This growing collection consists of scholarly works authored by ASU-affiliated faculty, staff, and community members, and it contains many open access articles. ASU-affiliated authors are encouraged to Share Your Work in KEEP.

Displaying 11 - 20 of 26
Filtering by

Clear all filters

129205-Thumbnail Image.png
Description

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001)

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10-5 A/cm2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (Dit) is estimated to be as low as ∼2 × 1012 cm-2 eV-1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased Dit value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

ContributorsMcDaniel, Martin D. (Author) / Hu, Chengqing (Author) / Lu, Sirong (Author) / Ngo, Thong Q. (Author) / Posadas, Agham (Author) / Jiang, Aiting (Author) / Smith, David (Author) / Yu, Edward T. (Author) / Demkov, Alexander A. (Author) / Ekerdt, John G. (Author) / College of Liberal Arts and Sciences (Contributor)
Created2015-02-07
129169-Thumbnail Image.png
Description

In this work, we numerically demonstrate an infrared (IR) frequency-tunable selective thermal emitter made of graphene-covered silicon carbide (SiC) gratings. Rigorous coupled-wave analysis shows temporally-coherent emission peaks associated with magnetic polariton (MP), whose resonance frequency can be dynamically tuned within the phonon absorption band of SiC by varying graphene chemical

In this work, we numerically demonstrate an infrared (IR) frequency-tunable selective thermal emitter made of graphene-covered silicon carbide (SiC) gratings. Rigorous coupled-wave analysis shows temporally-coherent emission peaks associated with magnetic polariton (MP), whose resonance frequency can be dynamically tuned within the phonon absorption band of SiC by varying graphene chemical potential. An analytical inductor–capacitor circuit model is introduced to quantitatively predict the resonance frequency and further elucidate the mechanism for the tunable emission peak. The effects of grating geometric parameters, such as grating height, groove width and grating period, on the selective emission peak are explored. The direction-independent behavior of MP and associated coherent emission are also demonstrated. Moreover, by depositing four layers of graphene sheets onto the SiC gratings, a large tunability of 8.5% in peak frequency can be obtained to yield the coherent emission covering a broad frequency range from 820 to 890 cm-1. The novel tunable metamaterial could pave the way to a new class of tunable thermal sources in the IR region.

ContributorsWang, Hao (Author) / Yang, Yue (Author) / Wang, Liping (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2015-04-01
129606-Thumbnail Image.png
Description

The (110) plane of Co3O4 spinel exhibits significantly higher rates of carbon monoxide conversion due to the presence of active Co3+ species at the surface. However, experimental studies of Co3O4 (110) surfaces and interfaces have been limited by the difficulties in growing high-quality films. We report thin (10–250 Å) Co3O4 films

The (110) plane of Co3O4 spinel exhibits significantly higher rates of carbon monoxide conversion due to the presence of active Co3+ species at the surface. However, experimental studies of Co3O4 (110) surfaces and interfaces have been limited by the difficulties in growing high-quality films. We report thin (10–250 Å) Co3O4 films grown by molecular beam epitaxy in the polar (110) direction on MgAl2O4 substrates. Reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and transmission electron microscopy measurements attest to the high quality of the as-grown films. Furthermore, we investigate the electronic structure of this material by core level and valence band x-ray photoelectron spectroscopy, and first-principles density functional theory calculations. Ellipsometry reveals a direct band gap of 0.75 eV and other interband transitions at higher energies. A valence band offset of 3.2 eV is measured for the Co3O4/MgAl2O4 heterostructure. Magnetic measurements show the signature of antiferromagnetic ordering at 49 K. FTIR ellipsometry finds three infrared-active phonons between 300 and 700 cm-1.

ContributorsKormondy, Kristy J. (Author) / Posadas, Agham B. (Author) / Slepko, Alexander (Author) / Dhamdhere, Ajit (Author) / Smith, David (Author) / Mitchell, Khadijih N. (Author) / Willett-Gies, Travis I. (Author) / Zollner, Stefan (Author) / Marshall, Luke G. (Author) / Zhou, Jianshi (Author) / Demkov, Alexander A. (Author) / College of Liberal Arts and Sciences (Contributor)
Created2014-06-28
129617-Thumbnail Image.png
Description

Zintl phases are a class of intermetallic materials that have simultaneously ionic and covalent bonding resulting from charge transfer between two different atomic species. We present a combined first principles and experimental study of Zintl-phase SrAl4, which is grown in thin film form on the perovskite oxide LaAlO3 using molecular

Zintl phases are a class of intermetallic materials that have simultaneously ionic and covalent bonding resulting from charge transfer between two different atomic species. We present a combined first principles and experimental study of Zintl-phase SrAl4, which is grown in thin film form on the perovskite oxide LaAlO3 using molecular beam epitaxy. The structural properties are investigated using reflection-high-energy electron diffraction, x-ray diffraction, and cross-section transmission electron microscopy, which reveal relaxed epitaxial island growth. Photoelectron spectroscopy measurements verify the Zintl-Klemm nature of the bonding in the material and are utilized to determine the band offset and the work function of SrAl4, while transport measurements confirm its metallic behavior. The experimentally observed properties are confirmed using density functional calculations.

