ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 115
Description
The effect of earthquake-induced liquefaction on the local void ratio distribution of cohesionless soil is evaluated using x-ray computed tomography (CT) and an advanced image processing software package. Intact, relatively undisturbed specimens of cohesionless soil were recovered before and after liquefaction by freezing and coring soil deposits created by pluviation and by sedimentation through water. Pluviated soil deposits were liquefied in the small geotechnical centrifuge at the University of California at Davis shared-use National Science Foundation (NSF)-supported Network for Earthquake Engineering Simulation (NEES) facility. A soil deposit created by sedimentation through water was liquefied on a small shake table in the Arizona State University geotechnical laboratory. Initial centrifuge tests employed Ottawa 20-30 sand but this material proved to be too coarse to liquefy in the centrifuge. Therefore, subsequent centrifuge tests employed Ottawa F60 sand. The shake table test employed Ottawa 20-30 sand. Recovered cores were stabilized by impregnation with optical grade epoxy and sent to the University of Texas at Austin NSF-supported facility at the University of Texas at Austin for high-resolution CT scanning of geologic media. The local void ratio distribution of a CT-scanned core of Ottawa 20-30 sand evaluated using Avizo® Fire, a commercially available advanced program for image analysis, was compared to the local void ratio distribution established on the same core by analysis of optical images to demonstrate that analysis of the CT scans gave similar results to optical methods. CT scans were subsequently conducted on liquefied and not-liquefied specimens of Ottawa 20-30 sand and Ottawa F60 sand. The resolution of F60 specimens was inadequate to establish the local void ratio distribution. Results of the analysis of the Ottawa 20-30 specimens recovered from the model built for the shake table test showed that liquefaction can substantially influence the variability in local void ratio, increasing the degree of non-homogeneity in the specimen.
ContributorsGutierrez, Angel (Author) / Kavazanjian, Edward (Thesis advisor) / Houston, Sandra (Committee member) / Zapata, Claudia (Committee member) / Arizona State University (Publisher)
Created2013
Description
Heating of asphalt during production and construction causes the volatilization and oxidation of binders used in mixes. Volatilization and oxidation causes degradation of asphalt pavements by increasing the stiffness of the binders, increasing susceptibility to cracking and negatively affecting the functional and structural performance of the pavements. Degradation of asphalt binders by volatilization and oxidation due to high production temperature occur during early stages of pavement life and are known as Short Term Aging (STA). Elevated temperatures and increased exposure time to elevated temperatures causes increased STA of asphalt. The objective of this research was to investigate how elevated mixing temperatures and exposure time to elevated temperatures affect aging and stiffening of binders, thus influencing properties of the asphalt mixtures. The study was conducted in two stages. The first stage evaluated STA effect of asphalt binders. It involved aging two Performance Graded (PG) virgin asphalt binders, PG 76-16 and PG 64-22 at two different temperatures and durations, then measuring their viscosities. The second stage involved evaluating the effects of elevated STA temperature and time on properties of the asphalt mixtures. It involved STA of asphalt mixtures produced in the laboratory with the PG 64-22 binder at mixing temperatures elevated 25OF above standard practice; STA times at 2 and 4 hours longer than standard practices, and then compacted in a gyratory compactor. Dynamic modulus (E*) and Indirect Tensile Strength (IDT) were measured for the aged mixtures for each temperature and duration to determine the effect of different aging times and temperatures on the stiffness and fatigue properties of the aged asphalt mixtures. The binder test results showed that in all cases, there was increased viscosity. The results showed the highest increase in viscosity resulted from increased aging time. The results also indicated that PG 64-22 was more susceptible to elevated STA temperature and extended time than the PG 76-16 binders. The asphalt mixture test results confirmed the expected outcome that increasing the STA and mixing temperature by 25oF alters the stiffness of mixtures. Significant change in the dynamic modulus mostly occurred at four hour increase in STA time regardless of temperature.
