ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 69
Description
Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1 x 1020 cm-3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonics applications. Er compounds could potentially solve this problem since they contain much higher Er density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor quality of crystals produced by various methods of thin film growth and deposition. This dissertation explores a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl ) in the nanowire form, which facilitates the growth of high quality single crystals. Growth methods for such single crystal ECS nanowires have been established. Various structural and optical characterizations have been carried out. The high crystal quality of ECS material leads to a long lifetime of the first excited state of Er3+ ions up to 1 ms at Er density higher than 1022 cm-3. This Er lifetime-density product was found to be the largest among all Er containing materials. A unique integrating sphere method was developed to measure the absorption cross section of ECS nanowires from 440 to 1580 nm. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement from a single ECS wire. It was estimated that such large signal enhancement can overcome the absorption to result in a net material gain, but not sufficient to compensate waveguide propagation loss. In order to suppress the upconversion process in ECS, Ytterbium (Yb) and Yttrium (Y) ions are introduced as substituent ions of Er in the ECS crystal structure to reduce Er density. While the addition of Yb ions only partially succeeded, erbium yttrium chloride silicate (EYCS) with controllable Er density was synthesized successfully. EYCS with 30 at. % Er was found to be the best. It shows the strongest PL emission at 1.5 μm, and thus can be potentially used as a high gain material.
ContributorsYin, Leijun (Author) / Ning, Cun-Zheng (Thesis advisor) / Chamberlin, Ralph (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2013
Description
In recent years we have witnessed a shift towards multi-processor system-on-chips (MPSoCs) to address the demands of embedded devices (such as cell phones, GPS devices, luxury car features, etc.). Highly optimized MPSoCs are well-suited to tackle the complex application demands desired by the end user customer. These MPSoCs incorporate a constellation of heterogeneous processing elements (PEs) (general purpose PEs and application-specific integrated circuits (ASICS)). A typical MPSoC will be composed of a application processor, such as an ARM Coretex-A9 with cache coherent memory hierarchy, and several application sub-systems. Each of these sub-systems are composed of highly optimized instruction processors, graphics/DSP processors, and custom hardware accelerators. Typically, these sub-systems utilize scratchpad memories (SPM) rather than support cache coherency. The overall architecture is an integration of the various sub-systems through a high bandwidth system-level interconnect (such as a Network-on-Chip (NoC)). The shift to MPSoCs has been fueled by three major factors: demand for high performance, the use of component libraries, and short design turn around time. As customers continue to desire more and more complex applications on their embedded devices the performance demand for these devices continues to increase. Designers have turned to using MPSoCs to address this demand. By using pre-made IP libraries designers can quickly piece together a MPSoC that will meet the application demands of the end user with minimal time spent designing new hardware. Additionally, the use of MPSoCs allows designers to generate new devices very quickly and thus reducing the time to market. In this work, a complete MPSoC synthesis design flow is presented. We first present a technique \cite{leary1_intro} to address the synthesis of the interconnect architecture (particularly Network-on-Chip (NoC)). We then address the synthesis of the memory architecture of a MPSoC sub-system \cite{leary2_intro}. Lastly, we present a co-synthesis technique to generate the functional and memory architectures simultaneously. The validity and quality of each synthesis technique is demonstrated through extensive experimentation.
