Theses and Dissertations
This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students.
Displaying 1 - 10 of 90
Description
Microelectronic industry is continuously moving in a trend requiring smaller and smaller devices and reduced form factors with time, resulting in new challenges. Reduction in device and interconnect solder bump sizes has led to increased current density in these small solders. Higher level of electromigration occurring due to increased current density is of great concern affecting the reliability of the entire microelectronics systems. This paper reviews electromigration in Pb- free solders, focusing specifically on Sn0.7wt.% Cu solder joints. Effect of texture, grain orientation, and grain-boundary misorientation angle on electromigration and intermetallic compound (IMC) formation is studied through EBSD analysis performed on actual C4 bumps.
ContributorsLara, Leticia (Author) / Tasooji, Amaneh (Thesis advisor) / Lee, Kyuoh (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2013
Description
The rapid advancement of wireless technology has instigated the broad deployment of wireless networks. Different types of networks have been developed, including wireless sensor networks, mobile ad hoc networks, wireless local area networks, and cellular networks. These networks have different structures and applications, and require different control algorithms. The focus of this thesis is to design scheduling and power control algorithms in wireless networks, and analyze their performances. In this thesis, we first study the multicast capacity of wireless ad hoc networks. Gupta and Kumar studied the scaling law of the unicast capacity of wireless ad hoc networks. They derived the order of the unicast throughput, as the number of nodes in the network goes to infinity. In our work, we characterize the scaling of the multicast capacity of large-scale MANETs under a delay constraint D. We first derive an upper bound on the multicast throughput, and then propose a lower bound on the multicast capacity by proposing a joint coding-scheduling algorithm that achieves a throughput within logarithmic factor of the upper bound. We then study the power control problem in ad-hoc wireless networks. We propose a distributed power control algorithm based on the Gibbs sampler, and prove that the algorithm is throughput optimal. Finally, we consider the scheduling algorithm in collocated wireless networks with flow-level dynamics. Specifically, we study the delay performance of workload-based scheduling algorithm with SRPT as a tie-breaking rule. We demonstrate the superior flow-level delay performance of the proposed algorithm using simulations.
ContributorsZhou, Shan (Author) / Ying, Lei (Thesis advisor) / Zhang, Yanchao (Committee member) / Zhang, Junshan (Committee member) / Xue, Guoliang (Committee member) / Arizona State University (Publisher)
Created2013
Description
Rapid processing and reduced end-of-range diffusion effects demonstrate that susceptor-assisted microwave annealing is an efficient processing alternative for electrically activating dopants and removing ion-implantation damage in ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Raman spectroscopy and ion channeling analysis monitor the extent of ion implantation damage and recrystallization. The presence of damage and defects in ion implanted silicon, and the reduction of the defects as a result of annealing, is observed by Rutherford backscattering spectrometry, moreover, the boron implanted silicon is further investigated by cross-section transmission electron microscopy. When annealing B+ implanted silicon, the dissolution of small extended defects and growth of large extended defects result in reduced crystalline quality that hinders the electrical activation process. Compared to B+ implanted silicon, phosphorus implanted samples experience more effective activation and achieve better crystalline quality. Comparison of end-of-range dopants diffusion resulting from microwave annealing and rapid thermal annealing (RTA) is done using secondary ion mass spectroscopy. Results from microwave annealed P+ implanted samples show that almost no diffusion occurs during time periods required for complete dopant activation and silicon recrystallization. The relative contributions to heating of the sample, by a SiC susceptor, and by Si self-heating in the microwave anneal, were also investigated. At first 20s, the main contributor to the sample's temperature rise is Si self-heating by microwave absorption.
