This collection includes most of the ASU Theses and Dissertations from 2011 to present. ASU Theses and Dissertations are available in downloadable PDF format; however, a small percentage of items are under embargo. Information about the dissertations/theses includes degree information, committee members, an abstract, supporting data or media.

In addition to the electronic theses found in the ASU Digital Repository, ASU Theses and Dissertations can be found in the ASU Library Catalog.

Dissertations and Theses granted by Arizona State University are archived and made available through a joint effort of the ASU Graduate College and the ASU Libraries. For more information or questions about this collection contact or visit the Digital Repository ETD Library Guide or contact the ASU Graduate College at gradformat@asu.edu.

Displaying 1 - 10 of 61
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Description
Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1 x 1020 cm-3,

Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1 x 1020 cm-3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonics applications. Er compounds could potentially solve this problem since they contain much higher Er density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor quality of crystals produced by various methods of thin film growth and deposition. This dissertation explores a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl ) in the nanowire form, which facilitates the growth of high quality single crystals. Growth methods for such single crystal ECS nanowires have been established. Various structural and optical characterizations have been carried out. The high crystal quality of ECS material leads to a long lifetime of the first excited state of Er3+ ions up to 1 ms at Er density higher than 1022 cm-3. This Er lifetime-density product was found to be the largest among all Er containing materials. A unique integrating sphere method was developed to measure the absorption cross section of ECS nanowires from 440 to 1580 nm. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement from a single ECS wire. It was estimated that such large signal enhancement can overcome the absorption to result in a net material gain, but not sufficient to compensate waveguide propagation loss. In order to suppress the upconversion process in ECS, Ytterbium (Yb) and Yttrium (Y) ions are introduced as substituent ions of Er in the ECS crystal structure to reduce Er density. While the addition of Yb ions only partially succeeded, erbium yttrium chloride silicate (EYCS) with controllable Er density was synthesized successfully. EYCS with 30 at. % Er was found to be the best. It shows the strongest PL emission at 1.5 μm, and thus can be potentially used as a high gain material.
ContributorsYin, Leijun (Author) / Ning, Cun-Zheng (Thesis advisor) / Chamberlin, Ralph (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2013
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Description
The implications of a changing climate have a profound impact on human life, society, and policy making. The need for accurate climate prediction becomes increasingly important as we better understand these implications. Currently, the most widely used climate prediction relies on the synthesis of climate model simulations organized by the

The implications of a changing climate have a profound impact on human life, society, and policy making. The need for accurate climate prediction becomes increasingly important as we better understand these implications. Currently, the most widely used climate prediction relies on the synthesis of climate model simulations organized by the Coupled Model Intercomparison Project (CMIP); these simulations are ensemble-averaged to construct projections for the 21st century climate. However, a significant degree of bias and variability in the model simulations for the 20th century climate is well-known at both global and regional scales. Based on that insight, this study provides an alternative approach for constructing climate projections that incorporates knowledge of model bias. This approach is demonstrated to be a viable alternative which can be easily implemented by water resource managers for potentially more accurate projections. Tests of the new approach are provided on a global scale with an emphasis on semiarid regional studies for their particular vulnerability to water resource changes, using both the former CMIP Phase 3 (CMIP3) and current Phase 5 (CMIP5) model archives. This investigation is accompanied by a detailed analysis of the dynamical processes and water budget to understand the behaviors and sources of model biases. Sensitivity studies of selected CMIP5 models are also performed with an atmospheric component model by testing the relationship between climate change forcings and model simulated response. The information derived from each study is used to determine the progressive quality of coupled climate models in simulating the global water cycle by rigorously investigating sources of model bias related to the moisture budget. As such, the conclusions of this project are highly relevant to model development and potentially may be used to further improve climate projections.
ContributorsBaker, Noel C (Author) / Huang, Huei-Ping (Thesis advisor) / Trimble, Steve (Committee member) / Anderson, James (Committee member) / Clarke, Amanda (Committee member) / Calhoun, Ronald (Committee member) / Arizona State University (Publisher)
Created2013
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Description
ABSTRACT A vortex tube is a device of a simple structure with no moving parts that can be used to separate a compressed gas into a hot stream and a cold stream. Many studies have been carried out to find the mechanisms of the energy separation in the vortex tube.

