ASU Electronic Theses and Dissertations
This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.
In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.
Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.
Displaying 1 - 10 of 100
Description
A proposed visible spectrum nanoscale imaging method requires material with permittivity values much larger than those available in real world materials to shrink the visible wavelength to attain the desired resolution. It has been proposed that the extraordinarily slow propagation experienced by light guided along plasmon resonant structures is a viable approach to obtaining these short wavelengths. To assess the feasibility of such a system, an effective medium model of a chain of Noble metal plasmonic nanospheres is developed, leading to a straightforward calculation of the waveguiding properties. Evaluation of other models for such structures that have appeared in the literature, including an eigenvalue problem nearest neighbor approximation, a multi- neighbor approximation with retardation, and a method-of-moments method for a finite chain, show conflicting expectations of such a structure. In particular, recent publications suggest the possibility of regions of invalidity for eigenvalue problem solutions that are considered far below the onset of guidance, and for solutions that assume the loss is low enough to justify perturbation approximations. Even the published method-of-moments approach suffers from an unjustified assumption in the original interpretation, leading to overly optimistic estimations of the attenuation of the plasmon guided wave. In this work it is shown that the method of moments approach solution was dominated by the radiation from the source dipole, and not the waveguiding behavior claimed. If this dipolar radiation is removed the remaining fields ought to contain the desired guided wave information. Using a Prony's-method-based algorithm the dispersion properties of the chain of spheres are assessed at two frequencies, and shown to be dramatically different from the optimistic expectations in much of the literature. A reliable alternative to these models is to replace the chain of spheres with an effective medium model, thus mapping the chain problem into the well-known problem of the dielectric rod. The solution of the Green function problem for excitation of the symmetric longitudinal mode (TM01) is performed by numerical integration. Using this method the frequency ranges over which the rod guides and the associated attenuation are clearly seen. The effective medium model readily allows for variation of the sphere size and separation, and can be taken to the limit where instead of a chain of spheres we have a solid Noble metal rod. This latter case turns out to be the optimal for minimizing the attenuation of the guided wave. Future work is proposed to simulate the chain of photonic nanospheres and the nanowire using finite-difference time-domain to verify observed guided behavior in the Green's function method devised in this thesis and to simulate the proposed nanosensing devices.
ContributorsHale, Paul (Author) / Diaz, Rodolfo E (Thesis advisor) / Goodnick, Stephen (Committee member) / Aberle, James T., 1961- (Committee member) / Palais, Joseph (Committee member) / Arizona State University (Publisher)
Created2013
Description
The increasing popularity of Twitter renders improved trustworthiness and relevance assessment of tweets much more important for search. However, given the limitations on the size of tweets, it is hard to extract measures for ranking from the tweet's content alone. I propose a method of ranking tweets by generating a reputation score for each tweet that is based not just on content, but also additional information from the Twitter ecosystem that consists of users, tweets, and the web pages that tweets link to. This information is obtained by modeling the Twitter ecosystem as a three-layer graph. The reputation score is used to power two novel methods of ranking tweets by propagating the reputation over an agreement graph based on tweets' content similarity. Additionally, I show how the agreement graph helps counter tweet spam. An evaluation of my method on 16~million tweets from the TREC 2011 Microblog Dataset shows that it doubles the precision over baseline Twitter Search and achieves higher precision than current state of the art method. I present a detailed internal empirical evaluation of RAProp in comparison to several alternative approaches proposed by me, as well as external evaluation in comparison to the current state of the art method.
