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Description
In the current photovoltaic (PV) industry, the O&M (operations and maintenance) personnel in the field primarily utilize three approaches to identify the underperforming or defective modules in a string: i) EL (electroluminescence) imaging of all the modules in the string; ii) IR (infrared) thermal imaging of all the modules in the string; and, iii) current-voltage (I-V) curve tracing of all the modules in the string. In the first and second approaches, the EL images are used to detect the modules with broken cells, and the IR images are used to detect the modules with hotspot cells, respectively. These two methods may identify the modules with defective cells only semi-qualitatively, but not accurately and quantitatively. The third method, I-V curve tracing, is a quantitative method to identify the underperforming modules in a string, but it is an extremely time consuming, labor-intensive, and highly ambient conditions dependent method. Since the I-V curves of individual modules in a string are obtained by disconnecting them individually at different irradiance levels, module operating temperatures, angle of incidences (AOI) and air-masses/spectra, all these measured curves are required to be translated to a single reporting condition (SRC) of a single irradiance, single temperature, single AOI and single spectrum. These translations are not only time consuming but are also prone to inaccuracy due to inherent issues in the translation models. Therefore, the current challenges in using the traditional I-V tracers are related to: i) obtaining I-V curves simultaneously of all the modules and substrings in a string at a single irradiance, operating temperature, irradiance spectrum and angle of incidence due to changing weather parameters and sun positions during the measurements, ii) safety of field personnel when disconnecting and reconnecting of cables in high voltage systems (especially field aged connectors), and iii) enormous time and hardship for the test personnel in harsh outdoor climatic conditions. In this thesis work, a non-contact I-V (NCIV) curve tracing tool has been integrated and implemented to address the above mentioned three challenges of the traditional I-V tracers.
This work compares I-V curves obtained using a traditional I-V curve tracer with the I-V curves obtained using a NCIV curve tracer for the string, substring and individual modules of crystalline silicon (c-Si) and cadmium telluride (CdTe) technologies. The NCIV curve tracer equipment used in this study was integrated using three commercially available components: non-contact voltmeters (NCV) with voltage probes to measure the voltages of substrings/modules in a string, a hall sensor to measure the string current and a DAS (data acquisition system) for simultaneous collection of the voltage data obtained from the NCVs and the current data obtained from the hall sensor. This study demonstrates the concept and accuracy of the NCIV curve tracer by comparing the I-V curves obtained using a traditional capacitor-based tracer and the NCIV curve tracer in a three-module string of c-Si modules and of CdTe modules under natural sunlight with uniform light conditions on all the modules in the string and with partially shading one or more of the modules in the string to simulate and quantitatively detect the underperforming module(s) in a string.
This work compares I-V curves obtained using a traditional I-V curve tracer with the I-V curves obtained using a NCIV curve tracer for the string, substring and individual modules of crystalline silicon (c-Si) and cadmium telluride (CdTe) technologies. The NCIV curve tracer equipment used in this study was integrated using three commercially available components: non-contact voltmeters (NCV) with voltage probes to measure the voltages of substrings/modules in a string, a hall sensor to measure the string current and a DAS (data acquisition system) for simultaneous collection of the voltage data obtained from the NCVs and the current data obtained from the hall sensor. This study demonstrates the concept and accuracy of the NCIV curve tracer by comparing the I-V curves obtained using a traditional capacitor-based tracer and the NCIV curve tracer in a three-module string of c-Si modules and of CdTe modules under natural sunlight with uniform light conditions on all the modules in the string and with partially shading one or more of the modules in the string to simulate and quantitatively detect the underperforming module(s) in a string.
ContributorsMurali, Sanjay (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Srinivasan, Devarajan (Committee member) / Rogers, Bradley (Committee member) / Arizona State University (Publisher)
Created2020