Theses and Dissertations
This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students.
Displaying 91 - 92 of 92
Description
Research on self-regulatory variables like mindfulness and effortful control proposes strong links with physical and mental health outcomes across the lifespan, from childhood and adolescence to adulthood and old age. One pathway by which self-regulation may confer health benefits is through individual differences in reports of and emotional responses to daily negative and positive events. Mindfulness is broadly defined as non-reactivity to inner experiences, while effortful control is broadly defined as attentional and behavioral regulation. Mindfulness and effortful control have both been conceptualized to exert their beneficial effects on development through their influence on exposure/engagement and emotional reactivity/responsiveness to both negative and positive events, yet few empirical studies have tested this claim using daily-diary designs, a research methodology that permits for examining this process. With a sample of community-dwelling adults (n=191), this thesis examined whether dispositional mindfulness (i.e., non-reactivity of inner experience) and effortful control (i.e., attention and behavioral regulation) modulate reports of and affective reactivity/responsiveness to daily negative and positive events across 30 days. Results showed that mindfulness and effortful control were each associated with reduced exposure to daily stressors but not positive events. They also showed that mindfulness and effortful control, respectively, predicted smaller decreases in negative affect and smaller increases in positive affect on days that positive events occurred. Overall, these findings offer insight into how these self-regulatory factors operate in the context of middle-aged adults’ everyday life.
ContributorsCastro, Saul (Author) / Infurna, Frank (Thesis advisor) / Doane, Leah (Committee member) / Davis, Mary (Committee member) / Arizona State University (Publisher)
Created2018
Description
In this dissertation, I investigate the electronic properties of two important silicon(Si)-based heterojunctions 1) hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) which has already been commercialized in Heterojunction with Intrinsic Thin-layer (HIT) cells and 2) gallium phosphide/silicon (GaP/Si) which has been suggested to be a good candidate for replacing a-Si:H/c-Si in HIT cells in order to boost the HIT cell’s efficiency.
In the first part, the defect states of amorphous silicon (a-Si) and a-Si:H material are studied using density functional theory (DFT). I first employ simulated annealing using molecular dynamics (MD) to create stable configurations of a-Si:H, and then analyze the atomic and electronic structure to investigate which structural defects interact with H, and how the electronic structure changes with H addition. I find that H atoms decrease the density of mid-gap states and increase the band gap of a-Si by binding to Si atoms with strained bonds. My results also indicate that Si atoms with strained bonds creates high-localized orbitals in the mobility gap of a-Si, and the binding of H atoms to them can dramatically decrease their degree of localization.
In the second part, I explore the effect of the H binding configuration on the electronic properties of a-Si:H/c-Si heterostructure using density functional theory studies of models of the interface between a-Si:H and c-Si. The electronic properties from DFT show that depending on the energy difference between configurations, the electronic properties are sensitive to the H binding configurations.
In the last part, I examine the electronic structure of GaP/Si(001) heterojunctions and the effect of hydrogen H passivation at the interface in comparison to interface mixing, through DFT calculations. My calculations show that due to the heterovalent mismatch nature of the GaP/Si interface, there is a high density of localized states at the abrupt GaP/Si interface due to the excess charge associated with heterovalent bonding, as reported elsewhere. I find that the addition of H leads to additional bonding at the interface which mitigates the charge imbalance, and greatly reduces the density of localized states, leading to a nearly ideal heterojunction.
In the first part, the defect states of amorphous silicon (a-Si) and a-Si:H material are studied using density functional theory (DFT). I first employ simulated annealing using molecular dynamics (MD) to create stable configurations of a-Si:H, and then analyze the atomic and electronic structure to investigate which structural defects interact with H, and how the electronic structure changes with H addition. I find that H atoms decrease the density of mid-gap states and increase the band gap of a-Si by binding to Si atoms with strained bonds. My results also indicate that Si atoms with strained bonds creates high-localized orbitals in the mobility gap of a-Si, and the binding of H atoms to them can dramatically decrease their degree of localization.
In the second part, I explore the effect of the H binding configuration on the electronic properties of a-Si:H/c-Si heterostructure using density functional theory studies of models of the interface between a-Si:H and c-Si. The electronic properties from DFT show that depending on the energy difference between configurations, the electronic properties are sensitive to the H binding configurations.
In the last part, I examine the electronic structure of GaP/Si(001) heterojunctions and the effect of hydrogen H passivation at the interface in comparison to interface mixing, through DFT calculations. My calculations show that due to the heterovalent mismatch nature of the GaP/Si interface, there is a high density of localized states at the abrupt GaP/Si interface due to the excess charge associated with heterovalent bonding, as reported elsewhere. I find that the addition of H leads to additional bonding at the interface which mitigates the charge imbalance, and greatly reduces the density of localized states, leading to a nearly ideal heterojunction.
ContributorsVatan Meidanshahi, Reza (Author) / Goodnick, Stephen Marshall (Thesis advisor) / Vasileska, Dragica (Committee member) / Bowden, Stuart (Committee member) / Honsberg, Christiana (Committee member) / Arizona State University (Publisher)
Created2019