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Barrett, The Honors College at Arizona State University proudly showcases the work of undergraduate honors students by sharing this collection exclusively with the ASU community.

Barrett accepts high performing, academically engaged undergraduate students and works with them in collaboration with all of the other academic units at Arizona State University. All Barrett students complete a thesis or creative project which is an opportunity to explore an intellectual interest and produce an original piece of scholarly research. The thesis or creative project is supervised and defended in front of a faculty committee. Students are able to engage with professors who are nationally recognized in their fields and committed to working with honors students. Completing a Barrett thesis or creative project is an opportunity for undergraduate honors students to contribute to the ASU academic community in a meaningful way.

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Voltage Sense Amplifier (VSA) Design For RRAM Cross-Point Memory Array Structures

Description
RRAM is an emerging technology that looks to replace FLASH NOR and possibly NAND memory. It is attractive because it uses an adjustable resistance and does not rely on charge; in the sub-10nm feature size circuitry this is critical. However, RRAM cross-point arrays suffer tremendously from leakage currents that prevent…

RRAM is an emerging technology that looks to replace FLASH NOR and possibly NAND memory. It is attractive because it uses an adjustable resistance and does not rely on charge; in the sub-10nm feature size circuitry this is critical. However, RRAM cross-point arrays suffer tremendously from leakage currents that prevent proper readings in larger array sizes. In this research an exponential IV selector was added to each cell to minimize this current. Using this technique the largest array-size supportable was determined to be 512x512 cells using the conventional voltage sense amplifier by HSPICE simulations. However, with the increase in array size, the sensing latency also remarkably increases due to more sneak path currents, approaching 873 ns for the 512x512 array.
ContributorsMadler, Ryan Anton (Author) / Yu, Shimeng (Thesis director) / Cao, Yu (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05