ContributorsLeary, Glenn (Author) / Chatha, Karamvir S (Thesis advisor) / Vrudhula, Sarma (Committee member) / Shrivastava, Aviral (Committee member) / Beraha, Rudy (Committee member) / Arizona State University (Publisher)
Created2013
Description
In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals in the plasma react with the carbon groups leading to carbon removal for the ILD films. Results indicate that an N2 plasma forms an amide-like layer on the surface which apparently leads to reduced carbon abstraction from an H2 plasma process. In addition, FTIR spectra indicate the formation of hydroxyl (Si-OH) groups following the plasma exposure. Increased temperature (380 °C) processing leads to a reduction of the hydroxyl group formation compared to ambient temperature processes, resulting in reduced changes of the dielectric constant. For CMP Cu surfaces, the carbonate contamination was removed by an H2 plasma process at elevated temperature while the C-C and C-H contamination was removed by an N2 plasma process at elevated temperature. The second part of this study examined oxide stability and cleaning of Ru surfaces as well as consequent Cu film thermal stability with the Ru layers. The ~2 monolayer native Ru oxide was reduced after H-plasma processing. The thermal stability or islanding of the Cu film on the Ru substrate was characterized by in-situ XPS. After plasma cleaning of the Ru adhesion layer, the deposited Cu exhibited full coverage. In contrast, for Cu deposition on the Ru native oxide substrate, Cu islanding was detected and was described in terms of grain boundary grooving and surface and interface energies. The thermal stability of 7 nm Ti, Pt and Ru ii interfacial adhesion layers between a Cu film (10 nm) and a Ta barrier layer (4 nm) have been investigated in the third part. The barrier properties and interfacial stability have been evaluated by Rutherford backscattering spectrometry (RBS). Atomic force microscopy (AFM) was used to measure the surfaces before and after annealing, and all the surfaces are relatively smooth excluding islanding or de-wetting phenomena as a cause of the instability. The RBS showed no discernible diffusion across the adhesion layer/Ta and Ta/Si interfaces which provides a stable underlying layer. For a Ti interfacial layer RBS indicates that during 400 °C annealing Ti interdiffuses through the Cu film and accumulates at the surface. For the Pt/Cu system Pt interdiffuion is detected which is less evident than Ti. Among the three adhesion layer candidates, Ru shows negligible diffusion into the Cu film indicating thermal stability at 400 °C.
ContributorsLiu, Xin (Author) / Nemanich, Robert (Thesis advisor) / Chamberlin, Ralph (Committee member) / Chen, Tingyong (Committee member) / Smith, David (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2012
Description
In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN. The first study involved an in-depth case study of PEALD Al2O3 growth using dimethylaluminum isopropoxide, with a special focus on oxygen plasma effects. Saturated and self-limiting growth of Al2O3 films were obtained with an enhanced growth rate within the PEALD temperature window (25-220 ºC). The properties of Al2O3 deposited at various temperatures were characterized to better understand the relation between the growth parameters and film properties. In the second study, the interface electronic structures of PEALD dielectrics on Ga-face GaN films were measured. Five promising dielectrics (Al2O3, HfO2, SiO2, La2O3, and ZnO) with a range of band gap energies were chosen. Prior to dielectric growth, a combined wet chemical and in-situ H2/N2 plasma clean process was employed to remove the carbon contamination and prepare the surface for dielectric deposition. The surface band bending and band offsets were measured by XPS and UPS for dielectrics on GaN. The trends of the experimental band offsets on GaN were related to the dielectric band gap energies. In addition, the experimental band offsets were near the calculated values based on the charge neutrality level model. The third study focused on the effect of the polarization bound charge of the Ga- and N-face GaN on interface electronic structures. A surface pretreatment process consisting of a NH4OH wet chemical and an in-situ NH3 plasma treatment was applied to remove carbon contamination, retain monolayer oxygen coverage, and potentially passivate N-vacancy related defects. The surface band bending and polarization charge compensation of Ga- and N-face GaN were investigated. The surface band bending and band offsets were determined for Al2O3, HfO2, and SiO2 on Ga- and N-face GaN. Different dielectric thicknesses and post deposition processing were investigated to understand process related defect formation and/or reduction.
ContributorsYang, Jialing (Author) / Nemanich, Robert J (Thesis advisor) / Chen, Tingyong (Committee member) / Peng, Xihong (Committee member) / Ponce, Fernando (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2014
Description
In this dissertation, combined photo-induced and thermionic electron emission from low work function diamond films is studied through low energy electron spectroscopy analysis and other associated techniques. Nitrogen-doped, hydrogen-terminated diamond films prepared by the microwave plasma chemical vapor deposition method have been the most focused material. The theme of this research is represented by four interrelated issues. (1) An in-depth study describes combined photo-induced and thermionic emission from nitrogen-doped diamond films on molybdenum substrates, which were illuminated with visible light photons, and the electron emission spectra were recorded as a function of temperature. The diamond films displayed significant emissivity with a low work function of ~ 1.5 eV. The results indicate that these diamond emitters can be applied in combined solar and thermal energy conversion. (2) The nitrogen-doped diamond was further investigated to understand the physical mechanism and material-related properties that enable the combined electron emission. Through analysis of the spectroscopy, optical absorbance and photoelectron microscopy results from sample sets prepared with different configurations, it was deduced that the photo-induced electron generation involves both the ultra-nanocrystalline diamond and the interface between the diamond film and metal substrate. (3) Based on results from the first two studies, possible photon-enhanced thermionic emission was examined from nitrogen-doped diamond films deposited on silicon substrates, which could provide the basis for a novel approach for concentrated solar energy conversion. A significant increase of emission intensity was observed at elevated temperatures, which was analyzed using computer-based modeling and a combination of different emission mechanisms. (4) In addition, the electronic structure of vanadium-oxide-terminated diamond surfaces was studied through in-situ photoemission spectroscopy. Thin layers of vanadium were deposited on oxygen-terminated diamond surfaces which led to oxide formation. After thermal annealing, a negative electron affinity was found on boron-doped diamond, while a positive electron affinity was found on nitrogen-doped diamond. A model based on the barrier at the diamond-oxide interface was employed to analyze the results. Based on results of this dissertation, applications of diamond-based energy conversion devices for combined solar- and thermal energy conversion are proposed.