ContributorsRavikumar, Srijith (Author) / Kambhampati, Subbarao (Thesis advisor) / Davulcu, Hasan (Committee member) / Liu, Huan (Committee member) / Arizona State University (Publisher)
Created2013
Description
Automating aspects of biocuration through biomedical information extraction could significantly impact biomedical research by enabling greater biocuration throughput and improving the feasibility of a wider scope. An important step in biomedical information extraction systems is named entity recognition (NER), where mentions of entities such as proteins and diseases are located within natural-language text and their semantic type is determined. This step is critical for later tasks in an information extraction pipeline, including normalization and relationship extraction. BANNER is a benchmark biomedical NER system using linear-chain conditional random fields and the rich feature set approach. A case study with BANNER locating genes and proteins in biomedical literature is described. The first corpus for disease NER adequate for use as training data is introduced, and employed in a case study of disease NER. The first corpus locating adverse drug reactions (ADRs) in user posts to a health-related social website is also described, and a system to locate and identify ADRs in social media text is created and evaluated. The rich feature set approach to creating NER feature sets is argued to be subject to diminishing returns, implying that additional improvements may require more sophisticated methods for creating the feature set. This motivates the first application of multivariate feature selection with filters and false discovery rate analysis to biomedical NER, resulting in a feature set at least 3 orders of magnitude smaller than the set created by the rich feature set approach. Finally, two novel approaches to NER by modeling the semantics of token sequences are introduced. The first method focuses on the sequence content by using language models to determine whether a sequence resembles entries in a lexicon of entity names or text from an unlabeled corpus more closely. The second method models the distributional semantics of token sequences, determining the similarity between a potential mention and the token sequences from the training data by analyzing the contexts where each sequence appears in a large unlabeled corpus. The second method is shown to improve the performance of BANNER on multiple data sets.
ContributorsLeaman, James Robert (Author) / Gonzalez, Graciela (Thesis advisor) / Baral, Chitta (Thesis advisor) / Cohen, Kevin B (Committee member) / Liu, Huan (Committee member) / Ye, Jieping (Committee member) / Arizona State University (Publisher)
Created2013
Description
GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices. Self-heating issues with GaN HEMT and lack of understanding of various phenomena are hindering their widespread commercial development. There is a need to understand device operation by developing a model which could be used to optimize electrical and thermal characteristics of GaN HEMT design for high power and high frequency operation. In this thesis work a physical simulation model of AlGaN/GaN HEMT is developed using commercially available software ATLAS from SILVACO Int. based on the energy balance/hydrodynamic carrier transport equations. The model is calibrated against experimental data. Transfer and output characteristics are the key focus in the analysis along with saturation drain current. The resultant IV curves showed a close correspondence with experimental results. Various combinations of electron mobility, velocity saturation, momentum and energy relaxation times and gate work functions were attempted to improve IV curve correlation. Thermal effects were also investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of GaN HEMTs. The temperature profiles across the device were observed. Hot spots were found along the channel in the gate-drain spacing. These preliminary results indicate that the thermal effects do have an impact on the electrical device characteristics at large biases even though the amount of self-heating is underestimated with respect to thermal particle-based simulations that solve the energy balance equations for acoustic and optical phonons as well (thus take proper account of the formation of the hot-spot). The decrease in drain current is due to decrease in saturation carrier velocity. The necessity of including hydrodynamic/energy balance transport models for accurate simulations is demonstrated. Possible ways for improving model accuracy are discussed in conjunction with future research.
ContributorsChowdhury, Towhid (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
High electron mobility transistors (HEMTs) based on Group III-nitride heterostructures have been characterized by advanced electron microscopy methods including off-axis electron holography, nanoscale chemical analysis, and electrical measurements, as well as other techniques. The dissertation was organized primarily into three topical areas: (1) characterization of near-gate defects in electrically stressed AlGaN/GaN HEMTs, (2) microstructural and chemical analysis of the gate/buffer interface of AlN/GaN HEMTs, and (3) studies of the impact of laser-liftoff processing on AlGaN/GaN HEMTs. The electrical performance of stressed AlGaN/GaN HEMTs was measured and the devices binned accordingly. Source- and drain-side degraded, undegraded, and unstressed devices were then prepared via focused-ion-beam milling for examination. Defects in the near-gate region were identified and their correlation to electrical measurements analyzed. Increased gate leakage after electrical stressing is typically attributed to "V"-shaped defects at the gate edge. However, strong evidence was found for gate metal diffusion into the barrier layer as another contributing factor. AlN/GaN HEMTs grown on sapphire substrates were found to have high electrical performance which is attributed to the AlN barrier layer, and robust ohmic and gate contact processes. TEM analysis identified oxidation at the gate metal/AlN buffer layer interface. This thin a-oxide gate insulator was further characterized by energy-dispersive x-ray spectroscopy and energy-filtered TEM. Attributed to this previously unidentified layer, high reverse gate bias up to −30 V was demonstrated and drain-induced gate leakage was suppressed to values of less than 10−6 A/mm. In addition, extrinsic gm and ft * LG were improved to the highest reported values for AlN/GaN HEMTs fabricated on sapphire substrates. Laser-liftoff (LLO) processing was used to separate the active layers from sapphire substrates for several GaN-based HEMT devices, including AlGaN/GaN and InAlN/GaN heterostructures. Warpage of the LLO samples resulted from relaxation of the as-grown strain and strain arising from dielectric and metal depositions, and this strain was quantified by both Newton's rings and Raman spectroscopy methods. TEM analysis demonstrated that the LLO processing produced no detrimental effects on the quality of the epitaxial layers. TEM micrographs showed no evidence of either damage to the ~2 μm GaN epilayer generated threading defects.
