This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.

Displaying 1 - 10 of 116
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Description
Fluxgate sensors are magnetic field sensors that can measure DC and low frequency AC magnetic fields. They can measure much lower magnetic fields than other magnetic sensors like Hall effect sensors, magnetoresistive sensors etc. They also have high linearity, high sensitivity and low noise. The major application of fluxgate sensors

Fluxgate sensors are magnetic field sensors that can measure DC and low frequency AC magnetic fields. They can measure much lower magnetic fields than other magnetic sensors like Hall effect sensors, magnetoresistive sensors etc. They also have high linearity, high sensitivity and low noise. The major application of fluxgate sensors is in magnetometers for the measurement of earth's magnetic field. Magnetometers are used in navigation systems and electronic compasses. Fluxgate sensors can also be used to measure high DC currents. Integrated micro-fluxgate sensors have been developed in recent years. These sensors have much lower power consumption and area compared to their PCB counterparts. The output voltage of micro-fluxgate sensors is very low which makes the analog front end more complex and results in an increase in power consumption of the system. In this thesis a new analog front-end circuit for micro-fluxgate sensors is developed. This analog front-end circuit uses charge pump based excitation circuit and phase delay based read-out chain. With these two features the power consumption of analog front-end is reduced. The output is digital and it is immune to amplitude noise at the output of the sensor. Digital output is produced without using an ADC. A SPICE model of micro-fluxgate sensor is used to verify the operation of the analog front-end and the simulation results show very good linearity.
ContributorsPappu, Karthik (Author) / Bakkaloglu, Bertan (Thesis advisor) / Christen, Jennifer Blain (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2013
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Description
Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1 x 1020 cm-3,

Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1 x 1020 cm-3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonics applications. Er compounds could potentially solve this problem since they contain much higher Er density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor quality of crystals produced by various methods of thin film growth and deposition. This dissertation explores a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl ) in the nanowire form, which facilitates the growth of high quality single crystals. Growth methods for such single crystal ECS nanowires have been established. Various structural and optical characterizations have been carried out. The high crystal quality of ECS material leads to a long lifetime of the first excited state of Er3+ ions up to 1 ms at Er density higher than 1022 cm-3. This Er lifetime-density product was found to be the largest among all Er containing materials. A unique integrating sphere method was developed to measure the absorption cross section of ECS nanowires from 440 to 1580 nm. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement from a single ECS wire. It was estimated that such large signal enhancement can overcome the absorption to result in a net material gain, but not sufficient to compensate waveguide propagation loss. In order to suppress the upconversion process in ECS, Ytterbium (Yb) and Yttrium (Y) ions are introduced as substituent ions of Er in the ECS crystal structure to reduce Er density. While the addition of Yb ions only partially succeeded, erbium yttrium chloride silicate (EYCS) with controllable Er density was synthesized successfully. EYCS with 30 at. % Er was found to be the best. It shows the strongest PL emission at 1.5 μm, and thus can be potentially used as a high gain material.
ContributorsYin, Leijun (Author) / Ning, Cun-Zheng (Thesis advisor) / Chamberlin, Ralph (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2013
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Description
Answer Set Programming (ASP) is one of the most prominent and successful knowledge representation paradigms. The success of ASP is due to its expressive non-monotonic modeling language and its efficient computational methods originating from building propositional satisfiability solvers. The wide adoption of ASP has motivated several extensions to its modeling

Answer Set Programming (ASP) is one of the most prominent and successful knowledge representation paradigms. The success of ASP is due to its expressive non-monotonic modeling language and its efficient computational methods originating from building propositional satisfiability solvers. The wide adoption of ASP has motivated several extensions to its modeling language in order to enhance expressivity, such as incorporating aggregates and interfaces with ontologies. Also, in order to overcome the grounding bottleneck of computation in ASP, there are increasing interests in integrating ASP with other computing paradigms, such as Constraint Programming (CP) and Satisfiability Modulo Theories (SMT). Due to the non-monotonic nature of the ASP semantics, such enhancements turned out to be non-trivial and the existing extensions are not fully satisfactory. We observe that one main reason for the difficulties rooted in the propositional semantics of ASP, which is limited in handling first-order constructs (such as aggregates and ontologies) and functions (such as constraint variables in CP and SMT) in natural ways. This dissertation presents a unifying view on these extensions by viewing them as instances of formulas with generalized quantifiers and intensional functions. We extend the first-order stable model semantics by by Ferraris, Lee, and Lifschitz to allow generalized quantifiers, which cover aggregate, DL-atoms, constraints and SMT theory atoms as special cases. Using this unifying framework, we study and relate different extensions of ASP. We also present a tight integration of ASP with SMT, based on which we enhance action language C+ to handle reasoning about continuous changes. Our framework yields a systematic approach to study and extend non-monotonic languages.
ContributorsMeng, Yunsong (Author) / Lee, Joohyung (Thesis advisor) / Ahn, Gail-Joon (Committee member) / Baral, Chitta (Committee member) / Fainekos, Georgios (Committee member) / Lifschitz, Vladimir (Committee member) / Arizona State University (Publisher)
Created2013
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Description
This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some