ContributorsSun, Tianyin (Author) / Nemanich, Robert (Thesis advisor) / Ponce, Fernando (Committee member) / Peng, Xihong (Committee member) / Spence, John (Committee member) / Treacy, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
This thesis describes the fabrication of several new classes of Ge1-x-ySixSny materials with the required compositions and crystal quality to engineer the band gaps above and below that of elemental Ge (0.8 eV) in the near IR. The work initially focused on Ge1-x-ySixSny (1-5% Sn, 4-20% Si) materials grown on Ge(100) via gas-source epitaxy of Ge4H10, Si4H10 and SnD4. Both intrinsic and doped layers were produced with defect-free microstructure and viable thickness, allowing the fabrication of high-performance photodetectors. These exhibited low ideality factors, state-of-the-art dark current densities and adjustable absorption edges between 0.87 and 1.03 eV, indicating that the band gaps span a significant range above that of Ge. Next Sn-rich Ge1-x-ySixSny alloys (2-4% Si and 4-10% Sn) were fabricated directly on Si and were found to show significant optical emission using photoluminescence measurements, indicating that the alloys have direct band gaps below that of pure Ge in the range of 0.7-0.55 eV. A series of Sn-rich Ge1-x-ySixSny analogues (y>x) with fixed 3-4% Si content and progressively increasing Sn content in the 4-10% range were then grown on Ge buffered Si platforms for the purpose of improving the material's crystal quality. The films in this case exhibited lower defect densities than those grown on Si, allowing a meaningful study of both the direct and indirect gaps. The results show that the separation of the direct and indirect edges can be made smaller than in Ge even for non-negligible 3-4% Si content, confirming that with a suitable choice of Sn compositions the ternary Ge1-x-ySixSny reproduces all features of the electronic structure of binary Ge1-ySny, including the sought-after indirect-to-direct gap cross over. The above synthesis of optical quality Ge1-x-ySixSny on virtual Ge was made possible by the development of high quality Ge-on-Si buffers via chemical vapor deposition of Ge4H10. The resultant films exhibited structural and electrical properties significantly improved relative to state-of-the-art results obtained using conventional approaches. It was found that pure Ge4H10 facilitates the control of residual doping and enables p-i-n devices whose dark currents are not entirely determined by defects and whose zero-bias collection efficiencies are higher than those obtained from samples fabricated using alternative Ge-on-Si approaches.
ContributorsXu, Chi (Author) / Kouvetakis, John (Thesis advisor) / Menéndez, Jose (Thesis advisor) / Chizmeshya, Andrew (Committee member) / Drucker, Jeffrey (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2013
Description
In this thesis we deal with the problem of temporal logic robustness estimation. We present a dynamic programming algorithm for the robust estimation problem of Metric Temporal Logic (MTL) formulas regarding a finite trace of time stated sequence. This algorithm not only tests if the MTL specification is satisfied by the given input which is a finite system trajectory, but also quantifies to what extend does the sequence satisfies or violates the MTL specification. The implementation of the algorithm is the DP-TALIRO toolbox for MATLAB. Currently it is used as the temporal logic robust computing engine of S-TALIRO which is a tool for MATLAB searching for trajectories of minimal robustness in Simulink/ Stateflow. DP-TALIRO is expected to have near linear running time and constant memory requirement depending on the structure of the MTL formula. DP-TALIRO toolbox also integrates new features not supported in its ancestor FW-TALIRO such as parameter replacement, most related iteration and most related predicate. A derivative of DP-TALIRO which is DP-T-TALIRO is also addressed in this thesis which applies dynamic programming algorithm for time robustness computation. We test the running time of DP-TALIRO and compare it with FW-TALIRO. Finally, we present an application where DP-TALIRO is used as the robustness computation core of S-TALIRO for a parameter estimation problem.
