ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 112
Description
This study presents the results of one of the first attempts to characterize the pore water pressure response of soils subjected to traffic loading under saturated and unsaturated conditions. It is widely known that pore water pressure develops within the soil pores as a response to external stimulus. Also, it has been recognized that the development of pores water pressure contributes to the degradation of the resilient modulus of unbound materials. In the last decades several efforts have been directed to model the effect of air and water pore pressures upon resilient modulus. However, none of them consider dynamic variations in pressures but rather are based on equilibrium values corresponding to initial conditions. The measurement of this response is challenging especially in soils under unsaturated conditions. Models are needed not only to overcome testing limitations but also to understand the dynamic behavior of internal pore pressures that under critical conditions may even lead to failure. A testing program was conducted to characterize the pore water pressure response of a low plasticity fine clayey sand subjected to dynamic loading. The bulk stress, initial matric suction and dwelling time parameters were controlled and their effects were analyzed. The results were used to attempt models capable of predicting the accumulated excess pore pressure at any given time during the traffic loading and unloading phases. Important findings regarding the influence of the controlled variables challenge common beliefs. The accumulated excess pore water pressure was found to be higher for unsaturated soil specimens than for saturated soil specimens. The maximum pore water pressure always increased when the high bulk stress level was applied. Higher dwelling time was found to decelerate the accumulation of pore water pressure. In addition, it was found that the higher the dwelling time, the lower the maximum pore water pressure. It was concluded that upon further research, the proposed models may become a powerful tool not only to overcome testing limitations but also to enhance current design practices and to prevent soil failure due to excessive development of pore water pressure.
ContributorsCary, Carlos (Author) / Zapata, Claudia E (Thesis advisor) / Wiczak, Matthew W (Thesis advisor) / Kaloush, Kamil (Committee member) / Sandra, Houston (Committee member) / Arizona State University (Publisher)
Created2011
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows this function to be performed with a single chip thereby cutting costs. The ability for the MESFET to cost effectively satisfy the needs of this any many other high current/voltage device application markets is what drives the study of MESFET optimization. Silicon MESFETs that are integrated into standard SOI CMOS processes often receive dopings during fabrication that would not ideally be there in a process made exclusively for MESFETs. Since these remnants of SOI CMOS processing effect the operation of a MESFET device, their effect can be seen in the current-voltage characteristics of a measured MESFET device. Device simulations are done and compared to measured silicon MESFET data in order to deduce the cause and effect of many of these SOI CMOS remnants. MESFET devices can be made in both fully depleted (FD) and partially depleted (PD) SOI CMOS technologies. Device simulations are used to do a comparison of FD and PD MESFETs in order to show the advantages and disadvantages of MESFETs fabricated in different technologies. It is shown that PD MESFET have the highest current per area capability. Since the PD MESFET is shown to have the highest current capability, a layout optimization method to further increase the current per area capability of the PD silicon MESFET is presented, derived, and proven to a first order.
ContributorsSochacki, John (Author) / Thornton, Trevor J (Thesis advisor) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
Description
The structural design of pavements in both highways and airfields becomes complex when one considers environmental effects and ground water table variation. Environmental effects have been incorporated on the new Mechanistic-Empirical Pavement Design Guide (MEPDG) but little has been done to incorporate environmental effects on airfield design. This work presents a developed code produced from this research study called ZAPRAM, which is a mechanistically based pavement model based upon Limiting Strain Criteria in airfield HMA pavement design procedures. ZAPRAM is capable of pavement and airfield design analyses considering environmental effects. The program has been coded in Visual Basic and implemented in an event-driven, user-friendly educational computer program, which runs in Excel environment. Several studies were conducted in order to insure the validity of the analysis as well as the efficiency of the software. The first study yielded the minimum threshold number of computational points the user should use at a specific depth within the pavement system. The second study was completed to verify the correction factor for the Odemark's transformed thickness equation. Default correction factors were included in the code base on a large comparative study between Odemark's and MLET. A third study was conducted to provide a comparison of flexible airfield pavement design thicknesses derived from three widely accepted design procedures used in practice today: the Asphalt Institute, Shell Oil, and the revised Corps of Engineering rutting failure criteria to calculate the thickness requirements necessary for a range of design input variables. The results of the comparative study showed that there is a significant difference between the pavement thicknesses obtained from the three design procedures, with the greatest deviation found between the Shell Oil approach and the other two criteria. Finally, a comprehensive sensitivity study of environmental site factors and the groundwater table depth upon flexible airfield pavement design and performance was completed. The study used the newly revised USACE failure criteria for subgrade shear deformation. The methodology utilized the same analytical methodology to achieve real time environmental effects upon unbound layer modulus, as that used in the new AASHTO MEPDG. The results of this effort showed, for the first time, the quantitative impact of the significant effects of the climatic conditions at the design site, coupled with the importance of the depth of the groundwater table, on the predicted design thicknesses. Significant cost savings appear to be quite reasonable by utilizing principles of unsaturated soil mechanics into the new airfield pavement design procedure found in program ZAPRAM.
