ASU Scholarship Showcase

Plasmodium vivax is the most prevalent malarial species in South America and exerts a substantial burden on the populations it affects. The control and eventual elimination of P. vivax are global health priorities. Genomic research contributes to this objective by improving our understanding of the biology of P. vivax and through the development of new genetic markers that can be used to monitor efforts to reduce malaria transmission. Here we analyze whole-genome data from eight field samples from a region in Cordóba, Colombia where malaria is endemic. We find considerable genetic diversity within this population, a result that contrasts with earlier studies suggesting that P. vivax had limited diversity in the Americas. We also identify a selective sweep around a substitution known to confer resistance to sulphadoxine-pyrimethamine (SP). This is the first observation of a selective sweep for SP resistance in this species. These results indicate that P. vivax has been exposed to SP pressure even when the drug is not in use as a first line treatment for patients afflicted by this parasite. We identify multiple non-synonymous substitutions in three other genes known to be involved with drug resistance in Plasmodium species. Finally, we found extensive microsatellite polymorphisms. Using this information we developed 18 polymorphic and easy to score microsatellite loci that can be used in epidemiological investigations in South America.

Inbreeding in hermaphroditic plants can occur through two different mechanisms: biparental inbreeding, when a plant mates with a related individual, or self-fertilization, when a plant mates with itself. To avoid inbreeding, many hermaphroditic plants have evolved self-incompatibility (SI) systems which prevent or limit self-fertilization. One particular SI system—homomorphic SI—can also reduce biparental inbreeding. Homomorphic SI is found in many angiosperm species, and it is often assumed that the additional benefit of reduced biparental inbreeding may be a factor in the success of this SI system. To test this assumption, we developed a spatially-explicit, individual-based simulation of plant populations that displayed three different types of homomorphic SI. We measured the total level of inbreeding avoidance by comparing each population to a self-compatible population (NSI), and we measured biparental inbreeding avoidance by comparing to a population of self-incompatible plants that were free to mate with any other individual (PSI).

Because biparental inbreeding is more common when offspring dispersal is limited, we examined the levels of biparental inbreeding over a range of dispersal distances. We also tested whether the introduction of inbreeding depression affected the level of biparental inbreeding avoidance. We found that there was a statistically significant decrease in autozygosity in each of the homomorphic SI populations compared to the PSI population and, as expected, this was more pronounced when seed and pollen dispersal was limited. However, levels of homozygosity and inbreeding depression were not reduced. At low dispersal, homomorphic SI populations also suffered reduced female fecundity and had smaller census population sizes. Overall, our simulations showed that the homomorphic SI systems had little impact on the amount of biparental inbreeding in the population especially when compared to the overall reduction in inbreeding compared to the NSI population. With further study, this observation may have important consequences for research into the origin and evolution of homomorphic self-incompatibility systems.

The development of non-volatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching and measurable semiconductor modulation. Here we report a true ferroelectric field effect—carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in epitaxial c-axis-oriented BaTiO₃ grown by molecular beam epitaxy. Using the density functional theory, we demonstrate that switching of BaTiO₃ polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms BaTiO₃ tetragonality and the absence of any low-permittivity interlayer at the interface with Ge. The non-volatile, switchable nature of the single-domain out-of-plane ferroelectric polarization of BaTiO₃ is confirmed using piezoelectric force microscopy. The effect of the polarization switching on the conductivity of the underlying Ge is measured using microwave impedance microscopy, clearly demonstrating a ferroelectric field effect.

Background: Blindness has evolved repeatedly in cave-dwelling organisms, and many hypotheses have been proposed to explain this observation, including both accumulation of neutral loss-of-function mutations and adaptation to darkness. Investigating the loss of sight in cave dwellers presents an opportunity to understand the operation of fundamental evolutionary processes, including drift, selection, mutation, and migration.

Results: Here we model the evolution of blindness in caves. This model captures the interaction of three forces: (1) selection favoring alleles causing blindness, (2) immigration of sightedness alleles from a surface population, and (3) mutations creating blindness alleles. We investigated the dynamics of this model and determined selection-strength thresholds that result in blindness evolving in caves despite immigration of sightedness alleles from the surface. We estimate that the selection coefficient for blindness would need to be at least 0.005 (and maybe as high as 0.5) for blindness to evolve in the model cave-organism, Astyanax mexicanus.

Conclusions: Our results indicate that strong selection is required for the evolution of blindness in cave-dwelling organisms, which is consistent with recent work suggesting a high metabolic cost of eye development.

In this paper, we report on the highly conductive layer formed at the crystalline γ-alumina/SrTiO₃ interface, which is attributed to oxygen vacancies. We describe the structure of thin γ-alumina layers deposited by molecular beam epitaxy on SrTiO3 (001) at growth temperatures in the range of 400–800 °C, as determined by reflection-high-energy electron diffraction, x-ray diffraction, and high-resolution electron microscopy. In situ x-ray photoelectron spectroscopy was used to confirm the presence of the oxygen-deficient layer. Electrical characterization indicates sheet carrier densities of ∼1013 cm−2 at room temperature for the sample deposited at 700 °C, with a maximum electron Hall mobility of 3100 cm²V^-1s^-1 at 3.2 K and room temperature mobility of 22 cm²V^-1s^-1. Annealing in oxygen is found to reduce the carrier density and turn a conductive sample into an insulator.

