ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 77
Description
A proposed visible spectrum nanoscale imaging method requires material with permittivity values much larger than those available in real world materials to shrink the visible wavelength to attain the desired resolution. It has been proposed that the extraordinarily slow propagation experienced by light guided along plasmon resonant structures is a viable approach to obtaining these short wavelengths. To assess the feasibility of such a system, an effective medium model of a chain of Noble metal plasmonic nanospheres is developed, leading to a straightforward calculation of the waveguiding properties. Evaluation of other models for such structures that have appeared in the literature, including an eigenvalue problem nearest neighbor approximation, a multi- neighbor approximation with retardation, and a method-of-moments method for a finite chain, show conflicting expectations of such a structure. In particular, recent publications suggest the possibility of regions of invalidity for eigenvalue problem solutions that are considered far below the onset of guidance, and for solutions that assume the loss is low enough to justify perturbation approximations. Even the published method-of-moments approach suffers from an unjustified assumption in the original interpretation, leading to overly optimistic estimations of the attenuation of the plasmon guided wave. In this work it is shown that the method of moments approach solution was dominated by the radiation from the source dipole, and not the waveguiding behavior claimed. If this dipolar radiation is removed the remaining fields ought to contain the desired guided wave information. Using a Prony's-method-based algorithm the dispersion properties of the chain of spheres are assessed at two frequencies, and shown to be dramatically different from the optimistic expectations in much of the literature. A reliable alternative to these models is to replace the chain of spheres with an effective medium model, thus mapping the chain problem into the well-known problem of the dielectric rod. The solution of the Green function problem for excitation of the symmetric longitudinal mode (TM01) is performed by numerical integration. Using this method the frequency ranges over which the rod guides and the associated attenuation are clearly seen. The effective medium model readily allows for variation of the sphere size and separation, and can be taken to the limit where instead of a chain of spheres we have a solid Noble metal rod. This latter case turns out to be the optimal for minimizing the attenuation of the guided wave. Future work is proposed to simulate the chain of photonic nanospheres and the nanowire using finite-difference time-domain to verify observed guided behavior in the Green's function method devised in this thesis and to simulate the proposed nanosensing devices.
ContributorsHale, Paul (Author) / Diaz, Rodolfo E (Thesis advisor) / Goodnick, Stephen (Committee member) / Aberle, James T., 1961- (Committee member) / Palais, Joseph (Committee member) / Arizona State University (Publisher)
Created2013
Description
Many manmade chemicals used in consumer products are ultimately washed down the drain and are collected in municipal sewers. Efficient chemical monitoring at wastewater treatment (WWT) plants thus may provide up-to-date information on chemical usage rates for epidemiological assessments. The objective of the present study was to extrapolate this concept, termed 'sewage epidemiology', to include municipal sewage sludge (MSS) in identifying and prioritizing contaminants of emerging concern (CECs). To test this the following specific aims were defined: i) to screen and identify CECs in nationally representative samples of MSS and to provide nationwide inventories of CECs in U.S. MSS; ii) to investigate the fate and persistence in MSS-amended soils, of sludge-borne hydrophobic CECs; and iii) to develop an analytical tool relying on contaminant levels in MSS as an indicator for identifying and prioritizing hydrophobic CECs. Chemicals that are primarily discharged to the sewage systems (alkylphenol surfactants) and widespread persistent organohalogen pollutants (perfluorochemicals and brominated flame retardants) were analyzed in nationally representative MSS samples. A meta-analysis showed that CECs contribute about 0.04-0.15% to the total dry mass of MSS, a mass equivalent of 2,700-7,900 metric tonnes of chemicals annually. An analysis of archived mesocoms from a sludge weathering study showed that 64 CECs persisted in MSS/soil mixtures over the course of the experiment, with half-lives ranging between 224 and >990 days; these results suggest an inherent persistence of CECs that accumulate in MSS. A comparison of the spectrum of chemicals (n=52) analyzed in nationally representative biological specimens from humans and MSS revealed 70% overlap. This observed co-occurrence of contaminants in both matrices suggests that MSS may serve as an indicator for ongoing human exposures and body burdens of pollutants in humans. In conclusion, I posit that this novel approach in sewage epidemiology may serve to pre-screen and prioritize the several thousands of known or suspected CECs to identify those that are most prone to pose a risk to human health and the environment.
