Theses and Dissertations
This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students.
Displaying 21 - 30 of 92
Description
In rehabilitation settings, activity limitation can be a significant barrier to recovery. This study sought to examine the effects of state and trait level benefit finding, positive affect, and catastrophizing on activity limitation among individuals with a physician-confirmed diagnosis of either Osteoarthritis (OA), Fibromyalgia (FM), or a dual diagnosis of OA/FM. Participants (106 OA, 53 FM, and 101 OA/FM) who had no diagnosed autoimmune disorder, a pain rating above 20 on a 0-100 scale, and no involvement in litigation regarding their condition were recruited in the Phoenix metropolitan area for inclusion in the current study. After initial questionnaires were completed, participants were trained to complete daily diaries on a laptop computer and instructed to do so a half an hour before bed each night for 30 days. In each diary, participants rated their average daily pain, benefit finding, positive affect, catastrophizing, and activity limitation. A single item, "I thought about some of the good things that have come from living with my pain" was used to examine the broader construct of benefit finding. It was hypothesized that state and trait level benefit finding would have a direct relation with activity limitation and a partially mediated relationship, through positive affect. Multilevel modeling with SAS PROC MIXED revealed that benefit finding was not directly related to activity limitation. Increases in benefit finding were associated, however, with decreases in activity limitation through a significant mediated relationship with positive affect. Individuals who benefit find had a higher level of positive affect which was associated with decreased activity limitation. A suppression effect involving pain and benefit finding at the trait level was also found. Pain appeared to increase the predictive validity of the relation of benefit finding to activity limitation. These findings have important implications for rehabilitation psychologists and should embolden clinicians to encourage patients to increase positive affect by employing active approach-oriented coping strategies like benefit finding to reduce activity limitation.
ContributorsKinderdietz, Jeffrey Scott (Author) / Zautra, Alex (Thesis advisor) / Davis, Mary (Committee member) / Barrera, Manuel (Committee member) / Okun, Morris (Committee member) / Arizona State University (Publisher)
Created2012
Towards high-efficiency thin-film solar cells: from theoretical analysis to experimental exploration
Description
GaAs single-junction solar cells have been studied extensively in recent years, and have reached over 28 % efficiency. Further improvement requires an optically thick but physically thin absorber to provide both large short-circuit current and high open-circuit voltage. By detailed simulation, it is concluded that ultra-thin GaAs cells with hundreds of nanometers thickness and reflective back scattering can potentially offer efficiencies greater than 30 %. The 300 nm GaAs solar cell with AlInP/Au reflective back scattering is carefully designed and demonstrates an efficiency of 19.1 %. The device performance is analyzed using the semi-analytical model with Phong distribution implemented to account for non-Lambertian scattering. A Phong exponent m of ~12, a non-radiative lifetime of 130 ns, and a specific series resistivity of 1.2 Ω·cm2 are determined.
Thin-film CdTe solar cells have also attracted lots of attention due to the continuous improvements in their device performance. To address the issue of the lower efficiency record compared to detailed-balance limit, the single-crystalline Cd(Zn)Te/MgCdTe double heterostructures (DH) grown on InSb (100) substrates by molecular beam epitaxy (MBE) are carefully studied. The Cd0.9946Zn0.0054Te alloy lattice-matched to InSb has been demonstrated with a carrier lifetime of 0.34 µs observed in a 3 µm thick Cd0.9946Zn0.0054Te/MgCdTe DH sample. The substantial improvement of lifetime is due to the reduction in misfit dislocation density. The recombination lifetime and interface recombination velocity (IRV) of CdTe/MgxCd1-xTe DHs are investigated. The IRV is found to be dependent on both the MgCdTe barrier height and width due to the thermionic emission and tunneling processes. A record-long carrier lifetime of 2.7 µs and a record-low IRV of close to zero have been confirmed experimentally.
The MgCdTe/Si tandem solar cell is proposed to address the issue of high manufacturing costs and poor performance of thin-film solar cells. The MBE grown MgxCd1-xTe/MgyCd1-yTe DHs have demonstrated the required bandgap energy of 1.7 eV, a carrier lifetime of 11 ns, and an effective IRV of (1.869 ± 0.007) × 103 cm/s. The large IRV is attributed to thermionic-emission induced interface recombination. These understandings can be applied to fabricating the high-efficiency low-cost MgCdTe/Si tandem solar cell.