ContributorsLolly, Rubben (Author) / Kaloush, Kamil (Thesis advisor) / Bearup, Wylie (Committee member) / Zapata, Claudia (Committee member) / Mamlouk, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices. Self-heating issues with GaN HEMT and lack of understanding of various phenomena are hindering their widespread commercial development. There is a need to understand device operation by developing a model which could be used to optimize electrical and thermal characteristics of GaN HEMT design for high power and high frequency operation. In this thesis work a physical simulation model of AlGaN/GaN HEMT is developed using commercially available software ATLAS from SILVACO Int. based on the energy balance/hydrodynamic carrier transport equations. The model is calibrated against experimental data. Transfer and output characteristics are the key focus in the analysis along with saturation drain current. The resultant IV curves showed a close correspondence with experimental results. Various combinations of electron mobility, velocity saturation, momentum and energy relaxation times and gate work functions were attempted to improve IV curve correlation. Thermal effects were also investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of GaN HEMTs. The temperature profiles across the device were observed. Hot spots were found along the channel in the gate-drain spacing. These preliminary results indicate that the thermal effects do have an impact on the electrical device characteristics at large biases even though the amount of self-heating is underestimated with respect to thermal particle-based simulations that solve the energy balance equations for acoustic and optical phonons as well (thus take proper account of the formation of the hot-spot). The decrease in drain current is due to decrease in saturation carrier velocity. The necessity of including hydrodynamic/energy balance transport models for accurate simulations is demonstrated. Possible ways for improving model accuracy are discussed in conjunction with future research.
ContributorsChowdhury, Towhid (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Distributed inference has applications in a wide range of fields such as source localization, target detection, environment monitoring, and healthcare. In this dissertation, distributed inference schemes which use bounded transmit power are considered. The performance of the proposed schemes are studied for a variety of inference problems. In the first part of the dissertation, a distributed detection scheme where the sensors transmit with constant modulus signals over a Gaussian multiple access channel is considered. The deflection coefficient of the proposed scheme is shown to depend on the characteristic function of the sensing noise, and the error exponent for the system is derived using large deviation theory. Optimization of the deflection coefficient and error exponent are considered with respect to a transmission phase parameter for a variety of sensing noise distributions including impulsive ones. The proposed scheme is also favorably compared with existing amplify-and-forward (AF) and detect-and-forward (DF) schemes. The effect of fading is shown to be detrimental to the detection performance and simulations are provided to corroborate the analytical results. The second part of the dissertation studies a distributed inference scheme which uses bounded transmission functions over a Gaussian multiple access channel. The conditions on the transmission functions under which consistent estimation and reliable detection are possible is characterized. For the distributed estimation problem, an estimation scheme that uses bounded transmission functions is proved to be strongly consistent provided that the variance of the noise samples are bounded and that the transmission function is one-to-one. The proposed estimation scheme is compared with the amplify and forward technique and its robustness to impulsive sensing noise distributions is highlighted. It is also shown that bounded transmissions suffer from inconsistent estimates if the sensing noise variance goes to infinity. For the distributed detection problem, similar results are obtained by studying the deflection coefficient. Simulations corroborate our analytical results. In the third part of this dissertation, the problem of estimating the average of samples distributed at the nodes of a sensor network is considered. A distributed average consensus algorithm in which every sensor transmits with bounded peak power is proposed. In the presence of communication noise, it is shown that the nodes reach consensus asymptotically to a finite random variable whose expectation is the desired sample average of the initial observations with a variance that depends on the step size of the algorithm and the variance of the communication noise. The asymptotic performance is characterized by deriving the asymptotic covariance matrix using results from stochastic approximation theory. It is shown that using bounded transmissions results in slower convergence compared to the linear consensus algorithm based on the Laplacian heuristic. Simulations corroborate our analytical findings. Finally, a robust distributed average consensus algorithm in which every sensor performs a nonlinear processing at the receiver is proposed. It is shown that non-linearity at the receiver nodes makes the algorithm robust to a wide range of channel noise distributions including the impulsive ones. It is shown that the nodes reach consensus asymptotically and similar results are obtained as in the case of transmit non-linearity. Simulations corroborate our analytical findings and highlight the robustness of the proposed algorithm.
ContributorsDasarathan, Sivaraman (Author) / Tepedelenlioğlu, Cihan (Thesis advisor) / Papandreou-Suppappola, Antonia (Committee member) / Reisslein, Martin (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation. This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals assists in categorizing defects leading to failure/degradation as: oxygen vacancies, thermally activated defects within the bandgap, channel-dielectric interface defects, and acceptor-like or donor-like trap states. Microwave anneal has been confirmed to enhance the quality of thin films, however future work entails extending the use of electromagnetic radiation in controlled ambient to facilitate quick post fabrication anneal to improve the functionality and lifetime of these low temperature fabricated TFTs.
