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Estimations of reductions in household vehicle miles traveled under scenarios of shifts in vehicle type choice

Description

Vehicle type choice is a significant determinant of fuel consumption and energy sustainability; larger, heavier vehicles consume more fuel, and expel twice as many pollutants, than their smaller, lighter counterparts. Over the course of the past few decades, vehicle type choice has seen a vast shift, due to many households…

Vehicle type choice is a significant determinant of fuel consumption and energy sustainability; larger, heavier vehicles consume more fuel, and expel twice as many pollutants, than their smaller, lighter counterparts. Over the course of the past few decades, vehicle type choice has seen a vast shift, due to many households making more trips in larger vehicles with lower fuel economy. During the 1990s, SUVs were the fastest growing segment of the automotive industry, comprising 7% of the total light vehicle market in 1990, and 25% in 2005. More recently, due to rising oil prices, greater awareness to environmental sensitivity, the desire to reduce dependence on foreign oil, and the availability of new vehicle technologies, many households are considering the use of newer vehicles with better fuel economy, such as hybrids and electric vehicles, over the use of the SUV or low fuel economy vehicles they may already own. The goal of this research is to examine how vehicle miles traveled, fuel consumption and emissions may be reduced through shifts in vehicle type choice behavior. Using the 2009 National Household Travel Survey data it is possible to develop a model to estimate household travel demand and total fuel consumption. If given a vehicle choice shift scenario, using the model it would be possible to calculate the potential fuel consumption savings that would result from such a shift. In this way, it is possible to estimate fuel consumption reductions that would take place under a wide variety of scenarios.

ContributorsChristian, Keith (Author) / Pendyala, Ram M. (Thesis advisor) / Chester, Mikhail (Committee member) / Kaloush, Kamil (Committee member) / Ahn, Soyoung (Committee member) / Arizona State University (Publisher)

Created2013

Synthesis and characterization of erbium compound nanowires as high gain optical materials

Description

Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1 x 1020 cm-3,…

Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1 x 1020 cm-3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonics applications. Er compounds could potentially solve this problem since they contain much higher Er density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor quality of crystals produced by various methods of thin film growth and deposition. This dissertation explores a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl ) in the nanowire form, which facilitates the growth of high quality single crystals. Growth methods for such single crystal ECS nanowires have been established. Various structural and optical characterizations have been carried out. The high crystal quality of ECS material leads to a long lifetime of the first excited state of Er3+ ions up to 1 ms at Er density higher than 1022 cm-3. This Er lifetime-density product was found to be the largest among all Er containing materials. A unique integrating sphere method was developed to measure the absorption cross section of ECS nanowires from 440 to 1580 nm. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement from a single ECS wire. It was estimated that such large signal enhancement can overcome the absorption to result in a net material gain, but not sufficient to compensate waveguide propagation loss. In order to suppress the upconversion process in ECS, Ytterbium (Yb) and Yttrium (Y) ions are introduced as substituent ions of Er in the ECS crystal structure to reduce Er density. While the addition of Yb ions only partially succeeded, erbium yttrium chloride silicate (EYCS) with controllable Er density was synthesized successfully. EYCS with 30 at. % Er was found to be the best. It shows the strongest PL emission at 1.5 μm, and thus can be potentially used as a high gain material.

ContributorsYin, Leijun (Author) / Ning, Cun-Zheng (Thesis advisor) / Chamberlin, Ralph (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)

