ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 72
Description
Microelectronic industry is continuously moving in a trend requiring smaller and smaller devices and reduced form factors with time, resulting in new challenges. Reduction in device and interconnect solder bump sizes has led to increased current density in these small solders. Higher level of electromigration occurring due to increased current density is of great concern affecting the reliability of the entire microelectronics systems. This paper reviews electromigration in Pb- free solders, focusing specifically on Sn0.7wt.% Cu solder joints. Effect of texture, grain orientation, and grain-boundary misorientation angle on electromigration and intermetallic compound (IMC) formation is studied through EBSD analysis performed on actual C4 bumps.
ContributorsLara, Leticia (Author) / Tasooji, Amaneh (Thesis advisor) / Lee, Kyuoh (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2013
Description
This thesis addresses the issue of making an economic case for energy storage in power systems. Bulk energy storage has often been suggested for large scale electric power systems in order to levelize load; store energy when it is inexpensive and discharge energy when it is expensive; potentially defer transmission and generation expansion; and provide for generation reserve margins. As renewable energy resource penetration increases, the uncertainty and variability of wind and solar may be alleviated by bulk energy storage technologies. The quadratic programming function in MATLAB is used to simulate an economic dispatch that includes energy storage. A program is created that utilizes quadratic programming to analyze various cases using a 2010 summer peak load from the Arizona transmission system, part of the Western Electricity Coordinating Council (WECC). The MATLAB program is used first to test the Arizona test bed with a low level of energy storage to study how the storage power limit effects several optimization out-puts such as the system wide operating costs. Very high levels of energy storage are then added to see how high level energy storage affects peak shaving, load factor, and other system applications. Finally, various constraint relaxations are made to analyze why the applications tested eventually approach a constant value. This research illustrates the use of energy storage which helps minimize the system wide generator operating cost by "shaving" energy off of the peak demand.
ContributorsRuggiero, John (Author) / Heydt, Gerald T (Thesis advisor) / Datta, Rajib (Committee member) / Karady, George G. (Committee member) / Arizona State University (Publisher)
Created2013
Description
Underground cables have been widely used in big cities. This is because underground cables offer the benefits of reducing visual impact and the disturbance caused by bad weather (wind, ice, snow, and the lightning strikes). Additionally, when placing power lines underground, the maintenance costs can also be reduced as a result. The underground cable rating calculation is the most critical part of designing the cable construction and cable installation. In this thesis, three contributions regarding the cable ampacity study have been made. First, an analytical method for rating of underground cables has been presented. Second, this research also develops the steady state and transient ratings for Salt River Project (SRP) 69 kV underground system using the commercial software CYMCAP for several typical substations. Third, to find an alternative way to predict the cable ratings, three regression models have been built. The residual plot and mean square error for the three methods have been analyzed. The conclusion is dawn that the nonlinear regression model provides the sufficient accuracy of the cable rating prediction for SRP's typical installation.
ContributorsWang, Tong (Author) / Tylavsky, Daniel (Thesis advisor) / Karady, George G. (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2013
Description
Rapid processing and reduced end-of-range diffusion effects demonstrate that susceptor-assisted microwave annealing is an efficient processing alternative for electrically activating dopants and removing ion-implantation damage in ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Raman spectroscopy and ion channeling analysis monitor the extent of ion implantation damage and recrystallization. The presence of damage and defects in ion implanted silicon, and the reduction of the defects as a result of annealing, is observed by Rutherford backscattering spectrometry, moreover, the boron implanted silicon is further investigated by cross-section transmission electron microscopy. When annealing B+ implanted silicon, the dissolution of small extended defects and growth of large extended defects result in reduced crystalline quality that hinders the electrical activation process. Compared to B+ implanted silicon, phosphorus implanted samples experience more effective activation and achieve better crystalline quality. Comparison of end-of-range dopants diffusion resulting from microwave annealing and rapid thermal annealing (RTA) is done using secondary ion mass spectroscopy. Results from microwave annealed P+ implanted samples show that almost no diffusion occurs during time periods required for complete dopant activation and silicon recrystallization. The relative contributions to heating of the sample, by a SiC susceptor, and by Si self-heating in the microwave anneal, were also investigated. At first 20s, the main contributor to the sample's temperature rise is Si self-heating by microwave absorption.
