Theses and dissertations

This collection includes both ASU Theses and Dissertations, submitted by graduate students, and the Barrett, Honors College theses submitted by undergraduate students. 

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High Efficiency Electronics for Space Applications

Description
The Metal Semiconductor Field Effect Transistor (MESFET) has high potential to enter analog and RF applications due to their high breakdown voltage and switching frequency characteristics. These MESFET devices could allow for high voltage analog circuits to be integrated with low voltage digital circuits on a single chip in an…

The Metal Semiconductor Field Effect Transistor (MESFET) has high potential to enter analog and RF applications due to their high breakdown voltage and switching frequency characteristics. These MESFET devices could allow for high voltage analog circuits to be integrated with low voltage digital circuits on a single chip in an extremely cost effective way. Higher integration leads to electronics with increased functionality and a smaller finished product. The MESFETs are designed in-house by the research group led by Dr. Trevor Thornton. The layouts are then sent to multi-project wafer (MPW) integrated circuit foundry companies, such as the Metal Oxide Semiconductor Implementation Service (MOSIS) to be fabricated. Once returned, the electrical characteristics of the devices are measured. The MESFET has been implemented in various applications by the research group, including the low dropout linear regulator (LDO) and RF power amplifier. An advantage of the MESFET is that it can function in extreme environments such as space, allowing for complex electrical systems to continue functioning properly where traditional transistors would fail.
ContributorsKam, Jason (Author) / Thornton, Trevor (Thesis director) / Goryll, Michael (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2015-05
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Optical Characterization of Band Gaps for Sulfide-based Chalcogenide and Copper Oxide Thin Films

Description
The purpose of this research is to optically characterize the band gaps of sulfide-based chalcogenides and copper oxide thin films. The analysis on the copper oxide thin films will view the effects of various annealing temperatures and the analysis of the chalcogenides will view the effects of silver doping on…

The purpose of this research is to optically characterize the band gaps of sulfide-based chalcogenides and copper oxide thin films. The analysis on the copper oxide thin films will view the effects of various annealing temperatures and the analysis of the chalcogenides will view the effects of silver doping on the thin films. Using UV-Vis spectroscopy, parameters such as the absorption coefficient and determined which then provide details on the optical band gaps of these various semiconductors. With a better understanding of the bandgap of these materials, the behavior can be better predicted in fields of nanoionics and photonics.
ContributorsArora, Rajat Anmol (Author) / Gonzalez Velo, Yago (Thesis director) / Kozicki, Michael (Committee member) / Electrical Engineering Program (Contributor, Contributor) / Barrett, The Honors College (Contributor)
Created2020-12