ASU Scholarship Showcase

Novel hydride chemistries are employed to deposit light-emitting Ge_1-y Sn_yalloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ≤ 0.06, the CVD precursors used were digermane Ge₂H₆ and deuterated stannane SnD₄. For y ≥ 0.06, the Ge precursor was changed to trigermane Ge₃H₈, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge₄H₁₀ as the Ge source. The photoluminescence intensity from Ge_1-y Sn_y /Ge films is expected to increase relative to Ge_1-y Sn_y /Si due to the less defected interface with the virtual substrate. However, while Ge_1-y Sn_y /Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge_1-y Sn_y /Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge_1-y Sn_y /Ge makes it possible to approach film thicknesses of about 1  μm, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge_1-y Sn_y /Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si_1-x Ge_x /Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge_1-y Sn_y i-layers spanning a broad compositional range below and above the crossover Sn concentration y_c where the Ge_1-y Sn_y alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

The development of non-volatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching and measurable semiconductor modulation. Here we report a true ferroelectric field effect—carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in epitaxial c-axis-oriented BaTiO₃ grown by molecular beam epitaxy. Using the density functional theory, we demonstrate that switching of BaTiO₃ polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms BaTiO₃ tetragonality and the absence of any low-permittivity interlayer at the interface with Ge. The non-volatile, switchable nature of the single-domain out-of-plane ferroelectric polarization of BaTiO₃ is confirmed using piezoelectric force microscopy. The effect of the polarization switching on the conductivity of the underlying Ge is measured using microwave impedance microscopy, clearly demonstrating a ferroelectric field effect.

The compositional dependence of the lowest direct and indirect band gaps in Ge_1-ySn_y alloys has been determined from room-temperature photoluminescence measurements. This technique is particularly attractive for a comparison of the two transitions because distinct features in the spectra can be associated with the direct and indirect gaps. However, detailed modeling of these room temperature spectra is required to extract the band gap values with the high accuracy required to determine the Sn concentration y_c at which the alloy becomes a direct gap semiconductor. For the direct gap, this is accomplished using a microscopic model that allows the determination of direct gap energies with meV accuracy. For the indirect gap, it is shown that current theoretical models are inadequate to describe the emission properties of systems with close indirect and direct transitions. Accordingly, an ad hoc procedure is used to extract the indirect gap energies from the data. For y < 0.1 the resulting direct gap compositional dependence is given by ΔE₀ = −(3.57 ± 0.06)y (in eV). For the indirect gap, the corresponding expression is ΔE_ind = −(1.64 ± 0.10)y (in eV). If a quadratic function of composition is used to express the two transition energies over the entire compositional range 0 ≤ y ≤ 1, the quadratic (bowing) coefficients are found to be b₀ = 2.46 ± 0.06 eV (for E0) and b_ind = 1.03 ± 0.11 eV (for E_ind). These results imply a crossover concentration y_c = $0.073 [+0.007 over -0.006], much lower than early theoretical predictions based on the virtual crystal approximation, but in better agreement with predictions based on large atomic supercells.

The Ni/NiO core/shell structure is one of the most efficient co-catalysts for solar water splitting when coupled with suitable semiconducting oxides. It has been shown that pretreated Ni/NiO core/shell structures are more active than pure Ni metal, pure NiO or mixed dispersion of Ni metal and NiO nanoparticles. However, Ni/NiO core/shell structures on TiO2 are only able to generate H2 but not O2 in aqueous water. The nature of the hydrogen evolution reaction in these systems was investigated by correlating photochemical H2 production with atomic resolution structure determined with aberration corrected electron microscopy. It was found that the core/shell structure plays an important role for H2 generation but the system undergoes deactivation due to a loss of metallic Ni. During the H2 evolution reaction, the metal core initially formed partial voids which grew and eventually all the Ni diffused out of the core-shell into solution leaving an inactive hollow NiO void structure. The H2 evolution was generated by a photochemical reaction involving photocorrosion of Ni metal.