ContributorsZhao, Zhao (Author) / Alford, Terry Lynn (Thesis advisor) / Theodore, David (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2013
Description
This thesis work mainly examined the stability and reliability issues of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors under bias-illumination stress. Amorphous hydrogenated silicon has been the dominating material used in thin film transistors as a channel layer. However with the advent of modern high performance display technologies, it is required to have devices with better current carrying capability and better reproducibility. This brings the idea of new material for channel layer of these devices. Researchers have tried poly silicon materials, organic materials and amorphous mixed oxide materials as a replacement to conventional amorphous silicon layer. Due to its low price and easy manufacturing process, amorphous mixed oxide thin film transistors have become a viable option to replace the conventional ones in order to achieve high performance display circuits. But with new materials emerging, comes the challenge of reliability and stability issues associated with it. Performance measurement under bias stress and bias-illumination stress have been reported previously. This work proposes novel post processing low temperature long time annealing in optimum ambient in order to annihilate or reduce the defects and vacancies associated with amorphous material which lead to the instability or even the failure of the devices. Thin film transistors of a-IGZO has been tested for standalone illumination stress and bias-illumination stress before and after annealing. HP 4155B semiconductor parameter analyzer has been used to stress the devices and measure the output characteristics and transfer characteristics of the devices. Extra attention has been given about the effect of forming gas annealing on a-IGZO thin film. a-IGZO thin film deposited on silicon substrate has been tested for resistivity, mobility and carrier concentration before and after annealing in various ambient. Elastic Recoil Detection has been performed on the films to measure the amount of hydrogen atoms present in the film. Moreover, the circuit parameters of the thin film transistors has been extracted to verify the physical phenomenon responsible for the instability and failure of the devices. Parameters like channel resistance, carrier mobility, power factor has been extracted and variation of these parameters has been observed before and after the stress.
ContributorsRuhul Hasin, Muhammad (Author) / Alford, Terry L. (Thesis advisor) / Krause, Stephen (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2013
Description
This thesis concerns the flashover issue of the substation insulators operating in a polluted environment. The outdoor insulation equipment used in the power delivery infrastructure encounter different types of pollutants due to varied environmental conditions. Various methods have been developed by manufacturers and researchers to mitigate the flashover problem. The application of Room Temperature Vulcanized (RTV) silicone rubber is one such favorable method as it can be applied over the already installed units. Field experience has already showed that the RTV silicone rubber coated insulators have a lower flashover probability than the uncoated insulators. The scope of this research is to quantify the improvement in the flashover performance. Artificial contamination tests were carried on station post insulators for assessing their performance. A factorial experiment design was used to model the flashover performance. The formulation included the severity of contamination and leakage distance of the insulator samples. Regression analysis was used to develop a mathematical model from the data obtained from the experiments. The main conclusion drawn from the study is that the RTV coated insulators withstood much higher levels of contamination even when the coating had lost its hydrophobicity. This improvement in flashover performance was found to be in the range of 20-40%. A much better flashover performance was observed when the coating recovered its hydrophobicity. It was also seen that the adhesion of coating was excellent even after many tests which involved substantial discharge activity.
ContributorsGholap, Vipul (Author) / Gorur, Ravi S (Thesis advisor) / Karady, George G. (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2013
Description
III-Nitride nanostructures have been an active area of research recently due to their ability to tune their optoelectronic properties. Thus far work has been done on InGaN quantum dots, nanowires, nanopillars, amongst other structures, but this research reports the creation of a new type of InGaN nanostructure, nanorings. Hexagonal InGaN nanorings were formed using Metal Organic Chemical Vapor Deposition through droplet epitaxy. The nanorings were thoroughly analyzed using x-ray diffraction, photoluminescence, electron microscopy, electron diffraction, and atomic force microscopy. Nanorings with high indium incorporation were achieved with indium content up to 50% that was then controlled using the growth time, temperature, In/Ga ratio and III/N ratio. The analysis showed that the nanoring shape is able to incorporate more indium than other nanostructures, due to the relaxing mechanism involved in the formation of the nanoring. The ideal conditions were determined to be growth of 30 second droplets with a growth time of 1 minute 30 seconds at 770 C to achieve the most well developed rings with the highest indium concentration.
