. Precise analytical device physics based model needs to be developed to explain and assess the EMC simulation based higher VT fluctuations as experienced for trap positions at the source side. A new analytical model has been developed that simultaneously takes account of dopant number variations in the channel and depletion region underneath and carrier mobility fluctuations resulting from fluctuations in surface potential barriers. Comparisons of this new analytical model along with existing analytical models are shown to correlate with 3D EMC simulation based model for assessment of VT fluctuations percentage induced by a single interface trap. With scaling of devices beyond 32 nm node, halo doping at the source and drain are routinely incorporated to combat the threshold voltage roll-off that takes place with effective channel length reduction. As a final study on this regard, 3D EMC simulation method based computations of threshold voltage fluctuations have been performed for varying source and drain halo pocket length to illustrate the threshold voltage fluctuations related reliability problems that have been aggravated by trap positions near the source at the interface compared to conventional 45 nm MOSFET.
ContributorsAshraf, Nabil Shovon (Author) / Vasileska, Dragica (Thesis advisor) / Schroder, Dieter (Committee member) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
150217-Thumbnail Image.png
Description
The past two decades have been monumental in the advancement of microchips designed for a diverse range of medical applications and bio-analysis. Owing to the remarkable progress in micro-fabrication technology, complex chemical and electro-mechanical features can now be integrated into chip-scale devices for use in biosensing and physiological measurements. Some

The past two decades have been monumental in the advancement of microchips designed for a diverse range of medical applications and bio-analysis. Owing to the remarkable progress in micro-fabrication technology, complex chemical and electro-mechanical features can now be integrated into chip-scale devices for use in biosensing and physiological measurements. Some of these devices have made enormous contributions in the study of complex biochemical processes occurring at the molecular and cellular levels while others overcame the challenges of replicating various functions of human organs as implant systems. This thesis presents test data and analysis of two such systems. First, an ISFET based pH sensor is characterized for its performance in a continuous pH monitoring application. Many of the basic properties of ISFETs including I-V characteristics, pH sensitivity and more importantly, its long term drift behavior have been investigated. A new theory based on frequent switching of electric field across the gate oxide to decrease the rate of current drift has been successfully implemented with the help of an automated data acquisition and switching system. The system was further tested for a range of duty cycles in order to accurately determine the minimum length of time required to fully reset the drift. Second, a microfluidic based vestibular implant system was tested for its underlying characteristics as a light sensor. A computer controlled tilt platform was then implemented to further test its sensitivity to inclinations and thus it‟s more important role as a tilt sensor. The sensor operates through means of optoelectronics and relies on the signals generated from photodiode arrays as a result of light being incident on them. ISFET results show a significant drop in the overall drift and good linear characteristics. The drift was seen to reset at less than an hour. The photodiodes show ideal I-V comparison between photoconductive and photovoltaic modes of operation with maximum responsivity at 400nm and a shunt resistance of 394 MΩ. Additionally, post-processing of the tilt sensor to incorporate the sensing fluids is outlined. Based on several test and fabrication results, a possible method of sealing the open cavity of the chip using a UV curable epoxy has been discussed.
ContributorsMamun, Samiha (Author) / Christen, Jennifer Blain (Thesis advisor) / Goryll, Michael (Committee member) / Yu, Hongyu (Committee member) / Arizona State University (Publisher)
Created2011