To date, little research has been performed regarding the planning and management of “small” projects – those projects typically differentiated from “large” projects due to having lower costs. In 2013, The Construction Industry Institute (CII) set out to develop a front end planning tool that will provide practitioners with a standardized process for planning small projects in the industrial sector. The research team determined that data should be sought from industry regarding small industrial projects to ensure applicability, effectiveness and validity of the new tool. The team developed and administered a survey to determine (1) the prevalence of small projects, (2) the planning processes currently in use for small projects, and (3) current metrics used by industry to differentiate between small and large projects. The survey data showed that small projects make up a majority of projects completed in the industrial sector, planning of these projects varies greatly across the industry, and the metrics posed in the survey were mostly not appropriate for use in differentiating between small and large projects. This study contributes to knowledge through adding to the limited research surrounding small projects, and suggesting future research regarding using measures of project complexity to differentiate between small and large projects.

For the past three decades, the Saudi construction industry (SCI) has exhibited poor performance. Many research efforts have tried to identify the problem and the potential causes but there have been few publications identifying ways to mitigate the problem and describing testing to validate the proposed solution. This paper examines the research and development (R&D) approach in the SCI. A literature research was performed identifying the impact that R&D has had on the SCI. A questionnaire was also created for surveying industry professionals and researchers. The results show evidence that the SCI practice and the academic research work exist in separate silos. This study recommends a change of mindset in both the public and private sector on their views on R&D since cooperation is required to create collaboration between the two sectors and improve the competitiveness of the country's economy.

The principles of a new project management model have been tested for the past 20 years. This project management model utilizes expertise instead of the traditional management, direction, and control (MDC). This new project management model is a leadership-based model instead of a management model. The practice of the new model requires a change in paradigm and project management structure. Some of the practices of this new paradigm include minimizing the flow of information and communications to and from the project manager [including meetings, emails and documents], eliminating technical communications, reducing client management, direction, and control of the vendor, and the hiring of vendors or personnel to do specific tasks. A vendors is hired only after they have clearly shown that they know what they are doing by showing past performance on similar projects, that they clearly understand how to create transparency to minimize risk that they do not control, and that they can clearly outline their project plan using a detailed milestone schedule including time, cost, and tasks all communicated in the language of metrics.

Load associated fatigue cracking is one of the major distress types occurring in flexible pavements. Flexural bending beam fatigue laboratory test has been used for several decades and is considered an integral part of the Superpave advanced characterization procedure. One of the most significant solutions to sustain the fatigue life for an asphaltic mixture is to add sustainable materials such as rubber or polymers to the asphalt mixture. A laboratory testing program was performed on three gap-graded mixtures: unmodified, Asphalt Rubber (AR) and polymer-modified. Strain controlled fatigue tests were conducted according to the AASHTO T321 procedure. The results from the beam fatigue tests indicated that the AR and polymer-modified gap graded mixtures would have much longer fatigue lives compared to the reference (unmodified) mixture. In addition, a mechanistic analysis using 3D-Move software coupled with a cost-effectiveness analysis study based on the fatigue performance on the three mixtures were performed. Overall, the analysis showed that the AR and polymer-modified asphalt mixtures exhibited significantly higher cost-effectiveness compared to unmodified HMA mixture. Although AR and polymer-modification increases the cost of the material, the analysis showed that they are more cost effective than the unmodified mixture.

As gesture interfaces become more main-stream, it is increasingly important to investigate the behavioral characteristics of these interactions – particularly in three-dimensional (3D) space. In this study, Fitts’ method was extended to such input technologies, and the applicability of Fitts’ law to gesture-based interactions was examined. The experiment included three gesture-based input devices that utilize different techniques to capture user movement, and compared them to conventional input technologies like touchscreen and mouse. Participants completed a target-acquisition test and were instructed to move a cursor from a home location to a spherical target as quickly and accurately as possible. Three distances and three target sizes were tested six times in a randomized order for all input devices. A total of 81 participants completed all tasks. Movement time, error rate, and throughput were calculated for each input technology. Results showed that the mean movement time was highly correlated with the target's index of difficulty for all devices, providing evidence that Fitts’ law can be extended and applied to gesture-based devices. Throughputs were found to be significantly lower for the gesture-based devices compared to mouse and touchscreen, and as the index of difficulty increased, the movement time increased significantly more for these gesture technologies. Error counts were statistically higher for all gesture-based input technologies compared to mouse. In addition, error counts for all inputs were highly correlated with target width, but little impact was shown by movement distance. Overall, the findings suggest that gesture-based devices can be characterized by Fitts’ law in a similar fashion to conventional 1D or 2D devices.