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The electronic structure of eight zinc-centered porphyrin macrocyclic molecules are investigated using density functional theory for ground-state properties, time-dependent density functional theory (TDDFT) for excited states, and Franck-Condon (FC) analysis for further characterization of the UV-vis spectrum. Symmetry breaking was utilized to find the lowest energy of the excited states

The electronic structure of eight zinc-centered porphyrin macrocyclic molecules are investigated using density functional theory for ground-state properties, time-dependent density functional theory (TDDFT) for excited states, and Franck-Condon (FC) analysis for further characterization of the UV-vis spectrum. Symmetry breaking was utilized to find the lowest energy of the excited states for many states in the spectra. To confirm the theoretical modeling, the spectroscopic result from zinc phthalocyanine (ZnPc) is used to compare to the TDDFT and FC result. After confirmation of the modeling, five more planar molecules are investigated: zinc tetrabenzoporphyrin (ZnTBP), zinc tetrabenzomonoazaporphyrin (ZnTBMAP), zinc tetrabenzocisdiazaporphyrin (ZnTBcisDAP), zinc tetrabenzotransdiazaporphyrin (ZnTBtransDAP), and zinc tetrabenzotriazaporphyrin (ZnTBTrAP). The two latter molecules are then compared to their phenylated sister molecules: zinc monophenyltetrabenzotriazaporphyrin (ZnMPTBTrAP) and zinc diphenyltetrabenzotransdiazaporphyrin (ZnDPTBtransDAP). The spectroscopic results from the synthesis of ZnMPTBTrAP and ZnDPTBtransDAP are then compared to their theoretical models and non-phenylated pairs. While the Franck-Condon results were not as illuminating for every B-band, the Q-band results were successful in all eight molecules, with a considerable amount of spectral analysis in the range of interest between 300 and 750 nm. The π-π* transitions are evident in the results for all of the Q bands, while satellite vibrations are also visible in the spectra. In particular, this investigation finds that, while ZnPc has a D4h symmetry at ground state, a C4v symmetry is predicted in the excited-state Q band region. The theoretical results for ZnPc found an excitation energy at the Q-band 0-0 transition of 1.88 eV in vacuum, which is in remarkable agreement with published gas-phase spectroscopy, as well as our own results of ZnPc in solution with Tetrahydrofuran that are provided in this paper.

ContributorsTheisen, Rebekah (Author) / Huang, Liang (Author) / Fleetham, Tyler (Author) / Adams, James (Author) / Li, Jian (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2015-03-07
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Description

The development of non-volatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching and measurable semiconductor modulation. Here we report a true ferroelectric field effect—carrier density modulation in an underlying Ge(001) substrate by switching

The development of non-volatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching and measurable semiconductor modulation. Here we report a true ferroelectric field effect—carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in epitaxial c-axis-oriented BaTiO3 grown by molecular beam epitaxy. Using the density functional theory, we demonstrate that switching of BaTiO3 polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms BaTiO3 tetragonality and the absence of any low-permittivity interlayer at the interface with Ge. The non-volatile, switchable nature of the single-domain out-of-plane ferroelectric polarization of BaTiO3 is confirmed using piezoelectric force microscopy. The effect of the polarization switching on the conductivity of the underlying Ge is measured using microwave impedance microscopy, clearly demonstrating a ferroelectric field effect.

ContributorsPonath, Patrick (Author) / Fredrickson, Kurt (Author) / Posadas, Agham B. (Author) / Ren, Yuan (Author) / Wu, Xiaoyu (Author) / Vasudevan, Rama K. (Author) / Okatan, M. Baris (Author) / Jesse, S. (Author) / Aoki, Toshihiro (Author) / McCartney, Martha (Author) / Smith, David (Author) / Kalinin, Sergei V. (Author) / Lai, Keji (Author) / Demkov, Alexander A. (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2015-01-01
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Description

The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge1-y Sny i-layers spanning a broad compositional range below and above the crossover Sn concentration yc where the Ge1-y Sny alloy becomes a direct-gap material. These results are made possible by an optimized device

