ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 64
Description
Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1 x 1020 cm-3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonics applications. Er compounds could potentially solve this problem since they contain much higher Er density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor quality of crystals produced by various methods of thin film growth and deposition. This dissertation explores a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl ) in the nanowire form, which facilitates the growth of high quality single crystals. Growth methods for such single crystal ECS nanowires have been established. Various structural and optical characterizations have been carried out. The high crystal quality of ECS material leads to a long lifetime of the first excited state of Er3+ ions up to 1 ms at Er density higher than 1022 cm-3. This Er lifetime-density product was found to be the largest among all Er containing materials. A unique integrating sphere method was developed to measure the absorption cross section of ECS nanowires from 440 to 1580 nm. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement from a single ECS wire. It was estimated that such large signal enhancement can overcome the absorption to result in a net material gain, but not sufficient to compensate waveguide propagation loss. In order to suppress the upconversion process in ECS, Ytterbium (Yb) and Yttrium (Y) ions are introduced as substituent ions of Er in the ECS crystal structure to reduce Er density. While the addition of Yb ions only partially succeeded, erbium yttrium chloride silicate (EYCS) with controllable Er density was synthesized successfully. EYCS with 30 at. % Er was found to be the best. It shows the strongest PL emission at 1.5 μm, and thus can be potentially used as a high gain material.
ContributorsYin, Leijun (Author) / Ning, Cun-Zheng (Thesis advisor) / Chamberlin, Ralph (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2013
Description
Image resolution limits the extent to which zooming enhances clarity, restricts the size digital photographs can be printed at, and, in the context of medical images, can prevent a diagnosis. Interpolation is the supplementing of known data with estimated values based on a function or model involving some or all of the known samples. The selection of the contributing data points and the specifics of how they are used to define the interpolated values influences how effectively the interpolation algorithm is able to estimate the underlying, continuous signal. The main contributions of this dissertation are three fold: 1) Reframing edge-directed interpolation of a single image as an intensity-based registration problem. 2) Providing an analytical framework for intensity-based registration using control grid constraints. 3) Quantitative assessment of the new, single-image enlargement algorithm based on analytical intensity-based registration. In addition to single image resizing, the new methods and analytical approaches were extended to address a wide range of applications including volumetric (multi-slice) image interpolation, video deinterlacing, motion detection, and atmospheric distortion correction. Overall, the new approaches generate results that more accurately reflect the underlying signals than less computationally demanding approaches and with lower processing requirements and fewer restrictions than methods with comparable accuracy.
ContributorsZwart, Christine M. (Author) / Frakes, David H (Thesis advisor) / Karam, Lina (Committee member) / Kodibagkar, Vikram (Committee member) / Spanias, Andreas (Committee member) / Towe, Bruce (Committee member) / Arizona State University (Publisher)
Created2013
Description
Motion capture using cost-effective sensing technology is challenging and the huge success of Microsoft Kinect has been attracting researchers to uncover the potential of using this technology into computer vision applications. In this thesis, an upper-body motion analysis in a home-based system for stroke rehabilitation using novel RGB-D camera - Kinect is presented. We address this problem by first conducting a systematic analysis of the usability of Kinect for motion analysis in stroke rehabilitation. Then a hybrid upper body tracking approach is proposed which combines off-the-shelf skeleton tracking with a novel depth-fused mean shift tracking method. We proposed several kinematic features reliably extracted from the proposed inexpensive and portable motion capture system and classifiers that correlate torso movement to clinical measures of unimpaired and impaired. Experiment results show that the proposed sensing and analysis works reliably on measuring torso movement quality and is promising for end-point tracking. The system is currently being deployed for large-scale evaluations.