ABSTRACT A vortex tube is a device of a simple structure with no moving parts that can be used to separate a compressed gas into a hot stream and a cold stream. Many studies have been carried out to find the mechanisms of the energy separation in the vortex tube. Recent rapid development in computational fluid dynamics is providing a powerful tool to investigate the complex flow in the vortex tube. However various issues in these numerical simulations remain, such as choosing the most suitable turbulent model, as well as the lack of systematic comparative analysis. LES model for the vortex tube simulation is hardly used in the present literatures, and the influence of parameters on the performance of the vortex tube has scarcely been studied. This study is aimed to find the influence of various parameters on the performance of the vortex tube, the best geometric value of vortex tube and the realizable method to reach the required cold out flow rate 40 kg/s . First of all, setting up an original 3-D simulation vortex tube model. By comparing experiment results reported in the literature and our simulation results, a most suitable model for the simulation of the vortex tube is obtained. Secondly, we perform simulations to optimize parameters that can deliver a set of desired output, such as cold stream pressure, temperature and flow-rate. We also discuss the use of the cold air flow for petroleum engineering applications.
ContributorsCang, Ruijin (Author) / Chen, Kangping (Thesis advisor) / Huang, Hueiping (Committee member) / Calhoun, Ronald (Committee member) / Arizona State University (Publisher)
Created2013
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Description
In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals

In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals in the plasma react with the carbon groups leading to carbon removal for the ILD films. Results indicate that an N2 plasma forms an amide-like layer on the surface which apparently leads to reduced carbon abstraction from an H2 plasma process. In addition, FTIR spectra indicate the formation of hydroxyl (Si-OH) groups following the plasma exposure. Increased temperature (380 °C) processing leads to a reduction of the hydroxyl group formation compared to ambient temperature processes, resulting in reduced changes of the dielectric constant. For CMP Cu surfaces, the carbonate contamination was removed by an H2 plasma process at elevated temperature while the C-C and C-H contamination was removed by an N2 plasma process at elevated temperature. The second part of this study examined oxide stability and cleaning of Ru surfaces as well as consequent Cu film thermal stability with the Ru layers. The ~2 monolayer native Ru oxide was reduced after H-plasma processing. The thermal stability or islanding of the Cu film on the Ru substrate was characterized by in-situ XPS. After plasma cleaning of the Ru adhesion layer, the deposited Cu exhibited full coverage. In contrast, for Cu deposition on the Ru native oxide substrate, Cu islanding was detected and was described in terms of grain boundary grooving and surface and interface energies. The thermal stability of 7 nm Ti, Pt and Ru ii interfacial adhesion layers between a Cu film (10 nm) and a Ta barrier layer (4 nm) have been investigated in the third part. The barrier properties and interfacial stability have been evaluated by Rutherford backscattering spectrometry (RBS). Atomic force microscopy (AFM) was used to measure the surfaces before and after annealing, and all the surfaces are relatively smooth excluding islanding or de-wetting phenomena as a cause of the instability. The RBS showed no discernible diffusion across the adhesion layer/Ta and Ta/Si interfaces which provides a stable underlying layer. For a Ti interfacial layer RBS indicates that during 400 °C annealing Ti interdiffuses through the Cu film and accumulates at the surface. For the Pt/Cu system Pt interdiffuion is detected which is less evident than Ti. Among the three adhesion layer candidates, Ru shows negligible diffusion into the Cu film indicating thermal stability at 400 °C.
ContributorsLiu, Xin (Author) / Nemanich, Robert (Thesis advisor) / Chamberlin, Ralph (Committee member) / Chen, Tingyong (Committee member) / Smith, David (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Modern day gas turbine designers face the problem of hot mainstream gas ingestion into rotor-stator disk cavities. To counter this ingestion, seals are installed on the rotor and stator disk rims and purge air, bled off from the compressor, is injected into the cavities. It is desirable to reduce the