Thin-film CdTe solar cells have also attracted lots of attention due to the continuous improvements in their device performance. To address the issue of the lower efficiency record compared to detailed-balance limit, the single-crystalline Cd(Zn)Te/MgCdTe double heterostructures (DH) grown on InSb (100) substrates by molecular beam epitaxy (MBE) are carefully studied. The Cd0.9946Zn0.0054Te alloy lattice-matched to InSb has been demonstrated with a carrier lifetime of 0.34 µs observed in a 3 µm thick Cd0.9946Zn0.0054Te/MgCdTe DH sample. The substantial improvement of lifetime is due to the reduction in misfit dislocation density. The recombination lifetime and interface recombination velocity (IRV) of CdTe/MgxCd1-xTe DHs are investigated. The IRV is found to be dependent on both the MgCdTe barrier height and width due to the thermionic emission and tunneling processes. A record-long carrier lifetime of 2.7 µs and a record-low IRV of close to zero have been confirmed experimentally.
The MgCdTe/Si tandem solar cell is proposed to address the issue of high manufacturing costs and poor performance of thin-film solar cells. The MBE grown MgxCd1-xTe/MgyCd1-yTe DHs have demonstrated the required bandgap energy of 1.7 eV, a carrier lifetime of 11 ns, and an effective IRV of (1.869 ± 0.007) × 103 cm/s. The large IRV is attributed to thermionic-emission induced interface recombination. These understandings can be applied to fabricating the high-efficiency low-cost MgCdTe/Si tandem solar cell.
ContributorsLiu, Shi (Author) / Zhang, Yong-Hang (Thesis advisor) / Johnson, Shane R (Committee member) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2015
Development of New Front Side Metallization Method of Aluminum Electroplating for Silicon Solar Cell
Description
In this thesis, the methods of aluminum electroplating in an ionic liquid for silicon solar cell front side metallization were studied. It focused on replacing the current silver screen printing with an alternative metallization technology using a low-cost Earth-abundant metal for mass production, due to the high cost and limited availability of silver. A conventional aluminum electroplating method was employed for silicon solar cells fabrication on both p-type and n-type substrates. The highest efficiency of 17.9% was achieved in the n-type solar cell with a rear junction, which is comparable to that of the same structure cell with screen printed silver electrodes from industrial production lines. It also showed better spiking resistant performance than the common structure p-type solar cell. Further efforts were put on the development of a novel light-induced plating of aluminum technique. The aluminum was deposited directly on a silicon substrate without the assistance of a conductive seed layer, thus simplified and reduced the process cost. The plated aluminum has good adhesion to the silicon surface with the resistivity as low as 4×10–6 -cm. A new demo tool was designed and set up for the light-induced plating experiment, aiming to utilize this technique in large-size solar cells fabrication and mass production. Besides the metallization methods, a comprehensive sensitivity analysis for the efficiency dispersion in the production of crystalline-Si solar cells was presented based on numerical simulations. Temperature variation in the diffusion furnace was the most significant cause of the efficiency dispersion. It was concluded that a narrow efficiency range of ±0.5% absolute is achievable if the emitter diffusion temperature is confined to a 13˚C window, while other cell parameters vary within their normal windows. Possible methods to minimize temperature variation in emitter diffusion were proposed.
ContributorsWang, Laidong (Author) / Tao, Meng (Thesis advisor) / Vasileska, Dragica (Committee member) / Kozicki, Michael (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2018
Description
High-k dielectrics have been employed in the metal-oxide semiconductor field effect transistors (MOSFETs) since 45 nm technology node. In this MOSFET industry, Moore’s law projects the feature size of MOSFET scales half within every 18 months. Such scaling down theory has not only led to the physical limit of manufacturing but also raised the reliability issues in MOSFETs. After the incorporation of HfO2 based high-k dielectrics, the stacked oxides based gate insulator is facing rather challenging reliability issues due to the vulnerable HfO2 layer, ultra-thin interfacial SiO2 layer, and even messy interface between SiO2 and HfO2. Bias temperature instabilities (BTI), hot channel electrons injections (HCI), stress-induced leakage current (SILC), and time dependent dielectric breakdown (TDDB) are the four most prominent reliability challenges impacting the lifetime of the chips under use.
In order to fully understand the origins that could potentially challenge the reliability of the MOSFETs the defects induced aging and breakdown of the high-k dielectrics have been profoundly investigated here. BTI aging has been investigated to be related to charging effects from the bulk oxide traps and generations of Si-H bonds related interface traps. CVS and RVS induced dielectric breakdown studies have been performed and investigated. The breakdown process is regarded to be related to oxygen vacancies generations triggered by hot hole injections from anode. Post breakdown conduction study in the RRAM devices have shown irreversible characteristics of the dielectrics, although the resistance could be switched into high resistance state.
