Theses and Dissertations
This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students.
Displaying 21 - 30 of 89
Description
Robotic rehabilitation for upper limb post-stroke recovery is a developing technology. However, there are major issues in the implementation of this type of rehabilitation, issues which decrease efficacy. Two of the major solutions currently being explored to the upper limb post-stroke rehabilitation problem are the use of socially assistive rehabilitative robots, robots which directly interact with patients, and the use of exoskeleton-based systems of rehabilitation. While there is great promise in both of these techniques, they currently lack sufficient efficacy to objectively justify their costs. The overall efficacy to both of these techniques is about the same as conventional therapy, yet each has higher overhead costs that conventional therapy does. However there are associated long-term cost savings in each case, meaning that the actual current viability of either of these techniques is somewhat nebulous. In both cases, the problems which decrease technique viability are largely related to joint action, the interaction between robot and human in completing specific tasks, and issues in robot adaptability that make joint action difficult. As such, the largest part of current research into rehabilitative robotics aims to make robots behave in more "human-like" manners or to bypass the joint action problem entirely.
ContributorsRamakrishna, Vijay Kambhampati (Author) / Helms Tillery, Stephen (Thesis director) / Buneo, Christopher (Committee member) / Barrett, The Honors College (Contributor) / Economics Program in CLAS (Contributor) / W. P. Carey School of Business (Contributor) / School of Life Sciences (Contributor)
Created2015-05
Description
Implantable medical device technology is commonly used by doctors for disease management, aiding to improve patient quality of life. However, it is possible for these devices to be exposed to ionizing radiation during various medical therapeutic and diagnostic activities while implanted. This commands that these devices remain fully operational during, and long after, radiation exposure. Many implantable medical devices employ standard commercial complementary metal-oxide-semiconductor (CMOS) processes for integrated circuit (IC) development, which have been shown to degrade with radiation exposure. This necessitates that device manufacturers study the effects of ionizing radiation on their products, and work to mitigate those effects to maintain a high standard of reliability. Mitigation can be completed through targeted radiation hardening by design (RHBD) techniques as not to infringe on the device operational specifications. This thesis details a complete radiation analysis methodology that can be implemented to examine the effects of ionizing radiation on an IC as part of RHBD efforts. The methodology is put into practice to determine the failure mechanism in a charge pump circuit, common in many of today's implantable pacemaker designs, as a case study. Charge pump irradiation data shows a reduction of circuit output voltage with applied dose. Through testing of individual test devices, the response is identified as parasitic inter-device leakage caused by trapped oxide charge buildup in the isolation oxides. A library of compact models is generated to represent isolation oxide parasitics based on test structure data along with 2-Dimensional structure simulation results. The original charge pump schematic is then back-annotated with transistors representative of the parasitic. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit, accounting for possible parasitic devices activated by radiation exposure. By selecting a compact model for the parasitics generated at a specific dose, the compete circuit response is then simulated at the defined dose. The reduction of circuit output voltage with dose is then re-created in a radiation-enabled simulation validating the analysis methodology.
ContributorsSchlenvogt, Garrett (Author) / Barnaby, Hugh J (Thesis advisor) / Goodnick, Stephen (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2010
Description
Head turning is a common sound localization strategy in primates. A novel system that can track head movement and acoustic signals received at the entrance to the ear canal was tested to obtain binaural sound localization information during fast head movement of marmoset monkey. Analysis of binaural information was conducted with a focus on inter-aural level difference (ILD) and inter-aural time difference (ITD) at various head positions over time. The results showed that during fast head turns, the ITDs showed significant and clear changes in trajectory in response to low frequency stimuli. However, significant phase ambiguity occurred at frequencies greater than 2 kHz. Analysis of ITD and ILD information with animal vocalization as the stimulus was also tested. The results indicated that ILDs may provide more information in understanding the dynamics of head movement in response to animal vocalizations in the environment. The primary significance of this experimentation is the successful implementation of a system capable of simultaneously recording head movement and acoustic signals at the ear canals. The collected data provides insight into the usefulness of ITD and ILD as binaural cues during head movement.