ContributorsSchlipf, Lukas (Author) / Slepko, Alexander (Author) / Posadas, Agham B. (Author) / Seinige, Heidi (Author) / Dhamdhere, Ajit (Author) / Tsoi, Maxim (Author) / Smith, David (Author) / Demkov, Alexander A. (Author) / College of Liberal Arts and Sciences (Contributor)
Created2013-07
129636-Thumbnail Image.png
Description

This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (lambda/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 mu m). A series of ZnTe/GaSb DBRs has been successfully grown on GaSb (001) substrates using

This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (lambda/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 mu m). A series of ZnTe/GaSb DBRs has been successfully grown on GaSb (001) substrates using molecular beam epitaxy (MBE). During the MBE growth, a temperature ramp was applied to the initial growth of GaSb layers on ZnTe to protect the ZnTe underneath from damage due to thermal evaporation. Post-growth characterization using high-resolution x-ray diffraction, atomic force microscopy, and transmission electron microscopy reveals smooth surface morphology, low defect density, and coherent interfaces. Reflectance spectroscopy results show that a DBR sample of seven lambda/4 pairs has a peak reflectance as high as 99.0% centered at 2.56 mu m with a bandwidth of 517 nm.

ContributorsFan, Jin (Author) / Liu, Xinyu (Author) / Ouyang, Lu (Author) / Pimpinella, Richard E. (Author) / Dobrowolska, Margaret (Author) / Furdyna, Jacek K. (Author) / Smith, David (Author) / Zhang, Yong-Hang (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2013-10-28
127974-Thumbnail Image.png
Description

We numerically demonstrate a switchable metamaterial absorber/emitter by thermally turning on or off the excitation of magnetic resonance upon the phase transition of vanadium dioxide (VO2). Perfect absorption peak exists around the wavelength of 5 lm when the excitation of magnetic resonance is supported with the insulating VO2 spacer layer.

We numerically demonstrate a switchable metamaterial absorber/emitter by thermally turning on or off the excitation of magnetic resonance upon the phase transition of vanadium dioxide (VO2). Perfect absorption peak exists around the wavelength of 5 lm when the excitation of magnetic resonance is supported with the insulating VO2 spacer layer. The wavelength-selective absorption is switched off when the magnetic resonance is disabled with metallic VO2 that shorts the top and bottom metallic structures. The resonance wavelength can be tuned with different geometry, and the switchable metamaterial exhibits diffuse behaviors at oblique angles. The results would facilitate the design of switchable metamaterials for active control in energy and sensing applications.

ContributorsWang, Hao (Author) / Wang, Yue (Author) / Wang, Liping (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2014-08-19
128035-Thumbnail Image.png
Description

Recently, near-field thermal radiation has attracted much attention in several fields since it can exceed the Planck blackbody limit through the coupling of evanescent waves. In this work, near-field radiative heat transfer between two semi-infinite dual uniaxial electromagnetic metamaterials with two different material property sets is theoretically analyzed. The near-field

Recently, near-field thermal radiation has attracted much attention in several fields since it can exceed the Planck blackbody limit through the coupling of evanescent waves. In this work, near-field radiative heat transfer between two semi-infinite dual uniaxial electromagnetic metamaterials with two different material property sets is theoretically analyzed. The near-field radiative heat transfer is calculated using fluctuational electrodynamics incorporated with anisotropic wave optics. The underlying mechanisms, namely, magnetic hyperbolic mode, magnetic surface polariton, electrical hyperbolic mode, and electrical surface polariton, between two homogeneous dual uniaxial electromagnetic metamaterials are investigated by examining the transmission coefficient and the spectral heat flux. The effect of vacuum gap distance is also studied, which shows that the enhancement at smaller vacuum gap is mainly due to hyperbolic mode and surface plasmon polariton modes. In addition, the results show that the contribution of s-polarized waves is significant and should not be excluded due to the strong magnetic response regardless of vacuum gap distances. The fundamental understanding and insights obtained here will facilitate the finding and application of novel materials for near-field thermal radiation.