The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge1-y Sny i-layers spanning a broad compositional range below and above the crossover Sn concentration yc where the Ge1-y Sny alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

ContributorsGallagher, J. D. (Author) / Senaratne, Charutha Lasitha (Author) / Sims, Patrick (Author) / Aoki, Toshihiro (Author) / Menéndez, Jose (Author) / Kouvetakis, John (Author) / College of Liberal Arts and Sciences (Contributor)
Created2015-03-02
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Description

Persistent currents (PCs), one of the most intriguing manifestations of the Aharonov-Bohm (AB) effect, are known to vanish for Schrödinger particles in the presence of random scatterings, e.g., due to classical chaos. But would this still be the case for Dirac fermions? Addressing this question is of significant value due

Persistent currents (PCs), one of the most intriguing manifestations of the Aharonov-Bohm (AB) effect, are known to vanish for Schrödinger particles in the presence of random scatterings, e.g., due to classical chaos. But would this still be the case for Dirac fermions? Addressing this question is of significant value due to the tremendous recent interest in two-dimensional Dirac materials. We investigate relativistic quantum AB rings threaded by a magnetic flux and find that PCs are extremely robust. Even for highly asymmetric rings that host fully developed classical chaos, the amplitudes of PCs are of the same order of magnitude as those for integrable rings, henceforth the term superpersistent currents (SPCs). A striking finding is that the SPCs can be attributed to a robust type of relativistic quantum states, i.e., Dirac whispering gallery modes (WGMs) that carry large angular momenta and travel along the boundaries. We propose an experimental scheme using topological insulators to observe and characterize Dirac WGMs and SPCs, and speculate that these features can potentially be the base for a new class of relativistic qubit systems. Our discovery of WGMs in relativistic quantum systems is remarkable because, although WGMs are common in photonic systems, they are relatively rare in electronic systems.

ContributorsXu, Hongya (Author) / Huang, Liang (Author) / Lai, Ying-Cheng (Author) / Grebogi, Celso (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2015-03-11
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Description

The phenomenon of Fano resonance is ubiquitous in a large variety of wave scattering systems, where the resonance profile is typically asymmetric. Whether the parameter characterizing the asymmetry should be complex or real is an issue of great experimental interest. Using coherent quantum transport as a paradigm and taking into

The phenomenon of Fano resonance is ubiquitous in a large variety of wave scattering systems, where the resonance profile is typically asymmetric. Whether the parameter characterizing the asymmetry should be complex or real is an issue of great experimental interest. Using coherent quantum transport as a paradigm and taking into account of the collective contribution from all available scattering channels, we derive a universal formula for the Fano-resonance profile. We show that our formula bridges naturally the traditional Fano formulas with complex and real asymmetry parameters, indicating that the two types of formulas are fundamentally equivalent (except for an offset). The connection also reveals a clear footprint for the conductance resonance during a dephasing process. Therefore, the emergence of complex asymmetric parameter when fitting with experimental data needs to be properly interpreted. Furthermore, we have provided a theory for the width of the resonance, which relates explicitly the width to the degree of localization of the close-by eigenstates and the corresponding coupling matrices or the self-energies caused by the leads. Our work not only resolves the issue about the nature of the asymmetry parameter, but also provides deeper physical insights into the origin of Fano resonance. Since the only assumption in our treatment is that the transport can be described by the Green’s function formalism, our results are also valid for broad disciplines including scattering problems of electromagnetic waves, acoustics, and seismology.

ContributorsHuang, Liang (Author) / Lai, Ying-Cheng (Author) / Luo, Hong-Gang (Author) / Grebogi, Celso (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2015-01-01
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Description

Most previous works on complete synchronization of chaotic oscillators focused on the one-channel interaction scheme where the oscillators are coupled through only one variable or a symmetric set of variables. Using the standard framework of master-stability function (MSF), we investigate the emergence of complex synchronization behaviors under all possible configurations