Created2013

Plasma surface interactions at interlayer dielectric (ILD) and metal surfaces

Description

In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals…

In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals in the plasma react with the carbon groups leading to carbon removal for the ILD films. Results indicate that an N2 plasma forms an amide-like layer on the surface which apparently leads to reduced carbon abstraction from an H2 plasma process. In addition, FTIR spectra indicate the formation of hydroxyl (Si-OH) groups following the plasma exposure. Increased temperature (380 °C) processing leads to a reduction of the hydroxyl group formation compared to ambient temperature processes, resulting in reduced changes of the dielectric constant. For CMP Cu surfaces, the carbonate contamination was removed by an H2 plasma process at elevated temperature while the C-C and C-H contamination was removed by an N2 plasma process at elevated temperature. The second part of this study examined oxide stability and cleaning of Ru surfaces as well as consequent Cu film thermal stability with the Ru layers. The ~2 monolayer native Ru oxide was reduced after H-plasma processing. The thermal stability or islanding of the Cu film on the Ru substrate was characterized by in-situ XPS. After plasma cleaning of the Ru adhesion layer, the deposited Cu exhibited full coverage. In contrast, for Cu deposition on the Ru native oxide substrate, Cu islanding was detected and was described in terms of grain boundary grooving and surface and interface energies. The thermal stability of 7 nm Ti, Pt and Ru ii interfacial adhesion layers between a Cu film (10 nm) and a Ta barrier layer (4 nm) have been investigated in the third part. The barrier properties and interfacial stability have been evaluated by Rutherford backscattering spectrometry (RBS). Atomic force microscopy (AFM) was used to measure the surfaces before and after annealing, and all the surfaces are relatively smooth excluding islanding or de-wetting phenomena as a cause of the instability. The RBS showed no discernible diffusion across the adhesion layer/Ta and Ta/Si interfaces which provides a stable underlying layer. For a Ti interfacial layer RBS indicates that during 400 °C annealing Ti interdiffuses through the Cu film and accumulates at the surface. For the Pt/Cu system Pt interdiffuion is detected which is less evident than Ti. Among the three adhesion layer candidates, Ru shows negligible diffusion into the Cu film indicating thermal stability at 400 °C.

ContributorsLiu, Xin (Author) / Nemanich, Robert (Thesis advisor) / Chamberlin, Ralph (Committee member) / Chen, Tingyong (Committee member) / Smith, David (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)

Created2012

Interface electronic state characterization of plasma enhanced atomic layer deposited dielectrics on GaN

Description

In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD…

In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN. The first study involved an in-depth case study of PEALD Al2O3 growth using dimethylaluminum isopropoxide, with a special focus on oxygen plasma effects. Saturated and self-limiting growth of Al2O3 films were obtained with an enhanced growth rate within the PEALD temperature window (25-220 ºC). The properties of Al2O3 deposited at various temperatures were characterized to better understand the relation between the growth parameters and film properties. In the second study, the interface electronic structures of PEALD dielectrics on Ga-face GaN films were measured. Five promising dielectrics (Al2O3, HfO2, SiO2, La2O3, and ZnO) with a range of band gap energies were chosen. Prior to dielectric growth, a combined wet chemical and in-situ H2/N2 plasma clean process was employed to remove the carbon contamination and prepare the surface for dielectric deposition. The surface band bending and band offsets were measured by XPS and UPS for dielectrics on GaN. The trends of the experimental band offsets on GaN were related to the dielectric band gap energies. In addition, the experimental band offsets were near the calculated values based on the charge neutrality level model. The third study focused on the effect of the polarization bound charge of the Ga- and N-face GaN on interface electronic structures. A surface pretreatment process consisting of a NH4OH wet chemical and an in-situ NH3 plasma treatment was applied to remove carbon contamination, retain monolayer oxygen coverage, and potentially passivate N-vacancy related defects. The surface band bending and polarization charge compensation of Ga- and N-face GaN were investigated. The surface band bending and band offsets were determined for Al2O3, HfO2, and SiO2 on Ga- and N-face GaN. Different dielectric thicknesses and post deposition processing were investigated to understand process related defect formation and/or reduction.

ContributorsYang, Jialing (Author) / Nemanich, Robert J (Thesis advisor) / Chen, Tingyong (Committee member) / Peng, Xihong (Committee member) / Ponce, Fernando (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)

Created2014

Combined photo- and thermionic electron emission from low work function diamond films

Description

In this dissertation, combined photo-induced and thermionic electron emission from low work function diamond films is studied through low energy electron spectroscopy analysis and other associated techniques. Nitrogen-doped, hydrogen-terminated diamond films prepared by the microwave plasma chemical vapor deposition method have been the most focused material. The theme of this…