ContributorsChang, Jui-Yung (Author) / Basu, Soumyadipta (Author) / Yang, Yue (Author) / Wang, Liping (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2016-06-07
128068-Thumbnail Image.png
Description

The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TIs) exhibits many fascinating physical properties for potential applications in nanoelectronics and spintronics. However, in transition metal–doped TIs, the only experimentally demonstrated QAHE system to date, the QAHE is lost at practically relevant temperatures. This

The quantum anomalous Hall effect (QAHE) that emerges under broken time-reversal symmetry in topological insulators (TIs) exhibits many fascinating physical properties for potential applications in nanoelectronics and spintronics. However, in transition metal–doped TIs, the only experimentally demonstrated QAHE system to date, the QAHE is lost at practically relevant temperatures. This constraint is imposed by the relatively low Curie temperature (T[subscript c]) and inherent spin disorder associated with the random magnetic dopants. We demonstrate drastically enhanced T[subscript c] by exchange coupling TIs to Tm[subscript 3]Fe[subscript 5]O[subscript 12], a high-T[subscript c] magnetic insulator with perpendicular magnetic anisotropy. Signatures showing that the TI surface states acquire robust ferromagnetism are revealed by distinct squared anomalous Hall hysteresis loops at 400 K. Point-contact Andreev reflection spectroscopy confirms that the TI surface is spin-polarized. The greatly enhanced T[subscript c], absence of spin disorder, and perpendicular anisotropy are all essential to the occurrence of the QAHE at high temperatures.

ContributorsTang, Chi (Author) / Chang, Cui-Zu (Author) / Zhao, Gejian (Author) / Liu, Yawen (Author) / Jiang, Zilong (Author) / Liu, Chao-Xing (Author) / McCartney, Martha (Author) / Smith, David (Author) / Chen, Tingyong (Author) / Moodera, Jagadeesh S. (Author) / Shi, Jing (Author) / College of Liberal Arts and Sciences (Contributor)
Created2017-06-23
127809-Thumbnail Image.png
Description

There is a need for indicators of transportation-land use system quality that are understandable to a wide range of stakeholders, and which can provide immediate feedback on the quality of interactively designed scenarios. Location-based accessibility indicators are promising candidates, but indicator values can vary strongly depending on time of day

There is a need for indicators of transportation-land use system quality that are understandable to a wide range of stakeholders, and which can provide immediate feedback on the quality of interactively designed scenarios. Location-based accessibility indicators are promising candidates, but indicator values can vary strongly depending on time of day and transfer wait times. Capturing this variation increases complexity, slowing down calculations. We present new methods for rapid yet rigorous computation of accessibility metrics, allowing immediate feedback during early-stage transit planning, while being rigorous enough for final analyses. Our approach is statistical, characterizing the uncertainty and variability in accessibility metrics due to differences in departure time and headway-based scenario specification. The analysis is carried out on a detailed multi-modal network model including both public transportation and streets. Land use data are represented at high resolution. These methods have been implemented as open-source software running on commodity cloud infrastructure. Networks are constructed from standard open data sources, and scenarios are built in a map-based web interface. We conclude with a case study, describing how these methods were applied in a long-term transportation planning process for metropolitan Amsterdam.

ContributorsConway, Matthew Wigginton (Author) / Byrd, Andrew (Author) / van der Linden, Marco (Author)
Created2017
127815-Thumbnail Image.png
Description

Successful public transit systems increase the value of locations they serve. Capturing this location value to help fund transit is often sensible, but challenging. This article defines location value capture, and synthesizes lessons learned from six European and North American transit agencies that have experience with location value capture funding.

Successful public transit systems increase the value of locations they serve. Capturing this location value to help fund transit is often sensible, but challenging. This article defines location value capture, and synthesizes lessons learned from six European and North American transit agencies that have experience with location value capture funding. The opportunities for and barriers to implementing location value capture fall into three categories: agency institutional authority, agency organizational mission, and public support for transit. When any of these factors is incompatible with a location value capture strategy, implementation becomes difficult. In four of the cases studied, dramatic institutional change was critical for success. In five cases, acute crisis was a catalyst for institutional change, value capture implementation, or both. Using value capture strategies to fund transit requires practitioners to both understand agency organizational constraints, and to view transit agencies as institutions that can transform in response to changing situations.

ContributorsSalon, Deborah (Author) / Sclar, Elliott (Author) / Barone, Richard (Author)
Created2017-05-12