Theses and Dissertations
This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students.
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- Creators: Turaga, Pavan
- Creators: Bakkaloglu, Bertan
Description
The aging process due to Bias Temperature Instability (both NBTI and PBTI) and Channel Hot Carrier (CHC) is a key limiting factor of circuit lifetime in CMOS design. Threshold voltage shift due to BTI is a strong function of stress voltage and temperature complicating stress and recovery prediction. This poses a unique challenge for long-term aging prediction for wide range of stress patterns. Traditional approaches usually resort to an average stress waveform to simplify the lifetime prediction. They are efficient, but fail to capture circuit operation, especially under dynamic voltage scaling (DVS) or in analog/mixed signal designs where the stress waveform is much more random. This work presents a suite of modelling solutions for BTI that enable aging simulation under all possible stress conditions. Key features of this work are compact models to predict BTI aging based on Reaction-Diffusion theory when the stress voltage is varying. The results to both reaction-diffusion (RD) and trapping-detrapping (TD) mechanisms are presented to cover underlying physics. Silicon validation of these models is performed at 28nm, 45nm and 65nm technology nodes, at both device and circuit levels. Efficient simulation leveraging the BTI models under DVS and random input waveform is applied to both digital and analog representative circuits such as ring oscillators and LNA. Both physical mechanisms are combined into a unified model which improves prediction accuracy at 45nm and 65nm nodes. Critical failure condition is also illustrated based on NBTI and PBTI at 28nm. A comprehensive picture for duty cycle shift is shown. DC stress under clock gating schemes results in monotonic shift in duty cycle which an AC stress causes duty cycle to converge close to 50% value. Proposed work provides a general and comprehensive solution to aging analysis under random stress patterns under BTI.
Channel hot carrier (CHC) is another dominant degradation mechanism which affects analog and mixed signal circuits (AMS) as transistor operates continuously in saturation condition. New model is proposed to account for e-e scattering in advanced technology nodes due to high gate electric field. The model is validated with 28nm and 65nm thick oxide data for different stress voltages. It demonstrates shift in worst case CHC condition to Vgs=Vds from Vgs=0.5Vds. A novel iteration based aging simulation framework for AMS designs is proposed which eliminates limitation for conventional reliability tools. This approach helps us identify a unique positive feedback mechanism termed as Bias Runaway. Bias runaway, is rapid increase of the bias voltage in AMS circuits which occurs when the feedback between the bias current and the effect of channel hot carrier turns into positive. The degradation of CHC is a gradual process but under specific circumstances, the degradation rate can be dramatically accelerated. Such a catastrophic phenomenon is highly sensitive to the initial operation condition, as well as transistor gate length. Based on 65nm silicon data, our work investigates the critical condition that triggers bias runaway, and the impact of gate length tuning. We develop new compact models as well as the simulation methodology for circuit diagnosis, and propose design solutions and the trade-offs to avoid bias runaway, which is vitally important to reliable AMS designs.
Channel hot carrier (CHC) is another dominant degradation mechanism which affects analog and mixed signal circuits (AMS) as transistor operates continuously in saturation condition. New model is proposed to account for e-e scattering in advanced technology nodes due to high gate electric field. The model is validated with 28nm and 65nm thick oxide data for different stress voltages. It demonstrates shift in worst case CHC condition to Vgs=Vds from Vgs=0.5Vds. A novel iteration based aging simulation framework for AMS designs is proposed which eliminates limitation for conventional reliability tools. This approach helps us identify a unique positive feedback mechanism termed as Bias Runaway. Bias runaway, is rapid increase of the bias voltage in AMS circuits which occurs when the feedback between the bias current and the effect of channel hot carrier turns into positive. The degradation of CHC is a gradual process but under specific circumstances, the degradation rate can be dramatically accelerated. Such a catastrophic phenomenon is highly sensitive to the initial operation condition, as well as transistor gate length. Based on 65nm silicon data, our work investigates the critical condition that triggers bias runaway, and the impact of gate length tuning. We develop new compact models as well as the simulation methodology for circuit diagnosis, and propose design solutions and the trade-offs to avoid bias runaway, which is vitally important to reliable AMS designs.
