Theses and Dissertations
This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students.
Displaying 1 - 10 of 136
Description
Distributed estimation uses many inexpensive sensors to compose an accurate estimate of a given parameter. It is frequently implemented using wireless sensor networks. There have been several studies on optimizing power allocation in wireless sensor networks used for distributed estimation, the vast majority of which assume linear radio-frequency amplifiers. Linear amplifiers are inherently inefficient, so in this dissertation nonlinear amplifiers are examined to gain efficiency while operating distributed sensor networks. This research presents a method to boost efficiency by operating the amplifiers in the nonlinear region of operation. Operating amplifiers nonlinearly presents new challenges. First, nonlinear amplifier characteristics change across manufacturing process variation, temperature, operating voltage, and aging. Secondly, the equations conventionally used for estimators and performance expectations in linear amplify-and-forward systems fail. To compensate for the first challenge, predistortion is utilized not to linearize amplifiers but rather to force them to fit a common nonlinear limiting amplifier model close to the inherent amplifier performance. This minimizes the power impact and the training requirements for predistortion. Second, new estimators are required that account for transmitter nonlinearity. This research derives analytically and confirms via simulation new estimators and performance expectation equations for use in nonlinear distributed estimation. An additional complication when operating nonlinear amplifiers in a wireless environment is the influence of varied and potentially unknown channel gains. The impact of these varied gains and both measurement and channel noise sources on estimation performance are analyzed in this paper. Techniques for minimizing the estimate variance are developed. It is shown that optimizing transmitter power allocation to minimize estimate variance for the most-compressed parameter measurement is equivalent to the problem for linear sensors. Finally, a method for operating distributed estimation in a multipath environment is presented that is capable of developing robust estimates for a wide range of Rician K-factors. This dissertation demonstrates that implementing distributed estimation using nonlinear sensors can boost system efficiency and is compatible with existing techniques from the literature for boosting efficiency at the system level via sensor power allocation. Nonlinear transmitters work best when channel gains are known and channel noise and receiver noise levels are low.
ContributorsSantucci, Robert (Author) / Spanias, Andreas (Thesis advisor) / Tepedelenlioðlu, Cihan (Committee member) / Bakkaloglu, Bertan (Committee member) / Tsakalis, Kostas (Committee member) / Arizona State University (Publisher)
Created2013
Description
Radio frequency (RF) transceivers require a disproportionately high effort in terms of test development time, test equipment cost, and test time. The relatively high test cost stems from two contributing factors. First, RF transceivers require the measurement of a diverse set of specifications, requiring multiple test set-ups and long test times, which complicates load-board design, debug, and diagnosis. Second, high frequency operation necessitates the use of expensive equipment, resulting in higher per second test time cost compared with mixed-signal or digital circuits. Moreover, in terms of the non-recurring engineering cost, the need to measure complex specfications complicates the test development process and necessitates a long learning process for test engineers. Test time is dominated by changing and settling time for each test set-up. Thus, single set-up test solutions are desirable. Loop-back configuration where the transmitter output is connected to the receiver input are used as the desirable test set- up for RF transceivers, since it eliminates the reliance on expensive instrumentation for RF signal analysis and enables measuring multiple parameters at once. In-phase and Quadrature (IQ) imbalance, non-linearity, DC offset and IQ time skews are some of the most detrimental imperfections in transceiver performance. Measurement of these parameters in the loop-back mode is challenging due to the coupling between the receiver (RX) and transmitter (TX) parameters. Loop-back based solutions are proposed in this work to resolve this issue. A calibration algorithm for a subset of the above mentioned impairments is also presented. Error Vector Magnitude (EVM) is a system-level parameter that is specified for most advanced communication standards. EVM measurement often takes extensive test development efforts, tester resources, and long test times. EVM is analytically related to system impairments, which are typically measured in a production test i environment. Thus, EVM test can be eliminated from the test list if the relations between EVM and system impairments are derived independent of the circuit implementation and manufacturing process. In this work, the focus is on the WLAN standard, and deriving the relations between EVM and three of the most detrimental impairments for QAM/OFDM based systems (IQ imbalance, non-linearity, and noise). Having low cost test techniques for measuring the RF transceivers imperfections and being able to analytically compute EVM from the measured parameters is a complete test solution for RF transceivers. These techniques along with the proposed calibration method can be used in improving the yield by widening the pass/fail boundaries for transceivers imperfections. For all of the proposed methods, simulation and hardware measurements prove that the proposed techniques provide accurate characterization of RF transceivers.
