ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 75
Description
Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1 x 1020 cm-3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonics applications. Er compounds could potentially solve this problem since they contain much higher Er density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor quality of crystals produced by various methods of thin film growth and deposition. This dissertation explores a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl ) in the nanowire form, which facilitates the growth of high quality single crystals. Growth methods for such single crystal ECS nanowires have been established. Various structural and optical characterizations have been carried out. The high crystal quality of ECS material leads to a long lifetime of the first excited state of Er3+ ions up to 1 ms at Er density higher than 1022 cm-3. This Er lifetime-density product was found to be the largest among all Er containing materials. A unique integrating sphere method was developed to measure the absorption cross section of ECS nanowires from 440 to 1580 nm. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement from a single ECS wire. It was estimated that such large signal enhancement can overcome the absorption to result in a net material gain, but not sufficient to compensate waveguide propagation loss. In order to suppress the upconversion process in ECS, Ytterbium (Yb) and Yttrium (Y) ions are introduced as substituent ions of Er in the ECS crystal structure to reduce Er density. While the addition of Yb ions only partially succeeded, erbium yttrium chloride silicate (EYCS) with controllable Er density was synthesized successfully. EYCS with 30 at. % Er was found to be the best. It shows the strongest PL emission at 1.5 μm, and thus can be potentially used as a high gain material.
ContributorsYin, Leijun (Author) / Ning, Cun-Zheng (Thesis advisor) / Chamberlin, Ralph (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2013
Description
In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals in the plasma react with the carbon groups leading to carbon removal for the ILD films. Results indicate that an N2 plasma forms an amide-like layer on the surface which apparently leads to reduced carbon abstraction from an H2 plasma process. In addition, FTIR spectra indicate the formation of hydroxyl (Si-OH) groups following the plasma exposure. Increased temperature (380 °C) processing leads to a reduction of the hydroxyl group formation compared to ambient temperature processes, resulting in reduced changes of the dielectric constant. For CMP Cu surfaces, the carbonate contamination was removed by an H2 plasma process at elevated temperature while the C-C and C-H contamination was removed by an N2 plasma process at elevated temperature. The second part of this study examined oxide stability and cleaning of Ru surfaces as well as consequent Cu film thermal stability with the Ru layers. The ~2 monolayer native Ru oxide was reduced after H-plasma processing. The thermal stability or islanding of the Cu film on the Ru substrate was characterized by in-situ XPS. After plasma cleaning of the Ru adhesion layer, the deposited Cu exhibited full coverage. In contrast, for Cu deposition on the Ru native oxide substrate, Cu islanding was detected and was described in terms of grain boundary grooving and surface and interface energies. The thermal stability of 7 nm Ti, Pt and Ru ii interfacial adhesion layers between a Cu film (10 nm) and a Ta barrier layer (4 nm) have been investigated in the third part. The barrier properties and interfacial stability have been evaluated by Rutherford backscattering spectrometry (RBS). Atomic force microscopy (AFM) was used to measure the surfaces before and after annealing, and all the surfaces are relatively smooth excluding islanding or de-wetting phenomena as a cause of the instability. The RBS showed no discernible diffusion across the adhesion layer/Ta and Ta/Si interfaces which provides a stable underlying layer. For a Ti interfacial layer RBS indicates that during 400 °C annealing Ti interdiffuses through the Cu film and accumulates at the surface. For the Pt/Cu system Pt interdiffuion is detected which is less evident than Ti. Among the three adhesion layer candidates, Ru shows negligible diffusion into the Cu film indicating thermal stability at 400 °C.
