This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students. 

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This thesis explores the possibility of fabricating superconducting tunnel junctions (STJ) using double angle evaporation using an E-beam system. The traditional method of making STJs use a shadow mask to deposit two films requires the breaking of the vacuum of the main chamber. This technique has given bad results and

This thesis explores the possibility of fabricating superconducting tunnel junctions (STJ) using double angle evaporation using an E-beam system. The traditional method of making STJs use a shadow mask to deposit two films requires the breaking of the vacuum of the main chamber. This technique has given bad results and proven to be a tedious process. To improve on this technique, the E-beam system was modified by adding a load lock and transfer line to perform the multi-angle deposition and in situ oxidation in the load lock without breaking the vacuum of the main chamber. Bilayer photolithography process was used to prepare a pattern for double angle deposition for the STJ. The overlap length could be easily controlled by varying the deposition angles. The low-temperature resistivity measurement and scanning electron microscope (SEM) characterization showed that the deposited films were good. However, I-V measurement for tunnel junction did not give expected results for the quality of the fabricated STJs. The main objective of modifying the E-beam system for multiple angle deposition was achieved. It can be used for any application that requires angular deposition. The motivation for the project was to set up a system that can fabricate a device that can be used as a phonon spectrometer for phononic crystals. Future work will include improving the quality of the STJ and fabricating an STJs on both sides of a silicon substrate using a 4-angle deposition.
ContributorsRana, Ashish (Author) / Wang, Robert Y (Thesis advisor) / Newman, Nathan (Committee member) / Wang, Liping (Committee member) / Arizona State University (Publisher)
Created2019
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Description
The use of nanoparticle-in-matrix composites is a common motif among a broad range of nanoscience applications and is of particular interest to the thermal sciences community. To explore this morphological theme, crystalline inorganic composites were synthesized by mixing colloidal CdSe nanocrystals and In2Se3 metal chalcogenide complex (MCC) precursor in hydrazine

The use of nanoparticle-in-matrix composites is a common motif among a broad range of nanoscience applications and is of particular interest to the thermal sciences community. To explore this morphological theme, crystalline inorganic composites were synthesized by mixing colloidal CdSe nanocrystals and In2Se3 metal chalcogenide complex (MCC) precursor in hydrazine solvent and then thermally transform the MCC precursor into a crystalline In2Se3 matrix. The volume fraction of CdSe nanocrystals was varied from 0 to ~100% .Rich structural and chemical interactions between the CdSe nanocrystals and the In2Se3 matrix were observed. The average thermal conductivities of the 100% In2Se3 and ~100% CdSe composites are 0.32 and 0.53 W/m-K, respectively, which are remarkably low for inorganic crystalline materials. With the exception of the ~100% CdSe samples, the thermal conductivities of these nanocomposites are insensitive to CdSe volume fraction.This insensitivity is attributed to competing effects rise from structural morphology changes during composite formation.

Next, thermoelectric properties of metal chalcogenide thin films deposited from precursors using thiol-amine solvent mixtures were first reported. Cu2-xSeyS1-y and Ag-doped Cu2-xSeyS1-y thin films were synthesized, and the interrelationship between structure, composition, and room temperature thermoelectric properties was studied. The precursor annealing temperature affects the metal:chalcogen ratio, and leads to charge carrier concentration changes that affect Seebeck coefficient and electrical conductivity. Incorporating Ag into the Cu2-xSeyS1-y film leads to appreciable improvements in thermoelectric performance. Overall, the room temperature thermoelectric properties of these solution-processed materials are comparable to measurements on Cu2-xSe alloys made via conventional thermoelectric material processing methods.

Finally, a new route to make soluble metal chalcogenide precursors by reacting organic dichalcogenides with metal in different solvents was reported. By this method, SnSe, PbSe, SnTe and PbSexTe1-x precursors were successfully synthesized, and phase-pure and impurity-free metal chalcogenides were recovered after precursor decomposition. Compared to the hydrazine and diamine-dithiol route, the new approach uses safe solvent, and avoids introducing unwanted sulfur into the precursor. SnSe and PbSexTe1-x thin films, both of which are interesting thermoelectric materials, were also successfully made by solution deposition. The thermoelectric property measurements on those thin films show a great potential for future improvements.
ContributorsMa, Yuanyu (Author) / Wang, Robert (Thesis advisor) / Newman, Nathan (Committee member) / Wang, Liping (Committee member) / Hildreth, Owen (Committee member) / Arizona State University (Publisher)
Created2016