ContributorsVemuri, Rajitha (Author) / Alford, Terry L. (Thesis advisor) / Theodore, N David (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Unsaturated soil mechanics is becoming a part of geotechnical engineering practice, particularly in applications to moisture sensitive soils such as expansive and collapsible soils and in geoenvironmental applications. The soil water characteristic curve, which describes the amount of water in a soil versus soil suction, is perhaps the most important soil property function for application of unsaturated soil mechanics. The soil water characteristic curve has been used extensively for estimating unsaturated soil properties, and a number of fitting equations for development of soil water characteristic curves from laboratory data have been proposed by researchers. Although not always mentioned, the underlying assumption of soil water characteristic curve fitting equations is that the soil is sufficiently stiff so that there is no change in total volume of the soil while measuring the soil water characteristic curve in the laboratory, and researchers rarely take volume change of soils into account when generating or using the soil water characteristic curve. Further, there has been little attention to the applied net normal stress during laboratory soil water characteristic curve measurement, and often zero to only token net normal stress is applied. The applied net normal stress also affects the volume change of the specimen during soil suction change. When a soil changes volume in response to suction change, failure to consider the volume change of the soil leads to errors in the estimated air-entry value and the slope of the soil water characteristic curve between the air-entry value and the residual moisture state. Inaccuracies in the soil water characteristic curve may lead to inaccuracies in estimated soil property functions such as unsaturated hydraulic conductivity. A number of researchers have recently recognized the importance of considering soil volume change in soil water characteristic curves. The study of correct methods of soil water characteristic curve measurement and determination considering soil volume change, and impacts on the unsaturated hydraulic conductivity function was of the primary focus of this study. Emphasis was placed upon study of the effect of volume change consideration on soil water characteristic curves, for expansive clays and other high volume change soils. The research involved extensive literature review and laboratory soil water characteristic curve testing on expansive soils. The effect of the initial state of the specimen (i.e. slurry versus compacted) on soil water characteristic curves, with regard to volume change effects, and effect of net normal stress on volume change for determination of these curves, was studied for expansive clays. Hysteresis effects were included in laboratory measurements of soil water characteristic curves as both wetting and drying paths were used. Impacts of soil water characteristic curve volume change considerations on fluid flow computations and associated suction-change induced soil deformations were studied through numerical simulations. The study includes both coupled and uncoupled flow and stress-deformation analyses, demonstrating that the impact of volume change consideration on the soil water characteristic curve and the estimated unsaturated hydraulic conductivity function can be quite substantial for high volume change soils.
ContributorsBani Hashem, Elham (Author) / Houston, Sandra L. (Thesis advisor) / Kavazanjian, Edward (Committee member) / Zapata, Claudia (Committee member) / Arizona State University (Publisher)
Created2013
Description
Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τr measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τg eff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity densities due to the domination of surface generation; whereas, the modified version can be used suitably as a metallic impurity density monitoring tool for such cases.
ContributorsElhami Khorasani, Arash (Author) / Alford, Terry (Thesis advisor) / Goryll, Michael (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2013
Description
Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 μm achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable large thermal noise level in these photodetectors. This work focuses on utilizing the different band structure engineering methods to design more efficient devices on InP substrates. One prospective way to improve photodetector performance at the extended wavelengths is to utilize lattice matched GaInAs/GaAsSb structures that have a type-II band alignment, where the ground state transition energy of the superlattice is smaller than the bandgap of either constituent material. Over the extended wavelength range of 2 to 3 μm this superlattice structure has an optimal period thickness of 3.4 to 5.2 nm and a wavefunction overlap of 0.8 to 0.4, respectively. In using a type-II superlattice to extend the cutoff wavelength there is a tradeoff between the wavelength reached and the electron-hole wavefunction overlap realized, and hence absorption coefficient achieved. This tradeoff and the subsequent reduction in performance can be overcome by two methods: adding bismuth to this type-II material system; applying strain on both layers in the system to attain strain-balanced condition. These allow the valance band alignment and hence the wavefunction overlap to be tuned independently of the wavelength cutoff. Adding 3% bismuth to the GaInAs constituent material, the resulting lattice matched Ga0.516In0.484As0.970Bi0.030/GaAs0.511Sb0.489superlattice realizes a 50% larger absorption coefficient. While as, similar results can be achieved with strain-balanced condition with strain limited to 1.9% on either layer. The optimal design rules derived from the different possibilities make it feasible to extract superlattice period thickness with the best absorption coefficient for any cutoff wavelength in the range.