ContributorsLiu, Xin (Author) / Nemanich, Robert (Thesis advisor) / Chamberlin, Ralph (Committee member) / Chen, Tingyong (Committee member) / Smith, David (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2012
Description
Creative design lies at the intersection of novelty and technical feasibility. These objectives can be achieved through cycles of divergence (idea generation) and convergence (idea evaluation) in conceptual design. The focus of this thesis is on the latter aspect. The evaluation may involve any aspect of technical feasibility and may be desired at component, sub-system or full system level. Two issues that are considered in this work are: 1. Information about design ideas is incomplete, informal and sketchy 2. Designers often work at multiple levels; different aspects or subsystems may be at different levels of abstraction Thus, high fidelity analysis and simulation tools are not appropriate for this purpose. This thesis looks at the requirements for a simulation tool and how it could facilitate concept evaluation. The specific tasks reported in this thesis are: 1. The typical types of information available after an ideation session 2. The typical types of technical evaluations done in early stages 3. How to conduct low fidelity design evaluation given a well-defined feasibility question A computational tool for supporting idea evaluation was designed and implemented. It was assumed that the results of the ideation session are represented as a morphological chart and each entry is expressed as some combination of a sketch, text and references to physical effects and machine components. Approximately 110 physical effects were identified and represented in terms of algebraic equations, physical variables and a textual description. A common ontology of physical variables was created so that physical effects could be networked together when variables are shared. This allows users to synthesize complex behaviors from simple ones, without assuming any solution sequence. A library of 16 machine elements was also created and users were given instructions about incorporating them. To support quick analysis, differential equations are transformed to algebraic equations by replacing differential terms with steady state differences), only steady state behavior is considered and interval arithmetic was used for modeling. The tool implementation is done by MATLAB; and a number of case studies are also done to show how the tool works. textual description. A common ontology of physical variables was created so that physical effects could be networked together when variables are shared. This allows users to synthesize complex behaviors from simple ones, without assuming any solution sequence. A library of 15 machine elements was also created and users were given instructions about incorporating them. To support quick analysis, differential equations are transformed to algebraic equations by replacing differential terms with steady state differences), only steady state behavior is considered and interval arithmetic was used for modeling. The tool implementation is done by MATLAB; and a number of case studies are also done to show how the tool works.
ContributorsKhorshidi, Maryam (Author) / Shah, Jami J. (Thesis advisor) / Wu, Teresa (Committee member) / Gel, Esma (Committee member) / Arizona State University (Publisher)
Created2014
Description
In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN. The first study involved an in-depth case study of PEALD Al2O3 growth using dimethylaluminum isopropoxide, with a special focus on oxygen plasma effects. Saturated and self-limiting growth of Al2O3 films were obtained with an enhanced growth rate within the PEALD temperature window (25-220 ºC). The properties of Al2O3 deposited at various temperatures were characterized to better understand the relation between the growth parameters and film properties. In the second study, the interface electronic structures of PEALD dielectrics on Ga-face GaN films were measured. Five promising dielectrics (Al2O3, HfO2, SiO2, La2O3, and ZnO) with a range of band gap energies were chosen. Prior to dielectric growth, a combined wet chemical and in-situ H2/N2 plasma clean process was employed to remove the carbon contamination and prepare the surface for dielectric deposition. The surface band bending and band offsets were measured by XPS and UPS for dielectrics on GaN. The trends of the experimental band offsets on GaN were related to the dielectric band gap energies. In addition, the experimental band offsets were near the calculated values based on the charge neutrality level model. The third study focused on the effect of the polarization bound charge of the Ga- and N-face GaN on interface electronic structures. A surface pretreatment process consisting of a NH4OH wet chemical and an in-situ NH3 plasma treatment was applied to remove carbon contamination, retain monolayer oxygen coverage, and potentially passivate N-vacancy related defects. The surface band bending and polarization charge compensation of Ga- and N-face GaN were investigated. The surface band bending and band offsets were determined for Al2O3, HfO2, and SiO2 on Ga- and N-face GaN. Different dielectric thicknesses and post deposition processing were investigated to understand process related defect formation and/or reduction.
