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The title “Regents’ Professor” is the highest faculty honor awarded at Arizona State University. It is conferred on ASU faculty who have made pioneering contributions in their areas of expertise, who have achieved a sustained level of distinction, and who enjoy national and international recognition for these accomplishments. This collection contains primarily open access works by ASU Regents' Professors.

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Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates

Description
This work presents a spectroscopic study of the thermally enhanced photoinduced electron emission from nitrogen-doped diamond films prepared on p-type silicon substrates. It has been shown that photon-enhanced thermionic emission (PETE) can substantially enhance thermionic emission intensity from a p-type semiconductor. An n-type diamond/p-type silicon structure was illuminated with 400–450…

This work presents a spectroscopic study of the thermally enhanced photoinduced electron emission from nitrogen-doped diamond films prepared on p-type silicon substrates. It has been shown that photon-enhanced thermionic emission (PETE) can substantially enhance thermionic emission intensity from a p-type semiconductor. An n-type diamond/p-type silicon structure was illuminated with 400–450 nm light, and the spectra of the emitted electrons showed a work function less than 2 eV and nearly an order of magnitude increase in emission intensity as the temperature was increased from ambient to ∼400 °C. Thermionic emission was negligible in this temperature range. The results are modeled in terms of contributions from PETE and direct photoelectron emission, and the large increase is consistent with a PETE component. The results indicate possible application in combined solar/thermal energy conversion devices.
ContributorsSun, Tianyin (Author) / Koeck, Franz (Author) / Rezikyan, Aram (Author) / Treacy, Michael (Author) / Nemanich, Robert (Author) / College of Liberal Arts and Sciences (Contributor) / Department of Physics (Contributor)
Created2014-09-15
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Temperature dependent simulation of diamond depleted Schottky PIN diodes

Description
Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context,…

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco[superscript ®] Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.
ContributorsHathwar, Raghuraj (Author) / Dutta, Maitreya (Author) / Koeck, Franz (Author) / Nemanich, Robert (Author) / Chowdhury, Srabanti (Author) / Goodnick, Stephen (Author) / Ira A. Fulton Schools of Engineering (Contributor) / School of Electrical, Computer and Energy Engineering (Contributor) / College of Liberal Arts and Sciences (Contributor) / Department of Physics (Contributor)
Created2016-06-08
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Advances in Thermionic Energy Conversion Through Single-Crystal n-Type Diamond

Description

Thermionic energy conversion, a process that allows direct transformation of thermal to electrical energy, presents a means of efficient electrical power generation as the hot and cold side of the corresponding heat engine are separated by a vacuum gap. Conversion efficiencies approaching those of the Carnot cycle are possible if…

Thermionic energy conversion, a process that allows direct transformation of thermal to electrical energy, presents a means of efficient electrical power generation as the hot and cold side of the corresponding heat engine are separated by a vacuum gap. Conversion efficiencies approaching those of the Carnot cycle are possible if material parameters of the active elements at the converter, i.e., electron emitter or cathode and collector or anode, are optimized for operation in the desired temperature range.

These parameters can be defined through the law of Richardson–Dushman that quantifies the ability of a material to release an electron current at a certain temperature as a function of the emission barrier or work function and the emission or Richardson constant. Engineering materials to defined parameter values presents the key challenge in constructing practical thermionic converters. The elevated temperature regime of operation presents a constraint that eliminates most semiconductors and identifies diamond, a wide band-gap semiconductor, as a suitable thermionic material through its unique material properties. For its surface, a configuration can be established, the negative electron affinity, that shifts the vacuum level below the conduction band minimum eliminating the surface barrier for electron emission.