ContributorsDu, Tingfang (Author) / Turaga, Pavan (Thesis advisor) / Spanias, Andreas (Committee member) / Rikakis, Thanassis (Committee member) / Arizona State University (Publisher)
Created2012
Description
In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals in the plasma react with the carbon groups leading to carbon removal for the ILD films. Results indicate that an N2 plasma forms an amide-like layer on the surface which apparently leads to reduced carbon abstraction from an H2 plasma process. In addition, FTIR spectra indicate the formation of hydroxyl (Si-OH) groups following the plasma exposure. Increased temperature (380 °C) processing leads to a reduction of the hydroxyl group formation compared to ambient temperature processes, resulting in reduced changes of the dielectric constant. For CMP Cu surfaces, the carbonate contamination was removed by an H2 plasma process at elevated temperature while the C-C and C-H contamination was removed by an N2 plasma process at elevated temperature. The second part of this study examined oxide stability and cleaning of Ru surfaces as well as consequent Cu film thermal stability with the Ru layers. The ~2 monolayer native Ru oxide was reduced after H-plasma processing. The thermal stability or islanding of the Cu film on the Ru substrate was characterized by in-situ XPS. After plasma cleaning of the Ru adhesion layer, the deposited Cu exhibited full coverage. In contrast, for Cu deposition on the Ru native oxide substrate, Cu islanding was detected and was described in terms of grain boundary grooving and surface and interface energies. The thermal stability of 7 nm Ti, Pt and Ru ii interfacial adhesion layers between a Cu film (10 nm) and a Ta barrier layer (4 nm) have been investigated in the third part. The barrier properties and interfacial stability have been evaluated by Rutherford backscattering spectrometry (RBS). Atomic force microscopy (AFM) was used to measure the surfaces before and after annealing, and all the surfaces are relatively smooth excluding islanding or de-wetting phenomena as a cause of the instability. The RBS showed no discernible diffusion across the adhesion layer/Ta and Ta/Si interfaces which provides a stable underlying layer. For a Ti interfacial layer RBS indicates that during 400 °C annealing Ti interdiffuses through the Cu film and accumulates at the surface. For the Pt/Cu system Pt interdiffuion is detected which is less evident than Ti. Among the three adhesion layer candidates, Ru shows negligible diffusion into the Cu film indicating thermal stability at 400 °C.
ContributorsLiu, Xin (Author) / Nemanich, Robert (Thesis advisor) / Chamberlin, Ralph (Committee member) / Chen, Tingyong (Committee member) / Smith, David (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2012
Description
Asymptotic comparisons of ergodic channel capacity at high and low signal-to-noise ratios (SNRs) are provided for several adaptive transmission schemes over fading channels with general distributions, including optimal power and rate adaptation, rate adaptation only, channel inversion and its variants. Analysis of the high-SNR pre-log constants of the ergodic capacity reveals the existence of constant capacity difference gaps among the schemes with a pre-log constant of 1. Closed-form expressions for these high-SNR capacity difference gaps are derived, which are proportional to the SNR loss between these schemes in dB scale. The largest one of these gaps is found to be between the optimal power and rate adaptation scheme and the channel inversion scheme. Based on these expressions it is shown that the presence of space diversity or multi-user diversity makes channel inversion arbitrarily close to achieving optimal capacity at high SNR with sufficiently large number of antennas or users. A low-SNR analysis also reveals that the presence of fading provably always improves capacity at sufficiently low SNR, compared to the additive white Gaussian noise (AWGN) case. Numerical results are shown to corroborate our analytical results. This dissertation derives high-SNR asymptotic average error rates over fading channels by relating them to the outage probability, under mild assumptions. The analysis is based on the Tauberian theorem for Laplace-Stieltjes transforms which is grounded on the notion of regular variation, and applies to a wider range of channel distributions than existing approaches. The theory of regular variation is argued to be the proper mathematical framework for finding sufficient and necessary conditions for outage events to dominate high-SNR error rate performance. It is proved that the diversity order being d and the cumulative distribution function (CDF) of the channel power gain having variation exponent d at 0 imply each other, provided that the instantaneous error rate is upper-bounded by an exponential function of the instantaneous SNR. High-SNR asymptotic average error rates are derived for specific instantaneous error rates. Compared to existing approaches in the literature, the asymptotic expressions are related to the channel distribution in a much simpler manner herein, and related with outage more intuitively. The high-SNR asymptotic error rate is also characterized under diversity combining schemes with the channel power gain of each branch having a regularly varying CDF. Numerical results are shown to corroborate our theoretical analysis. This dissertation studies several problems concerning channel inclusion, which is a partial ordering between discrete memoryless channels (DMCs) proposed by Shannon. Specifically, majorization-based conditions are derived for channel inclusion between certain DMCs. Furthermore, under general conditions, channel equivalence defined through Shannon ordering is shown to be the same as permutation of input and output symbols. The determination of channel inclusion is considered as a convex optimization problem, and the sparsity of the weights related to the representation of the worse DMC in terms of the better one is revealed when channel inclusion holds between two DMCs. For the exploitation of this sparsity, an effective iterative algorithm is established based on modifying the orthogonal matching pursuit algorithm. The extension of channel inclusion to continuous channels and its application in ordering phase noises are briefly addressed.
