This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students. 

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Description
Wide Bandgap (WBG) semiconductor materials are shaping day-to-day technologyby introducing powerful and more energy responsible devices. These materials have opened the door for building basic semiconductor devices which are superior in terms of handling high voltages, high currents, power, and temperature which is not possible using conventional silicon technology. As the research continues

Wide Bandgap (WBG) semiconductor materials are shaping day-to-day technologyby introducing powerful and more energy responsible devices. These materials have opened the door for building basic semiconductor devices which are superior in terms of handling high voltages, high currents, power, and temperature which is not possible using conventional silicon technology. As the research continues in the field of WBG based devices, there is a potential chance that the power electronics industry can save billions of dollars deploying energy-efficient circuits in high power conversion electronics. Diamond, silicon carbide and gallium nitride are the top three contenders among which diamond can significantly outmatch others in a variety of properties. However, diamond technology is still in its early phase of development and there are challenges involved in many aspects of processing a successful integrated circuit. The work done in this research addresses three major aspects of problems related to diamond technology. In the first part, the applicability of compact modeling and Technology Computer-Aided Design (TCAD) modeling technique for diamond Schottky p-i-n diodes has been demonstrated. The compact model accurately predicts AC, DC and nonlinear behavior of the diode required for fast circuit simulation. Secondly, achieving low resistance ohmic contact onto n-type diamond is one of the major issues that is still an open research problem as it determines the performance of high-power RF circuits and switching losses in power converters circuits. So, another portion of this thesis demonstrates the achievement of very low resistance ohmic contact (~ 10-4 Ω⋅cm2) onto n-type diamond using nano crystalline carbon interface layer. Using the developed TCAD and compact models for low resistance contacts, circuit level predictions show improvements in RF performance. Lastly, an initial study of breakdown characteristics of diamond and cubic boron nitride heterostructure is presented. This study serves as a first step for making future transistors using diamond and cubic boron nitride – a very less explored material system in literature yet promising for extreme circuit applications involving high power and temperature.
ContributorsJHA, VISHAL (Author) / Thornton, Trevor (Thesis advisor) / Goodnick, Stephen (Committee member) / Nemanich, Robert (Committee member) / Alford, Terry (Committee member) / Hoque, Mazhar (Committee member) / Arizona State University (Publisher)
Created2023
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Description
Collective cell migration in the 3D fibrous extracellular matrix (ECM) is crucial to many physiological and pathological processes such as tissue regeneration, immune response and cancer progression. A migrating cell also generates active pulling forces, which are transmitted to the ECM fibers via focal adhesion complexes. Such active forces consistently

Collective cell migration in the 3D fibrous extracellular matrix (ECM) is crucial to many physiological and pathological processes such as tissue regeneration, immune response and cancer progression. A migrating cell also generates active pulling forces, which are transmitted to the ECM fibers via focal adhesion complexes. Such active forces consistently remodel the local ECM (e.g., by re-orienting the collagen fibers, forming fiber bundles and increasing the local stiffness of ECM), leading to a dynamically evolving force network in the system that in turn regulates the collective migration of cells.

In this work, this novel mechanotaxis mechanism is investigated, i.e., the role of the ECM mediated active cellular force propagation in coordinating collective cell migration via computational modeling and simulations. The work mainly includes two components: (i) microstructure and micromechanics modeling of cellularized ECM (collagen) networks and (ii) modeling collective cell migration and self-organization in 3D ECM. For ECM modeling, a procedure for generating realizations of highly heterogeneous 3D collagen networks with prescribed microstructural statistics via stochastic optimization is devised. Analysis shows that oriented fibers can significantly enhance long-range force transmission in the network. For modeling collective migratory behaviors of the cells, a minimal active-particle-on-network (APN) model is developed, in which reveals a dynamic transition in the system as the particle number density ρ increases beyond a critical value ρc, from an absorbing state in which the particles segregate into small isolated stationary clusters, to a dynamic state in which the majority of the particles join in a single large cluster undergone constant dynamic reorganization. The results, which are consistent with independent experimental results, suggest a robust mechanism based on ECM-mediated mechanical coupling for collective cell behaviors in 3D ECM.

For the future plan, further substantiate the minimal cell migration model by incorporating more detailed cell-ECM interactions and relevant sub-cellular mechanisms is needed, as well as further investigation of the effects of fiber alignment, ECM mechanical properties and externally applied mechanical cues on collective migration dynamics.
ContributorsNan, Hanqing (Author) / Jiao, Yang (Thesis advisor) / Alford, Terry (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2019
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Description
Nanoholes on the basal plane of graphene can provide abundant mass transport channels and chemically active sites for enhancing the electrochemical performance, making this material highly promising in applications such as supercapacitors, batteries, desalination, molecule or ion detection, and biosensing. However, the current solution-based chemical etching processes to manufacture these

Nanoholes on the basal plane of graphene can provide abundant mass transport channels and chemically active sites for enhancing the electrochemical performance, making this material highly promising in applications such as supercapacitors, batteries, desalination, molecule or ion detection, and biosensing. However, the current solution-based chemical etching processes to manufacture these nanoholes commonly suffer from low process efficiency, scalability, and controllability, because conventional bulk heating cannot promote the etching reactions. Herein, a novel manufacturing method is developed to address this issue using microwave irradiation to facilitate and control the chemical etching of graphene. In this process, microwave irradiation induces selective heating of graphene in the aqueous solution due to an energy dissipation mechanism coupled with the dielectric and conduction losses. This strategy brings a remarkable reduction of processing time from hour-scale to minute-scale compared to the conventional approaches. By further incorporating microwave pretreatment, it is possible to control the population and area percentage of the in-plane nanoholes on graphene. Theoretical calculations reveal that the nanoholes emerge and grow by a repeating reduction–oxidation process occurring at the edge-sites atoms around vacancy defects on the graphene basal plane. The reduced holey graphene oxide sheets obtained via the microwave-assisted chemical etching method exhibit great potentials in supercapacitors and electrocatalysis. Excellent capacitive performance and electrocatalytic activity are observed in electrochemical measurements. The improvements against the non-holey counterpart are attributed to the enhanced kinetics involving ion diffusion and heterogeneous charge transfer.
ContributorsWang, Dini (Author) / Nian, Qiong (Thesis advisor) / Alford, Terry (Committee member) / Wang, Qing Hua (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2021