ContributorsVenkatesan, Arjunkrishna (Author) / Halden, Rolf U. (Thesis advisor) / Westerhoff, Paul (Committee member) / Fox, Peter (Committee member) / Arizona State University (Publisher)
Created2013
Description
GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices. Self-heating issues with GaN HEMT and lack of understanding of various phenomena are hindering their widespread commercial development. There is a need to understand device operation by developing a model which could be used to optimize electrical and thermal characteristics of GaN HEMT design for high power and high frequency operation. In this thesis work a physical simulation model of AlGaN/GaN HEMT is developed using commercially available software ATLAS from SILVACO Int. based on the energy balance/hydrodynamic carrier transport equations. The model is calibrated against experimental data. Transfer and output characteristics are the key focus in the analysis along with saturation drain current. The resultant IV curves showed a close correspondence with experimental results. Various combinations of electron mobility, velocity saturation, momentum and energy relaxation times and gate work functions were attempted to improve IV curve correlation. Thermal effects were also investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of GaN HEMTs. The temperature profiles across the device were observed. Hot spots were found along the channel in the gate-drain spacing. These preliminary results indicate that the thermal effects do have an impact on the electrical device characteristics at large biases even though the amount of self-heating is underestimated with respect to thermal particle-based simulations that solve the energy balance equations for acoustic and optical phonons as well (thus take proper account of the formation of the hot-spot). The decrease in drain current is due to decrease in saturation carrier velocity. The necessity of including hydrodynamic/energy balance transport models for accurate simulations is demonstrated. Possible ways for improving model accuracy are discussed in conjunction with future research.
ContributorsChowdhury, Towhid (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Urban water systems face sustainability challenges ranging from water quality, leaks, over-use, energy consumption, and long-term supply concerns. Resiliency challenges include the capacity to respond to drought, managing pipe deterioration, responding to natural disasters, and preventing terrorism. One strategy to enhance sustainability and resiliency is the development and adoption of smart water grids. A smart water grid incorporates networked monitoring and control devices into its structure, which provides diverse, real-time information about the system, as well as enhanced control. Data provide input for modeling and analysis, which informs control decisions, allowing for improvement in sustainability and resiliency. While smart water grids hold much potential, there are also potential tradeoffs and adoption challenges. More publicly available cost-benefit analyses are needed, as well as system-level research and application, rather than the current focus on individual technologies. This thesis seeks to fill one of these gaps by analyzing the cost and environmental benefits of smart irrigation controllers. Smart irrigation controllers can save water by adapting watering schedules to climate and soil conditions. The potential benefit of smart irrigation controllers is particularly high in southwestern U.S. states, where the arid climate makes water scarcer and increases watering needs of landscapes. To inform the technology development process, a design for environment (DfE) method was developed, which overlays economic and environmental performance parameters under different operating conditions. This method is applied to characterize design goals for controller price and water savings that smart irrigation controllers must meet to yield life cycle carbon dioxide reductions and economic savings in southwestern U.S. states, accounting for regional variability in electricity and water prices and carbon overhead. Results from applying the model to smart irrigation controllers in the Southwest suggest that some areas are significantly easier to design for.