ContributorsSalim, Ramadan A (Author) / Zapata, Claudia (Thesis advisor) / Witczak, Matthew (Thesis advisor) / Kaloush, Kamil (Committee member) / Arizona State University (Publisher)
Created2011
Description
A primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (~ 80 %). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface.
ContributorsGhosha, Kuṇāla (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Thesis advisor) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2011
Description
Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in thesis addresses these points. I simulated the carrier densities, potentials, electric fields etc. of MOSFETs, BJTs and JFETs at and near the pinch-off regions to determine exactly what happens there. I also simulated the behavior of the quasi-Fermi levels. For MOSFETs, the channel thickness expands slightly before the pinch-off point and then spreads out quickly in a triangular shape and the space-charge region under the channel actually shrinks as the potential increases from source to drain. For BJTs, with collector-base junction reverse biased, most minority carriers diffuse through the base from emitter to collector very fast, but the minority carrier concentration at the collector-base space-charge region is not zero. For JFETs, the boundaries of the space-charge region are difficult to determine, the channel does not disappear after pinch off, the shape of channel is always tapered, and the carrier concentration in the channel decreases progressively. After simulating traditional sized devices, I also simulated typical nano-scaled devices and show that they behave similarly to large devices. These simulation results provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.
ContributorsYang, Xuan (Author) / Schroder, Dieter K. (Thesis advisor) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
Description
Silicon solar cells with heterojunction carrier collectors based on a-Si/c-Si heterojunction (SHJ) have a potential to overcome the limitations of the conventional diffused junction solar cells and become the next industry standard manufacturing technology of solar cells. A brand feature of SHJ technology is ultrapassivated surfaces with already demonstrated 750 mV open circuit voltages (Voc) and 24.7% efficiency on large area solar cell. Despite very good results achieved in research and development, large volume manufacturing of high efficiency SHJ cells remains a fundamental challenge. The main objectives of this work were to develop a SHJ solar cell fabrication flow using industry compatible tools and processes in a pilot production environment, study the interactions between the used fabrication steps, identify the minimum set of optimization parameters and characterization techniques needed to achieve 20% baseline efficiency, and analyze the losses of power in fabricated SHJ cells by numerical and analytical modeling. This manuscript presents a detailed description of a SHJ solar cell fabrication flow developed at ASU Solar Power Laboratory (SPL) which allows large area solar cells with >750 mV Voc. SHJ cells on 135 um thick 153 cm2 area wafers with 19.5% efficiency were fabricated. Passivation quality of (i)a-Si:H film, bulk conductivity of doped a-Si films, bulk conductivity of ITO, transmission of ITO and the thickness of all films were identified as the minimum set of optimization parameters necessary to set up a baseline high efficiency SHJ fabrication flow. The preparation of randomly textured wafers to minimize the concentration of surface impurities and to avoid epitaxial growth of a-Si films was found to be a key challenge in achieving a repeatable and uniform passivation. This work resolved this issue by using a multi-step cleaning process based on sequential oxidation in nitric/acetic acids, Piranha and RCA-b solutions. The developed process allowed state of the art surface passivation with perfect repeatability and negligible reflectance losses. Two additional studies demonstrated 750 mV local Voc on 50 micron thick SHJ solar cell and < 1 cm/s effective surface recombination velocity on n-type wafers passivated by a-Si/SiO2/SiNx stack.