ContributorsYang, Hengyi (Author) / Fainekos, Georgios (Thesis advisor) / Sarjoughian, Hessam S. (Committee member) / Shrivastava, Aviral (Committee member) / Arizona State University (Publisher)
Created2013
Description
The initial microstructure of oxide fuel pellets can play a key role in their performance. At low burnups, the transport of fission products has a strong dependence on oxygen content, grain size distribution, porosity and grain boundary (GB) characteristics (crystallography, geometry and topology), all of which, in turn depend on processing conditions. These microstructural features can also affect the fuel densification, thermal conductivity and microstructure evolution inside the reactor. Understanding these effects can provide insight into microstructure evolution of fuels in-pile. In this work, mechanical and ion beam serial sectioning techniques were developed to obtain Electron Backscatter Diffraction (EBSD) data, both in 2-D and 3-D, for depleted UO2+X pellets manufactured under different conditions. The EBSD maps were used to relate processing conditions to microstructural features, with emphasis on special GBs according to the Coincident Site Lattice (CSL) model, as well as correlations between pore size and location in the microstructure. Furthermore, larger grains (at least 2.5 times the average grain size) were observed in all the samples and studied. Results indicate that larger grains, in samples manufactured under different conditions, dominate the overall crystallographic texture and have a fairly strong GB texture. Moreover, it seems that the preferential misorientation axis for these GBs, regardless of the O/M, is {001}. These results might be related to GB energy and structure and, suggest that the mechanism that controls grain growth seems to be independent of both processing conditions and stoichiometry. Additionally, a sample was heat treated to relate grain growth and crystallography. The results indicate that at least two mechanisms were involved. Lengthening of GBs was observed for larger grains. Another mechanism of grain growth was observed, in this case, grains rotate to match a neighboring grain forming a larger grain. In the new grain, the misorientation between the two neighboring grains decreases to less than 5 degrees, forming a new larger grain. The results presented in this work indicate that detailed studies of the initial microstructure of the fuel, with emphasis on the crystallography of grains and GBs could help to give insights on the in-pile microstructural evolution of the fuel.
ContributorsRudman Prieto, Karin (Author) / Peralta, Pedro (Thesis advisor) / Ponce, Fernando (Committee member) / Sieradski, Karl (Committee member) / Arizona State University (Publisher)
Created2014
Description
Software has a great impact on the energy efficiency of any computing system--it can manage the components of a system efficiently or inefficiently. The impact of software is amplified in the context of a wearable computing system used for activity recognition. The design space this platform opens up is immense and encompasses sensors, feature calculations, activity classification algorithms, sleep schedules, and transmission protocols. Design choices in each of these areas impact energy use, overall accuracy, and usefulness of the system. This thesis explores methods software can influence the trade-off between energy consumption and system accuracy. In general the more energy a system consumes the more accurate will be. We explore how finding the transitions between human activities is able to reduce the energy consumption of such systems without reducing much accuracy. We introduce the Log-likelihood Ratio Test as a method to detect transitions, and explore how choices of sensor, feature calculations, and parameters concerning time segmentation affect the accuracy of this method. We discovered an approximate 5X increase in energy efficiency could be achieved with only a 5% decrease in accuracy. We also address how a system's sleep mode, in which the processor enters a low-power state and sensors are turned off, affects a wearable computing platform that does activity recognition. We discuss the energy trade-offs in each stage of the activity recognition process. We find that careful analysis of these parameters can result in great increases in energy efficiency if small compromises in overall accuracy can be tolerated. We call this the ``Great Compromise.'' We found a 6X increase in efficiency with a 7% decrease in accuracy. We then consider how wireless transmission of data affects the overall energy efficiency of a wearable computing platform. We find that design decisions such as feature calculations and grouping size have a great impact on the energy consumption of the system because of the amount of data that is stored and transmitted. For example, storing and transmitting vector-based features such as FFT or DCT do not compress the signal and would use more energy than storing and transmitting the raw signal. The effect of grouping size on energy consumption depends on the feature. For scalar features energy consumption is proportional in the inverse of grouping size, so it's reduced as grouping size goes up. For features that depend on the grouping size, such as FFT, energy increases with the logarithm of grouping size, so energy consumption increases slowly as grouping size increases. We find that compressing data through activity classification and transition detection significantly reduces energy consumption and that the energy consumed for the classification overhead is negligible compared to the energy savings from data compression. We provide mathematical models of energy usage and data generation, and test our ideas using a mobile computing platform, the Texas Instruments Chronos watch.