In order to fully understand the origins that could potentially challenge the reliability of the MOSFETs the defects induced aging and breakdown of the high-k dielectrics have been profoundly investigated here. BTI aging has been investigated to be related to charging effects from the bulk oxide traps and generations of Si-H bonds related interface traps. CVS and RVS induced dielectric breakdown studies have been performed and investigated. The breakdown process is regarded to be related to oxygen vacancies generations triggered by hot hole injections from anode. Post breakdown conduction study in the RRAM devices have shown irreversible characteristics of the dielectrics, although the resistance could be switched into high resistance state.
ContributorsFang, Runchen (Author) / Barnaby, Hugh J (Thesis advisor) / Kozicki, Michael N (Thesis advisor) / Vasileska, Dragica (Committee member) / Thornton, Trevor J (Committee member) / Arizona State University (Publisher)
Created2018
Description
Wide bandgap (WBG) semiconductors GaN (3.4 eV), Ga2O3 (4.8 eV) and AlN (6.2 eV), have gained considerable interests for energy-efficient optoelectronic and electronic applications in solid-state lighting, photovoltaics, power conversion, and so on. They can offer unique device performance compared with traditional semiconductors such as Si. Efficient GaN based light-emitting diodes (LEDs) have increasingly displaced incandescent and fluorescent bulbs as the new major light sources for lighting and display. In addition, due to their large bandgap and high critical electrical field, WBG semiconductors are also ideal candidates for efficient power conversion.
In this dissertation, two types of devices are demonstrated: optoelectronic and electronic devices. Commercial polar c-plane LEDs suffer from reduced efficiency with increasing current densities, knowns as “efficiency droop”, while nonpolar/semipolar LEDs exhibit a very low efficiency droop. A modified ABC model with weak phase space filling effects is proposed to explain the low droop performance, providing insights for designing droop-free LEDs. The other emerging optoelectronics is nonpolar/semipolar III-nitride intersubband transition (ISBT) based photodetectors in terahertz and far infrared regime due to the large optical phonon energy and band offset, and the potential of room-temperature operation. ISBT properties are systematically studied for devices with different structures parameters.
In terms of electronic devices, vertical GaN p-n diodes and Schottky barrier diodes (SBDs) with high breakdown voltages are homoepitaxially grown on GaN bulk substrates with much reduced defect densities and improved device performance. The advantages of the vertical structure over the lateral structure are multifold: smaller chip area, larger current, less sensitivity to surface states, better scalability, and smaller current dispersion. Three methods are proposed to boost the device performances: thick buffer layer design, hydrogen-plasma based edge termination technique, and multiple drift layer design. In addition, newly emerged Ga2O3 and AlN power electronics may outperform GaN devices. Because of the highly anisotropic crystal structure of Ga2O3, anisotropic electrical properties have been observed in Ga2O3 electronics. The first 1-kV-class AlN SBDs are demonstrated on cost-effective sapphire substrates. Several future topics are also proposed including selective-area doping in GaN power devices, vertical AlN power devices, and (Al,Ga,In)2O3 materials and devices.
In this dissertation, two types of devices are demonstrated: optoelectronic and electronic devices. Commercial polar c-plane LEDs suffer from reduced efficiency with increasing current densities, knowns as “efficiency droop”, while nonpolar/semipolar LEDs exhibit a very low efficiency droop. A modified ABC model with weak phase space filling effects is proposed to explain the low droop performance, providing insights for designing droop-free LEDs. The other emerging optoelectronics is nonpolar/semipolar III-nitride intersubband transition (ISBT) based photodetectors in terahertz and far infrared regime due to the large optical phonon energy and band offset, and the potential of room-temperature operation. ISBT properties are systematically studied for devices with different structures parameters.
In terms of electronic devices, vertical GaN p-n diodes and Schottky barrier diodes (SBDs) with high breakdown voltages are homoepitaxially grown on GaN bulk substrates with much reduced defect densities and improved device performance. The advantages of the vertical structure over the lateral structure are multifold: smaller chip area, larger current, less sensitivity to surface states, better scalability, and smaller current dispersion. Three methods are proposed to boost the device performances: thick buffer layer design, hydrogen-plasma based edge termination technique, and multiple drift layer design. In addition, newly emerged Ga2O3 and AlN power electronics may outperform GaN devices. Because of the highly anisotropic crystal structure of Ga2O3, anisotropic electrical properties have been observed in Ga2O3 electronics. The first 1-kV-class AlN SBDs are demonstrated on cost-effective sapphire substrates. Several future topics are also proposed including selective-area doping in GaN power devices, vertical AlN power devices, and (Al,Ga,In)2O3 materials and devices.