This paper reports the molecular beam epitaxial growth and characterization of high-reflectivity and broad-bandwidth distributed Bragg reflectors (DBRs) made of ZnTe/GaSb quarter-wavelength (lambda/4) layers for optoelectronic applications in the midwave infrared spectral range (2-5 mu m). A series of ZnTe/GaSb DBRs has been successfully grown on GaSb (001) substrates using molecular beam epitaxy (MBE). During the MBE growth, a temperature ramp was applied to the initial growth of GaSb layers on ZnTe to protect the ZnTe underneath from damage due to thermal evaporation. Post-growth characterization using high-resolution x-ray diffraction, atomic force microscopy, and transmission electron microscopy reveals smooth surface morphology, low defect density, and coherent interfaces. Reflectance spectroscopy results show that a DBR sample of seven lambda/4 pairs has a peak reflectance as high as 99.0% centered at 2.56 mu m with a bandwidth of 517 nm.

We report a study of the magnetic domain structure of nanocrystalline thin films of nickel-zinc ferrite. The ferrite films were synthesized using aqueous spin-spray coating at low temperature (∼90 °C) and showed high complex permeability in the GHz range. Electron microscopy and microanalysis revealed that the films consisted of columnar grains with uniform chemical composition. Off-axis electron holography combined with magnetic force microscopy indicated a multi-grain domain structure with in-plane magnetization. The correlation between the magnetic domain morphology and crystal structure is briefly discussed.

The Quadrangles Av-11 and Av-12 on Vesta are located at the northern rim of the giant Rheasilvia south polar impact basin. The primary geologic units in Av-11 and Av-12 include material from the Rheasilvia impact basin formation, smooth material and different types of impact crater structures (such as bimodal craters, dark and bright crater ray material and dark ejecta material). Av-11 and Av-12 exhibit almost the full range of mass wasting features observed on Vesta, such as slump blocks, spur-and-gully morphologies and landslides within craters. Processes of collapse, slope instability and seismically triggered events force material to slump down crater walls or scarps and produce landslides or rotational slump blocks. The spur-and-gully morphology that is known to form on Mars is also observed on Vesta; however, on Vesta this morphology formed under dry conditions.

A variety of geologic landforms and features are observed within quadrangle Av-13 Tuccia in the southern hemisphere of Vesta. The quadrangle covers parts of the highland Vestalia Terra as well as the floors of the large Rheasilvia and Veneneia impact basins, which results in a substantial elevation difference of more than 40 km between the northern and the southern portions of the quadrangle. Measurements of crater size–frequency distributions within and surrounding the Rheasilvia basin indicate that gravity-driven mass wasting in the interior of the basin has been important, and that the basin has a more ancient formation age than would be expected from the crater density on the basin floor alone. Subsequent to its formation, Rheasilvia was superimposed by several mid-sized impact craters. The most prominent craters are Tuccia, Eusebia, Vibidia, Galeria, and Antonia, whose geology and formation ages are investigated in detail in this work. These impact structures provide a variety of morphologies indicating different sorts of subsequent impact-related or gravity-driven mass wasting processes. Understanding the geologic history of the relatively young craters in the Rheasilvia basin is important in order to understand the even more degraded craters in other regions of Vesta.

In this paper we present a time-stratigraphic scheme and geologic time scale for the protoplanet Vesta, based on global geologic mapping and other analyses of NASA Dawn spacecraft data, complemented by insights gained from laboratory studies of howardite–eucrite–diogenite (HED) meteorites and geophysical modeling. On the basis of prominent impact structures and their associated deposits, we propose a time scale for Vesta that consists of four geologic time periods: Pre-Veneneian, Veneneian, Rheasilvian, and Marcian. The Pre-Veneneian Period covers the time from the formation of Vesta up to the Veneneia impact event, from 4.6 Ga to >2.1 Ga (using the asteroid flux-derived chronology system) or from 4.6 Ga to 3.7 Ga (under the lunar-derived chronology system). The Veneneian Period covers the time span between the Veneneia and Rheasilvia impact events, from >2.1 to 1 Ga (asteroid flux-derived chronology) or from 3.7 to 3.5 Ga (lunar-derived chronology), respectively. The Rheasilvian Period covers the time span between the Rheasilvia and Marcia impact events, and the Marcian Period covers the time between the Marcia impact event until the present. The age of the Marcia impact is still uncertain, but our current best estimates from crater counts of the ejecta blanket suggest an age between ∼120 and 390 Ma, depending upon choice of chronology system used. Regardless, the Marcia impact represents the youngest major geologic event on Vesta. Our proposed four-period geologic time scale for Vesta is, to a first order, comparable to those developed for other airless terrestrial bodies.