ContributorsHerasimenka, Stanislau Yur'yevich (Author) / Honsberg, C. (Christiana B.) (Thesis advisor) / Bowden, Stuart G (Thesis advisor) / Tracy, Clarence (Committee member) / Vasileska, Dragica (Committee member) / Holman, Zachary (Committee member) / Sinton, Ron (Committee member) / Arizona State University (Publisher)
Created2013
Description
Nuclear magnetic resonance (NMR) is an important phenomenon involving nuclear magnetic moments in magnetic field, which can provide much information about a wide range of materials, including their chemical composition, chemical environments and nuclear spin interactions. The NMR spectrometer has been extensively developed and used in many areas of research. In this thesis, studies in two different areas using NMR are presented. First, a new kind of nanoparticle, Gd(DTPA) intercalated layered double hydroxide (LDH), has been successfully synthesized in the laboratory of Prof. Dey in SEMTE at ASU. In Chapter II, the NMR relaxation studies of two types of LDH (Mg, Al-LDH and Zn, Al-LDH) are presented and the results show that when they are intercalated with Gd(DTPA) they have a higher relaxivity than current commercial magnetic resonance imaging (MRI) contrast agents, such as DTPA in water solution. So this material may be useful as an MRI contrast agent. Several conditions were examined, such as nanoparticle size, pH and intercalation percentage, to determine the optimal relaxivity of this nanoparticle. Further NMR studies and simulations were conducted to provide an explanation for the high relaxivity. Second, fly ash is a kind of cementitious material, which has been of great interest because, when activated by an alkaline solution, it exhibits the capability for replacing ordinary Portland cement as a concrete binder. However, the reaction of activated fly ash is not fully understood. In chapter III, pore structure and NMR studies of activated fly ash using different activators, including NaOH and KOH (4M and 8M) and Na/K silicate, are presented. The pore structure, degree of order and proportion of different components in the reaction product were obtained, which reveal much about the reaction and makeup of the final product.
ContributorsPeng, Zihui (Author) / Marzke, Robert F (Thesis advisor) / Dey, Sandwip Kumar (Committee member) / Neithalath, Narayanan (Committee member) / Chamberlin, Ralph Vary (Committee member) / Mccartney, Martha Rogers (Committee member) / Arizona State University (Publisher)
Created2013
Description
Zinc oxide (ZnO), a naturally n-type semiconductor has been identified as a promising candidate to replace indium tin oxide (ITO) as the transparent electrode in solar cells, because of its wide bandgap (3.37 eV), abundant source materials and suitable refractive index (2.0 at 600 nm). Spray deposition is a convenient and low cost technique for large area and uniform deposition of semiconductor thin films. In particular, it provides an easier way to dope the film by simply adding the dopant precursor into the starting solution. In order to reduce the resistivity of undoped ZnO, many works have been done by doping in the ZnO with either group IIIA elements or VIIA elements using spray pyrolysis. However, the resistivity is still too high to meet TCO's resistivity requirement. In the present work, a novel co-spray deposition technique is developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e. the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with one cationic dopant, Al, Cr, or Fe, and an anionic dopant, F, have been successfully synthesized, in which F is incompatible with all these three cationic dopants. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, NH 4F. The second solution contained the Zn and one cationic dopant precursors, Zn(O 2CCH 3) 2 and AlCl 3, CrCl 3, or FeCl 3. The deposition was carried out at 500 °C; on soda-lime glass in air. Compared to singly-doped ZnO thin films, codoped ZnO samples showed better electrical properties. Besides, a minimum sheet resistance, 55.4 Ω/sq, was obtained for Al and F codoped ZnO films after vacuum annealing at 400 °C;, which was lower than singly-doped ZnO with either Al or F. The transmittance for the Al and F codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties.
ContributorsZhou, Bin (Author) / Tao, Meng (Thesis advisor) / Goryll, Michael (Committee member) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2013
Description
This study focused on investigating the ability of a polymeric-enhanced high-tenacity fabric composite called CarbonFlex to mitigate damages from multi-natural hazards, which are earthquakes and tornadoes, in wood-framed structures. Typically, wood-framed shear wall is a seismic protection system used in low-rise wood structures. It is well-known that the main energy dissipation of the system is its fasteners (nails) which are not enough to dissipate energy leading to decreasing of structure's integrity. Moreover, wood shear walls could not sustain their stiffness after experiencing moderate wall drift which made them susceptible to strong aftershocks. Therefore, CarbonFlex shear wall system was proposed to be used in the wood-framed structures. Seven full-size CarbonFlex shear walls and a CarbonFlex wrapped structures were tested. The results were compared to those of conventional wood-framed shear walls and a wood structure. The comparisons indicated that CarbonFlex specimens could sustain their strength and fully recover their initial stiffness although they experienced four percent story drift while the stiffness of the conventional structure dramatically degraded. This indicated that CarbonFlex shear wall systems provided a better seismic protection to wood-framed structures. To evaluate capability of CarbonFlex to resist impact damages from wind-borne debris in tornadoes, several debris impact tests of CarbonFlex and a carbon fiber reinforced storm shelter's wall panels were conducted. The results showed that three CarbonFlex wall panels passed the test at the highest debris impact speed and the other two passed the test at the second highest speed while the carbon fiber panel failed both impact speeds.
ContributorsDhiradhamvit, Kittinan (Author) / Attard, Thomas L (Thesis advisor) / Fafitis, Apostolos (Thesis advisor) / Neithalath, Narayanan (Committee member) / Thomas, Benjamin (Committee member) / Arizona State University (Publisher)
Created2013