Most previous works on complete synchronization of chaotic oscillators focused on the one-channel interaction scheme where the oscillators are coupled through only one variable or a symmetric set of variables. Using the standard framework of master-stability function (MSF), we investigate the emergence of complex synchronization behaviors under all possible configurations of two-channel coupling, which include, for example, all possible cross coupling schemes among the dynamical variables. Utilizing the classic Rössler and Lorenz oscillators, we find a rich variety of synchronization phenomena not present in any previously extensively studied, single-channel coupling configurations. For example, in many cases two coupling channels can enhance or even generate synchronization where there is only weak or no synchronization under only one coupling channel, which has been verified in a coupled neuron system. There are also cases where the oscillators are originally synchronized under one coupling channel, but an additional synchronizable coupling channel can, however, destroy synchronization. Direct numerical simulations of actual synchronization dynamics verify the MSF-based predictions. Our extensive computation and heuristic analysis provide an atlas for synchronization of chaotic oscillators coupled through two channels, which can be used as a systematic reference to facilitate further research in this area.

ContributorsYang, Wenchao (Author) / Huang, Zi-Gang (Author) / Wang, Xingang (Author) / Huang, Liang (Author) / Yang, Lei (Author) / Lai, Ying-Cheng (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2015-02-18
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Description

Nonhyperbolicity, as characterized by the coexistence of Kolmogorov-Arnold-Moser (KAM) tori and chaos in the phase space, is generic in classical Hamiltonian systems. An open but fundamental question in physics concerns the relativistic quantum manifestations of nonhyperbolic dynamics. We choose the mushroom billiard that has been mathematically proven to be nonhyperbolic,

Nonhyperbolicity, as characterized by the coexistence of Kolmogorov-Arnold-Moser (KAM) tori and chaos in the phase space, is generic in classical Hamiltonian systems. An open but fundamental question in physics concerns the relativistic quantum manifestations of nonhyperbolic dynamics. We choose the mushroom billiard that has been mathematically proven to be nonhyperbolic, and study the resonant tunneling dynamics of a massless Dirac fermion. We find that the tunneling rate as a function of the energy exhibits a striking "clustering" phenomenon, where the majority of the values of the rate concentrate on a narrow region, as a result of the chaos component in the classical phase space. Relatively few values of the tunneling rate, however, spread outside the clustering region due to the integrable component. Resonant tunneling of electrons in nonhyperbolic chaotic graphene systems exhibits a similar behavior. To understand these numerical results, we develop a theoretical framework by combining analytic solutions of the Dirac equation in certain integrable domains and physical intuitions gained from current understanding of the quantum manifestations of chaos. In particular, we employ a theoretical formalism based on the concept of self-energies to calculate the tunneling rate and analytically solve the Dirac equation in one dimension as well as in two dimensions for a circular-ring-type of tunneling systems exhibiting integrable dynamics in the classical limit. Because relatively few and distinct classical periodic orbits are present in the integrable component, the corresponding relativistic quantum states can have drastically different behaviors, leading to a wide spread in the values of the tunneling rate in the energy-rate plane. In contrast, the chaotic component has embedded within itself an infinite number of unstable periodic orbits, which provide far more quantum states for tunneling. Due to the nature of chaos, these states are characteristically similar, leading to clustering of the values of the tunneling rate in a narrow band. The appealing characteristic of our work is a demonstration and physical understanding of the "mixed" role played by chaos and regular dynamics in shaping relativistic quantum tunneling dynamics.

ContributorsNi, Xuan (Author) / Huang, Liang (Author) / Ying, Lei (Author) / Lai, Ying-Cheng (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2013-09-18
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Description

Unidirectional glass fiber reinforced polymer (GFRP) is tested at four initial strain rates (25, 50, 100 and 200 s-1) and six temperatures (−25, 0, 25, 50, 75 and 100 °C) on a servo-hydraulic high-rate testing system to investigate any possible effects on their mechanical properties and failure patterns. Meanwhile, for

Unidirectional glass fiber reinforced polymer (GFRP) is tested at four initial strain rates (25, 50, 100 and 200 s-1) and six temperatures (−25, 0, 25, 50, 75 and 100 °C) on a servo-hydraulic high-rate testing system to investigate any possible effects on their mechanical properties and failure patterns. Meanwhile, for the sake of illuminating strain rate and temperature effect mechanisms, glass yarn samples were complementally tested at four different strain rates (40, 80, 120 and 160 s-1) and varying temperatures (25, 50, 75 and 100 °C) utilizing an Instron drop-weight impact system. In addition, quasi-static properties of GFRP and glass yarn are supplemented as references. The stress–strain responses at varying strain rates and elevated temperatures are discussed. A Weibull statistics model is used to quantify the degree of variability in tensile strength and to obtain Weibull parameters for engineering applications.