ContributorsMutchek, Michele (Author) / Allenby, Braden (Thesis advisor) / Williams, Eric (Committee member) / Westerhoff, Paul (Committee member) / Arizona State University (Publisher)
Created2012
Description
High electron mobility transistors (HEMTs) based on Group III-nitride heterostructures have been characterized by advanced electron microscopy methods including off-axis electron holography, nanoscale chemical analysis, and electrical measurements, as well as other techniques. The dissertation was organized primarily into three topical areas: (1) characterization of near-gate defects in electrically stressed AlGaN/GaN HEMTs, (2) microstructural and chemical analysis of the gate/buffer interface of AlN/GaN HEMTs, and (3) studies of the impact of laser-liftoff processing on AlGaN/GaN HEMTs. The electrical performance of stressed AlGaN/GaN HEMTs was measured and the devices binned accordingly. Source- and drain-side degraded, undegraded, and unstressed devices were then prepared via focused-ion-beam milling for examination. Defects in the near-gate region were identified and their correlation to electrical measurements analyzed. Increased gate leakage after electrical stressing is typically attributed to "V"-shaped defects at the gate edge. However, strong evidence was found for gate metal diffusion into the barrier layer as another contributing factor. AlN/GaN HEMTs grown on sapphire substrates were found to have high electrical performance which is attributed to the AlN barrier layer, and robust ohmic and gate contact processes. TEM analysis identified oxidation at the gate metal/AlN buffer layer interface. This thin a-oxide gate insulator was further characterized by energy-dispersive x-ray spectroscopy and energy-filtered TEM. Attributed to this previously unidentified layer, high reverse gate bias up to −30 V was demonstrated and drain-induced gate leakage was suppressed to values of less than 10−6 A/mm. In addition, extrinsic gm and ft * LG were improved to the highest reported values for AlN/GaN HEMTs fabricated on sapphire substrates. Laser-liftoff (LLO) processing was used to separate the active layers from sapphire substrates for several GaN-based HEMT devices, including AlGaN/GaN and InAlN/GaN heterostructures. Warpage of the LLO samples resulted from relaxation of the as-grown strain and strain arising from dielectric and metal depositions, and this strain was quantified by both Newton's rings and Raman spectroscopy methods. TEM analysis demonstrated that the LLO processing produced no detrimental effects on the quality of the epitaxial layers. TEM micrographs showed no evidence of either damage to the ~2 μm GaN epilayer generated threading defects.
ContributorsJohnson, Michael R. (Author) / Mccartney, Martha R (Thesis advisor) / Smith, David J. (Committee member) / Goodnick, Stephen (Committee member) / Shumway, John (Committee member) / Chen, Tingyong (Committee member) / Arizona State University (Publisher)
Created2012
Description
The goal of this research work is to develop a particle-based device simulator for modeling strained silicon devices. Two separate modules had to be developed for that purpose: A generic bulk Monte Carlo simulation code which in the long-time limit solves the Boltzmann transport equation for electrons; and an extension to this code that solves for the bulk properties of strained silicon. One scattering table is needed for conventional silicon, whereas, because of the strain breaking the symmetry of the system, three scattering tables are needed for modeling strained silicon material. Simulation results for the average drift velocity and the average electron energy are in close agreement with published data. A Monte Carlo device simulation tool has also been employed to integrate the effects of self-heating into device simulation for Silicon on Insulator devices. The effects of different types of materials for buried oxide layers have been studied. Sapphire, Aluminum Nitride (AlN), Silicon dioxide (SiO2) and Diamond have been used as target materials of interest in the analysis and the effects of varying insulator layer thickness have also been investigated. It was observed that although AlN exhibits the best isothermal behavior, diamond is the best choice when thermal effects are accounted for.