In addition, its ability to accept impurities as donor states allows materials engineering to control the work function and the emission constant. Single-crystal diamond electrodes with nitrogen levels at 1.7 eV and phosphorus levels at 0.6 eV were prepared by plasma-enhanced chemical vapor deposition where the work function was controlled from 2.88 to 0.67 eV, one of the lowest thermionic work functions reported. This work function range was achieved through control of the doping concentration where a relation to the amount of band bending emerged. Upward band bending that contributed to the work function was attributed to surface states where lower doped homoepitaxial films exhibited a surface state density of ∼3 × 10[superscript 11] cm[superscript −2]. With these optimized doped diamond electrodes, highly efficient thermionic converters are feasible with a Schottky barrier at the diamond collector contact mitigated through operation at elevated temperatures.
ContributorsKoeck, Franz (Author) / Nemanich, Robert (Author) / College of Liberal Arts and Sciences (Contributor) / Department of Physics (Contributor)
Created2017-12-06
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Parent-Adolescent Conflict as Sequences of Reciprocal Negative Emotion: Links with Conflict Resolution and Adolescents' Behavior Problems

Description
Although conflict is a normative part of parent–adolescent relationships, conflicts that are long or highly negative are likely to be detrimental to these relationships and to youths’ development. In the present article, sequential analyses of data from 138 parent–adolescent dyads (adolescents’ mean age was 13.44, SD = 1.16; 52 %…

Although conflict is a normative part of parent–adolescent relationships, conflicts that are long or highly negative are likely to be detrimental to these relationships and to youths’ development. In the present article, sequential analyses of data from 138 parent–adolescent dyads (adolescents’ mean age was 13.44, SD = 1.16; 52 % girls, 79 % non-Hispanic White) were used to define conflicts as reciprocal exchanges of negative emotion observed while parents and adolescents were discussing “hot,” conflictual issues. Dynamic components of these exchanges, including who started the conflicts, who ended them, and how long they lasted, were identified. Mediation analyses revealed that a high proportion of conflicts ended by adolescents was associated with longer conflicts, which in turn predicted perceptions of the “hot” issue as unresolved and adolescent behavior problems. The findings illustrate advantages of using sequential analysis to identify patterns of interactions and, with some certainty, obtain an estimate of the contingent relationship between a pattern of behavior and child and parental outcomes. These interaction patterns are discussed in terms of the roles that parents and children play when in conflict with each other, and the processes through which these roles affect conflict resolution and adolescents’ behavior problems.
ContributorsMoed, Anat (Author) / Gershoff, Elizabeth T. (Author) / Eisenberg, Nancy (Author) / Hofer, Claire (Author) / Losoya, Sandra (Author) / Spinrad, Tracy (Author) / Liew, Jeffrey (Author) / College of Liberal Arts and Sciences (Contributor) / Department of Psychology (Contributor) / Sanford School of Social and Family Dynamics (Contributor)
Created2015-08-01
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Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Description
The effects of surface pretreatment, dielectric growth, and post deposition annealing on interface electronic structure and polarization charge compensation of Ga- and N-face bulk GaN were investigated. The cleaning process consisted of an ex-situ wet chemical NH[subscript 4]OH treatment and an in-situ elevated temperature NH[subscript 3] plasma process to remove…

The effects of surface pretreatment, dielectric growth, and post deposition annealing on interface electronic structure and polarization charge compensation of Ga- and N-face bulk GaN were investigated. The cleaning process consisted of an ex-situ wet chemical NH[subscript 4]OH treatment and an in-situ elevated temperature NH[subscript 3] plasma process to remove carbon contamination, reduce oxygen coverage, and potentially passivate N-vacancy related defects. After the cleaning process, carbon contamination decreased below the x-ray photoemission spectroscopy detection limit, and the oxygen coverage stabilized at ∼1 monolayer on both Ga- and N-face GaN. In addition, Ga- and N-face GaN had an upward band bending of 0.8 ± 0.1 eV and 0.6 ± 0.1 eV, respectively, which suggested the net charge of the surface states and polarization bound charge was similar on Ga- and N-face GaN. Furthermore, three dielectrics (HfO[subscript 2], Al[subscript 2]O[subscript 3], and SiO[subscript 2]) were prepared by plasma-enhanced atomic layer deposition on Ga- or N-face GaN and annealed in N[subscript 2] ambient to investigate the effect of the polarization charge on the interface electronic structure and band offsets. The respective valence band offsets of HfO[subscript 2], Al[subscript 2]O[subscript 3], and SiO[subscript 2] with respect to Ga- and N-face GaN were 1.4 ± 0.1, 2.0 ± 0.1, and 3.2 ± 0.1 eV, regardless of dielectric thickness. The corresponding conduction band offsets were 1.0 ± 0.1, 1.3 ± 0.1, and 2.3 ± 0.1 eV, respectively. Experimental band offset results were consistent with theoretical calculations based on the charge neutrality level model. The trend of band offsets for dielectric/GaN interfaces was related to the band gap and/or the electronic part of the dielectric constant. The effect of polarization charge on band offset was apparently screened by the dielectric-GaN interface states.
ContributorsYang, Jialing (Author) / Eller, Brianna S. (Author) / Nemanich, Robert (Author) / College of Liberal Arts and Sciences (Contributor) / Department of Physics (Contributor)
Created2014-09-28
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Predicting Sympathy and Prosocial Behavior From Young Children's Dispositional Sadness