In this dissertation, combined photo-induced and thermionic electron emission from low work function diamond films is studied through low energy electron spectroscopy analysis and other associated techniques. Nitrogen-doped, hydrogen-terminated diamond films prepared by the microwave plasma chemical vapor deposition method have been the most focused material. The theme of this research is represented by four interrelated issues. (1) An in-depth study describes combined photo-induced and thermionic emission from nitrogen-doped diamond films on molybdenum substrates, which were illuminated with visible light photons, and the electron emission spectra were recorded as a function of temperature. The diamond films displayed significant emissivity with a low work function of ~ 1.5 eV. The results indicate that these diamond emitters can be applied in combined solar and thermal energy conversion. (2) The nitrogen-doped diamond was further investigated to understand the physical mechanism and material-related properties that enable the combined electron emission. Through analysis of the spectroscopy, optical absorbance and photoelectron microscopy results from sample sets prepared with different configurations, it was deduced that the photo-induced electron generation involves both the ultra-nanocrystalline diamond and the interface between the diamond film and metal substrate. (3) Based on results from the first two studies, possible photon-enhanced thermionic emission was examined from nitrogen-doped diamond films deposited on silicon substrates, which could provide the basis for a novel approach for concentrated solar energy conversion. A significant increase of emission intensity was observed at elevated temperatures, which was analyzed using computer-based modeling and a combination of different emission mechanisms. (4) In addition, the electronic structure of vanadium-oxide-terminated diamond surfaces was studied through in-situ photoemission spectroscopy. Thin layers of vanadium were deposited on oxygen-terminated diamond surfaces which led to oxide formation. After thermal annealing, a negative electron affinity was found on boron-doped diamond, while a positive electron affinity was found on nitrogen-doped diamond. A model based on the barrier at the diamond-oxide interface was employed to analyze the results. Based on results of this dissertation, applications of diamond-based energy conversion devices for combined solar- and thermal energy conversion are proposed.

ContributorsSun, Tianyin (Author) / Nemanich, Robert (Thesis advisor) / Ponce, Fernando (Committee member) / Peng, Xihong (Committee member) / Spence, John (Committee member) / Treacy, Michael (Committee member) / Arizona State University (Publisher)

Created2013

Synthesis and band gap engineering in Ge₁-x-ySixSny Materials for Near-IR Wavelength Applications

Description

This thesis describes the fabrication of several new classes of Ge1-x-ySixSny materials with the required compositions and crystal quality to engineer the band gaps above and below that of elemental Ge (0.8 eV) in the near IR. The work initially focused on Ge1-x-ySixSny (1-5% Sn, 4-20% Si) materials grown on…

This thesis describes the fabrication of several new classes of Ge1-x-ySixSny materials with the required compositions and crystal quality to engineer the band gaps above and below that of elemental Ge (0.8 eV) in the near IR. The work initially focused on Ge1-x-ySixSny (1-5% Sn, 4-20% Si) materials grown on Ge(100) via gas-source epitaxy of Ge4H10, Si4H10 and SnD4. Both intrinsic and doped layers were produced with defect-free microstructure and viable thickness, allowing the fabrication of high-performance photodetectors. These exhibited low ideality factors, state-of-the-art dark current densities and adjustable absorption edges between 0.87 and 1.03 eV, indicating that the band gaps span a significant range above that of Ge. Next Sn-rich Ge1-x-ySixSny alloys (2-4% Si and 4-10% Sn) were fabricated directly on Si and were found to show significant optical emission using photoluminescence measurements, indicating that the alloys have direct band gaps below that of pure Ge in the range of 0.7-0.55 eV. A series of Sn-rich Ge1-x-ySixSny analogues (y>x) with fixed 3-4% Si content and progressively increasing Sn content in the 4-10% range were then grown on Ge buffered Si platforms for the purpose of improving the material's crystal quality. The films in this case exhibited lower defect densities than those grown on Si, allowing a meaningful study of both the direct and indirect gaps. The results show that the separation of the direct and indirect edges can be made smaller than in Ge even for non-negligible 3-4% Si content, confirming that with a suitable choice of Sn compositions the ternary Ge1-x-ySixSny reproduces all features of the electronic structure of binary Ge1-ySny, including the sought-after indirect-to-direct gap cross over. The above synthesis of optical quality Ge1-x-ySixSny on virtual Ge was made possible by the development of high quality Ge-on-Si buffers via chemical vapor deposition of Ge4H10. The resultant films exhibited structural and electrical properties significantly improved relative to state-of-the-art results obtained using conventional approaches. It was found that pure Ge4H10 facilitates the control of residual doping and enables p-i-n devices whose dark currents are not entirely determined by defects and whose zero-bias collection efficiencies are higher than those obtained from samples fabricated using alternative Ge-on-Si approaches.