ContributorsYang, Jialing (Author) / Nemanich, Robert J (Thesis advisor) / Chen, Tingyong (Committee member) / Peng, Xihong (Committee member) / Ponce, Fernando (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2014
Description
In this dissertation, combined photo-induced and thermionic electron emission from low work function diamond films is studied through low energy electron spectroscopy analysis and other associated techniques. Nitrogen-doped, hydrogen-terminated diamond films prepared by the microwave plasma chemical vapor deposition method have been the most focused material. The theme of this research is represented by four interrelated issues. (1) An in-depth study describes combined photo-induced and thermionic emission from nitrogen-doped diamond films on molybdenum substrates, which were illuminated with visible light photons, and the electron emission spectra were recorded as a function of temperature. The diamond films displayed significant emissivity with a low work function of ~ 1.5 eV. The results indicate that these diamond emitters can be applied in combined solar and thermal energy conversion. (2) The nitrogen-doped diamond was further investigated to understand the physical mechanism and material-related properties that enable the combined electron emission. Through analysis of the spectroscopy, optical absorbance and photoelectron microscopy results from sample sets prepared with different configurations, it was deduced that the photo-induced electron generation involves both the ultra-nanocrystalline diamond and the interface between the diamond film and metal substrate. (3) Based on results from the first two studies, possible photon-enhanced thermionic emission was examined from nitrogen-doped diamond films deposited on silicon substrates, which could provide the basis for a novel approach for concentrated solar energy conversion. A significant increase of emission intensity was observed at elevated temperatures, which was analyzed using computer-based modeling and a combination of different emission mechanisms. (4) In addition, the electronic structure of vanadium-oxide-terminated diamond surfaces was studied through in-situ photoemission spectroscopy. Thin layers of vanadium were deposited on oxygen-terminated diamond surfaces which led to oxide formation. After thermal annealing, a negative electron affinity was found on boron-doped diamond, while a positive electron affinity was found on nitrogen-doped diamond. A model based on the barrier at the diamond-oxide interface was employed to analyze the results. Based on results of this dissertation, applications of diamond-based energy conversion devices for combined solar- and thermal energy conversion are proposed.
ContributorsSun, Tianyin (Author) / Nemanich, Robert (Thesis advisor) / Ponce, Fernando (Committee member) / Peng, Xihong (Committee member) / Spence, John (Committee member) / Treacy, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
This thesis describes the fabrication of several new classes of Ge1-x-ySixSny materials with the required compositions and crystal quality to engineer the band gaps above and below that of elemental Ge (0.8 eV) in the near IR. The work initially focused on Ge1-x-ySixSny (1-5% Sn, 4-20% Si) materials grown on Ge(100) via gas-source epitaxy of Ge4H10, Si4H10 and SnD4. Both intrinsic and doped layers were produced with defect-free microstructure and viable thickness, allowing the fabrication of high-performance photodetectors. These exhibited low ideality factors, state-of-the-art dark current densities and adjustable absorption edges between 0.87 and 1.03 eV, indicating that the band gaps span a significant range above that of Ge. Next Sn-rich Ge1-x-ySixSny alloys (2-4% Si and 4-10% Sn) were fabricated directly on Si and were found to show significant optical emission using photoluminescence measurements, indicating that the alloys have direct band gaps below that of pure Ge in the range of 0.7-0.55 eV. A series of Sn-rich Ge1-x-ySixSny analogues (y>x) with fixed 3-4% Si content and progressively increasing Sn content in the 4-10% range were then grown on Ge buffered Si platforms for the purpose of improving the material's crystal quality. The films in this case exhibited lower defect densities than those grown on Si, allowing a meaningful study of both the direct and indirect gaps. The results show that the separation of the direct and indirect edges can be made smaller than in Ge even for non-negligible 3-4% Si content, confirming that with a suitable choice of Sn compositions the ternary Ge1-x-ySixSny reproduces all features of the electronic structure of binary Ge1-ySny, including the sought-after indirect-to-direct gap cross over. The above synthesis of optical quality Ge1-x-ySixSny on virtual Ge was made possible by the development of high quality Ge-on-Si buffers via chemical vapor deposition of Ge4H10. The resultant films exhibited structural and electrical properties significantly improved relative to state-of-the-art results obtained using conventional approaches. It was found that pure Ge4H10 facilitates the control of residual doping and enables p-i-n devices whose dark currents are not entirely determined by defects and whose zero-bias collection efficiencies are higher than those obtained from samples fabricated using alternative Ge-on-Si approaches.