This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and elemental segregation. In a separate study, compositional instability is observed in lattice-matched InAlN films grown on GaN, for growth beyond a certain thickness. Beyond 200 nm of thickness, two sub-layers with different indium content are observed, the top one with lower indium content.
ContributorsHuang, Jingyi (Author) / Ponce, Fernando A. (Thesis advisor) / Carpenter, Ray W (Committee member) / Smith, David J. (Committee member) / Yu, Hongbin (Committee member) / Treacy, Michael Mj (Committee member) / Arizona State University (Publisher)
Created2013
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Description
One dimensional (1D) and quasi-one dimensional quantum wires have been a subject of both theoretical and experimental interest since 1990s and before. Phenomena such as the "0.7 structure" in the conductance leave many open questions. In this dissertation, I study the properties and the internal electron states of semiconductor quantum

One dimensional (1D) and quasi-one dimensional quantum wires have been a subject of both theoretical and experimental interest since 1990s and before. Phenomena such as the "0.7 structure" in the conductance leave many open questions. In this dissertation, I study the properties and the internal electron states of semiconductor quantum wires with the path integral Monte Carlo (PIMC) method. PIMC is a tool for simulating many-body quantum systems at finite temperature. Its ability to calculate thermodynamic properties and various correlation functions makes it an ideal tool in bridging experiments with theories. A general study of the features interpreted by the Luttinger liquid theory and observed in experiments is first presented, showing the need for new PIMC calculations in this field. I calculate the DC conductance at finite temperature for both noninteracting and interacting electrons. The quantized conductance is identified in PIMC simulations without making the same approximation in the Luttinger model. The low electron density regime is subject to strong interactions, since the kinetic energy decreases faster than the Coulomb interaction at low density. An electron state called the Wigner crystal has been proposed in this regime for quasi-1D wires. By using PIMC, I observe the zig-zag structure of the Wigner crystal. The quantum fluctuations suppress the long range correla- tions, making the order short-ranged. Spin correlations are calculated and used to evaluate the spin coupling strength in a zig-zag state. I also find that as the density increases, electrons undergo a structural phase transition to a dimer state, in which two electrons of opposite spins are coupled across the two rows of the zig-zag. A phase diagram is sketched for a range of densities and transverse confinements. The quantum point contact (QPC) is a typical realization of quantum wires. I study the QPC by explicitly simulating a system of electrons in and around a Timp potential (Timp, 1992). Localization of a single electron in the middle of the channel is observed at 5 K, as the split gate voltage increases. The DC conductance is calculated, which shows the effect of the Coulomb interaction. At 1 K and low electron density, a state similar to the Wigner crystal is found inside the channel.
ContributorsLiu, Jianheng, 1982- (Author) / Shumway, John B (Thesis advisor) / Schmidt, Kevin E (Committee member) / Chen, Tingyong (Committee member) / Yu, Hongbin (Committee member) / Ros, Robert (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Nitride semiconductors have wide applications in electronics and optoelectronics technologies. Understanding the nature of the optical recombination process and its effects on luminescence efficiency is important for the development of novel devices. This dissertation deals with the optical properties of nitride semiconductors, including GaN epitaxial layers and more complex heterostructures.