ContributorsFu, Houqiang (Author) / Zhao, Yuji (Thesis advisor) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Yu, Hongbin (Committee member) / Wang, Liping (Committee member) / Arizona State University (Publisher)
Created2019
Description
Spousal loss is a common, significant life event that can negatively affect multiple facets of individual health and psychological adjustment. Social support is one factor that is shown to improve adjustment following spousal loss, but much less is known regarding which facet of social support is most predictive of positive adjustment outcomes following spousal loss. This study examined the course of changes in mental health and well-being following spousal loss and which facets of social support are associated with better outcomes following spousal loss. Latent growth curve modeling was applied to data from 265 widowed individuals, ages 65 and older, across four assessments (baseline, and 6-, 18-, and 48- months following spousal loss). I examined the following research questions: (1) adjustment following spousal loss will follow a trajectory of an increase in depressive symptoms and anxiety and decrease in well-being with a leveling-off over time, with between-person differences, and (2) emotional support and instrumental support given will lead to more positive adjustment outcomes over time. Depressive symptoms followed the hypothesized trajectory but anxiety and well-being showed relative stability before and after spousal loss. Instrumental support was the most beneficial facet of social support, such that receiving more instrumental support was associated with lower levels of depressive symptoms and anxiety 6-months following spousal loss. Giving more instrumental support led to an increase in well-being following spousal loss. Instrumental support given and received led to increases in well-being as a function of spousal loss. The discussion focuses on whether and how these findings can help to identify ways through which support and help can be given to individuals to improve adjustment to spousal loss and fully recover.
ContributorsSullivan, Colleen Elizabeth (Author) / Infurna, Frank (Thesis director) / Luthar, Suniya (Committee member) / Davis, Mary (Committee member) / Department of Psychology (Contributor) / School of International Letters and Cultures (Contributor) / Barrett, The Honors College (Contributor)
Created2017-12
Description
Effortful Control (EC) is a person's ability to self-regulate when presented with an environmental stimulus (Rothbart, et al., 2003). It has been well-established that high levels of EC are associated with multiple positive social and academic outcomes in adolescence (Spinrad et al., 2009). Research suggests that parents have a strong impact on numerous child outcomes, such as EC, through both genetic and environmental pathways. Past research has also examined how parents diagnosed with psychopathology contribute to maladaptive outcomes in their children, including poor regulation, through both genetic and environmental processes (Ellis, et al., 1997). However, less is known about the longitudinal effects of parent dysfunction on the child's environment and regulatory abilities and potential mediators of those effects. The current study tested the hypotheses that parent Alcohol Use Disorder (AUD) would specifically predict early adversity, biological mother conscientiousness, and child EC longitudinally and that early adversity and biological mother conscientiousness would predict child EC. Participants were from a longitudinal study of familial alcoholism (N = 195). Regression analyses indicated that parent AUD was not specifically associated with child EC or with biological mother conscientiousness. However, parent AUD was related to higher levels of early adversity. Additionally, biological mother conscientiousness was associated with higher levels of child EC and early adversity was associated with lower levels of child EC when controlling for earlier EC. Given these findings, future research should test mediation models in which parent AUD predicts child EC indirectly through early adversity.
ContributorsRuof, Ariana Kelsey (Author) / Chassin, Laurie (Thesis director) / Elam, Kit (Committee member) / Davis, Mary (Committee member) / Department of Psychology (Contributor) / Sanford School of Social and Family Dynamics (Contributor) / Barrett, The Honors College (Contributor)
Created2017-12
Description
The rates of anxiety, depression, and attempted suicide for transgender individuals are extremely elevated relative to the general population. Yet, little research has been conducted about the transgender population regarding social transition (an individual presenting as their authentic/true gender, one different than the gender they were assigned at birth, in the context of everyday life) and parental acceptance. Both of which have been shown to impact the mental health of transgender individuals. The purposes of this study were: (1) To characterize a sample of transgender adults on their age of awareness of their authentic gender identity and their age of social transition. (2) Examine whether age of social transition, (3) parental acceptance, and (4) the gap in time between age of awareness and age of social transition (awareness-transition gap) were related to mental health. (5) Examine whether parental acceptance was related to age of social transition or to awareness-transition gap. (6) Examine whether age of social transition or awareness-transition gap interact with parental acceptance as correlates of mental health. The sample consisted of 115 transgender adults, ages 18 to 64. Measures were separated into 7 subheadings: demographics, transgender
on-cisgender identity, age of awareness, age of social transition, primary caregiver acceptance, secondary caregiver acceptance, and mental health. Hypotheses were partially supported for age of social transition with mental health, parental acceptance with mental health, and awareness-transition gap with parental acceptance. This study investigated under studied concepts of social transition and parental acceptance that appear to have an effect on the mental health of transgender adults.
on-cisgender identity, age of awareness, age of social transition, primary caregiver acceptance, secondary caregiver acceptance, and mental health. Hypotheses were partially supported for age of social transition with mental health, parental acceptance with mental health, and awareness-transition gap with parental acceptance. This study investigated under studied concepts of social transition and parental acceptance that appear to have an effect on the mental health of transgender adults.
