This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students. 

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Description
Electromigration, the net atomic diffusion associated with the momentum transfer from electrons moving through a material, is a major cause of device and component failure in microelectronics. The deleterious effects from electromigration rise with increased current density, a parameter that will only continue to increase as our electronic devices get

Electromigration, the net atomic diffusion associated with the momentum transfer from electrons moving through a material, is a major cause of device and component failure in microelectronics. The deleterious effects from electromigration rise with increased current density, a parameter that will only continue to increase as our electronic devices get smaller and more compact. Understanding the dynamic diffusional pathways and mechanisms of these electromigration-induced and propagated defects can further our attempts at mitigating these failure modes. This dissertation provides insight into the relationships between these defects and parameters of electric field strength, grain boundary misorientation, grain size, void size, eigenstrain, varied atomic mobilities, and microstructure.First, an existing phase-field model was modified to investigate the various defect modes associated with electromigration in an equiaxed non-columnar microstructure. Of specific interest was the effect of grain boundary misalignment with respect to current flow and the mechanisms responsible for the changes in defect kinetics. Grain size, magnitude of externally applied electric field, and the utilization of locally distinct atomic mobilities were other parameters investigated. Networks of randomly distributed grains, a common microstructure of interconnects, were simulated in both 2- and 3-dimensions displaying the effects of 3-D capillarity on diffusional dynamics. Also, a numerical model was developed to study the effect of electromigration on void migration and coalescence. Void migration rates were found to be slowed from compressive forces and the nature of the deformation concurrent with migration was examined through the lens of chemical potential. Void migration was also validated with previously reported theoretical explanations. Void coalescence and void budding were investigated and found to be dependent on the magnitude of interfacial energy and electric field strength. A grasp on the mechanistic pathways of electromigration-induced defect evolution is imperative to the development of reliable electronics, especially as electronic devices continue to miniaturize. This dissertation displays a working understanding of the mechanistic pathways interconnects can fail due to electromigration, as well as provide direction for future research and understanding.
ContributorsFarmer, William McHann (Author) / Ankit, Kumar (Thesis advisor) / Chawla, Nikhilesh (Committee member) / Jiao, Yang (Committee member) / McCue, Ian (Committee member) / Arizona State University (Publisher)
Created2022
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Description
With the abundance of increasingly large datasets, the ability to predict the phase of high-entropy alloys (HEAs) based solely on elemental composition could become a reliable tool for the discovery of new HEAs. However, as the amount of data expands so does the computational time and resources required to train

With the abundance of increasingly large datasets, the ability to predict the phase of high-entropy alloys (HEAs) based solely on elemental composition could become a reliable tool for the discovery of new HEAs. However, as the amount of data expands so does the computational time and resources required to train predictive classical machine learning models. Quantum computers, which use quantum bits (qubits), could be the solution to overcoming these demands. Their ability to use quantum superposition and interference to perform calculations could be the key to handling large amounts of data. In this work, a hybrid quantum-classical machine learning algorithm is implemented on both quantum simulators and quantum processors to perform the supervised machine learning task. Their feasibility as a future tool for HEA discovery is evaluated based on the algorithm’s performance. An artificial neural network (ANN), run by classical computers, is also trained on the same data for performance comparison. The accuracy of the quantum-classical model was found to be comparable to the accuracy achieved by the classical ANN with a slight decrease in accuracy when ran on quantum hardware due to qubit susceptibility to decoherence. Future developments in the applied quantum machine learning method are discussed.
ContributorsBrown, Payden Lance (Author) / Zhuang, Houlong (Thesis advisor) / Ankit, Kumar (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2022
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Description
Phase-field (PF) models are one of the most powerful tools to simulate microstructural evolution in metallic materials, polymers, and ceramics. However, existing PF approaches rely on rigorous mathematical model development, sophisticated numerical schemes, and high-performance computing for accuracy. Although recently developed surrogate microstructure models employ deep-learning techniques and reconstruction of

Phase-field (PF) models are one of the most powerful tools to simulate microstructural evolution in metallic materials, polymers, and ceramics. However, existing PF approaches rely on rigorous mathematical model development, sophisticated numerical schemes, and high-performance computing for accuracy. Although recently developed surrogate microstructure models employ deep-learning techniques and reconstruction of microstructures from lower-dimensional data, their accuracy is fairly limited as spatio-temporal information is lost in the pursuit of dimensional reduction. Given these limitations, a novel data-driven emulator (DDE) for extrapolation prediction of microstructural evolution is presented, which combines an image-based convolutional and recurrent neural network (CRNN) with tensor decomposition, while leveraging previously obtained PF datasets for training. To assess the robustness of DDE, the emulation sequence and the scaling behavior with phase-field simulations for several noisy initial states are compared. In conclusion, the effectiveness of the microstructure emulation technique is explored in the context of accelerating runtime, along with an emphasis on its trade-off with accuracy.Meanwhile, an interpolation DDE has also been tested, which is based on obtaining a low-dimensional representation of the microstructures via tensor decomposition and subsequently predicting the microstructure evolution in the low-dimensional space using Gaussian process regression (GPR). Once the microstructure predictions are obtained in the low-dimensional space, a hybrid input-output phase retrieval algorithm will be employed to reconstruct the microstructures. As proof of concept, the results on microstructure prediction for spinodal decomposition are presented, although the method itself is agnostic of the material parameters. Results show that GPR-based DDE model are able to predict microstructure evolution sequences that closely resemble the true microstructures (average normalized mean square of 6.78 × 10−7) at time scales half of that employed in obtaining training data. This data-driven microstructure emulator opens new avenues to predict the microstructural evolution by leveraging phase-field simulations and physical experimentation where the time resolution is often quite large due to limited resources and physical constraints, such as the phase coarsening experiments previously performed in microgravity. Future work will also be discussed and demonstrate the intended utilization of these two approaches for 3D microstructure prediction through their combined application.
ContributorsWu, Peichen (Author) / Ankit, Kumar (Thesis advisor) / Iquebal, Ashif (Committee member) / Jiao, Yang (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2024