ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 134
Description
GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices. Self-heating issues with GaN HEMT and lack of understanding of various phenomena are hindering their widespread commercial development. There is a need to understand device operation by developing a model which could be used to optimize electrical and thermal characteristics of GaN HEMT design for high power and high frequency operation. In this thesis work a physical simulation model of AlGaN/GaN HEMT is developed using commercially available software ATLAS from SILVACO Int. based on the energy balance/hydrodynamic carrier transport equations. The model is calibrated against experimental data. Transfer and output characteristics are the key focus in the analysis along with saturation drain current. The resultant IV curves showed a close correspondence with experimental results. Various combinations of electron mobility, velocity saturation, momentum and energy relaxation times and gate work functions were attempted to improve IV curve correlation. Thermal effects were also investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of GaN HEMTs. The temperature profiles across the device were observed. Hot spots were found along the channel in the gate-drain spacing. These preliminary results indicate that the thermal effects do have an impact on the electrical device characteristics at large biases even though the amount of self-heating is underestimated with respect to thermal particle-based simulations that solve the energy balance equations for acoustic and optical phonons as well (thus take proper account of the formation of the hot-spot). The decrease in drain current is due to decrease in saturation carrier velocity. The necessity of including hydrodynamic/energy balance transport models for accurate simulations is demonstrated. Possible ways for improving model accuracy are discussed in conjunction with future research.
ContributorsChowdhury, Towhid (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Distributed inference has applications in a wide range of fields such as source localization, target detection, environment monitoring, and healthcare. In this dissertation, distributed inference schemes which use bounded transmit power are considered. The performance of the proposed schemes are studied for a variety of inference problems. In the first part of the dissertation, a distributed detection scheme where the sensors transmit with constant modulus signals over a Gaussian multiple access channel is considered. The deflection coefficient of the proposed scheme is shown to depend on the characteristic function of the sensing noise, and the error exponent for the system is derived using large deviation theory. Optimization of the deflection coefficient and error exponent are considered with respect to a transmission phase parameter for a variety of sensing noise distributions including impulsive ones. The proposed scheme is also favorably compared with existing amplify-and-forward (AF) and detect-and-forward (DF) schemes. The effect of fading is shown to be detrimental to the detection performance and simulations are provided to corroborate the analytical results. The second part of the dissertation studies a distributed inference scheme which uses bounded transmission functions over a Gaussian multiple access channel. The conditions on the transmission functions under which consistent estimation and reliable detection are possible is characterized. For the distributed estimation problem, an estimation scheme that uses bounded transmission functions is proved to be strongly consistent provided that the variance of the noise samples are bounded and that the transmission function is one-to-one. The proposed estimation scheme is compared with the amplify and forward technique and its robustness to impulsive sensing noise distributions is highlighted. It is also shown that bounded transmissions suffer from inconsistent estimates if the sensing noise variance goes to infinity. For the distributed detection problem, similar results are obtained by studying the deflection coefficient. Simulations corroborate our analytical results. In the third part of this dissertation, the problem of estimating the average of samples distributed at the nodes of a sensor network is considered. A distributed average consensus algorithm in which every sensor transmits with bounded peak power is proposed. In the presence of communication noise, it is shown that the nodes reach consensus asymptotically to a finite random variable whose expectation is the desired sample average of the initial observations with a variance that depends on the step size of the algorithm and the variance of the communication noise. The asymptotic performance is characterized by deriving the asymptotic covariance matrix using results from stochastic approximation theory. It is shown that using bounded transmissions results in slower convergence compared to the linear consensus algorithm based on the Laplacian heuristic. Simulations corroborate our analytical findings. Finally, a robust distributed average consensus algorithm in which every sensor performs a nonlinear processing at the receiver is proposed. It is shown that non-linearity at the receiver nodes makes the algorithm robust to a wide range of channel noise distributions including the impulsive ones. It is shown that the nodes reach consensus asymptotically and similar results are obtained as in the case of transmit non-linearity. Simulations corroborate our analytical findings and highlight the robustness of the proposed algorithm.
ContributorsDasarathan, Sivaraman (Author) / Tepedelenlioğlu, Cihan (Thesis advisor) / Papandreou-Suppappola, Antonia (Committee member) / Reisslein, Martin (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation. This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals assists in categorizing defects leading to failure/degradation as: oxygen vacancies, thermally activated defects within the bandgap, channel-dielectric interface defects, and acceptor-like or donor-like trap states. Microwave anneal has been confirmed to enhance the quality of thin films, however future work entails extending the use of electromagnetic radiation in controlled ambient to facilitate quick post fabrication anneal to improve the functionality and lifetime of these low temperature fabricated TFTs.