Modern day gas turbine designers face the problem of hot mainstream gas ingestion into rotor-stator disk cavities. To counter this ingestion, seals are installed on the rotor and stator disk rims and purge air, bled off from the compressor, is injected into the cavities. It is desirable to reduce the supply of purge air as this decreases the net power output as well as efficiency of the gas turbine. Since the purge air influences the disk cavity flow field and effectively the amount of ingestion, the aim of this work was to study the cavity velocity field experimentally using Particle Image Velocimetry (PIV). Experiments were carried out in a model single-stage axial flow turbine set-up that featured blades as well as vanes, with purge air supplied at the hub of the rotor-stator disk cavity. Along with the rotor and stator rim seals, an inner labyrinth seal was provided which split the disk cavity into a rim cavity and an inner cavity. First, static gage pressure distribution was measured to ensure that nominally steady flow conditions had been achieved. The PIV experiments were then performed to map the velocity field on the radial-tangential plane within the rim cavity at four axial locations. Instantaneous velocity maps obtained by PIV were analyzed sector-by-sector to understand the rim cavity flow field. It was observed that the tangential velocity dominated the cavity flow at low purge air flow rate, its dominance decreasing with increase in the purge air flow rate. Radially inboard of the rim cavity, negative radial velocity near the stator surface and positive radial velocity near the rotor surface indicated the presence of a recirculation region in the cavity whose radial extent increased with increase in the purge air flow rate. Qualitative flow streamline patterns are plotted within the rim cavity for different experimental conditions by combining the PIV map information with ingestion measurements within the cavity as reported in Thiagarajan (2013).
ContributorsPathak, Parag (Author) / Roy, Ramendra P (Thesis advisor) / Calhoun, Ronald (Committee member) / Lee, Taewoo (Committee member) / Arizona State University (Publisher)
Created2013
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Description
In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD

In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN. The first study involved an in-depth case study of PEALD Al2O3 growth using dimethylaluminum isopropoxide, with a special focus on oxygen plasma effects. Saturated and self-limiting growth of Al2O3 films were obtained with an enhanced growth rate within the PEALD temperature window (25-220 ºC). The properties of Al2O3 deposited at various temperatures were characterized to better understand the relation between the growth parameters and film properties. In the second study, the interface electronic structures of PEALD dielectrics on Ga-face GaN films were measured. Five promising dielectrics (Al2O3, HfO2, SiO2, La2O3, and ZnO) with a range of band gap energies were chosen. Prior to dielectric growth, a combined wet chemical and in-situ H2/N2 plasma clean process was employed to remove the carbon contamination and prepare the surface for dielectric deposition. The surface band bending and band offsets were measured by XPS and UPS for dielectrics on GaN. The trends of the experimental band offsets on GaN were related to the dielectric band gap energies. In addition, the experimental band offsets were near the calculated values based on the charge neutrality level model. The third study focused on the effect of the polarization bound charge of the Ga- and N-face GaN on interface electronic structures. A surface pretreatment process consisting of a NH4OH wet chemical and an in-situ NH3 plasma treatment was applied to remove carbon contamination, retain monolayer oxygen coverage, and potentially passivate N-vacancy related defects. The surface band bending and polarization charge compensation of Ga- and N-face GaN were investigated. The surface band bending and band offsets were determined for Al2O3, HfO2, and SiO2 on Ga- and N-face GaN. Different dielectric thicknesses and post deposition processing were investigated to understand process related defect formation and/or reduction.
ContributorsYang, Jialing (Author) / Nemanich, Robert J (Thesis advisor) / Chen, Tingyong (Committee member) / Peng, Xihong (Committee member) / Ponce, Fernando (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2014
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Description
Climate change has been one of the major issues of global economic and social concerns in the past decade. To quantitatively predict global climate change, the Intergovernmental Panel on Climate Change (IPCC) of the United Nations have organized a multi-national effort to use global atmosphere-ocean models to project anthropogenically induced

