This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students. 

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Description
Total dose sensing systems (or radiation detection systems) have many applications,

ranging from survey monitors used to supervise the generated radioactive waste at

nuclear power plants to personal dosimeters which measure the radiation dose

accumulated in individuals. This dissertation work will present two different types of

novel devices developed at Arizona State University for

Total dose sensing systems (or radiation detection systems) have many applications,

ranging from survey monitors used to supervise the generated radioactive waste at

nuclear power plants to personal dosimeters which measure the radiation dose

accumulated in individuals. This dissertation work will present two different types of

novel devices developed at Arizona State University for total dose sensing applications.

The first detector technology is a mechanically flexible metal-chalcogenide glass (ChG)

based system which is fabricated on low cost substrates and are intended as disposable

total dose sensors. Compared to existing commercial technologies, these thin film

radiation sensors are simpler in form and function, and cheaper to produce and operate.

The sensors measure dose through resistance change and are suitable for applications

such as reactor dosimetry, radiation chemistry, and clinical dosimetry. They are ideal for

wearable devices due to the lightweight construction, inherent robustness to resist

breaking when mechanically stressed, and ability to attach to non-flat objects. Moreover,

their performance can be easily controlled by tuning design variables and changing

incorporated materials. The second detector technology is a wireless dosimeter intended

for remote total dose sensing. They are based on a capacitively loaded folded patch

antenna resonating in the range of 3 GHz to 8 GHz for which the load capacitance varies

as a function of total dose. The dosimeter does not need power to operate thus enabling

its use and implementation in the field without requiring a battery for its read-out. As a

result, the dosimeter is suitable for applications such as unattended detection systems

destined for covert monitoring of merchandise crossing borders, where nuclear material

tracking is a concern. The sensitive element can be any device exhibiting a known

variation of capacitance with total ionizing dose. The sensitivity of the dosimeter is

related to the capacitance variation of the radiation sensitive device as well as the high

frequency system used for reading. Both technologies come with the advantage that they

are easy to manufacture with reasonably low cost and sensing can be readily read-out.
ContributorsMahmud, Adnan, Ph.D (Author) / Barnaby, Hugh J. (Thesis advisor) / Kozicki, Michael N (Committee member) / Gonzalez-Velo, Yago (Committee member) / Goryll, Michael (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2017
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Description
Programmable Metallization Cell (PMC) is a resistance-switching device based on migration of nanoscale quantities of cations in a solid electrolyte and formation of a conducting electrodeposit by the reductions of these cations. This dissertation presents electrical characterization results on Cu-SiO2 based PMC devices, which due to the na- ture of

Programmable Metallization Cell (PMC) is a resistance-switching device based on migration of nanoscale quantities of cations in a solid electrolyte and formation of a conducting electrodeposit by the reductions of these cations. This dissertation presents electrical characterization results on Cu-SiO2 based PMC devices, which due to the na- ture of materials can be easily integrated into the current Complimentary metal oxide semiconductor (CMOS) process line. Device structures representing individual mem- ory cells based on W bottom electrode and n-type Si bottom electrode were fabricated for characterization. For the W bottom electrode based devices, switching was ob- served for voltages in the range of 500mV and current value as low as 100 nA showing the electrochemical nature and low power potential. The ON state showed a direct de- pendence on the programming current, showing the possibility of multi-bit storage in a single cell. Room temperature retention was demonstrated in excess of 105 seconds and endurance to approximately 107 cycles. Switching was observed for microsecond duration 3 V amplitude pulses. Material characterization results from Raman, X-ray diffraction, Rutherford backscattering and Secondary-ion mass spectroscopy analysis shows the influence of processing conditions on the Cu concentration within the film and also the presence of Cu as free atoms. The results seemed to indicate stress-induced void formation in the SiO2 matrix as the driving mechanism for Cu diffusion into the SiO2 film. Cu/SiO2
Si based PMC devices were characterized and were shown to have inherent isolation characteristics, proving the feasibility of such a structure for a passive array. The inherent isolation property simplifies fabrication by avoiding the need for a separate diode element in an array. The isolation characteristics were studied mainly in terms of the leakage current. The nature of the diode interface was further studied by extracting a barrier potential which shows it can be approximated to a Cu-nSi metal semiconductor Schottky diode.
ContributorsPuthenthermadam, Sarath (Author) / Kozicki, Michael N (Thesis advisor) / Diaz, Rodolfo (Committee member) / Schroder, Dieter K. (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2011