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We calculate the electron self-energy in a magnetized QED plasma to the leading perturbative order in the coupling constant and to the linear order in an external magnetic field. We find that the chiral asymmetry of the normal ground state of the system is characterized by two new Dirac structures. One of them is the familiar chiral shift previously discussed in the Nambu-Jona-Lasinio model. The other structure is new. It formally looks like that of the chiral chemical potential but is an odd function of the longitudinal component of the momentum, directed along the magnetic field. The origin of this new parity-even chiral structure is directly connected with the long-range character of the QED interaction. The form of the Fermi surface in the weak magnetic field is determined.

We calculate the leading radiative corrections to the axial current in the chiral separation effect in dense QED in a magnetic field. Contrary to the conventional wisdom suggesting that the axial current should be exactly fixed by the chiral anomaly relation and is described by the topological contribution on the lowest Landau level in the free theory, we find in fact that the axial current receives nontrivial radiative corrections. The direct calculations performed to the linear order in the external magnetic field show that the nontrivial radiative corrections to the axial current are provided by the Fermi surface singularity in the fermion propagator at nonzero fermion density.

Recently fabricated two-dimensional phosphorene crystal structures have demonstrated great potential in applications of electronics. In this paper, strain effect on the electronic band structure of phosphorene was studied using first-principles methods including density functional theory (DFT) and hybrid functionals. It was found that phosphorene can withstand a tensile stress and strain up to 10 N/m and 30%, respectively. The band gap of phosphorene experiences a direct-indirect-direct transition when axial strain is applied. A moderate −2% compression in the zigzag direction can trigger this gap transition. With sufficient expansion (+11.3%) or compression (−10.2% strains), the gap can be tuned from indirect to direct again. Five strain zones with distinct electronic band structure were identified, and the critical strains for the zone boundaries were determined. Although the DFT method is known to underestimate band gap of semiconductors, it was proven to correctly predict the strain effect on the electronic properties with validation from a hybrid functional method in this work. The origin of the gap transition was revealed, and a general mechanism was developed to explain energy shifts with strain according to the bond nature of near-band-edge electronic orbitals. Effective masses of carriers in the armchair direction are an order of magnitude smaller than that of the zigzag axis, indicating that the armchair direction is favored for carrier transport. In addition, the effective masses can be dramatically tuned by strain, in which its sharp jump/drop occurs at the zone boundaries of the direct-indirect gap transition.