ContributorsZhao, Zhao (Author) / Alford, Terry Lynn (Thesis advisor) / Theodore, David (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2013
Description
This thesis work mainly examined the stability and reliability issues of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors under bias-illumination stress. Amorphous hydrogenated silicon has been the dominating material used in thin film transistors as a channel layer. However with the advent of modern high performance display technologies, it is required to have devices with better current carrying capability and better reproducibility. This brings the idea of new material for channel layer of these devices. Researchers have tried poly silicon materials, organic materials and amorphous mixed oxide materials as a replacement to conventional amorphous silicon layer. Due to its low price and easy manufacturing process, amorphous mixed oxide thin film transistors have become a viable option to replace the conventional ones in order to achieve high performance display circuits. But with new materials emerging, comes the challenge of reliability and stability issues associated with it. Performance measurement under bias stress and bias-illumination stress have been reported previously. This work proposes novel post processing low temperature long time annealing in optimum ambient in order to annihilate or reduce the defects and vacancies associated with amorphous material which lead to the instability or even the failure of the devices. Thin film transistors of a-IGZO has been tested for standalone illumination stress and bias-illumination stress before and after annealing. HP 4155B semiconductor parameter analyzer has been used to stress the devices and measure the output characteristics and transfer characteristics of the devices. Extra attention has been given about the effect of forming gas annealing on a-IGZO thin film. a-IGZO thin film deposited on silicon substrate has been tested for resistivity, mobility and carrier concentration before and after annealing in various ambient. Elastic Recoil Detection has been performed on the films to measure the amount of hydrogen atoms present in the film. Moreover, the circuit parameters of the thin film transistors has been extracted to verify the physical phenomenon responsible for the instability and failure of the devices. Parameters like channel resistance, carrier mobility, power factor has been extracted and variation of these parameters has been observed before and after the stress.
ContributorsRuhul Hasin, Muhammad (Author) / Alford, Terry L. (Thesis advisor) / Krause, Stephen (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2013
Description
III-Nitride nanostructures have been an active area of research recently due to their ability to tune their optoelectronic properties. Thus far work has been done on InGaN quantum dots, nanowires, nanopillars, amongst other structures, but this research reports the creation of a new type of InGaN nanostructure, nanorings. Hexagonal InGaN nanorings were formed using Metal Organic Chemical Vapor Deposition through droplet epitaxy. The nanorings were thoroughly analyzed using x-ray diffraction, photoluminescence, electron microscopy, electron diffraction, and atomic force microscopy. Nanorings with high indium incorporation were achieved with indium content up to 50% that was then controlled using the growth time, temperature, In/Ga ratio and III/N ratio. The analysis showed that the nanoring shape is able to incorporate more indium than other nanostructures, due to the relaxing mechanism involved in the formation of the nanoring. The ideal conditions were determined to be growth of 30 second droplets with a growth time of 1 minute 30 seconds at 770 C to achieve the most well developed rings with the highest indium concentration.
ContributorsZaidi, Zohair (Author) / Mahajan, Subhash (Thesis advisor) / O'Connell, Michael J (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2012
Description
Zinc oxide (ZnO) has attracted much interest during last decades as a functional material. Furthermore, ZnO is a potential material for transparent conducting oxide material competing with indium tin oxide (ITO), graphene, and carbon nanotube film. It has been known as a conductive material when doped with elements such as indium, gallium and aluminum. The solubility of those dopant elements in ZnO is still debatable; but, it is necessary to find alternative conducting materials when their form is film or nanostructure for display devices. This is a consequence of the ever increasing price of indium. In addition, a new generation solar cell (nanostructured or hybrid photovoltaics) requires compatible materials which are capable of free standing on substrates without seed or buffer layers and have the ability introduce electrons or holes pathway without blocking towards electrodes. The nanostructures for solar cells using inorganic materials such as silicon (Si), titanium oxide (TiO2), and ZnO have been an interesting topic for research in solar cell community in order to overcome the limitation of efficiency for organic solar cells. This dissertation is a study of the rational solution-based synthesis of 1-dimentional ZnO nanomaterial and its solar cell applications. These results have implications in cost effective and uniform nanomanufacturing for the next generation solar cells application by controlling growth condition and by doping transition metal element in solution.