ContributorsJohnson, Michael R. (Author) / Mccartney, Martha R (Thesis advisor) / Smith, David J. (Committee member) / Goodnick, Stephen (Committee member) / Shumway, John (Committee member) / Chen, Tingyong (Committee member) / Arizona State University (Publisher)
Created2012
Description
Data mining is increasing in importance in solving a variety of industry problems. Our initiative involves the estimation of resource requirements by skill set for future projects by mining and analyzing actual resource consumption data from past projects in the semiconductor industry. To achieve this goal we face difficulties like data with relevant consumption information but stored in different format and insufficient data about project attributes to interpret consumption data. Our first goal is to clean the historical data and organize it into meaningful structures for analysis. Once the preprocessing on data is completed, different data mining techniques like clustering is applied to find projects which involve resources of similar skillsets and which involve similar complexities and size. This results in "resource utilization templates" for groups of related projects from a resource consumption perspective. Then project characteristics are identified which generate this diversity in headcounts and skillsets. These characteristics are not currently contained in the data base and are elicited from the managers of historical projects. This represents an opportunity to improve the usefulness of the data collection system for the future. The ultimate goal is to match the product technical features with the resource requirement for projects in the past as a model to forecast resource requirements by skill set for future projects. The forecasting model is developed using linear regression with cross validation of the training data as the past project execution are relatively few in number. Acceptable levels of forecast accuracy are achieved relative to human experts' results and the tool is applied to forecast some future projects' resource demand.
ContributorsBhattacharya, Indrani (Author) / Sen, Arunabha (Thesis advisor) / Kempf, Karl G. (Thesis advisor) / Liu, Huan (Committee member) / Arizona State University (Publisher)
Created2013
Description
Contemporary online social platforms present individuals with social signals in the form of news feed on their peers' activities. On networks such as Facebook, Quora, network operator decides how that information is shown to an individual. Then the user, with her own interests and resource constraints selectively acts on a subset of items presented to her. The network operator again, shows that activity to a selection of peers, and thus creating a behavioral loop. That mechanism of interaction and information flow raises some very interesting questions such as: can network operator design social signals to promote a particular activity like sustainability, public health care awareness, or to promote a specific product? The focus of my thesis is to answer that question. In this thesis, I develop a framework to personalize social signals for users to guide their activities on an online platform. As the result, we gradually nudge the activity distribution on the platform from the initial distribution p to the target distribution q. My work is particularly applicable to guiding collaborations, guiding collective actions, and online advertising. In particular, I first propose a probabilistic model on how users behave and how information flows on the platform. The main part of this thesis after that discusses the Influence Individuals through Social Signals (IISS) framework. IISS consists of four main components: (1) Learner: it learns users' interests and characteristics from their historical activities using Bayesian model, (2) Calculator: it uses gradient descent method to compute the intermediate activity distributions, (3) Selector: it selects users who can be influenced to adopt or drop specific activities, (4) Designer: it personalizes social signals for each user. I evaluate the performance of IISS framework by simulation on several network topologies such as preferential attachment, small world, and random. I show that the framework gradually nudges users' activities to approach the target distribution. I use both simulation and mathematical method to analyse convergence properties such as how fast and how close we can approach the target distribution. When the number of activities is 3, I show that for about 45% of target distributions, we can achieve KL-divergence as low as 0.05. But for some other distributions KL-divergence can be as large as 0.5.
