ASU Scholarship Showcase

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe₂/MoS₂ heterostructures by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe₂ layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.

The strong light-matter interaction and the valley selective optical selection rules make monolayer (ML) MoS₂ an exciting 2D material for fundamental physics and optoelectronics applications. But, so far, optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogeneous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the better-characterized ML materials MoSe₂ and WSe₂. In this work, we show that encapsulation of ML MoS₂ in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T = 4 K. Narrow optical transition linewidths are also observed in encapsulated WS₂, WSe₂, and MoSe₂ MLs. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high-quality samples. Among the new possibilities offered by the well-defined optical transitions, we measure the homogeneous broadening induced by the interaction with phonons in temperature-dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML.

In this study, WRF-Chem is utilized at high resolution (1.333 km grid spacing for the innermost domain) to investigate impacts of southern California anthropogenic emissions (SoCal) on Phoenix ground-level ozone concentrations ([O³]) for a pair of recent exceedance episodes. First, WRF-Chem control simulations, based on the US Environmental Protection Agency (EPA) 2005 National Emissions Inventories (NEI05), are conducted to evaluate model performance. Compared with surface observations of hourly ozone, CO, NO^X, and wind fields, the control simulations reproduce observed variability well. Simulated [O³] are comparable with the previous studies in this region. Next, the relative contribution of SoCal and Arizona local anthropogenic emissions (AZ) to ozone exceedances within the Phoenix metropolitan area is investigated via a trio of sensitivity simulations: (1) SoCal emissions are excluded, with all other emissions as in Control; (2) AZ emissions are excluded with all other emissions as in Control; and (3) SoCal and AZ emissions are excluded (i.e., all anthropogenic emissions are eliminated) to account only for Biogenic emissions and lateral boundary inflow (BILB). Based on the USEPA NEI05, results for the selected events indicate the impacts of AZ emissions are dominant on daily maximum 8 h average (DMA8) [O³] in Phoenix. SoCal contributions to DMA8 [O³] for the Phoenix metropolitan area range from a few ppbv to over 30 ppbv (10–30 % relative to Control experiments). [O³] from SoCal and AZ emissions exhibit the expected diurnal characteristics that are determined by physical and photochemical processes, while BILB contributions to DMA8 [O³] in Phoenix also play a key role.

Plasmonic and metamaterial based nano/micro-structured materials enable spectrally selective resonant absorption, where the resonant bandwidth and absorption intensity can be engineered by controlling the size and geometry of nanostructures. Here, we demonstrate a simple, lithography-free approach for obtaining a resonant and dynamically tunable broadband absorber based on vanadium dioxide (VO2) phase transition. Using planar layered thin film structures, where top layer is chosen to be an ultrathin (20 nm) VO2 film, we demonstrate broadband IR light absorption tuning (from similar to 90% to similar to 30% in measured absorption) over the entire mid-wavelength infrared spectrum. Our numerical and experimental results indicate that the bandwidth of the absorption bands can be controlled by changing the dielectric spacer layer thickness. Broadband tunable absorbers can find applications in absorption filters, thermal emitters, thermophotovoltaics, and sensing.