ContributorsChoi, Hyung Woo (Author) / Alford, Terry L. (Thesis advisor) / Krause, Stephen (Committee member) / Theodore, N. David (Committee member) / Arizona State University (Publisher)
Created2012
Description
The cyber-physical systems (CPS) are emerging as the underpinning technology for major industries in the 21-th century. This dissertation is focused on two fundamental issues in cyber-physical systems: network interdependence and information dynamics. It consists of the following two main thrusts. The first thrust is targeted at understanding the impact of network interdependence. It is shown that a cyber-physical system built upon multiple interdependent networks are more vulnerable to attacks since node failures in one network may result in failures in the other network, causing a cascade of failures that would potentially lead to the collapse of the entire infrastructure. There is thus a need to develop a new network science for modeling and quantifying cascading failures in multiple interdependent networks, and to develop network management algorithms that improve network robustness and ensure overall network reliability against cascading failures. To enhance the system robustness, a "regular" allocation strategy is proposed that yields better resistance against cascading failures compared to all possible existing strategies. Furthermore, in view of the load redistribution feature in many physical infrastructure networks, e.g., power grids, a CPS model is developed where the threshold model and the giant connected component model are used to capture the node failures in the physical infrastructure network and the cyber network, respectively. The second thrust is centered around the information dynamics in the CPS. One speculation is that the interconnections over multiple networks can facilitate information diffusion since information propagation in one network can trigger further spread in the other network. With this insight, a theoretical framework is developed to analyze information epidemic across multiple interconnecting networks. It is shown that the conjoining among networks can dramatically speed up message diffusion. Along a different avenue, many cyber-physical systems rely on wireless networks which offer platforms for information exchanges. To optimize the QoS of wireless networks, there is a need to develop a high-throughput and low-complexity scheduling algorithm to control link dynamics. To that end, distributed link scheduling algorithms are explored for multi-hop MIMO networks and two CSMA algorithms under the continuous-time model and the discrete-time model are devised, respectively.
ContributorsQian, Dajun (Author) / Zhang, Junshan (Thesis advisor) / Ying, Lei (Committee member) / Zhang, Yanchao (Committee member) / Cochran, Douglas (Committee member) / Arizona State University (Publisher)
Created2012
Description
Ball Grid Array (BGA) using lead-free or lead-rich solder materials are widely used as Second Level Interconnects (SLI) in mounting packaged components to the printed circuit board (PCB). The reliability of these solder joints is of significant importance to the performance of microelectronics components and systems. Product design/form-factor, solder material, manufacturing process, use condition, as well as, the inherent variabilities present in the system, greatly influence product reliability. Accurate reliability analysis requires an integrated approach to concurrently account for all these factors and their synergistic effects. Such an integrated and robust methodology can be used in design and development of new and advanced microelectronics systems and can provide significant improvement in cycle-time, cost, and reliability. IMPRPK approach is based on a probabilistic methodology, focusing on three major tasks of (1) Characterization of BGA solder joints to identify failure mechanisms and obtain statistical data, (2) Finite Element analysis (FEM) to predict system response needed for life prediction, and (3) development of a probabilistic methodology to predict the reliability, as well as, the sensitivity of the system to various parameters and the variabilities. These tasks and the predictive capabilities of IMPRPK in microelectronic reliability analysis are discussed.
ContributorsFallah-Adl, Ali (Author) / Tasooji, Amaneh (Thesis advisor) / Krause, Stephen (Committee member) / Alford, Terry (Committee member) / Jiang, Hanqing (Committee member) / Mahajan, Ravi (Committee member) / Arizona State University (Publisher)
Created2013
Description
The purpose of this paper is to introduce a new method of dividing wireless communication (such as the 802.11a/b/g
and cellular UMTS MAC protocols) across multiple unreliable communication links (such as Ethernet). The purpose is to introduce the appropriate hardware, software, and system architecture required to provide the basis for a wireless system (using a 802.11a/b/g
and cellular protocols as a model) that can scale to support thousands of users simultaneously (say in a large office building, super chain store, etc.) or in a small, but very dense communication RF region. Elements of communication between a base station and a Mobile Station will be analyzed statistically to demonstrate higher throughput, fewer collisions and lower bit error rates (BER) with the given bandwidth defined by the 802.11n wireless specification (use of MIMO channels will be evaluated). A new network nodal paradigm will be presented. Alternative link layer communication techniques will be recommended and analyzed for the affect on mobile devices. The analysis will describe how the algorithms used by state machines implemented on Mobile Stations and Wi-Fi client devices will be influenced by new base station transmission behavior. New hardware design techniques that can be used to optimize this architecture as well as hardware design principles in regard to the minimal hardware functional blocks required to support such a system design will be described. Hardware design and verification simulation techniques to prove the hardware design will accommodate an acceptable level of performance to meet the strict timing as it relates to this new system architecture.