Climate change has been one of the major issues of global economic and social concerns in the past decade. To quantitatively predict global climate change, the Intergovernmental Panel on Climate Change (IPCC) of the United Nations have organized a multi-national effort to use global atmosphere-ocean models to project anthropogenically induced climate changes in the 21st century. The computer simulations performed with those models and archived by the Coupled Model Intercomparison Project - Phase 5 (CMIP5) form the most comprehensive quantitative basis for the prediction of global environmental changes on decadal-to-centennial time scales. While the CMIP5 archives have been widely used for policy making, the inherent biases in the models have not been systematically examined. The main objective of this study is to validate the CMIP5 simulations of the 20th century climate with observations to quantify the biases and uncertainties in state-of-the-art climate models. Specifically, this work focuses on three major features in the atmosphere: the jet streams over the North Pacific and Atlantic Oceans and the low level jet (LLJ) stream over central North America which affects the weather in the United States, and the near-surface wind field over North America which is relevant to energy applications. The errors in the model simulations of those features are systematically quantified and the uncertainties in future predictions are assessed for stakeholders to use in climate applications. Additional atmospheric model simulations are performed to determine the sources of the errors in climate models. The results reject a popular idea that the errors in the sea surface temperature due to an inaccurate ocean circulation contributes to the errors in major atmospheric jet streams.
ContributorsKulkarni, Sujay (Author) / Huang, Huei-Ping (Thesis advisor) / Calhoun, Ronald (Committee member) / Peet, Yulia (Committee member) / Arizona State University (Publisher)
Created2014
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Description
In this dissertation, combined photo-induced and thermionic electron emission from low work function diamond films is studied through low energy electron spectroscopy analysis and other associated techniques. Nitrogen-doped, hydrogen-terminated diamond films prepared by the microwave plasma chemical vapor deposition method have been the most focused material. The theme of this

In this dissertation, combined photo-induced and thermionic electron emission from low work function diamond films is studied through low energy electron spectroscopy analysis and other associated techniques. Nitrogen-doped, hydrogen-terminated diamond films prepared by the microwave plasma chemical vapor deposition method have been the most focused material. The theme of this research is represented by four interrelated issues. (1) An in-depth study describes combined photo-induced and thermionic emission from nitrogen-doped diamond films on molybdenum substrates, which were illuminated with visible light photons, and the electron emission spectra were recorded as a function of temperature. The diamond films displayed significant emissivity with a low work function of ~ 1.5 eV. The results indicate that these diamond emitters can be applied in combined solar and thermal energy conversion. (2) The nitrogen-doped diamond was further investigated to understand the physical mechanism and material-related properties that enable the combined electron emission. Through analysis of the spectroscopy, optical absorbance and photoelectron microscopy results from sample sets prepared with different configurations, it was deduced that the photo-induced electron generation involves both the ultra-nanocrystalline diamond and the interface between the diamond film and metal substrate. (3) Based on results from the first two studies, possible photon-enhanced thermionic emission was examined from nitrogen-doped diamond films deposited on silicon substrates, which could provide the basis for a novel approach for concentrated solar energy conversion. A significant increase of emission intensity was observed at elevated temperatures, which was analyzed using computer-based modeling and a combination of different emission mechanisms. (4) In addition, the electronic structure of vanadium-oxide-terminated diamond surfaces was studied through in-situ photoemission spectroscopy. Thin layers of vanadium were deposited on oxygen-terminated diamond surfaces which led to oxide formation. After thermal annealing, a negative electron affinity was found on boron-doped diamond, while a positive electron affinity was found on nitrogen-doped diamond. A model based on the barrier at the diamond-oxide interface was employed to analyze the results. Based on results of this dissertation, applications of diamond-based energy conversion devices for combined solar- and thermal energy conversion are proposed.
ContributorsSun, Tianyin (Author) / Nemanich, Robert (Thesis advisor) / Ponce, Fernando (Committee member) / Peng, Xihong (Committee member) / Spence, John (Committee member) / Treacy, Michael (Committee member) / Arizona State University (Publisher)
Created2013
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Description
This thesis describes the fabrication of several new classes of Ge1-x-ySixSny materials with the required compositions and crystal quality to engineer the band gaps above and below that of elemental Ge (0.8 eV) in the near IR. The work initially focused on Ge1-x-ySixSny (1-5% Sn, 4-20% Si) materials grown on