ContributorsXu, Chi (Author) / Kouvetakis, John (Thesis advisor) / Menéndez, Jose (Thesis advisor) / Chizmeshya, Andrew (Committee member) / Drucker, Jeffrey (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)

Created2013

Effect on processing conditions on grain boundary character distribution and mobility in nuclear fuels

Description

The initial microstructure of oxide fuel pellets can play a key role in their performance. At low burnups, the transport of fission products has a strong dependence on oxygen content, grain size distribution, porosity and grain boundary (GB) characteristics (crystallography, geometry and topology), all of which, in turn depend on…

The initial microstructure of oxide fuel pellets can play a key role in their performance. At low burnups, the transport of fission products has a strong dependence on oxygen content, grain size distribution, porosity and grain boundary (GB) characteristics (crystallography, geometry and topology), all of which, in turn depend on processing conditions. These microstructural features can also affect the fuel densification, thermal conductivity and microstructure evolution inside the reactor. Understanding these effects can provide insight into microstructure evolution of fuels in-pile. In this work, mechanical and ion beam serial sectioning techniques were developed to obtain Electron Backscatter Diffraction (EBSD) data, both in 2-D and 3-D, for depleted UO2+X pellets manufactured under different conditions. The EBSD maps were used to relate processing conditions to microstructural features, with emphasis on special GBs according to the Coincident Site Lattice (CSL) model, as well as correlations between pore size and location in the microstructure. Furthermore, larger grains (at least 2.5 times the average grain size) were observed in all the samples and studied. Results indicate that larger grains, in samples manufactured under different conditions, dominate the overall crystallographic texture and have a fairly strong GB texture. Moreover, it seems that the preferential misorientation axis for these GBs, regardless of the O/M, is {001}. These results might be related to GB energy and structure and, suggest that the mechanism that controls grain growth seems to be independent of both processing conditions and stoichiometry. Additionally, a sample was heat treated to relate grain growth and crystallography. The results indicate that at least two mechanisms were involved. Lengthening of GBs was observed for larger grains. Another mechanism of grain growth was observed, in this case, grains rotate to match a neighboring grain forming a larger grain. In the new grain, the misorientation between the two neighboring grains decreases to less than 5 degrees, forming a new larger grain. The results presented in this work indicate that detailed studies of the initial microstructure of the fuel, with emphasis on the crystallography of grains and GBs could help to give insights on the in-pile microstructural evolution of the fuel.

ContributorsRudman Prieto, Karin (Author) / Peralta, Pedro (Thesis advisor) / Ponce, Fernando (Committee member) / Sieradski, Karl (Committee member) / Arizona State University (Publisher)

Created2014

Development of paint stripe testing protocol

Description

Nighttime visibility of pavement markings is provided by glass beads embedded into the striping surface. The glass beads take light from the vehicle headlamps and reflect it back to the driver. This phenomenon is known as retroreflection. Literature suggests that the amount of the bead embedded into the striping surface…

Nighttime visibility of pavement markings is provided by glass beads embedded into the striping surface. The glass beads take light from the vehicle headlamps and reflect it back to the driver. This phenomenon is known as retroreflection. Literature suggests that the amount of the bead embedded into the striping surface has a profound impact on the intensity of the retroreflected light. In order to gain insight into how the glass beads provide retroreflection, an experiment was carried out to produce paint stripes with glass beads and measure the retroreflection. Samples were created at various application rates and embedment depths, in an attempt to verify the optimal embedment and observe the effect of application rate on retroreflection. The experiment was conducted using large, airport quality beads and small, road quality beads. Image analysis was used to calculate the degree to which beads were embedded and in an attempt to quantify bead distribution on the stripe surface. The results from the large beads showed that retroreflection was maximized when the beads were embedded approximately seventy percent by bead volume. The results also showed that as the application rate increased, the retroreflection increased, up to a point and then decreased. A model was developed to estimate the retroreflectivity given the amount of beads, bead spacing, and distribution of bead embedment. Results from the small beads were less conclusive, but did demonstrate that the larger beads are better at providing retroreflection. Avenues for future work in this area were identified as the experiment was conducted.