ContributorsXu, Chi (Author) / Kouvetakis, John (Thesis advisor) / Menéndez, Jose (Thesis advisor) / Chizmeshya, Andrew (Committee member) / Drucker, Jeffrey (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2013
Description
The initial microstructure of oxide fuel pellets can play a key role in their performance. At low burnups, the transport of fission products has a strong dependence on oxygen content, grain size distribution, porosity and grain boundary (GB) characteristics (crystallography, geometry and topology), all of which, in turn depend on processing conditions. These microstructural features can also affect the fuel densification, thermal conductivity and microstructure evolution inside the reactor. Understanding these effects can provide insight into microstructure evolution of fuels in-pile. In this work, mechanical and ion beam serial sectioning techniques were developed to obtain Electron Backscatter Diffraction (EBSD) data, both in 2-D and 3-D, for depleted UO2+X pellets manufactured under different conditions. The EBSD maps were used to relate processing conditions to microstructural features, with emphasis on special GBs according to the Coincident Site Lattice (CSL) model, as well as correlations between pore size and location in the microstructure. Furthermore, larger grains (at least 2.5 times the average grain size) were observed in all the samples and studied. Results indicate that larger grains, in samples manufactured under different conditions, dominate the overall crystallographic texture and have a fairly strong GB texture. Moreover, it seems that the preferential misorientation axis for these GBs, regardless of the O/M, is {001}. These results might be related to GB energy and structure and, suggest that the mechanism that controls grain growth seems to be independent of both processing conditions and stoichiometry. Additionally, a sample was heat treated to relate grain growth and crystallography. The results indicate that at least two mechanisms were involved. Lengthening of GBs was observed for larger grains. Another mechanism of grain growth was observed, in this case, grains rotate to match a neighboring grain forming a larger grain. In the new grain, the misorientation between the two neighboring grains decreases to less than 5 degrees, forming a new larger grain. The results presented in this work indicate that detailed studies of the initial microstructure of the fuel, with emphasis on the crystallography of grains and GBs could help to give insights on the in-pile microstructural evolution of the fuel.
ContributorsRudman Prieto, Karin (Author) / Peralta, Pedro (Thesis advisor) / Ponce, Fernando (Committee member) / Sieradski, Karl (Committee member) / Arizona State University (Publisher)
Created2014
Description
Network traffic analysis by means of Quality of Service (QoS) is a popular research and development area among researchers for a long time. It is becoming even more relevant recently due to ever increasing use of the Internet and other public and private communication networks. Fast and precise QoS analysis is a vital task in mission-critical communication networks (MCCNs), where providing a certain level of QoS is essential for national security, safety or economic vitality. In this thesis, the details of all aspects of a comprehensive computational framework for QoS analysis in MCCNs are provided. There are three main QoS analysis tasks in MCCNs; QoS measurement, QoS visualization and QoS prediction. Definitions of these tasks are provided and for each of those, complete solutions are suggested either by referring to an existing work or providing novel methods.
A scalable and accurate passive one-way QoS measurement algorithm is proposed. It is shown that accurate QoS measurements are possible using network flow data.
Requirements of a good QoS visualization platform are listed. Implementations of the capabilities of a complete visualization platform are presented.
Steps of QoS prediction task in MCCNs are defined. The details of feature selection, class balancing through sampling and assessing classification algorithms for this task are outlined. Moreover, a novel tree based logistic regression method for knowledge discovery is introduced. Developed prediction framework is capable of making very accurate packet level QoS predictions and giving valuable insights to network administrators.
A scalable and accurate passive one-way QoS measurement algorithm is proposed. It is shown that accurate QoS measurements are possible using network flow data.
Requirements of a good QoS visualization platform are listed. Implementations of the capabilities of a complete visualization platform are presented.
Steps of QoS prediction task in MCCNs are defined. The details of feature selection, class balancing through sampling and assessing classification algorithms for this task are outlined. Moreover, a novel tree based logistic regression method for knowledge discovery is introduced. Developed prediction framework is capable of making very accurate packet level QoS predictions and giving valuable insights to network administrators.