ContributorsVemuri, Rajitha (Author) / Alford, Terry L. (Thesis advisor) / Theodore, N David (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Today, the electric power system faces new challenges from rapid developing technology and the growing concern about environmental problems. The future of the power system under these new challenges needs to be planned and studied. However, due to the high degree of computational complexity of the optimization problem, conducting a system planning study which takes into account the market structure and environmental constraints on a large-scale power system is computationally taxing. To improve the execution time of large system simulations, such as the system planning study, two possible strategies are proposed in this thesis. The first one is to implement a relative new factorization method, known as the multifrontal method, to speed up the solution of the sparse linear matrix equations within the large system simulations. The performance of the multifrontal method implemented by UMFAPACK is compared with traditional LU factorization on a wide range of power-system matrices. The results show that the multifrontal method is superior to traditional LU factorization on relatively denser matrices found in other specialty areas, but has poor performance on the more sparse matrices that occur in power-system applications. This result suggests that multifrontal methods may not be an effective way to improve execution time for large system simulation and power system engineers should evaluate the performance of the multifrontal method before applying it to their applications. The second strategy is to develop a small dc equivalent of the large-scale network with satisfactory accuracy for the large-scale system simulations. In this thesis, a modified Ward equivalent is generated for a large-scale power system, such as the full Electric Reliability Council of Texas (ERCOT) system. In this equivalent, all the generators in the full model are retained integrally. The accuracy of the modified Ward equivalent is validated and the equivalent is used to conduct the optimal generation investment planning study. By using the dc equivalent, the execution time for optimal generation investment planning is greatly reduced. Different scenarios are modeled to study the impact of fuel prices, environmental constraints and incentives for renewable energy on future investment and retirement in generation.
ContributorsLi, Nan (Author) / Tylavsky, Daniel J (Thesis advisor) / Vittal, Vijay (Committee member) / Hedman, Kory W (Committee member) / Arizona State University (Publisher)
Created2012
Description
A distributed-parameter model is developed for a pressurized water reactor (PWR) in order to analyze the frequency behavior of the nuclear reactor. The model is built based upon the partial differential equations describing heat transfer and fluid flow in the reactor core. As a comparison, a multi-lump reactor core model with five fuel lumps and ten coolant lumps using Mann's model is employed. The derivations of the different transfer functions in both models are also presented with emphasis on the distributed parameter. In order to contrast the two models, Bode plots of the transfer functions are generated using data from the Palo Verde Nuclear Generating Station. Further, a detailed contradistinction between these two models is presented. From the comparison, the features of both models are presented. The distributed parameter model has the ability to offer an accurate transfer function at any location throughout the reactor core. In contrast, the multi-lump parameter model can only provide the average value in a given region (lump). Also, in the distributed parameter model only the feedback according to the specific location under study is incorporated into the transfer function; whereas the transfer functions derived from the multi-lump model contain the average feedback effects happening all over the reactor core.
ContributorsZhang, Taipeng (Author) / Holbert, Keith E. (Thesis advisor) / Vittal, Vijay (Committee member) / Tylavsky, Daniel (Committee member) / Arizona State University (Publisher)
Created2012
Description
Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τr measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τg eff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity densities due to the domination of surface generation; whereas, the modified version can be used suitably as a metallic impurity density monitoring tool for such cases.
ContributorsElhami Khorasani, Arash (Author) / Alford, Terry (Thesis advisor) / Goryll, Michael (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2013
Description
Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 μm achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable large thermal noise level in these photodetectors. This work focuses on utilizing the different band structure engineering methods to design more efficient devices on InP substrates. One prospective way to improve photodetector performance at the extended wavelengths is to utilize lattice matched GaInAs/GaAsSb structures that have a type-II band alignment, where the ground state transition energy of the superlattice is smaller than the bandgap of either constituent material. Over the extended wavelength range of 2 to 3 μm this superlattice structure has an optimal period thickness of 3.4 to 5.2 nm and a wavefunction overlap of 0.8 to 0.4, respectively. In using a type-II superlattice to extend the cutoff wavelength there is a tradeoff between the wavelength reached and the electron-hole wavefunction overlap realized, and hence absorption coefficient achieved. This tradeoff and the subsequent reduction in performance can be overcome by two methods: adding bismuth to this type-II material system; applying strain on both layers in the system to attain strain-balanced condition. These allow the valance band alignment and hence the wavefunction overlap to be tuned independently of the wavelength cutoff. Adding 3% bismuth to the GaInAs constituent material, the resulting lattice matched Ga0.516In0.484As0.970Bi0.030/GaAs0.511Sb0.489superlattice realizes a 50% larger absorption coefficient. While as, similar results can be achieved with strain-balanced condition with strain limited to 1.9% on either layer. The optimal design rules derived from the different possibilities make it feasible to extract superlattice period thickness with the best absorption coefficient for any cutoff wavelength in the range.
