This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students. 

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The world has seen a revolution in cellular communication with the advent of 5G, which enables gigabits per second data speed with low latency, massive capacity, and increased availability. Complex modulated signals are used in these moderncommunication systems to achieve high spectral efficiency, and these signals exhibit high peak to

The world has seen a revolution in cellular communication with the advent of 5G, which enables gigabits per second data speed with low latency, massive capacity, and increased availability. Complex modulated signals are used in these moderncommunication systems to achieve high spectral efficiency, and these signals exhibit high peak to average power ratios (PAPR). Design of cellular infrastructure hardware to support these complex signals therefore becomes challenging, as the transmitter’s radio frequency power amplifier (RF PA) needs to remain highly efficient at both peak and backed off power conditions. Additionally, these PAs should exhibit high linearity and support continually increasing bandwidths. Many advanced PA configurations exhibit high efficiency for processing legacy communications signals. Some of the most popular architectures are Envelope Elimination and Restoration (EER), Envelope Tracking (ET), Linear Amplification using Non-linear Component (LINC), Doherty Power Amplifiers (DPA), and Polar Transmitters. Among these techniques, the DPA is the most widely used architecture for base-station applications because of its simple configuration and ability to be linearized using simple digital pre-distortion (DPD) algorithms. To support the cellular infrastructure needs of 5G and beyond, RF PAs, specifically DPA architectures, must be further enhanced to support broader bandwidths as well as smaller form-factors with higher levels of integration. The following four novel works are presented in this dissertation to support RF PA requirements for future cellular infrastructure: 1. A mathematical analysis to analyze the effects of non-linear parasitic capacitance (Cds) on the operation of continuous class-F (CCF) mode power amplifiers and identify their optimum operating range for high power and efficiency. 2. A methodology to incorporate a class-J harmonic trapping network inside the PA package by considering the effect of non-linear Cds, thus reducing the DPA footprint while achieving high RF performance. 3. A novel method of synthesizing the DPA’s output combining network (OCN) to realize an integrated two-stage integrated LDMOS asymmetric DPA. 4. A novel extended back-off efficiency range DPA architecture that engineers the mutual interaction between combining load and peaking off-state impedance. The theory and architecture are verified through a GaN-based DPA design.
ContributorsAhmed, Maruf Newaz (Author) / Kitchen, Jennifer (Thesis advisor) / Aberle, James (Committee member) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2022
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Description
This thesis presents three novel studies. The first two works focus on galvanically isolated chip-to-chip communication, and the third research studies class-E pulse-width modulated power amplifiers. First, a common-mode resilient CMOS (complementary metal-oxide-semiconductor) galvanically isolated Radio Frequency (RF) chip-to-chip communication system is presented utilizing laterally resonant coupled circuits to increases

This thesis presents three novel studies. The first two works focus on galvanically isolated chip-to-chip communication, and the third research studies class-E pulse-width modulated power amplifiers. First, a common-mode resilient CMOS (complementary metal-oxide-semiconductor) galvanically isolated Radio Frequency (RF) chip-to-chip communication system is presented utilizing laterally resonant coupled circuits to increases maximum common-mode transient immunity and the isolation capability of galvanic isolators in a low-cost standard CMOS solution beyond the limits provided from the vertical coupling. The design provides the highest reported CMTI (common-mode transient immunity) of more than 600 kV/µs, 5 kVpk isolation, and a chip area of 0.95 mm2. In the second work, a bi-directional ultra-wideband transformer-coupled galvanic isolator is reported for the first time. The proposed design merges the functionality of two isolated channels into one magnetically coupled communication, enabling up to 50% form-factor and assembly cost reduction while achieving a simultaneously robust and state-of-art performance. This work achieves simultaneous robust, wideband, and energy-efficient performance of 300 Mb/s data rate, isolation of 7.8 kVrms, and power consumption and propagation delay of 200 pJ/b and 5 ns, respectively, in only 0.8 mm2 area. The third works studies class-E pulse-width modulated (PWM) Power amplifiers (PAs). For the first time, it presents a design technique to significantly extend the Power back-off (PBO) dynamic range of PWM PAs over the prior art. A proof-of-concept watt-level class-E PA is designed using a GaN HEMT and exhibits more than 6dB dynamic range for a 50 to 30 percent duty cycle variation. Moreover, in this work, the effects of non-idealities on performance and design of class-E power amplifiers for variable supply on and pulse-width operations are characterized and studied, including the effect of non-linear parasitic capacitances and its exploitation for enhancement of average efficiency and self-heating effects in class-E SMPAs using a new over dry-ice measurement technique was presented for this first time. The non-ideality study allows for capturing a full view of the design requirement and considerations of class-E power amplifiers and provides a window to the phenomena that lead to a mismatch between the ideal and actual performance of class-E power amplifiers and their root causes.
ContributorsJavidahmadabadi, Mahdi (Author) / Kitchen, Jennifer N (Thesis advisor) / Aberle, James (Committee member) / Bakkaloglu, Bertan (Committee member) / Burton, Richard (Committee member) / Arizona State University (Publisher)
Created2021
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Description
In this dissertation, enhanced coherent detection of terahertz (THz) radiation is presented for Silicon integrated circuits (ICs). In general THz receivers implemented in silicon technologies face a challenge due to the high noise figure (NF) of the low noise amplifier (LNA) and low conversion gain of the radio frequency (RF)