Nitride semiconductors have wide applications in electronics and optoelectronics technologies. Understanding the nature of the optical recombination process and its effects on luminescence efficiency is important for the development of novel devices. This dissertation deals with the optical properties of nitride semiconductors, including GaN epitaxial layers and more complex heterostructures. The emission characteristics are examined by cathodoluminescence spectroscopy and imaging, and are correlated with the structural and electrical properties studied by transmission electron microscopy and electron holography. Four major areas are covered in this dissertation, which are described next. The effect of strain on the emission characteristics in wurtzite GaN has been studied. The values of the residual strain in GaN epilayers with different dislocation densities are determined by x-ray diffraction, and the relationship between exciton emission energy and the in-plane residual strain is demonstrated. It shows that the emission energy increases withthe magnitude of the in-plane compressive strain. The temperature dependence of the emission characteristics in cubic GaN has been studied. It is observed that the exciton emission and donor-acceptor pair recombination behave differently with temperature. The donor-bound exciton binding energy has been measured to be 13 meV from the temperature dependence of the emission spectrum. It is also found that the ionization energies for both acceptors and donors are smaller in cubic compared with hexagonal structures, which should contribute to higher doping efficiencies. A comprehensive study on the structural and optical properties is presented for InGaN/GaN quantum wells emitting in the blue, green, and yellow regions of the electromagnetic spectrum. Transmission electron microscopy images indicate the presence of indium inhomogeneties which should be responsible for carrier localization. The temperature dependence of emission luminescence shows that the carrier localization effects become more significant with increasing emission wavelength. On the other hand, the effect of non-radiative recombination on luminescence efficiency also varies with the emission wavelength. The fast increase of the non-radiative recombination rate with temperature in the green emitting QWs contributes to the lower efficiency compared with the blue emitting QWs. The possible saturation of non-radiative recombination above 100 K may explain the unexpected high emission efficiency for the yellow emitting QWs Finally, the effects of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells emitting in visible spectral regions have been studied. A significant improvement of the emission efficiency is observed, which is associated with a blue shift in the emission energy, a reduced recombination lifetime, an increased spatial homogeneity in the luminescence, and a weaker internal field across the quantum wells. These are explained by a partial strain relaxation introduced by the InGaN underlayer, which is measured by reciprocal space mapping of the x-ray diffraction intensity.
ContributorsLi, Di (Author) / Ponce, Fernando (Thesis advisor) / Culbertson, Robert (Committee member) / Yu, Hongbin (Committee member) / Shumway, John (Committee member) / Menéndez, Jose (Committee member) / Arizona State University (Publisher)
Created2012
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Description
A semiconductor supply chain modeling and simulation platform using Linear Program (LP) optimization and parallel Discrete Event System Specification (DEVS) process models has been developed in a joint effort by ASU and Intel Corporation. A Knowledge Interchange Broker (KIBDEVS/LP) was developed to broker information synchronously between the DEVS and LP

A semiconductor supply chain modeling and simulation platform using Linear Program (LP) optimization and parallel Discrete Event System Specification (DEVS) process models has been developed in a joint effort by ASU and Intel Corporation. A Knowledge Interchange Broker (KIBDEVS/LP) was developed to broker information synchronously between the DEVS and LP models. Recently a single-echelon heuristic Inventory Strategy Module (ISM) was added to correct for forecast bias in customer demand data using different smoothing techniques. The optimization model could then use information provided by the forecast model to make better decisions for the process model. The composition of ISM with LP and DEVS models resulted in the first realization of what is now called the Optimization Simulation Forecast (OSF) platform. It could handle a single echelon supply chain system consisting of single hubs and single products In this thesis, this single-echelon simulation platform is extended to handle multiple echelons with multiple inventory elements handling multiple products. The main aspect for the multi-echelon OSF platform was to extend the KIBDEVS/LP such that ISM interactions with the LP and DEVS models could also be supported. To achieve this, a new, scalable XML schema for the KIB has been developed. The XML schema has also resulted in strengthening the KIB execution engine design. A sequential scheme controls the executions of the DEVS-Suite simulator, CPLEX optimizer, and ISM engine. To use the ISM for multiple echelons, it is extended to compute forecast customer demands and safety stocks over multiple hubs and products. Basic examples for semiconductor manufacturing spanning single and two echelon supply chain systems have been developed and analyzed. Experiments using perfect data were conducted to show the correctness of the OSF platform design and implementation. Simple, but realistic experiments have also been conducted. They highlight the kinds of supply chain dynamics that can be evaluated using discrete event process simulation, linear programming optimization, and heuristics forecasting models.
ContributorsSmith, James Melkon (Author) / Sarjoughian, Hessam S. (Thesis advisor) / Davulcu, Hasan (Committee member) / Fainekos, Georgios (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Debugging is a boring, tedious, time consuming but inevitable step of software development and debugging multiple threaded applications with user interactions is even more complicated. Since concurrency and synchronism are normal features in Android mobile applications, the order of thread execution may vary in every run even with the same