ContributorsLabban, Kyle John (Author) / Zhou, Yi (Thesis director) / Buneo, Christopher (Committee member) / Dorman, Michael (Committee member) / Harrington Bioengineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05
Description
Within the context of the Finite-Difference Time-Domain (FDTD) method of simulating interactions between electromagnetic waves and matter, we adapt a known absorbing boundary condition, the Convolutional Perfectly-Matched Layer (CPML) to a background of Drude-dispersive medium. The purpose of this CPML is to terminate the virtual grid of scattering simulations by absorbing all outgoing radiation. In this thesis, we exposit the method of simulation, establish the Perfectly-Matched Layer as a domain which houses a spatial-coordinate transform to the complex plane, construct the CPML in vacuum, adapt the CPML to the Drude medium, and conclude with tests of the adapted CPML for two different scattering geometries.
ContributorsThornton, Brandon Maverick (Author) / Sukharev, Maxim (Thesis director) / Goodnick, Stephen (Committee member) / School of Mathematical and Statistical Sciences (Contributor) / Department of Physics (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
Electromyography (EMG) is an extremely useful tool in extracting control signals from the human body. Needle electromyography is the current standard for obtaining superior quality muscle signals and obtaining signals corresponding to individual muscles. However, needle EMG faces many problems when converting from the laboratory to marketable devices, specifically in home devices. Many patients have issues with needles and the extra care required of needle EMG is prohibitive. Therefore, a surface EMG device that can obtain clear signals from individual muscles would be valuable to many markets in the development of next generation in home devices. Here, signals from surface EMG were analyzed using a low noise EMG evaluation system (RHD 2000; Intan Technologies). The signal to noise ratio (SNR) was calculated using MatLab. The average SNR is 4.447 for the Extensor Carpi Ulnaris, and 7.369 for the Extensor Digitorum Communis. Spectral analysis was performed using the Welch approach in MatLab. The power spectrum indicated that low frequency signals dominate the EMG of small hand muscles. Also, harmonic bands of 60Hz noise were present as part of the signal which should be accounted for with filters in future iterations of the testing method. Provided is evidence that strong, independent signals were acquired and could be used in further application of surface EMG corresponding to lifting of the fingers.
ContributorsSnyder, Joshua Scott (Author) / Muthuswamy, Jit (Thesis director) / Buneo, Christopher (Committee member) / Harrington Bioengineering Program (Contributor) / School of International Letters and Cultures (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05
Description
In the developing field of nonlinear plasmonics, it is important to understand the nonlinear responses of the metallic nanostructures. In the present thesis, rigorous electrodynamical simulations based on the fully vectorial three-dimensional nonlinear hydrodynamic Drude model describing metal coupled to Maxwell's equations are performed to investigate linear and nonlinear responses of the plasmonic materials and their coupling with quantum emitters.The first part of this thesis is devoted to analyzing properties of the localized surface plasmon resonances of metallic nanostructures and their nonlinear optical responses. The behavior of the second harmonic is investigated as a function of various physical parameters at different plasmonic interfaces, revealing highly complex dynamics. By collaborating with several research teams, simulations are proven to be in close agreement with experiments, both quantitative and qualitative.
The second part of the thesis explores the strong coupling regime and its influence on the second harmonic generation. Considering plasmonic systems of molecules and periodic nanohole arrays on equal footing in the nonlinear regime is done for the first time. The results obtained are supported by a simple analytical model.