ContributorsBoyd, Jeffrey Michael (Author) / Sundaram, Hari (Thesis advisor) / Li, Baoxin (Thesis advisor) / Shrivastava, Aviral (Committee member) / Turaga, Pavan (Committee member) / Arizona State University (Publisher)
Created2014
Description
Stream processing has emerged as an important model of computation especially in the context of multimedia and communication sub-systems of embedded System-on-Chip (SoC) architectures. The dataflow nature of streaming applications allows them to be most naturally expressed as a set of kernels iteratively operating on continuous streams of data. The kernels are computationally intensive and are mainly characterized by real-time constraints that demand high throughput and data bandwidth with limited global data reuse. Conventional architectures fail to meet these demands due to their poorly matched execution models and the overheads associated with instruction and data movements.
This work presents StreamWorks, a multi-core embedded architecture for energy-efficient stream computing. The basic processing element in the StreamWorks architecture is the StreamEngine (SE) which is responsible for iteratively executing a stream kernel. SE introduces an instruction locking mechanism that exploits the iterative nature of the kernels and enables fine-grain instruction reuse. Each instruction in a SE is locked to a Reservation Station (RS) and revitalizes itself after execution; thus never retiring from the RS. The entire kernel is hosted in RS Banks (RSBs) close to functional units for energy-efficient instruction delivery. The dataflow semantics of stream kernels are captured by a context-aware dataflow execution mode that efficiently exploits the Instruction Level Parallelism (ILP) and Data-level parallelism (DLP) within stream kernels.
Multiple SEs are grouped together to form a StreamCluster (SC) that communicate via a local interconnect. A novel software FIFO virtualization technique with split-join functionality is proposed for efficient and scalable stream communication across SEs. The proposed communication mechanism exploits the Task-level parallelism (TLP) of the stream application. The performance and scalability of the communication mechanism is evaluated against the existing data movement schemes for scratchpad based multi-core architectures. Further, overlay schemes and architectural support are proposed that allow hosting any number of kernels on the StreamWorks architecture. The proposed oevrlay schemes for code management supports kernel(context) switching for the most common use cases and can be adapted for any multi-core architecture that use software managed local memories.
The performance and energy-efficiency of the StreamWorks architecture is evaluated for stream kernel and application benchmarks by implementing the architecture in 45nm TSMC and comparison with a low power RISC core and a contemporary accelerator.
This work presents StreamWorks, a multi-core embedded architecture for energy-efficient stream computing. The basic processing element in the StreamWorks architecture is the StreamEngine (SE) which is responsible for iteratively executing a stream kernel. SE introduces an instruction locking mechanism that exploits the iterative nature of the kernels and enables fine-grain instruction reuse. Each instruction in a SE is locked to a Reservation Station (RS) and revitalizes itself after execution; thus never retiring from the RS. The entire kernel is hosted in RS Banks (RSBs) close to functional units for energy-efficient instruction delivery. The dataflow semantics of stream kernels are captured by a context-aware dataflow execution mode that efficiently exploits the Instruction Level Parallelism (ILP) and Data-level parallelism (DLP) within stream kernels.
Multiple SEs are grouped together to form a StreamCluster (SC) that communicate via a local interconnect. A novel software FIFO virtualization technique with split-join functionality is proposed for efficient and scalable stream communication across SEs. The proposed communication mechanism exploits the Task-level parallelism (TLP) of the stream application. The performance and scalability of the communication mechanism is evaluated against the existing data movement schemes for scratchpad based multi-core architectures. Further, overlay schemes and architectural support are proposed that allow hosting any number of kernels on the StreamWorks architecture. The proposed oevrlay schemes for code management supports kernel(context) switching for the most common use cases and can be adapted for any multi-core architecture that use software managed local memories.
The performance and energy-efficiency of the StreamWorks architecture is evaluated for stream kernel and application benchmarks by implementing the architecture in 45nm TSMC and comparison with a low power RISC core and a contemporary accelerator.
ContributorsPanda, Amrit (Author) / Chatha, Karam S. (Thesis advisor) / Wu, Carole-Jean (Thesis advisor) / Chakrabarti, Chaitali (Committee member) / Shrivastava, Aviral (Committee member) / Arizona State University (Publisher)
Created2014