ContributorsNassery, Afsaneh (Author) / Ozev, Sule (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kiaei, Sayfe (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2013
Description
Doppler radar can be used to measure respiration and heart rate without contact and through obstacles. In this work, a Doppler radar architecture at 2.4 GHz and a new signal processing algorithm to estimate the respiration and heart rate are presented. The received signal is dominated by the transceiver noise, LO phase noise and clutter which reduces the signal-to-noise ratio of the desired signal. The proposed architecture and algorithm are used to mitigate these issues and obtain an accurate estimate of the heart and respiration rate. Quadrature low-IF transceiver architecture is adopted to resolve null point problem as well as avoid 1/f noise and DC offset due to mixer-LO coupling. Adaptive clutter cancellation algorithm is used to enhance receiver sensitivity coupled with a novel Pattern Search in Noise Subspace (PSNS) algorithm is used to estimate respiration and heart rate. PSNS is a modified MUSIC algorithm which uses the phase noise to enhance Doppler shift detection. A prototype system was implemented using off-the-shelf TI and RFMD transceiver and tests were conduct with eight individuals. The measured results shows accurate estimate of the cardio pulmonary signals in low-SNR conditions and have been tested up to a distance of 6 meters.
ContributorsKhunti, Hitesh Devshi (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Bliss, Daniel (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2013
Description
Low Power, High Speed Analog to Digital Converters continues to remain one of the major building blocks for modern communication systems. Due to continuing trend of the aggressive scaling of the MOS devices, the susceptibility of most of the deep-sub micron CMOS technologies to the ionizing radiation has decreased over the period of time. When electronic circuits fabricated in these CMOS technologies are exposed to ionizing radiations, considerable change in the performance of circuits can be seen over a period of time. The change in the performance can be quantified in terms of decreasing linearity of the circuit which directly relates to the resolution of the circuit. Analog to Digital Converter is one of the most critical blocks of any electronic circuitry sent to space. The degradation in the performance of an Analog to Digital Converter due to radiation effects can jeopardize many research programs related to space. These radiation effects can completely hamper the working of a circuit. This thesis discusses the effects of Ionizing radiation on an 11 bit 325 MSPS pipeline ADC. The ADC is exposed to different doses of radiation and performance is compared.
ContributorsVashisth, Siddharth (Author) / Barnaby, Hugh J (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Mikkola, Esko (Committee member) / Arizona State University (Publisher)
Created2013
Description
Micro Electro Mechanical Systems (MEMS) is one of the fastest growing field in silicon industry. Low cost production is key for any company to improve their market share. MEMS testing is challenging since input to test a MEMS device require physical stimulus like acceleration, pressure etc. Also, MEMS device vary with process and requires calibration to make them reliable. This increases test cost and testing time. This challenge can be overcome by combining electrical stimulus based testing along with statistical analysis on MEMS response for electrical stimulus and also limited physical stimulus response data. This thesis proposes electrical stimulus based built in self test(BIST) which can be used to get MEMS data and later this data can be used for statistical analysis. A capacitive MEMS accelerometer is considered to test this BIST approach. This BIST circuit overhead is less and utilizes most of the standard readout circuit. This thesis discusses accelerometer response for electrical stimulus and BIST architecture. As a part of this BIST circuit, a second order sigma delta modulator has been designed. This modulator has a sampling frequency of 1MHz and bandwidth of 6KHz. SNDR of 60dB is achieved with 1Vpp differential input signal and 3.3V supply
ContributorsKundur, Vinay (Author) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2013
Description