ContributorsQazi, Suleman (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Tao, Meng (Committee member) / Arizona State University (Publisher)
Created2013
Description
GaAs-based solar cells have attracted much interest because of their high conversion efficiencies of ~28% under one sun illumination. The main carrier recombination mechanisms in the GaAs-based solar cells are surface recombination, radiative recombination and non-radiative recombination. Photon recycling reduces the effect of radiative recombination and is an approach to obtain the device performance described by detailed balance theory. The photon recycling model has been developed and was applied to investigate the loss mechanisms in the state-of-the-art GaAs-based solar cell structures using PC1D software. A standard fabrication process of the GaAs-based solar cells is as follows: wafer preparation, individual cell isolation by mesa, n- and p-type metallization, rapid thermal annealing (RTA), cap layer etching, and anti-reflection coating (ARC). The growth rate for GaAs-based materials is one of critical factors to determine the cost for the growth of GaAs-based solar cells. The cost for fabricating GaAs-based solar cells can be reduced if the growth rate is increased without degrading the crystalline quality. The solar cell wafers grown at different growth rates of 14 μm/hour and 55 μm/hour were discussed in this work. The structural properties of the wafers were characterized by X-ray diffraction (XRD) to identify the crystalline quality, and then the as-grown wafers were fabricated into solar cell devices under the same process conditions. The optical and electrical properties such as surface reflection, external quantum efficiency (EQE), dark I-V, Suns-Voc, and illuminated I-V under one sun using a solar simulator were measured to compare the performances of the solar cells with different growth rates. Some simulations in PC1D have been demonstrated to investigate the reasons of the different device performances between fast growth and slow growth structures. A further analysis of the minority carrier lifetime is needed to investigate into the difference in device performances.
ContributorsZhang, Chaomin (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / Faleev, Nikolai (Committee member) / Arizona State University (Publisher)
Created2014
Description
Hydrocarbon spill site cleanup is challenging when contaminants are present in lower permeability layers. These are difficult to remediate and may result in long-term groundwater impacts. The research goal is to investigate strategies for long-term reduction of contaminant emissions from sources in low permeability layers through partial source treatment at higher/lower permeability interfaces. Conceptually, this provides a clean/reduced concentration zone near the interface, and consequently a reduced concentration gradient and flux from the lower permeability layer. Treatment by in-situ chemical oxidation (ISCO) was evaluated using hydrogen peroxide (H2O2) and sodium persulfate (Na2S2O8). H2O2 studies included lab and field-scale distribution studies and lab emission reduction experiments. The reaction rate of H2O2 in soils was so fast it did not travel far (<1 m) from delivery points under typical flow conditions. Oxygen gas generated and partially trapped in soil pores served as a dissolved oxygen (DO) source for >60 days in field and lab studies. During that period, the laboratory studies had reduced hydrocarbon impacts, presumably from aerobic biodegradation, which rebounded once the O2 source depleted. Therefore field monitoring should extend beyond the post-treatment elevated DO. Na2S2O8 use was studied in two-dimensional tanks (122-cm tall, 122-cm wide, and 5-cm thick) containing two contrasting permeability layers (three orders of magnitude difference). The lower permeability layer initially contained a dissolved-sorbed contaminant source throughout this layer, or a 10-cm thick non-aqueous phase liquid (NAPL)-impacted zone below the higher/lower permeability interface. The dissolved-sorbed source tank was actively treated for 14 d. Two hundred days after treatment, the emission reduction of benzene, toluene, ethylbenzene, and p-xylene (BTEX) were 95-99% and methyl tert-butyl ether (MTBE) was 63%. The LNAPL-source tank had three Na2S2O8 and two sodium hydroxide (NaOH) applications for S2O82- base activation. The resulting emission reductions for BTEX, n-propylbenzene, and 1,3,5 trymethylbenzene were 55-73%. While less effective at reducing emissions from LNAPL sources, the 14-d treatment delivered sufficient S2O82- though diffusion to remediate BTEX from the 60 cm dissolved-sorbed source. The overall S2O82- utilization in the dissolved source experiment was calculated by mass balance to be 108-125 g S2O82-/g hydrocarbon treated.
