ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Electrical characterization of SJMOS devices showed substantial decrease in threshold voltage and increase in leakage current due to TID. Therefore, as a solution to improve the TID tolerance, metal-nitride-oxide-semiconductor (MNOS) capacitors with different oxide
itride thickness combinations were fabricated and irradiated using a Co-60 gamma-source. Electrical characterization showed all samples with oxide
itride stack gate insulators exhibited significantly higher tolerance to irradiation when compared to metal-oxide-semiconductor capacitors.
Heavy ion testing of the SJMOS showed the device failed due to SEB and SEGR at 10% of maximum rated bias values. In this work, a 600V SJMOS structure is designed that is tolerant to both SEB and SEGR. In a SJMOS with planar gate, reducing the neck width improves the tolerance to SEGR but significantly changes the device electrical characteristics. The trench gate SJ device design is shown to overcome this problem. A buffer layer and larger P+-plug are added to the trench gate SJ power transistor to improve SEB tolerance. Using TCAD simulations, the proposed trench gate structure and the tested planar gate SJMOS are compared. The simulation results showed that the SEB and SEGR hardness in the proposed structure has improved by a factor of 10 and passes at the device’s maximum rated bias value with improved electrical performance.
The thesis explains in detail how the system with 11% of IRG operated before conducting any adjustments (addition of IRG) and what procedures were modified to make the system run correctly. The adjustments made to the dynamic models are also explained in depth to give a clearer picture of how each adjustment affects the system performance. A list of proposed IRG units along with their locations were provided by SRP, a power utility in Arizona, which were to be integrated into the power flow and dynamic files. In the process of finding the maximum IRG penetration threshold, three sensitivities were also considered, namely, momentary cessation due to low voltages, transmission vs. distribution connected solar generation, and stalling of induction motors. Finally, the thesis discusses how the system reacts to the aforementioned modifications, and how IRG penetration threshold gets adjusted with regards to the different sensitivities applied to the system.
The method to do so revolved around the concept of building large-area sensor arrays. By covering a large area, we can increase the probability of detection and gather more data to build a more complete and clearer view of the environment. Large-area circuitry can be achieved cost-effectively by leveraging the thin-film transistor process of the display industry. With production of displays increasing with the explosion of mobile devices and continued growth in sales of flat panel monitors and television, the cost to build a unit continues to decrease.
Using a thin-film process also allows for flexible electronics, which could be taken advantage of in-house at the Flexible Electronics and Display Center. Flexible electronics implies new form factors and applications that would not otherwise be possible with their single crystal counterparts. To be able to effectively use thin-film technology, novel ways of overcoming the drawbacks of the thin-film process, namely the lower performance scale.
The two deliverable devices that underwent development are a preamplifier used in an active pixel sensor for neutron detection and a passive electric field imaging array. This thesis will cover the theory and process behind realizing these devices.