ContributorsOu, Yunfu (Author) / Zhu, Deju (Author) / Zhang, Huaian (Author) / Huang, Liang (Author) / Yao, Yiming (Author) / Li, Gaosheng (Author) / Mobasher, Barzin (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2016-05-19
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Description

The compositional dependence of the lowest direct and indirect band gaps in Ge1-ySny alloys has been determined from room-temperature photoluminescence measurements. This technique is particularly attractive for a comparison of the two transitions because distinct features in the spectra can be associated with the direct and indirect gaps. However, detailed

The compositional dependence of the lowest direct and indirect band gaps in Ge1-ySny alloys has been determined from room-temperature photoluminescence measurements. This technique is particularly attractive for a comparison of the two transitions because distinct features in the spectra can be associated with the direct and indirect gaps. However, detailed modeling of these room temperature spectra is required to extract the band gap values with the high accuracy required to determine the Sn concentration yc at which the alloy becomes a direct gap semiconductor. For the direct gap, this is accomplished using a microscopic model that allows the determination of direct gap energies with meV accuracy. For the indirect gap, it is shown that current theoretical models are inadequate to describe the emission properties of systems with close indirect and direct transitions. Accordingly, an ad hoc procedure is used to extract the indirect gap energies from the data. For y < 0.1 the resulting direct gap compositional dependence is given by ΔE0 = −(3.57 ± 0.06)y (in eV). For the indirect gap, the corresponding expression is ΔEind = −(1.64 ± 0.10)y (in eV). If a quadratic function of composition is used to express the two transition energies over the entire compositional range 0 ≤ y ≤ 1, the quadratic (bowing) coefficients are found to be b0 = 2.46 ± 0.06 eV (for E0) and bind = 1.03 ± 0.11 eV (for Eind). These results imply a crossover concentration yc = $0.073 [+0.007 over -0.006], much lower than early theoretical predictions based on the virtual crystal approximation, but in better agreement with predictions based on large atomic supercells.

ContributorsJiang, L. (Author) / Gallagher, J. D. (Author) / Senaratne, Charutha Lasitha (Author) / Aoki, Toshihiro (Author) / Mathews, J. (Author) / Kouvetakis, John (Author) / Menéndez, Jose (Author) / College of Liberal Arts and Sciences (Contributor)
Created2014-11-01
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Description

We develop a framework to uncover and analyse dynamical anomalies from massive, nonlinear and non-stationary time series data. The framework consists of three steps: preprocessing of massive datasets to eliminate erroneous data segments, application of the empirical mode decomposition and Hilbert transform paradigm to obtain the fundamental components embedded in

We develop a framework to uncover and analyse dynamical anomalies from massive, nonlinear and non-stationary time series data. The framework consists of three steps: preprocessing of massive datasets to eliminate erroneous data segments, application of the empirical mode decomposition and Hilbert transform paradigm to obtain the fundamental components embedded in the time series at distinct time scales, and statistical/scaling analysis of the components. As a case study, we apply our framework to detecting and characterizing high-frequency oscillations (HFOs) from a big database of rat electroencephalogram recordings. We find a striking phenomenon: HFOs exhibit on–off intermittency that can be quantified by algebraic scaling laws. Our framework can be generalized to big data-related problems in other fields such as large-scale sensor data and seismic data analysis.

ContributorsHuang, Liang (Author) / Ni, Xuan (Author) / Ditto, William L. (Author) / Spano, Mark (Author) / Carney, Paul R. (Author) / Lai, Ying-Cheng (Author) / Ira A. Fulton Schools of Engineering (Contributor)
Created2017-01-18