and cellular UMTS MAC protocols) across multiple unreliable communication links (such as Ethernet). The purpose is to introduce the appropriate hardware, software, and system architecture required to provide the basis for a wireless system (using a 802.11a/b/g
and cellular protocols as a model) that can scale to support thousands of users simultaneously (say in a large office building, super chain store, etc.) or in a small, but very dense communication RF region. Elements of communication between a base station and a Mobile Station will be analyzed statistically to demonstrate higher throughput, fewer collisions and lower bit error rates (BER) with the given bandwidth defined by the 802.11n wireless specification (use of MIMO channels will be evaluated). A new network nodal paradigm will be presented. Alternative link layer communication techniques will be recommended and analyzed for the affect on mobile devices. The analysis will describe how the algorithms used by state machines implemented on Mobile Stations and Wi-Fi client devices will be influenced by new base station transmission behavior. New hardware design techniques that can be used to optimize this architecture as well as hardware design principles in regard to the minimal hardware functional blocks required to support such a system design will be described. Hardware design and verification simulation techniques to prove the hardware design will accommodate an acceptable level of performance to meet the strict timing as it relates to this new system architecture.
ContributorsJames, Frank (Author) / Reisslein, Martin (Thesis advisor) / Ying, Lei (Committee member) / Zhang, Yanchao (Committee member) / Arizona State University (Publisher)
Created2014
Description
Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium arsenide (GaAs) was required in the development of high-powered radio frequency (RF) compound semiconductor devices operating at higher current densities and elevated temperatures. Gold-based metallization was implemented on GaAs devices because it uniquely forms a very low resistance ohmic contact and gold interconnects have superior electrical and thermal conductivity properties. Gold (Au) was also believed to have improved resistance to electromigration due to its higher melting temperature, yet electromigration reliability data on passivated Au interconnects is scarce and inadequate in the literature. Therefore, the objective of this research was to characterize the electromigration lifetimes of passivated Au interconnects under precisely controlled stress conditions with statistically relevant quantities to obtain accurate model parameters essential for extrapolation to normal operational conditions. This research objective was accomplished through measurement of electromigration lifetimes of large quantities of passivated electroplated Au interconnects utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with a current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C avoided electrical overstress and severe Joule-heated temperature gradients. Temperature coefficients of resistance (TCRs) were measured to determine accurate Joule-heated Au interconnect film temperatures. A failure criterion of 50% resistance degradation was selected to prevent thermal runaway and catastrophic metal ruptures that are problematic of open circuit failure tests. Test structure design was optimized to reduce resistance variation and facilitate failure analysis. Characterization of the Au microstructure yielded a median grain size of 0.91 ìm. All Au lifetime distributions followed log-normal distributions and Black's model was found to be applicable. An activation energy of 0.80 ± 0.05 eV was measured from constant current electromigration tests at multiple temperatures. A current density exponent of 1.91 was extracted from multiple current densities at a constant temperature. Electromigration-induced void morphology along with these model parameters indicated grain boundary diffusion is dominant and the void nucleation mechanism controlled the failure time.
ContributorsKilgore, Stephen (Author) / Adams, James (Thesis advisor) / Schroder, Dieter (Thesis advisor) / Krause, Stephen (Committee member) / Gaw, Craig (Committee member) / Arizona State University (Publisher)
Created2013