ContributorsSharma, Ankur R (Author) / Johnson, Shane (Thesis advisor) / Goryll, Michael (Committee member) / Roedel, Ronald (Committee member) / Arizona State University (Publisher)
Created2013
Description
Insulation aging monitoring is widely used to evaluate the operating condition of power equipment. One important monitoring method is detecting partial discharges (PD). PD is a localized breakdown of dielectric and its characteristics can give information about the insulation aging. Most existing test methods cannot identify different kinds of defects. Also, the practical application of PD detection in most existing test methods is restricted by weak PD signals and strong electric field disturbance from surroundings. In order to monitor aging situation in detail, types of PDs are important features to take into account. To classify different types of PDs, pulse sequence analysis (PSA) method is advocated to analyze PDs in the rod-plane model. This method can reflect cumulative effects of PDs, which are always ignored when only measuring PD value. It also shows uniform characteristics when different kinds of detecting system are utilized. Moreover, it does not need calibration. Analysis results from PSA show highly consistent distribution patterns for the same type of PDs and significant differences in the distribution patterns among types of PDs. Furthermore, a new method to detect PD signals using fiber bragg grating (FBG) based PD sensor is studied in this research. By using a piezoelectric ceramic transducer (PZT), small PD signals can be converted to pressure signal and then converted to an optical wavelength signal with FBG. The optical signal is isolated from the electric field; therefore its attenuation and anti-jamming performance will be better than traditional methods. Two sensors, one with resonant frequency of 42.7 kHz and the other 300 kHz, were used to explore the performance of this testing system. However, there were issues with the sensitivity of the sensors of these devices and the results have been communicated with the company. These devices could not give the results at the same level of accuracy as the conventional methods.
ContributorsCui, Longfei (Author) / Gorur, Ravi (Thesis advisor) / Vittal, Vijay (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2013
Description
In modern electric power systems, energy management systems (EMSs) are responsi-ble for monitoring and controlling the generation system and transmission networks. State estimation (SE) is a critical `must run successful' component within the EMS software. This is dictated by the high reliability requirements and need to represent the closest real time model for market operations and other critical analysis functions in the EMS. Tradi-tionally, SE is run with data obtained only from supervisory control and data acquisition (SCADA) devices and systems. However, more emphasis on improving the performance of SE drives the inclusion of phasor measurement units (PMUs) into SE input data. PMU measurements are claimed to be more accurate than conventional measurements and PMUs `time stamp' measurements accurately. These widely distributed devices meas-ure the voltage phasors directly. That is, phase information for measured voltages and currents are available. PMUs provide data time stamps to synchronize measurements. Con-sidering the relatively small number of PMUs installed in contemporary power systems in North America, performing SE with only phasor measurements is not feasible. Thus a hy-brid SE, including both SCADA and PMU measurements, is the reality for contemporary power system SE. The hybrid approach is the focus of a number of research papers. There are many practical challenges in incorporating PMUs into SE input data. The higher reporting rates of PMUs as compared with SCADA measurements is one of the salient problems. The disparity of reporting rates raises a question whether buffering the phasor measurements helps to give better estimates of the states. The research presented in this thesis addresses the design of data buffers for PMU data as used in SE applications in electric power systems. The system theoretic analysis is illustrated using an operating electric power system in the southwest part of the USA. Var-ious instances of state estimation data have been used for analysis purposes. The details of the research, results obtained and conclusions drawn are presented in this document.
ContributorsMurugesan, Veerakumar (Author) / Vittal, Vijay (Committee member) / Heydt, Gerald (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2013
Description
Zinc oxide (ZnO), a naturally n-type semiconductor has been identified as a promising candidate to replace indium tin oxide (ITO) as the transparent electrode in solar cells, because of its wide bandgap (3.37 eV), abundant source materials and suitable refractive index (2.0 at 600 nm). Spray deposition is a convenient and low cost technique for large area and uniform deposition of semiconductor thin films. In particular, it provides an easier way to dope the film by simply adding the dopant precursor into the starting solution. In order to reduce the resistivity of undoped ZnO, many works have been done by doping in the ZnO with either group IIIA elements or VIIA elements using spray pyrolysis. However, the resistivity is still too high to meet TCO's resistivity requirement. In the present work, a novel co-spray deposition technique is developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e. the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with one cationic dopant, Al, Cr, or Fe, and an anionic dopant, F, have been successfully synthesized, in which F is incompatible with all these three cationic dopants. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, NH 4F. The second solution contained the Zn and one cationic dopant precursors, Zn(O 2CCH 3) 2 and AlCl 3, CrCl 3, or FeCl 3. The deposition was carried out at 500 °C; on soda-lime glass in air. Compared to singly-doped ZnO thin films, codoped ZnO samples showed better electrical properties. Besides, a minimum sheet resistance, 55.4 Ω/sq, was obtained for Al and F codoped ZnO films after vacuum annealing at 400 °C;, which was lower than singly-doped ZnO with either Al or F. The transmittance for the Al and F codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties.
ContributorsZhou, Bin (Author) / Tao, Meng (Thesis advisor) / Goryll, Michael (Committee member) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2013