ContributorsZhang, Yuan (Author) / Tepedelenlioğlu, Cihan (Thesis advisor) / Zhang, Junshan (Committee member) / Reisslein, Martin (Committee member) / Spanias, Andreas (Committee member) / Arizona State University (Publisher)
Created2013
Description
In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN. The first study involved an in-depth case study of PEALD Al2O3 growth using dimethylaluminum isopropoxide, with a special focus on oxygen plasma effects. Saturated and self-limiting growth of Al2O3 films were obtained with an enhanced growth rate within the PEALD temperature window (25-220 ºC). The properties of Al2O3 deposited at various temperatures were characterized to better understand the relation between the growth parameters and film properties. In the second study, the interface electronic structures of PEALD dielectrics on Ga-face GaN films were measured. Five promising dielectrics (Al2O3, HfO2, SiO2, La2O3, and ZnO) with a range of band gap energies were chosen. Prior to dielectric growth, a combined wet chemical and in-situ H2/N2 plasma clean process was employed to remove the carbon contamination and prepare the surface for dielectric deposition. The surface band bending and band offsets were measured by XPS and UPS for dielectrics on GaN. The trends of the experimental band offsets on GaN were related to the dielectric band gap energies. In addition, the experimental band offsets were near the calculated values based on the charge neutrality level model. The third study focused on the effect of the polarization bound charge of the Ga- and N-face GaN on interface electronic structures. A surface pretreatment process consisting of a NH4OH wet chemical and an in-situ NH3 plasma treatment was applied to remove carbon contamination, retain monolayer oxygen coverage, and potentially passivate N-vacancy related defects. The surface band bending and polarization charge compensation of Ga- and N-face GaN were investigated. The surface band bending and band offsets were determined for Al2O3, HfO2, and SiO2 on Ga- and N-face GaN. Different dielectric thicknesses and post deposition processing were investigated to understand process related defect formation and/or reduction.
ContributorsYang, Jialing (Author) / Nemanich, Robert J (Thesis advisor) / Chen, Tingyong (Committee member) / Peng, Xihong (Committee member) / Ponce, Fernando (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2014
Description
In this dissertation, combined photo-induced and thermionic electron emission from low work function diamond films is studied through low energy electron spectroscopy analysis and other associated techniques. Nitrogen-doped, hydrogen-terminated diamond films prepared by the microwave plasma chemical vapor deposition method have been the most focused material. The theme of this research is represented by four interrelated issues. (1) An in-depth study describes combined photo-induced and thermionic emission from nitrogen-doped diamond films on molybdenum substrates, which were illuminated with visible light photons, and the electron emission spectra were recorded as a function of temperature. The diamond films displayed significant emissivity with a low work function of ~ 1.5 eV. The results indicate that these diamond emitters can be applied in combined solar and thermal energy conversion. (2) The nitrogen-doped diamond was further investigated to understand the physical mechanism and material-related properties that enable the combined electron emission. Through analysis of the spectroscopy, optical absorbance and photoelectron microscopy results from sample sets prepared with different configurations, it was deduced that the photo-induced electron generation involves both the ultra-nanocrystalline diamond and the interface between the diamond film and metal substrate. (3) Based on results from the first two studies, possible photon-enhanced thermionic emission was examined from nitrogen-doped diamond films deposited on silicon substrates, which could provide the basis for a novel approach for concentrated solar energy conversion. A significant increase of emission intensity was observed at elevated temperatures, which was analyzed using computer-based modeling and a combination of different emission mechanisms. (4) In addition, the electronic structure of vanadium-oxide-terminated diamond surfaces was studied through in-situ photoemission spectroscopy. Thin layers of vanadium were deposited on oxygen-terminated diamond surfaces which led to oxide formation. After thermal annealing, a negative electron affinity was found on boron-doped diamond, while a positive electron affinity was found on nitrogen-doped diamond. A model based on the barrier at the diamond-oxide interface was employed to analyze the results. Based on results of this dissertation, applications of diamond-based energy conversion devices for combined solar- and thermal energy conversion are proposed.
ContributorsSun, Tianyin (Author) / Nemanich, Robert (Thesis advisor) / Ponce, Fernando (Committee member) / Peng, Xihong (Committee member) / Spence, John (Committee member) / Treacy, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Recently, the location of the nodes in wireless networks has been modeled as point processes. In this dissertation, various scenarios of wireless communications in large-scale networks modeled as point processes are considered. The first part of the dissertation considers signal reception and detection problems with symmetric alpha stable noise which is from an interfering network modeled as a Poisson point process. For the signal reception problem, the performance of space-time coding (STC) over fading channels with alpha stable noise is studied. We derive pairwise error probability (PEP) of orthogonal STCs. For general STCs, we propose a maximum-likelihood (ML) receiver, and its approximation. The resulting asymptotically optimal receiver (AOR) does not depend on noise parameters and is computationally simple, and close to the ML performance. Then, signal detection in coexisting wireless sensor networks (WSNs) is considered. We define a binary hypothesis testing problem for the signal detection in coexisting WSNs. For the problem, we introduce the ML detector and simpler alternatives. The proposed mixed-fractional lower order moment (FLOM) detector is computationally simple and close to the ML performance. Stochastic orders are binary relations defined on probability. The second part of the dissertation introduces stochastic ordering of interferences in large-scale networks modeled as point processes. Since closed-form results for the interference distributions for such networks are only available in limited cases, it is of interest to compare network interferences using stochastic. In this dissertation, conditions on the fading distribution and path-loss model are given to establish stochastic ordering between interferences. Moreover, Laplace functional (LF) ordering is defined between point processes and applied for comparing interference. Then, the LF orderings of general classes of point processes are introduced. It is also shown that the LF ordering is preserved when independent operations such as marking, thinning, random translation, and superposition are applied. The LF ordering of point processes is a useful tool for comparing spatial deployments of wireless networks and can be used to establish comparisons of several performance metrics such as coverage probability, achievable rate, and resource allocation even when closed form expressions for such metrics are unavailable.