ContributorsRosenberg, Beth Ann (Author) / Gonzales, Nancy (Thesis director) / Saenz, Delia (Committee member) / Davis, Mary (Committee member) / Department of Psychology (Contributor) / Sanford School of Social and Family Dynamics (Contributor) / College of Public Service and Community Solutions (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
The goal of my study is to test the overarching hypothesis that art therapy is effective because it targets emotional dysregulation that often accompanies significant health stressors. By reducing the salience of illness-related stressors, art therapy may improve overall mood and recovery, particularly in patients with cancer. After consulting the primary literature and review papers to develop psychological and neural mechanisms at work in art therapy, I created a hypothetical experimental procedure to test these hypotheses to explain why art therapy is helpful to patients with chronic illness. Studies found that art therapy stimulates activity of multiple brain regions involved in memory retrieval and the arousal of emotions. I hypothesize that patients with chronic illness have a reduced capacity for emotion regulation, or difficulty recognizing, expressing or altering illness-related emotions (Gross & Barrett, 2011). Further I hypothesize that art therapy improves mood and therapeutic outcomes by acting on the emotion-processing regions of the limbic system, and thereby facilitating the healthy expression of emotion, emotional processing, and reappraisal. More mechanistically, I propose art therapy reduces the perception or salience of stressors by reducing amygdala activity leading to decreased activation of the hypothalamic-pituitary-adrenal (HPA) axis. The art therapy literature and my hypothesis about its mechanisms of action became the basis of my proposed study. To assess the effectiveness of art therapy in alleviating symptoms of chronic disease, I am specifically targeting patients with cancer who exhibit a lack of emotional regulation. Saliva is collected 3 times a week on the day of intervention: morning after waking, afternoon, and evening. Stress levels are tested using one-hour art therapy sessions over the course of 3 months. The Perceived Stress Scale (PSS) assesses an individual's perceived stress and feelings in past and present situations, for the control and intervention group. To measure improvement in overall mood, 10 one-hour art sessions are performed on patients over 10 weeks. A one-hour discussion analyzing the participants' artwork follows each art session. The Spielberger State-Trait Anxiety Inventory (STAI) assesses overall mood for the intervention and control groups. I created rationale and predictions based on the intended results of each experiment.
ContributorsAluri, Bineetha C. (Author) / Orchinik, Miles (Thesis director) / Davis, Mary (Committee member) / Essary, Alison (Committee member) / School of Life Sciences (Contributor) / School for the Science of Health Care Delivery (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
While previous research has investigated the influence parenting styles have on child behavior, there has not been consistent findings on how child behavior in return influences parenting. This study goes beyond the literature by examining bidirectional influences of combined dyad for emotional availability and early problem behaviors (composited across 12 and 30 months) predicting parental warmth, authoritarian parenting, internalizing, externalizing and ADHD symptoms at age eight. This study also examined whether genetic or environmental factors were driving these behaviors. Participants were from the ongoing Arizona Twin Project (N=340 twin children). 25% of the twins were monozygotic, 35% were same-sex dizygotic, and 35% were opposite-sex dizygotic twins. Preliminary correlations showed bidirectional effects between early emotional availability, problem behaviors and parental warmth, authoritarian parenting, internalizing, externalizing and ADHD symptoms at age eight; however, once twin dependence and covariates were controlled for, the bidirectional effects were no longer significant. One important finding emerged: early problem behaviors were predictive of later problem behaviors at eight years. The study also found that externalizing and ADHD symptoms were more heritable than emotional availability, early problem behaviors, and internalizing symptoms. Therefore, interventions should be developed addressing the environmental influences that contribute to early problem behaviors.
ContributorsKaur, Navneet (Author) / Lemery-Chalfant, Kathryn (Thesis director) / Miadich, Samantha (Committee member) / Davis, Mary (Committee member) / Sanford School of Social and Family Dynamics (Contributor) / Department of Psychology (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05