Debugging is a boring, tedious, time consuming but inevitable step of software development and debugging multiple threaded applications with user interactions is even more complicated. Since concurrency and synchronism are normal features in Android mobile applications, the order of thread execution may vary in every run even with the same input. To make things worse, the target erroneous cases may happen just in a few specific runs. Besides, the randomness of user interactions makes the whole debugging procedure more unpredictable. Thus, debugging a multiple threaded application is a tough and challenging task. This thesis introduces a replay mechanism for debugging user interactive multiple threaded Android applications. The approach is based on the 'Lamport Clock' concept, 'Event Driven' implementation and 'Client-Server' architecture. The debugger tool described in this thesis provides a user controlled debugging environment where users or developers are allowed to use modified record application to generate a log file. During the record time, all the necessary events like thread creation, synchronization and user input are recorded. Therefore, based on the information contained in the generated log files, the debugger tool can replay the application off-line since log files provide the deterministic order of execution. In this case, user or developers can replay an application as many times as they need to pinpoint the errors in the applications.
ContributorsLu, He (Author) / Lee, Yann-Hang (Thesis advisor) / Fainekos, Georgios (Committee member) / Chen, Yinong (Committee member) / Arizona State University (Publisher)
Created2012
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Description
With robots being used extensively in various areas, a certain degree of robot autonomy has always been found desirable. In applications like planetary exploration, autonomous path planning and navigation are considered essential. But every now and then, a need to modify the robot's operation arises, a need for a human

With robots being used extensively in various areas, a certain degree of robot autonomy has always been found desirable. In applications like planetary exploration, autonomous path planning and navigation are considered essential. But every now and then, a need to modify the robot's operation arises, a need for a human to provide it some supervisory parameters that modify the degree of autonomy or allocate extra tasks to the robot. In this regard, this thesis presents an approach to include a provision to accept and incorporate such human inputs and modify the navigation functions of the robot accordingly. Concepts such as applying kinematical constraints while planning paths, traversing of unknown areas with an intent of maximizing field of view, performing complex tasks on command etc. have been examined and implemented. The approaches have been tested in Robot Operating System (ROS), using robots such as the iRobot Create, Personal Robotics (PR2) etc. Simulations and experimental demonstrations have proved that this approach is feasible for solving some of the existing problems and that it certainly can pave way to further research for enhancing functionality.
ContributorsVemprala, Sai Hemachandra (Author) / Saripalli, Srikanth (Thesis advisor) / Fainekos, Georgios (Committee member) / Turaga, Pavan (Committee member) / Arizona State University (Publisher)
Created2013
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Description
This thesis summarizes modeling and simulation of plasmonic waveguides and nanolasers. The research includes modeling of dielectric constants of doped semiconductor as a potential plasmonic material, simulation of plasmonic waveguides with different configurations and geometries, simulation and design of plasmonic nanolasers. In the doped semiconductor part, a more accurate model

This thesis summarizes modeling and simulation of plasmonic waveguides and nanolasers. The research includes modeling of dielectric constants of doped semiconductor as a potential plasmonic material, simulation of plasmonic waveguides with different configurations and geometries, simulation and design of plasmonic nanolasers. In the doped semiconductor part, a more accurate model accounting for dielectric constant of doped InAs was proposed. In the model, Interband transitions accounted for by Adachi's model considering Burstein-Moss effect and free electron effect governed by Drude model dominate in different spectral regions. For plasmonic waveguide part, Insulator-Metal-Insulator (IMI) waveguide, silver nanowire waveguide with and without substrate, Metal-Semiconductor-Metal (MSM) waveguide and Metal-Insulator-Semiconductor-Insulator-Metal (MISIM) waveguide were investigated respectively. Modal analysis was given for each part. Lastly, a comparative study of plasmonic and optical modes in an MSM disk cavity was performed by FDTD simulation for room temperature at the telecommunication wavelength. The results show quantitatively that plasmonic modes have advantages over optical modes in the scalability down to small size and the cavity Quantum Electrodynamics(QED) effects due to the possibility of breaking the diffraction limit. Surprisingly for lasing characteristics, though plasmonic modes have large loss as expected, minimal achievable threshold can be attained for whispering gallery plasmonic modes with azimuthal number of 2 by optimizing cavity design at 1.55µm due to interplay of metal loss and radiation loss.
ContributorsWang, Haotong (Author) / Ning, Cunzheng (Thesis advisor) / Palais, Joseph (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2014