ContributorsSutaria, Ketul (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Chakrabarti, Chaitali (Committee member) / Yu, Shimeng (Committee member) / Arizona State University (Publisher)
Created2014
Description
In UAVs and parking lots, it is typical to first collect an enormous number of pixels using conventional imagers. This is followed by employment of expensive methods to compress by throwing away redundant data. Subsequently, the compressed data is transmitted to a ground station. The past decade has seen the emergence of novel imagers called spatial-multiplexing cameras, which offer compression at the sensing level itself by providing an arbitrary linear measurements of the scene instead of pixel-based sampling. In this dissertation, I discuss various approaches for effective information extraction from spatial-multiplexing measurements and present the trade-offs between reliability of the performance and computational/storage load of the system. In the first part, I present a reconstruction-free approach to high-level inference in computer vision, wherein I consider the specific case of activity analysis, and show that using correlation filters, one can perform effective action recognition and localization directly from a class of spatial-multiplexing cameras, called compressive cameras, even at very low measurement rates of 1\%. In the second part, I outline a deep learning based non-iterative and real-time algorithm to reconstruct images from compressively sensed (CS) measurements, which can outperform the traditional iterative CS reconstruction algorithms in terms of reconstruction quality and time complexity, especially at low measurement rates. To overcome the limitations of compressive cameras, which are operated with random measurements and not particularly tuned to any task, in the third part of the dissertation, I propose a method to design spatial-multiplexing measurements, which are tuned to facilitate the easy extraction of features that are useful in computer vision tasks like object tracking. The work presented in the dissertation provides sufficient evidence to high-level inference in computer vision at extremely low measurement rates, and hence allows us to think about the possibility of revamping the current day computer systems.
ContributorsKulkarni, Kuldeep Sharad (Author) / Turaga, Pavan (Thesis advisor) / Li, Baoxin (Committee member) / Chakrabarti, Chaitali (Committee member) / Sankaranarayanan, Aswin (Committee member) / LiKamWa, Robert (Committee member) / Arizona State University (Publisher)
Created2017
Description
Millimeter-wave (mmWave) and sub-terahertz (sub-THz) systems aim to utilize the large bandwidth available at these frequencies. This has the potential to enable several future applications that require high data rates, such as autonomous vehicles and digital twins. These systems, however, have several challenges that need to be addressed to realize their gains in practice. First, they need to deploy large antenna arrays and use narrow beams to guarantee sufficient receive power. Adjusting the narrow beams of the large antenna arrays incurs massive beam training overhead. Second, the sensitivity to blockages is a key challenge for mmWave and THz networks. Since these networks mainly rely on line-of-sight (LOS) links, sudden link blockages highly threaten the reliability of the networks. Further, when the LOS link is blocked, the network typically needs to hand off the user to another LOS basestation, which may incur critical time latency, especially if a search over a large codebook of narrow beams is needed. A promising way to tackle both these challenges lies in leveraging additional side information such as visual, LiDAR, radar, and position data. These sensors provide rich information about the wireless environment, which can be utilized for fast beam and blockage prediction. This dissertation presents a machine-learning framework for sensing-aided beam and blockage prediction. In particular, for beam prediction, this work proposes to utilize visual and positional data to predict the optimal beam indices. For the first time, this work investigates the sensing-aided beam prediction task in a real-world vehicle-to-infrastructure and drone communication scenario. Similarly, for blockage prediction, this dissertation proposes a multi-modal wireless communication solution that utilizes bimodal machine learning to perform proactive blockage prediction and user hand-off. Evaluations on both real-world and synthetic datasets illustrate the promising performance of the proposed solutions and highlight their potential for next-generation communication and sensing systems.
ContributorsCharan, Gouranga (Author) / Alkhateeb, Ahmed (Thesis advisor) / Chakrabarti, Chaitali (Committee member) / Turaga, Pavan (Committee member) / Michelusi, Nicolò (Committee member) / Arizona State University (Publisher)
Created2024