ContributorsDrobnyh, Elena (Author) / Sukharev, Maxim (Thesis advisor) / Schmidt, Kevin (Committee member) / Goodnick, Stephen (Committee member) / Mujica, Vladimiro (Committee member) / Arizona State University (Publisher)
Created2022
Description
Although previous studies have elucidated the role of position feedback in the regulation of movement, the specific contribution of Golgi tendon organs (GTO) in force feedback, especially in stabilizing voluntary limb movements, has remained theoretical due to limitations in experimental techniques. This study aims to establish force feedback regulation mediated by GTO afferent signals in two phases. The first phase of this study consisted of simulations using a neuromusculoskeletal model of the monoarticular elbow flexor (MEF) muscle group, assess the impact of force feedback in maintaining steady state interaction forces against variable environmental stiffness. Three models were trained to accurately reach an interaction force of 40N, 50N and 60N respectively, using a fixed stiffness level. Next, the environment stiffness was switched between untrained levels for open loop (OL) and closed loop (CL) variants of the same model. Results showed that compared to OL, CL showed decreased force deviations by 10.43%, 12.11% and 13.02% for each of the models. Most importantly, it is also observed that in the absence of force feedback, environment stiffness is found to have an effect on the interaction force. In the second phase, human subjects were engaged in experiments utilizing an instrumented elbow exoskeleton that applied loads to the MEF muscle group, closely mimicking the simulation conditions. The experiments consisted of reference, blind and catch trial types, and 3 stiffness levels. Subjects were first trained to reach for a predetermined target force. During catch trials, stiffness levels were randomized between reaches. Responses obtained from these experiments showed that subjects were able to regulate forces with no significant effects of trial type or stiffness level. Since experimental results align closely with that of closed loop model simulations, the presence of force feedback mechanisms mediated by GTO within the human neuromuscular system is established. This study not only unveils the critical involvement of GTO in force feedback but also emphasizes the importance of understanding these mechanisms for developing advanced neuroprosthetics and rehabilitation strategies, shedding light on the intricate interplay between sensory inputs and motor responses in human proprioception.
ContributorsAbishek, Kevin (Author) / Lee, Hyunglae (Thesis advisor) / Buneo, Christopher (Committee member) / Santello, Marco (Committee member) / Arizona State University (Publisher)
Created2023
Description
The research of alternative materials and new device architectures to exceed the limits of conventional silicon-based devices has been sparked by the persistent pursuit of semiconductor technology scaling. The development of tungsten diselenide (WSe2) and molybdenum disulfide (MoS2), well-known member of the transition metal dichalcogenide (TMD) family, has made great strides towards ultrascaled two-dimensional (2D) field-effect-transistors (FETs). The scaling issues facing silicon-based complementary metal-oxide-semiconductor (CMOS) technologies can be solved by 2D FETs, which show extraordinary potential.This dissertation provides a comprehensive experimental analysis relating to improvements in p-type metal-oxide-semiconductor (PMOS) FETs with few-layer WSe2 and high-κ metal gate (HKMG) stacks. Compared to this works improved methods, standard metallization (more damaging to underlying channel) results in significant Fermi-level pinning, although Schottky barrier heights remain small (< 100 meV) when using high work function metals. Temperature-dependent analysis reveals a dominant contribution to contact resistance from the damaged channel access region. Thus, through less damaging metallization methods combined with strongly scaled HKMG stacks significant improvements were achieved in contact resistance and PMOS FET overall performance. A clean contact/channel interface was achieved through high-vacuum evaporation and temperature-controlled stepped deposition. Theoretical analysis using a Landauer transport adapted to WSe2 Schottky barrier FETs (SB-FETs) elucidates the prospects of nanoscale 2D PMOS FETs indicating high-performance towards the ultimate CMOS scaling limit.
Next, this dissertation discusses how device electrical characteristics are affected by scaling of equivalent oxide thickness (EOT) and by adopting double-gate FET architectures, as well as how this might support CMOS scaling. An improved gate control over the channel is made possible by scaling EOT, improving on-off current ratios, carrier mobility, and subthreshold swing. This study also elucidates the impact of EOT scaling on FET gate hysteresis attributed to charge-trapping effects in high-κ-dielectrics prepared by atomic layer deposition (ALD). These developments in 2D FETs offer a compelling alternative to conventional silicon-based devices and a path for continued transistor scaling. This research contributes to ongoing efforts in 2D materials for future semiconductor technologies. Finally, this work introduces devices based on emerging Janus TMDs and bismuth oxyselenide (Bi2O2Se) layered semiconductors.