ContributorsZaidi, Zohair (Author) / Mahajan, Subhash (Thesis advisor) / O'Connell, Michael J (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2012
Description
Zinc oxide (ZnO) has attracted much interest during last decades as a functional material. Furthermore, ZnO is a potential material for transparent conducting oxide material competing with indium tin oxide (ITO), graphene, and carbon nanotube film. It has been known as a conductive material when doped with elements such as indium, gallium and aluminum. The solubility of those dopant elements in ZnO is still debatable; but, it is necessary to find alternative conducting materials when their form is film or nanostructure for display devices. This is a consequence of the ever increasing price of indium. In addition, a new generation solar cell (nanostructured or hybrid photovoltaics) requires compatible materials which are capable of free standing on substrates without seed or buffer layers and have the ability introduce electrons or holes pathway without blocking towards electrodes. The nanostructures for solar cells using inorganic materials such as silicon (Si), titanium oxide (TiO2), and ZnO have been an interesting topic for research in solar cell community in order to overcome the limitation of efficiency for organic solar cells. This dissertation is a study of the rational solution-based synthesis of 1-dimentional ZnO nanomaterial and its solar cell applications. These results have implications in cost effective and uniform nanomanufacturing for the next generation solar cells application by controlling growth condition and by doping transition metal element in solution.
ContributorsChoi, Hyung Woo (Author) / Alford, Terry L. (Thesis advisor) / Krause, Stephen (Committee member) / Theodore, N. David (Committee member) / Arizona State University (Publisher)
Created2012
Description
Ball Grid Array (BGA) using lead-free or lead-rich solder materials are widely used as Second Level Interconnects (SLI) in mounting packaged components to the printed circuit board (PCB). The reliability of these solder joints is of significant importance to the performance of microelectronics components and systems. Product design/form-factor, solder material, manufacturing process, use condition, as well as, the inherent variabilities present in the system, greatly influence product reliability. Accurate reliability analysis requires an integrated approach to concurrently account for all these factors and their synergistic effects. Such an integrated and robust methodology can be used in design and development of new and advanced microelectronics systems and can provide significant improvement in cycle-time, cost, and reliability. IMPRPK approach is based on a probabilistic methodology, focusing on three major tasks of (1) Characterization of BGA solder joints to identify failure mechanisms and obtain statistical data, (2) Finite Element analysis (FEM) to predict system response needed for life prediction, and (3) development of a probabilistic methodology to predict the reliability, as well as, the sensitivity of the system to various parameters and the variabilities. These tasks and the predictive capabilities of IMPRPK in microelectronic reliability analysis are discussed.
ContributorsFallah-Adl, Ali (Author) / Tasooji, Amaneh (Thesis advisor) / Krause, Stephen (Committee member) / Alford, Terry (Committee member) / Jiang, Hanqing (Committee member) / Mahajan, Ravi (Committee member) / Arizona State University (Publisher)
Created2013
Description
Renewable portfolio standards prescribe for penetration of high amounts of re-newable energy sources (RES) that may change the structure of existing power systems. The load growth and changes in power flow caused by RES integration may result in re-quirements of new available transmission capabilities and upgrades of existing transmis-sion paths. Construction difficulties of new transmission lines can become a problem in certain locations. The increase of transmission line thermal ratings by reconductoring using High Temperature Low Sag (HTLS) conductors is a comparatively new technology introduced to transmission expansion. A special design permits HTLS conductors to operate at high temperatures (e.g., 200oC), thereby allowing passage of higher current. The higher temperature capability increases the steady state and emergency thermal ratings of the transmission line. The main disadvantage of HTLS technology is high cost. The high cost may place special emphasis on a thorough analysis of cost to benefit of HTLS technology im-plementation. Increased transmission losses in HTLS conductors due to higher current may be a disadvantage that can reduce the attractiveness of this method. Studies described in this thesis evaluate the expenditures for transmission line re-conductoring using HTLS and the consequent benefits obtained from the potential decrease in operating cost for thermally limited transmission systems. Studies performed consider the load growth and penetration of distributed renewable energy sources according to the renewable portfolio standards for power systems. An evaluation of payback period is suggested to assess the cost to benefit ratio of HTLS upgrades. The thesis also considers the probabilistic nature of transmission upgrades. The well-known Chebyshev inequality is discussed with an application to transmission up-grades. The Chebyshev inequality is proposed to calculate minimum payback period ob-tained from the upgrades of certain transmission lines. The cost to benefit evaluation of HTLS upgrades is performed using a 225 bus equivalent of the 2012 summer peak Arizona portion of the Western Electricity Coordi-nating Council (WECC).
ContributorsTokombayev, Askhat (Author) / Heydt, Gerald T. (Thesis advisor) / Sankar, Lalitha (Committee member) / Karady, George G. (Committee member) / Arizona State University (Publisher)
Created2014