ContributorsStevens, Ryan David (Author) / Underwood, Shane (Thesis advisor) / Kaloush, Kamil (Committee member) / Mamlouk, Michael S. (Committee member) / Arizona State University (Publisher)

Created2014

Demographic evolution modeling system for activity-based travel behavior analysis and demand forecasting

Description

The activity-based approach to travel demand analysis and modeling, which has been developed over the past 30 years, has received tremendous success in transportation planning and policy analysis issues, capturing the multi-way joint relationships among socio-demographic, economic, land use characteristics, activity participation, and travel behavior. The development of synthesizing population…

The activity-based approach to travel demand analysis and modeling, which has been developed over the past 30 years, has received tremendous success in transportation planning and policy analysis issues, capturing the multi-way joint relationships among socio-demographic, economic, land use characteristics, activity participation, and travel behavior. The development of synthesizing population with an array of socio-demographic and socio-economic attributes has drawn remarkable attention due to privacy and cost constraints in collecting and disclosing full scale data. Although, there has been enormous progress in producing synthetic population, there has been less progress in the development of population evolution modeling arena to forecast future year population. The objective of this dissertation is to develop a well-structured full-fledged demographic evolution modeling system, capturing migration dynamics and evolution of person level attributes, introducing the concept of new household formations and apprehending the dynamics of household level long-term choices over time. A comprehensive study has been conducted on demography, sociology, anthropology, economics and transportation engineering area to better understand the dynamics of evolutionary activities over time and their impacts in travel behavior. This dissertation describes the methodology and the conceptual framework, and the development of model components. Demographic, socio-economic, and land use data from American Community Survey, National Household Travel Survey, Census PUMS, United States Time Series Economic Dynamic data and United States Center for Disease Control and Prevention have been used in this research. The entire modeling system has been implemented and coded using programming language to develop the population evolution module named `PopEvol' into a computer simulation environment. The module then has been demonstrated for a portion of Maricopa County area in Arizona to predict the milestone year population to check the accuracy of forecasting. The module has also been used to evolve the base year population for next 15 years and the evolutionary trend has been investigated.

ContributorsPaul, Sanjay (Author) / Pendyala, Ram M. (Thesis advisor) / Kaloush, Kamil (Committee member) / Ahn, Soyoung (Committee member) / Arizona State University (Publisher)

Created2014

Use of micro-mechanical models to study the mastic level structure of asphalt concretes containing reclaimed asphalt pavement

Description

This study investigates the mastic level structure of asphalt concrete containing RAP materials. Locally sourced RAP material was screened and sieved to separate the coated fines (passing #200) from the remaining sizes. These binder coated fines were mixed with virgin filler at proportions commensurate with 0%, 10%, 30%, 50% and…

This study investigates the mastic level structure of asphalt concrete containing RAP materials. Locally sourced RAP material was screened and sieved to separate the coated fines (passing #200) from the remaining sizes. These binder coated fines were mixed with virgin filler at proportions commensurate with 0%, 10%, 30%, 50% and 100% RAP dosage levels. Mastics were prepared with these blended fillers and a PG 64-22 binder at a filler content of 27% by volume. Rheological experiments were conducted on the resulting composites as well as the constituents, virgin binder, solvent extracted RAP binder. The results from the dynamic modulus experiments showed an expected increase in stiffness with increase in dosage levels. These results were used to model the hypothesized structure of the composite. The study presented discusses the different micromechanical models employed, their applicability and suitability to correctly predict the blended mastic composite. The percentage of blending between virgin and RAP binder estimated using Herve and Zaoui model decreased with increase in RAP content.

ContributorsGundla, Akshay (Author) / Underwood, Shane (Thesis advisor) / Kaloush, Kamil (Committee member) / Mamlouk, Michael S. (Committee member) / Arizona State University (Publisher)

Created2014

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