ContributorsPatoary, Md Naim Hossain (Author) / Sanchez Esqueda, Ivan (Thesis advisor) / Tongay, Sefaattin (Committee member) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2023
Description
Gallium Nitride (GaN) is uniquely suited for Radio Frequency (RF) and power electronic applications due to its intrinsically high saturation velocity and high mobility compared to Silicon and Silicon Carbide (SiC). High Electron Mobility Transistors (HEMTs) have remained the primary topology for GaN transistors in RF applications. However, GaN HEMTs suffer from a variety of issues such as current crowding, lack of enhancement mode (E-Mode) operation and non-linearity. These drawbacks slow the widespread adoption of GaN devices for ultra-low voltage (ULV) applications such as voltage regulators, automotive and computing applications. E-mode operation is especially desired in low-voltage high frequency switching applications. In this context, Fin Field Effect Transistors (FinFETs) offer an alternative topology for ULV applications as opposed to conventional HEMTs. Recent advances in material processing, high aspect ratio epitaxial growth and etching methods has led to an increased interest in 3D nanostructures such as Nano-FinFETs and Nanowire FETs. A typical 3D nano-FinFET is the AlGaN/GaN Metal Insulator Semiconductor (MIS) FET wherein a layer of Al2O3 surrounds the AlGaN/GaN fin. The presence of the side gates leads to additional lateral confinement of the 2D Electron Gas (2DEG). Theoretical calculations of transport properties in confined systems such as AlGaN/GaN Finfets are scarce compared to those of their planar HEMT counterparts.
A novel simulator is presented in this dissertation, which employs self-consistent solution of the coupled 1D Boltzmann – 2D Schrödinger – 3D Poisson problem, to yield the channel electrostatics and the low electric field transport characteristics of AlGaN/GaN MIS FinFETs. The low field electron mobility is determined by solving the Boltzmann transport equation in the Quasi-1D region using 1D Ensemble Monte Carlo method. Three electron-phonon scattering mechanisms (acoustic, piezoelectric and polar optical phonon scattering) and interface roughness scattering at the AlGaN/GaN interface are considered in this theoretical model. Simulated low-field electron mobility and its temperature dependence are in agreement with experimental data reported in the literature.
A quasi-1D version of alloy clustering model is derived and implemented and the limiting effect of alloy clustering on the low-field electron mobility is investigated for the first time for MIS FinFET device structures.
ContributorsKumar, Viswanathan Naveen (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Nemanich, Robert (Committee member) / Povolotskyi, Michael (Committee member) / Esqueda, Ivan Sanchez (Committee member) / Arizona State University (Publisher)
Created2022
Description
To keep up with the increasing demand for solar energy, higher efficiencies are necessary while keeping cost at a minimum. The easiest theoretical way to achieve that is using silicon-based multi-junction solar cells. However, there are major challenges in effectively implementing such a system. Much work has been done recently to integrate III-V with Si for multi-junction solar cell purposes. The focus of this paper is to explore GaP-based dilute nitrides as a possible top cell candidate for Si-based multi-junctions. The direct growth of dilute nitrides in a lattice-matched configuration epitaxially in literature is reviewed. The problems associated with such growths are outlined and pathways to mitigate these problems are presented. The need for a GaP buffer layer between the dilute nitride film and Si is established. Defects in GaP/Si system are explored in detail and a study on pit formation during such growth is performed. Effective suppression of pits in GaP surface grown on Si is achieved. Issues facing GaP-based dilute nitrides in terms of material properties are outlined. Review of these challenges is done and some possible future areas of interest to improve material quality are established. Finally, the growth process of dilute nitrides using Molecular Beam Epitaxy tool is explained. Results for GaNP grown on Si pre and post growth treatments are detailed.
ContributorsMurali, Srinath (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / King, Richard (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2022