This thesis describes the fabrication of several new classes of Ge1-x-ySixSny materials with the required compositions and crystal quality to engineer the band gaps above and below that of elemental Ge (0.8 eV) in the near IR. The work initially focused on Ge1-x-ySixSny (1-5% Sn, 4-20% Si) materials grown on Ge(100) via gas-source epitaxy of Ge4H10, Si4H10 and SnD4. Both intrinsic and doped layers were produced with defect-free microstructure and viable thickness, allowing the fabrication of high-performance photodetectors. These exhibited low ideality factors, state-of-the-art dark current densities and adjustable absorption edges between 0.87 and 1.03 eV, indicating that the band gaps span a significant range above that of Ge. Next Sn-rich Ge1-x-ySixSny alloys (2-4% Si and 4-10% Sn) were fabricated directly on Si and were found to show significant optical emission using photoluminescence measurements, indicating that the alloys have direct band gaps below that of pure Ge in the range of 0.7-0.55 eV. A series of Sn-rich Ge1-x-ySixSny analogues (y>x) with fixed 3-4% Si content and progressively increasing Sn content in the 4-10% range were then grown on Ge buffered Si platforms for the purpose of improving the material's crystal quality. The films in this case exhibited lower defect densities than those grown on Si, allowing a meaningful study of both the direct and indirect gaps. The results show that the separation of the direct and indirect edges can be made smaller than in Ge even for non-negligible 3-4% Si content, confirming that with a suitable choice of Sn compositions the ternary Ge1-x-ySixSny reproduces all features of the electronic structure of binary Ge1-ySny, including the sought-after indirect-to-direct gap cross over. The above synthesis of optical quality Ge1-x-ySixSny on virtual Ge was made possible by the development of high quality Ge-on-Si buffers via chemical vapor deposition of Ge4H10. The resultant films exhibited structural and electrical properties significantly improved relative to state-of-the-art results obtained using conventional approaches. It was found that pure Ge4H10 facilitates the control of residual doping and enables p-i-n devices whose dark currents are not entirely determined by defects and whose zero-bias collection efficiencies are higher than those obtained from samples fabricated using alternative Ge-on-Si approaches.
ContributorsXu, Chi (Author) / Kouvetakis, John (Thesis advisor) / Menéndez, Jose (Thesis advisor) / Chizmeshya, Andrew (Committee member) / Drucker, Jeffrey (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2013
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Description
The initial microstructure of oxide fuel pellets can play a key role in their performance. At low burnups, the transport of fission products has a strong dependence on oxygen content, grain size distribution, porosity and grain boundary (GB) characteristics (crystallography, geometry and topology), all of which, in turn depend on

The initial microstructure of oxide fuel pellets can play a key role in their performance. At low burnups, the transport of fission products has a strong dependence on oxygen content, grain size distribution, porosity and grain boundary (GB) characteristics (crystallography, geometry and topology), all of which, in turn depend on processing conditions. These microstructural features can also affect the fuel densification, thermal conductivity and microstructure evolution inside the reactor. Understanding these effects can provide insight into microstructure evolution of fuels in-pile. In this work, mechanical and ion beam serial sectioning techniques were developed to obtain Electron Backscatter Diffraction (EBSD) data, both in 2-D and 3-D, for depleted UO2+X pellets manufactured under different conditions. The EBSD maps were used to relate processing conditions to microstructural features, with emphasis on special GBs according to the Coincident Site Lattice (CSL) model, as well as correlations between pore size and location in the microstructure. Furthermore, larger grains (at least 2.5 times the average grain size) were observed in all the samples and studied. Results indicate that larger grains, in samples manufactured under different conditions, dominate the overall crystallographic texture and have a fairly strong GB texture. Moreover, it seems that the preferential misorientation axis for these GBs, regardless of the O/M, is {001}. These results might be related to GB energy and structure and, suggest that the mechanism that controls grain growth seems to be independent of both processing conditions and stoichiometry. Additionally, a sample was heat treated to relate grain growth and crystallography. The results indicate that at least two mechanisms were involved. Lengthening of GBs was observed for larger grains. Another mechanism of grain growth was observed, in this case, grains rotate to match a neighboring grain forming a larger grain. In the new grain, the misorientation between the two neighboring grains decreases to less than 5 degrees, forming a new larger grain. The results presented in this work indicate that detailed studies of the initial microstructure of the fuel, with emphasis on the crystallography of grains and GBs could help to give insights on the in-pile microstructural evolution of the fuel.
ContributorsRudman Prieto, Karin (Author) / Peralta, Pedro (Thesis advisor) / Ponce, Fernando (Committee member) / Sieradski, Karl (Committee member) / Arizona State University (Publisher)
Created2014