ContributorsLe, Tien D (Author) / Sundaram, Hari (Thesis advisor) / Davulcu, Hasan (Thesis advisor) / Liu, Huan (Committee member) / Arizona State University (Publisher)
Created2014
Description
The goal of this research work is to develop a particle-based device simulator for modeling strained silicon devices. Two separate modules had to be developed for that purpose: A generic bulk Monte Carlo simulation code which in the long-time limit solves the Boltzmann transport equation for electrons; and an extension to this code that solves for the bulk properties of strained silicon. One scattering table is needed for conventional silicon, whereas, because of the strain breaking the symmetry of the system, three scattering tables are needed for modeling strained silicon material. Simulation results for the average drift velocity and the average electron energy are in close agreement with published data. A Monte Carlo device simulation tool has also been employed to integrate the effects of self-heating into device simulation for Silicon on Insulator devices. The effects of different types of materials for buried oxide layers have been studied. Sapphire, Aluminum Nitride (AlN), Silicon dioxide (SiO2) and Diamond have been used as target materials of interest in the analysis and the effects of varying insulator layer thickness have also been investigated. It was observed that although AlN exhibits the best isothermal behavior, diamond is the best choice when thermal effects are accounted for.
ContributorsQazi, Suleman (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Tao, Meng (Committee member) / Arizona State University (Publisher)
Created2013
Description
GaAs-based solar cells have attracted much interest because of their high conversion efficiencies of ~28% under one sun illumination. The main carrier recombination mechanisms in the GaAs-based solar cells are surface recombination, radiative recombination and non-radiative recombination. Photon recycling reduces the effect of radiative recombination and is an approach to obtain the device performance described by detailed balance theory. The photon recycling model has been developed and was applied to investigate the loss mechanisms in the state-of-the-art GaAs-based solar cell structures using PC1D software. A standard fabrication process of the GaAs-based solar cells is as follows: wafer preparation, individual cell isolation by mesa, n- and p-type metallization, rapid thermal annealing (RTA), cap layer etching, and anti-reflection coating (ARC). The growth rate for GaAs-based materials is one of critical factors to determine the cost for the growth of GaAs-based solar cells. The cost for fabricating GaAs-based solar cells can be reduced if the growth rate is increased without degrading the crystalline quality. The solar cell wafers grown at different growth rates of 14 μm/hour and 55 μm/hour were discussed in this work. The structural properties of the wafers were characterized by X-ray diffraction (XRD) to identify the crystalline quality, and then the as-grown wafers were fabricated into solar cell devices under the same process conditions. The optical and electrical properties such as surface reflection, external quantum efficiency (EQE), dark I-V, Suns-Voc, and illuminated I-V under one sun using a solar simulator were measured to compare the performances of the solar cells with different growth rates. Some simulations in PC1D have been demonstrated to investigate the reasons of the different device performances between fast growth and slow growth structures. A further analysis of the minority carrier lifetime is needed to investigate into the difference in device performances.
ContributorsZhang, Chaomin (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / Faleev, Nikolai (Committee member) / Arizona State University (Publisher)
Created2014
Description
Increasing the conversion efficiencies of photovoltaic (PV) cells beyond the single junction theoretical limit is the driving force behind much of third generation solar cell research. Over the last half century, the experimental conversion efficiency of both single junction and tandem solar cells has plateaued as manufacturers and researchers have optimized various materials and structures. While existing materials and technologies have remarkably good conversion efficiencies, they are approaching their own limits. For example, tandem solar cells are currently well developed commercially but further improvements through increasing the number of junctions struggle with various issues related to material interfacial defects. Thus, there is a need for novel theoretical and experimental approaches leading to new third generation cell structures. Multiple exciton generation (MEG) and intermediate band (IB) solar cells have been proposed as third generation alternatives and theoretical modeling suggests they can surpass the detailed balance efficiency limits of single junction and tandem solar cells. MEG or IB solar cell has a variety of advantages enabling the use of low bandgap materials. Integrating MEG and IB with other cell types to make novel solar cells (such as MEG with tandem, IB with tandem or MEG with IB) potentially offers improvements by employing multi-physics effects in one device. This hybrid solar cell should improve the properties of conventional solar cells with a reduced number of junction, increased light-generated current and extended material selections. These multi-physics effects in hybrid solar cells can be achieved through the use of nanostructures taking advantage of the carrier confinement while using existing solar cell materials with excellent characteristics. This reduces the additional cost to develop novel materials and structures. In this dissertation, the author develops thermodynamic models for several novel types of solar cells and uses these models to optimize and compare their properties to those of existing PV cells. The results demonstrate multiple advantages from combining MEG and IB technology with existing solar cell structures.
ContributorsLee, Jongwon (Author) / Honsberg, C. (Christiana B.) (Thesis advisor) / Bowden, Stuart (Committee member) / Roedel, Ronald (Committee member) / Goodnick, Stephen (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2014