ContributorsLee, Junghoon (Author) / Tepedelenlioğlu, Cihan (Thesis advisor) / Spanias, Andreas (Committee member) / Reisslein, Martin (Committee member) / Kosut, Oliver (Committee member) / Arizona State University (Publisher)
Created2014
Description
This thesis describes the fabrication of several new classes of Ge1-x-ySixSny materials with the required compositions and crystal quality to engineer the band gaps above and below that of elemental Ge (0.8 eV) in the near IR. The work initially focused on Ge1-x-ySixSny (1-5% Sn, 4-20% Si) materials grown on Ge(100) via gas-source epitaxy of Ge4H10, Si4H10 and SnD4. Both intrinsic and doped layers were produced with defect-free microstructure and viable thickness, allowing the fabrication of high-performance photodetectors. These exhibited low ideality factors, state-of-the-art dark current densities and adjustable absorption edges between 0.87 and 1.03 eV, indicating that the band gaps span a significant range above that of Ge. Next Sn-rich Ge1-x-ySixSny alloys (2-4% Si and 4-10% Sn) were fabricated directly on Si and were found to show significant optical emission using photoluminescence measurements, indicating that the alloys have direct band gaps below that of pure Ge in the range of 0.7-0.55 eV. A series of Sn-rich Ge1-x-ySixSny analogues (y>x) with fixed 3-4% Si content and progressively increasing Sn content in the 4-10% range were then grown on Ge buffered Si platforms for the purpose of improving the material's crystal quality. The films in this case exhibited lower defect densities than those grown on Si, allowing a meaningful study of both the direct and indirect gaps. The results show that the separation of the direct and indirect edges can be made smaller than in Ge even for non-negligible 3-4% Si content, confirming that with a suitable choice of Sn compositions the ternary Ge1-x-ySixSny reproduces all features of the electronic structure of binary Ge1-ySny, including the sought-after indirect-to-direct gap cross over. The above synthesis of optical quality Ge1-x-ySixSny on virtual Ge was made possible by the development of high quality Ge-on-Si buffers via chemical vapor deposition of Ge4H10. The resultant films exhibited structural and electrical properties significantly improved relative to state-of-the-art results obtained using conventional approaches. It was found that pure Ge4H10 facilitates the control of residual doping and enables p-i-n devices whose dark currents are not entirely determined by defects and whose zero-bias collection efficiencies are higher than those obtained from samples fabricated using alternative Ge-on-Si approaches.
ContributorsXu, Chi (Author) / Kouvetakis, John (Thesis advisor) / Menéndez, Jose (Thesis advisor) / Chizmeshya, Andrew (Committee member) / Drucker, Jeffrey (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2013
Description
Continuous monitoring of sensor data from smart phones to identify human activities and gestures, puts a heavy load on the smart phone's power consumption. In this research study, the non-Euclidean geometry of the rich sensor data obtained from the user's smart phone is utilized to perform compressive analysis and efficient classification of human activities by employing machine learning techniques. We are interested in the generalization of classical tools for signal approximation to newer spaces, such as rotation data, which is best studied in a non-Euclidean setting, and its application to activity analysis. Attributing to the non-linear nature of the rotation data space, which involve a heavy overload on the smart phone's processor and memory as opposed to feature extraction on the Euclidean space, indexing and compaction of the acquired sensor data is performed prior to feature extraction, to reduce CPU overhead and thereby increase the lifetime of the battery with a little loss in recognition accuracy of the activities. The sensor data represented as unit quaternions, is a more intrinsic representation of the orientation of smart phone compared to Euler angles (which suffers from Gimbal lock problem) or the computationally intensive rotation matrices. Classification algorithms are employed to classify these manifold sequences in the non-Euclidean space. By performing customized indexing (using K-means algorithm) of the evolved manifold sequences before feature extraction, considerable energy savings is achieved in terms of smart phone's battery life.
ContributorsSivakumar, Aswin (Author) / Turaga, Pavan (Thesis advisor) / Spanias, Andreas (Committee member) / Papandreou-Suppappola, Antonia (Committee member) / Arizona State University (Publisher)
Created2014