The design and development of analog/mixed-signal (AMS) integrated circuits (ICs) is becoming increasingly expensive, complex, and lengthy. Rapid prototyping and emulation of analog ICs will be significant in the design and testing of complex analog systems. A new approach, Programmable ANalog Device Array (PANDA) that maps any AMS design problem to a transistor-level programmable hardware, is proposed. This approach enables fast system level validation and a reduction in post-Silicon bugs, minimizing design risk and cost. The unique features of the approach include 1) transistor-level programmability that emulates each transistor behavior in an analog design, achieving very fine granularity of reconfiguration; 2) programmable switches that are treated as a design component during analog transistor emulating, and optimized with the reconfiguration matrix; 3) compensation of AC performance degradation through boosting the bias current. Based on these principles, a digitally controlled PANDA platform is designed at 45nm node that can map AMS modules across 22nm to 90nm technology nodes. A systematic emulation approach to map any analog transistor to PANDA cell is proposed, which achieves transistor level matching accuracy of less than 5% for ID and less than 10% for Rout and Gm. Circuit level analog metrics of a voltage-controlled oscillator (VCO) emulated by PANDA, match to those of the original designs in 90nm nodes with less than a 5% error. Voltage-controlled delay lines at 65nm and 90nm are emulated by 32nm PANDA, which successfully match important analog metrics. And at-speed emulation is achieved as well. Several other 90nm analog blocks are successfully emulated by the 45nm PANDA platform, including a folded-cascode operational amplifier and a sample-and-hold module (S/H)
ContributorsXu, Cheng (Author) / Cao, Yu (Thesis advisor) / Blain Christen, Jennifer (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2012
Description
Scaling of the classical planar MOSFET below 20 nm gate length is facing not only technological difficulties but also limitations imposed by short channel effects, gate and junction leakage current due to quantum tunneling, high body doping induced threshold voltage variation, and carrier mobility degradation. Non-classical multiple-gate structures such as double-gate (DG) FinFETs and surrounding gate field-effect-transistors (SGFETs) have good electrostatic integrity and are an alternative to planar MOSFETs for below 20 nm technology nodes. Circuit design with these devices need compact models for SPICE simulation. In this work physics based compact models for the common-gate symmetric DG-FinFET, independent-gate asymmetric DG-FinFET, and SGFET are developed. Despite the complex device structure and boundary conditions for the Poisson-Boltzmann equation, the core structure of the DG-FinFET and SGFET models, are maintained similar to the surface potential based compact models for planar MOSFETs such as SP and PSP. TCAD simulations show differences between the transient behavior and the capacitance-voltage characteristics of bulk and SOI FinFETs if the gate-voltage swing includes the accumulation region. This effect can be captured by a compact model of FinFETs only if it includes the contribution of both types of carriers in the Poisson-Boltzmann equation. An accurate implicit input voltage equation valid in all regions of operation is proposed for common-gate symmetric DG-FinFETs with intrinsic or lightly doped bodies. A closed-form algorithm is developed for solving the new input voltage equation including ambipolar effects. The algorithm is verified for both the surface potential and its derivatives and includes a previously published analytical approximation for surface potential as a special case when ambipolar effects can be neglected. The symmetric linearization method for common-gate symmetric DG-FinFETs is developed in a form free of the charge-sheet approximation present in its original formulation for bulk MOSFETs. The accuracy of the proposed technique is verified by comparison with exact results. An alternative and computationally efficient description of the boundary between the trigonometric and hyperbolic solutions of the Poisson-Boltzmann equation for the independent-gate asymmetric DG-FinFET is developed in terms of the Lambert W function. Efficient numerical algorithm is proposed for solving the input voltage equation. Analytical expressions for terminal charges of an independent-gate asymmetric DG-FinFET are derived. The new charge model is C-infinity continuous, valid for weak as well as for strong inversion condition of both the channels and does not involve the charge-sheet approximation. This is accomplished by developing the symmetric linearization method in a form that does not require identical boundary conditions at the two Si-SiO2 interfaces and allows for volume inversion in the DG-FinFET. Verification of the model is performed with both numerical computations and 2D TCAD simulations under a wide range of biasing conditions. The model is implemented in a standard circuit simulator through Verilog-A code. Simulation examples for both digital and analog circuits verify good model convergence and demonstrate the capabilities of new circuit topologies that can be implemented using independent-gate asymmetric DG-FinFETs.