Description
The purpose of this study was to examine whether dispositional sadness predicted children's prosocial behavior and if sympathy mediated this relation. Constructs were measured when children (n = 256 at time 1) were 18, 30, and 42 months old. Mothers and non-parental caregivers rated children's sadness; mothers, caregivers, and fathers rated…

The purpose of this study was to examine whether dispositional sadness predicted children's prosocial behavior and if sympathy mediated this relation. Constructs were measured when children (n = 256 at time 1) were 18, 30, and 42 months old. Mothers and non-parental caregivers rated children's sadness; mothers, caregivers, and fathers rated children's prosocial behavior; sympathy (concern and hypothesis testing) and prosocial behavior (indirect and direct, as well as verbal at older ages) were assessed with a task in which the experimenter feigned injury. In a panel path analysis, 30-month dispositional sadness predicted marginally higher 42-month sympathy; in addition, 30-month sympathy predicted 42-month sadness. Moreover, when controlling for prior levels of prosocial behavior, 30-month sympathy significantly predicted reported and observed prosocial behavior at 42 months. Sympathy did not mediate the relation between sadness and prosocial behavior (either reported or observed).
ContributorsEdwards, Alison (Author) / Eisenberg, Nancy (Author) / Spinrad, Tracy (Author) / Reiser, Mark (Author) / Wilkens, Natalie (Author) / Liew, Jeffrey (Author) / College of Liberal Arts and Sciences (Contributor) / Department of Psychology (Contributor) / Sanford School of Social and Family Dynamics (Contributor) / School of Mathematical and Statistical Sciences (Contributor)
Created2015-01-01
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Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States

Description
GaN-based devices are currently limited by reliability issues such as gate leakage and current collapse, where the mechanisms responsible for degradation are closely related to the electronic surface state configuration. Therefore, understanding the electronic surface state configuration of GaN-based materials will help improve device performance. Since GaN has an inherent…

GaN-based devices are currently limited by reliability issues such as gate leakage and current collapse, where the mechanisms responsible for degradation are closely related to the electronic surface state configuration. Therefore, understanding the electronic surface state configuration of GaN-based materials will help improve device performance. Since GaN has an inherent polarization, these materials are also subject to a bound polarization charge, which influences the electronic state configuration. In this study, the surface band bending of N-face GaN, Ga-face GaN, and Ga-face AlGaN was measured with x-ray photoemission spectroscopy after various cleaning steps to investigate the effects of the polarization. Despite the different surface bound charge on these materials, similar band bending was observed regardless of the magnitude or direction of the charge. Specifically, the band bending varied from −0.1 eV to 0.9 eV on these samples, which supported the models of a Fermi level pinning state at ∼0.4 eV to 0.8 eV below the conduction band. Based on available literature, we suggest this pinning state is indirectly evident of a nitrogen vacancy or gallium-dangling bond.
ContributorsEller, Brianna S. (Author) / Yang, Jialing (Author) / Nemanich, Robert (Author) / College of Liberal Arts and Sciences (Contributor) / Department of Physics (Contributor)
Created2014-12-01