ContributorsSharma, Ankur R (Author) / Johnson, Shane (Thesis advisor) / Goryll, Michael (Committee member) / Roedel, Ronald (Committee member) / Arizona State University (Publisher)
Created2013
Description
This thesis presents a probabilistic evaluation of multiple laterally loaded drilled pier foundation design approaches using extensive data from a geotechnical investigation for a high voltage electric transmission line. A series of Monte Carlo simulations provide insight about the computed level of reliability considering site standard penetration test blow count value variability alone (i.e., assuming all other aspects of the design problem do not contribute error or bias). Evaluated methods include Eurocode 7 Geotechnical Design procedures, the Federal Highway Administration drilled shaft LRFD design method, the Electric Power Research Institute transmission foundation design procedure and a site specific variability based approach previously suggested by the author of this thesis and others. The analysis method is defined by three phases: a) Evaluate the spatial variability of an existing subsurface database. b) Derive theoretical foundation designs from the database in accordance with the various design methods identified. c) Conduct Monti Carlo Simulations to compute the reliability of the theoretical foundation designs. Over several decades, reliability-based foundation design (RBD) methods have been developed and implemented to varying degrees for buildings, bridges, electric systems and other structures. In recent years, an effort has been made by researchers, professional societies and other standard-developing organizations to publish design guidelines, manuals and standards concerning RBD for foundations. Most of these approaches rely on statistical methods for quantifying load and resistance probability distribution functions with defined reliability levels. However, each varies with regard to the influence of site-specific variability on resistance. An examination of the influence of site-specific variability is required to provide direction for incorporating the concept into practical RBD design methods. Recent surveys of transmission line engineers by the Electric Power Research Institute (EPRI) demonstrate RBD methods for the design of transmission line foundations have not been widely adopted. In the absence of a unifying design document with established reliability goals, transmission line foundations have historically performed very well, with relatively few failures. However, such a track record with no set reliability goals suggests, at least in some cases, a financial premium has likely been paid.
ContributorsHeim, Zackary (Author) / Houston, Sandra (Thesis advisor) / Witczak, Matthew (Committee member) / Kavazanjian, Edward (Committee member) / Zapata, Claudia (Committee member) / Arizona State University (Publisher)
Created2014
Description
Zinc oxide (ZnO), a naturally n-type semiconductor has been identified as a promising candidate to replace indium tin oxide (ITO) as the transparent electrode in solar cells, because of its wide bandgap (3.37 eV), abundant source materials and suitable refractive index (2.0 at 600 nm). Spray deposition is a convenient and low cost technique for large area and uniform deposition of semiconductor thin films. In particular, it provides an easier way to dope the film by simply adding the dopant precursor into the starting solution. In order to reduce the resistivity of undoped ZnO, many works have been done by doping in the ZnO with either group IIIA elements or VIIA elements using spray pyrolysis. However, the resistivity is still too high to meet TCO's resistivity requirement. In the present work, a novel co-spray deposition technique is developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e. the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with one cationic dopant, Al, Cr, or Fe, and an anionic dopant, F, have been successfully synthesized, in which F is incompatible with all these three cationic dopants. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, NH 4F. The second solution contained the Zn and one cationic dopant precursors, Zn(O 2CCH 3) 2 and AlCl 3, CrCl 3, or FeCl 3. The deposition was carried out at 500 °C; on soda-lime glass in air. Compared to singly-doped ZnO thin films, codoped ZnO samples showed better electrical properties. Besides, a minimum sheet resistance, 55.4 Ω/sq, was obtained for Al and F codoped ZnO films after vacuum annealing at 400 °C;, which was lower than singly-doped ZnO with either Al or F. The transmittance for the Al and F codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties.
ContributorsZhou, Bin (Author) / Tao, Meng (Thesis advisor) / Goryll, Michael (Committee member) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2013