ContributorsDessai, Gajanan (Author) / Gildenblat, Gennady (Committee member) / McAndrew, Colin (Committee member) / Cao, Yu (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
Description
The medical industry has benefited greatly by electronic integration resulting in the explosive growth of active medical implants. These devices often treat and monitor chronic health conditions and require very minimal power usage. A key part of these medical implants is an ultra-low power two way wireless communication system. This enables both control of the implant as well as relay of information collected. This research has focused on a high performance receiver for medical implant applications. One commonly quoted specification to compare receivers is energy per bit required. This metric is useful, but incomplete in that it ignores Sensitivity level, bit error rate, and immunity to interferers. In this study exploration of receiver architectures and convergence upon a comprehensive solution is done. This analysis is used to design and build a system for validation. The Direct Conversion Receiver architecture implemented for the MICS standard in 0.18 µm CMOS process consumes approximately 2 mW is competitive with published research.
ContributorsStevens, Mark (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
Description
Test cost has become a significant portion of device cost and a bottleneck in high volume manufacturing. Increasing integration density and shrinking feature sizes increased test time/cost and reduce observability. Test engineers have to put a tremendous effort in order to maintain test cost within an acceptable budget. Unfortunately, there is not a single straightforward solution to the problem. Products that are tested have several application domains and distinct customer profiles. Some products are required to operate for long periods of time while others are required to be low cost and optimized for low cost. Multitude of constraints and goals make it impossible to find a single solution that work for all cases. Hence, test development/optimization is typically design/circuit dependent and even process specific. Therefore, test optimization cannot be performed using a single test approach, but necessitates a diversity of approaches. This works aims at addressing test cost minimization and test quality improvement at various levels. In the first chapter of the work, we investigate pre-silicon strategies, such as design for test and pre-silicon statistical simulation optimization. In the second chapter, we investigate efficient post-silicon test strategies, such as adaptive test, adaptive multi-site test, outlier analysis, and process shift detection/tracking.
ContributorsYilmaz, Ender (Author) / Ozev, Sule (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Cao, Yu (Committee member) / Christen, Jennifer Blain (Committee member) / Arizona State University (Publisher)
Created2012
Description
Memories play an integral role in today's advanced ICs. Technology scaling has enabled high density designs at the price paid for impact due to variability and reliability. It is imperative to have accurate methods to measure and extract the variability in the SRAM cell to produce accurate reliability projections for future technologies. This work presents a novel test measurement and extraction technique which is non-invasive to the actual operation of the SRAM memory array. The salient features of this work include i) A single ended SRAM test structure with no disturbance to SRAM operations ii) a convenient test procedure that only requires quasi-static control of external voltages iii) non-iterative method that extracts the VTH variation of each transistor from eight independent switch point measurements. With the present day technology scaling, in addition to the variability with the process, there is also the impact of other aging mechanisms which become dominant. The various aging mechanisms like Negative Bias Temperature Instability (NBTI), Channel Hot Carrier (CHC) and Time Dependent Dielectric Breakdown (TDDB) are critical in the present day nano-scale technology nodes. In this work, we focus on the impact of NBTI due to aging in the SRAM cell and have used Trapping/De-Trapping theory based log(t) model to explain the shift in threshold voltage VTH. The aging section focuses on the following i) Impact of Statistical aging in PMOS device due to NBTI dominates the temporal shift of SRAM cell ii) Besides static variations , shifting in VTH demands increased guard-banding margins in design stage iii) Aging statistics remain constant during the shift, presenting a secondary effect in aging prediction. iv) We have investigated to see if the aging mechanism can be used as a compensation technique to reduce mismatch due to process variations. Finally, the entire test setup has been tested in SPICE and also validated with silicon and the results are presented. The method also facilitates the study of design metrics such as static, read and write noise margins and also the data retention voltage and thus help designers to improve the cell stability of SRAM.
ContributorsRavi, Venkatesa (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2013