In this dissertation, enhanced coherent detection of terahertz (THz) radiation is presented for Silicon integrated circuits (ICs). In general THz receivers implemented in silicon technologies face a challenge due to the high noise figure (NF) of the low noise amplifier (LNA) and low conversion gain of the radio frequency (RF) mixers. Moreover, issues with implementing local oscillators (LOs) further compound these challenges, including power driving mixes, distribution networks, and overall power consumption, particularly for large-scale arrays. To address these inherent obstacles, two notable cases of enhancing THz receiver performance are presented. In the Sideband Separation Receiver (SSR) for space-borne applications is introduced. Implemented in SiGe BiCMOS technology this broadband SSR boasts a high Image Rejection Ratio (IRR) exceeding 20 dB across 220 – 320 GHz. Employing a modified Weaver architecture, optimized for simultaneous spectral line observation, it utilizes an I/Q double down-conversion, pushing the technological boundaries of silicon and enabling large-scale focal plane array (FPA) deployment in space. Notably, the use of a sub-harmonic down-conversion mixer (SHM) significantly reduces LO power generation challenges, enhancing scalability while maintaining minimal NF. In the 4x4 FPA active THz imager, a dual-polarized patch antenna operating at 420 GHz utilizes orthogonal polarization for RF and LO signals, coupled with a coherent homodyne power detector. Realized in 0.13µm SiGe HBT technology, the power detector is co-designing with the antenna to ensure minimal crosstalk and achieving -30dB cross-polarization isolation. Illumination of the LO enhances power detector performance without on-chip routing complexities, enabling scalability to 1K pixel THz imagers. Each pixel achieves a Noise-Equivalent Power (NEP) of 1 pW/√Hz at 420 GHz, and integration with a readout and digital filter ensures high dynamic range. Furthermore, this study explores radiation hardening techniques to mitigate single-event effects (SEEs) in high-frequency receivers operating in space. Leveraging a W-band receiver in 90 nm SiGe BiCMOS technology, matching considerations and diverse modes of operation are employed to reduce SEE susceptibility. Transient current pulse modeling, validated through TCAD simulations, demonstrates the effectiveness of proposed techniques in substantially mitigating SETs within the proposed radiation-hardened-by-design (RHBD) receiver front-end.
ContributorsAl Seragi, Ebrahim (Author) / Zeinolabedinzadeh, Saeed (Thesis advisor) / Trichopoulos, Georgios (Committee member) / Bakkaloglu, Bertan (Committee member) / Aberle, James (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2024
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Description
Recent advancements in communication standards, such as 5G demand transmitter hardware to support high data rates with high energy efficiency. With the revolution of communication standards, modulation schemes have become more complex and require high peak-to-average (PAPR) signals. In wireless transceiver hardware, the power amplifier (PA) consumes most of the

Recent advancements in communication standards, such as 5G demand transmitter hardware to support high data rates with high energy efficiency. With the revolution of communication standards, modulation schemes have become more complex and require high peak-to-average (PAPR) signals. In wireless transceiver hardware, the power amplifier (PA) consumes most of the transceiver’s DC power and is typically the bottleneck for transmitter linearity. Therefore, the transmitter’s performance directly depends on the PA. To support high PAPR signals, the PA must operate efficiently at its saturated and backoff output power. Maintaining high efficiency at both peak and backoff output power is challenging. One effective technique for addressing this problem is load modulation. Some of the prominent load-modulated PA architectures are outphasing PAs, load-modulated balanced amplifiers (LMBA), envelope elimination and restoration (EER), envelope tracking (ET), Doherty power amplifiers (DPA), and polar transmitters. Amongst them, the DPA is the most popular for infrastructure applications due to its simpler architecture compared to other techniques and linearizability with digital pre-distortion (DPD). Another crucial characteristic of progressing communication standards is wide signal bandwidths. High-efficiency power amplifiers like class J/F/F-1 and load-modulated PAs like the DPA exhibit narrowband performance because the amplifiers require precise output impedance terminations. Therefore, it is equally essential to develop adaptable PA solutions to process radio frequency (RF) signals with wide bandwidths. To support modern and future cellular infrastructure, RF PAs need to be innovated to increase the backoff power efficiency by two times or more and support ten times or more wider bandwidths than current state-of-the-art PAs. This work presents five RF PA analyses and implementations to support future wireless communications transmitter hardware. Chapter 2 presents an optimized output-matching network analysis and design to achieve extended output power backoff of the DPA. Chapters 3 and 4 unveil two bandwidth enhancement techniques for the DPA while maintaining extended output power backoff. Chapter 5 exhibits a dual-band hybrid mode PA design targeted for wideband applications. Chapter 6 presents a built-in self-test circuit integrated into a PA for output impedance monitoring. This can alleviate the PA performance degradation due to the variation in the PA's output load over frequency, process, and aging. All RF PAs in this dissertation are implemented using Gallium Nitride (GaN)-based high electron mobility transistors (HEMT), and the realized designs validate the proposed PAs' theories/architectures.
ContributorsRoychowdhury, Debatrayee (Author) / Kitchen, Jennifer (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Aberle, James (Committee member) / Arizona State University (Publisher)
Created2024