ContributorsCavanagh, Bridget (Author) / Johnson, Paul C (Thesis advisor) / Westerhoff, Paul (Committee member) / Kavazanjian, Edward (Committee member) / Bruce, Cristin (Committee member) / Arizona State University (Publisher)
Created2014
Description
Increasing the conversion efficiencies of photovoltaic (PV) cells beyond the single junction theoretical limit is the driving force behind much of third generation solar cell research. Over the last half century, the experimental conversion efficiency of both single junction and tandem solar cells has plateaued as manufacturers and researchers have optimized various materials and structures. While existing materials and technologies have remarkably good conversion efficiencies, they are approaching their own limits. For example, tandem solar cells are currently well developed commercially but further improvements through increasing the number of junctions struggle with various issues related to material interfacial defects. Thus, there is a need for novel theoretical and experimental approaches leading to new third generation cell structures. Multiple exciton generation (MEG) and intermediate band (IB) solar cells have been proposed as third generation alternatives and theoretical modeling suggests they can surpass the detailed balance efficiency limits of single junction and tandem solar cells. MEG or IB solar cell has a variety of advantages enabling the use of low bandgap materials. Integrating MEG and IB with other cell types to make novel solar cells (such as MEG with tandem, IB with tandem or MEG with IB) potentially offers improvements by employing multi-physics effects in one device. This hybrid solar cell should improve the properties of conventional solar cells with a reduced number of junction, increased light-generated current and extended material selections. These multi-physics effects in hybrid solar cells can be achieved through the use of nanostructures taking advantage of the carrier confinement while using existing solar cell materials with excellent characteristics. This reduces the additional cost to develop novel materials and structures. In this dissertation, the author develops thermodynamic models for several novel types of solar cells and uses these models to optimize and compare their properties to those of existing PV cells. The results demonstrate multiple advantages from combining MEG and IB technology with existing solar cell structures.
ContributorsLee, Jongwon (Author) / Honsberg, C. (Christiana B.) (Thesis advisor) / Bowden, Stuart (Committee member) / Roedel, Ronald (Committee member) / Goodnick, Stephen (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2014
Description
This thesis research focuses on developing a single-cell gene expression analysis method for marine diatom Thalassiosira pseudonana and constructing a chip level tool to realize the single cell RT-qPCR analysis. This chip will serve as a conceptual foundation for future deployable ocean monitoring systems. T. pseudonana, which is a common surface water microorganism, was detected in the deep ocean as confirmed by phylogenetic and microbial community functional studies. Six-fold copy number differences between 23S rRNA and 23S rDNA were observed by RT-qPCR, demonstrating the moderate functional activity of detected photosynthetic microbes in the deep ocean including T. pseudonana. Because of the ubiquity of T. pseudonana, it is a good candidate for an early warning system for ocean environmental perturbation monitoring. This early warning system will depend on identifying outlier gene expression at the single-cell level. An early warning system based on single-cell analysis is expected to detect environmental perturbations earlier than population level analysis which can only be observed after a whole community has reacted. Preliminary work using tube-based, two-step RT-qPCR revealed for the first time, gene expression heterogeneity of T. pseudonana under different nutrient conditions. Heterogeneity was revealed by different gene expression activity for individual cells under the same conditions. This single cell analysis showed a skewed, lognormal distribution and helped to find outlier cells. The results indicate that the geometric average becomes more important and representative of the whole population than the arithmetic average. This is in contrast with population level analysis which is limited to arithmetic averages only and highlights the value of single cell analysis. In order to develop a deployable sensor in the ocean, a chip level device was constructed. The chip contains surface-adhering droplets, defined by hydrophilic patterning, that serve as real-time PCR reaction chambers when they are immersed in oil. The chip had demonstrated sensitivities at the single cell level for both DNA and RNA. The successful rate of these chip-based reactions was around 85%. The sensitivity of the chip was equivalent to published microfluidic devices with complicated designs and protocols, but the production process of the chip was simple and the materials were all easily accessible in conventional environmental and/or biology laboratories. On-chip tests provided heterogeneity information about the whole population and were validated by comparing with conventional tube based methods and by p-values analysis. The power of chip-based single-cell analyses were mainly between 65-90% which were acceptable and can be further increased by higher throughput devices. With this chip and single-cell analysis approaches, a new paradigm for robust early warning systems of ocean environmental perturbation is possible.
ContributorsShi, Xu (Author) / Meldrum, Deirdre R. (Thesis advisor) / Zhang, Weiwen (Committee member) / Chao, Shih-hui (Committee member) / Westerhoff, Paul (Committee member) / Arizona State University (Publisher)
Created2013