ContributorsSenturk, Muhammet Burhan (Author) / Li, Jing (Thesis advisor) / Baydogan, Mustafa G (Committee member) / Wu, Teresa (Committee member) / Arizona State University (Publisher)
Created2014
Description
This thesis presents a meta-analysis of lead-free solder reliability. The qualitative analyses of the failure modes of lead- free solder under different stress tests including drop test, bend test, thermal test and vibration test are discussed. The main cause of failure of lead- free solder is fatigue crack, and the speed of propagation of the initial crack could differ from different test conditions and different solder materials. A quantitative analysis about the fatigue behavior of SAC lead-free solder under thermal preconditioning process is conducted. This thesis presents a method of making prediction of failure life of solder alloy by building a Weibull regression model. The failure life of solder on circuit board is assumed Weibull distributed. Different materials and test conditions could affect the distribution by changing the shape and scale parameters of Weibull distribution. The method is to model the regression of parameters with different test conditions as predictors based on Bayesian inference concepts. In the process of building regression models, prior distributions are generated according to the previous studies, and Markov Chain Monte Carlo (MCMC) is used under WinBUGS environment.
ContributorsXu, Xinyue (Author) / Pan, Rong (Thesis advisor) / Montgomery, Douglas C. (Committee member) / Wu, Teresa (Committee member) / Arizona State University (Publisher)
Created2014
Description
The main objective of this research is to develop an approach to PV module lifetime prediction. In doing so, the aim is to move from empirical generalizations to a formal predictive science based on data-driven case studies of the crystalline silicon PV systems. The evaluation of PV systems aged 5 to 30 years old that results in systematic predictive capability that is absent today. The warranty period provided by the manufacturers typically range from 20 to 25 years for crystalline silicon modules. The end of lifetime (for example, the time-to-degrade by 20% from rated power) of PV modules is usually calculated using a simple linear extrapolation based on the annual field degradation rate (say, 0.8% drop in power output per year). It has been 26 years since systematic studies on solar PV module lifetime prediction were undertaken as part of the 11-year flat-plate solar array (FSA) project of the Jet Propulsion Laboratory (JPL) funded by DOE. Since then, PV modules have gone through significant changes in construction materials and design; making most of the field data obsolete, though the effect field stressors on the old designs/materials is valuable to be understood. Efforts have been made to adapt some of the techniques developed to the current technologies, but they are too often limited in scope and too reliant on empirical generalizations of previous results. Some systematic approaches have been proposed based on accelerated testing, but no or little experimental studies have followed. Consequently, the industry does not exactly know today how to test modules for a 20 - 30 years lifetime.
This research study focuses on the behavior of crystalline silicon PV module technology in the dry and hot climatic condition of Tempe/Phoenix, Arizona. A three-phase approach was developed: (1) A quantitative failure modes, effects, and criticality analysis (FMECA) was developed for prioritizing failure modes or mechanisms in a given environment; (2) A time-series approach was used to model environmental stress variables involved and prioritize their effect on the power output drop; and (3) A procedure for developing a prediction model was proposed for the climatic specific condition based on accelerated degradation testing
This research study focuses on the behavior of crystalline silicon PV module technology in the dry and hot climatic condition of Tempe/Phoenix, Arizona. A three-phase approach was developed: (1) A quantitative failure modes, effects, and criticality analysis (FMECA) was developed for prioritizing failure modes or mechanisms in a given environment; (2) A time-series approach was used to model environmental stress variables involved and prioritize their effect on the power output drop; and (3) A procedure for developing a prediction model was proposed for the climatic specific condition based on accelerated degradation testing
ContributorsKuitche, Joseph Mathurin (Author) / Pan, Rong (Thesis advisor) / Tamizhmani, Govindasamy (Thesis advisor) / Montgomery, Douglas C. (Committee member) / Wu, Teresa (Committee member) / Arizona State University (Publisher)
Created2014