Matching Items (40)
Description
Silicon solar cells with heterojunction carrier collectors based on a-Si/c-Si heterojunction (SHJ) have a potential to overcome the limitations of the conventional diffused junction solar cells and become the next industry standard manufacturing technology of solar cells. A brand feature of SHJ technology is ultrapassivated surfaces with already demonstrated 750 mV open circuit voltages (Voc) and 24.7% efficiency on large area solar cell. Despite very good results achieved in research and development, large volume manufacturing of high efficiency SHJ cells remains a fundamental challenge. The main objectives of this work were to develop a SHJ solar cell fabrication flow using industry compatible tools and processes in a pilot production environment, study the interactions between the used fabrication steps, identify the minimum set of optimization parameters and characterization techniques needed to achieve 20% baseline efficiency, and analyze the losses of power in fabricated SHJ cells by numerical and analytical modeling. This manuscript presents a detailed description of a SHJ solar cell fabrication flow developed at ASU Solar Power Laboratory (SPL) which allows large area solar cells with >750 mV Voc. SHJ cells on 135 um thick 153 cm2 area wafers with 19.5% efficiency were fabricated. Passivation quality of (i)a-Si:H film, bulk conductivity of doped a-Si films, bulk conductivity of ITO, transmission of ITO and the thickness of all films were identified as the minimum set of optimization parameters necessary to set up a baseline high efficiency SHJ fabrication flow. The preparation of randomly textured wafers to minimize the concentration of surface impurities and to avoid epitaxial growth of a-Si films was found to be a key challenge in achieving a repeatable and uniform passivation. This work resolved this issue by using a multi-step cleaning process based on sequential oxidation in nitric/acetic acids, Piranha and RCA-b solutions. The developed process allowed state of the art surface passivation with perfect repeatability and negligible reflectance losses. Two additional studies demonstrated 750 mV local Voc on 50 micron thick SHJ solar cell and < 1 cm/s effective surface recombination velocity on n-type wafers passivated by a-Si/SiO2/SiNx stack.
ContributorsHerasimenka, Stanislau Yur'yevich (Author) / Honsberg, C. (Christiana B.) (Thesis advisor) / Bowden, Stuart G (Thesis advisor) / Tracy, Clarence (Committee member) / Vasileska, Dragica (Committee member) / Holman, Zachary (Committee member) / Sinton, Ron (Committee member) / Arizona State University (Publisher)
Created2013
Description
Proposed and tested were three different methods to deposit important layers of Silicon heterojunction solar cells (SHJs). If there were a shortage of Silver, Aluminum could be substituted for the contacts. If there were a shortage of Indium, Yttrium Zinc Oxide could be substituted. To improve the solar cell, the p and n type layers can be grown with hydrogenated nanocrystallline Silicon (nc-Si:H). 40% and 50% nc-Si:H has shown a maximum absorbance reduction of 5 times compared to hydrogenated amorphous Silicon (a-Si). The substitutions offer alternatives which increase the total possible amount of solar cell production, advancing toward completion of the Terrawatt challenge.
ContributorsCarpenter, Joe Victor (Author) / Alford, Terry (Thesis director) / Holman, Zachary (Committee member) / Barrett, The Honors College (Contributor) / Chemical Engineering Program (Contributor) / Materials Science and Engineering Program (Contributor)
Created2014-05
Description
The purpose of this research is to optically characterize germanium-based chalcogenide thin films and evaluate how their properties change when the composition is altered. The composition changes based on if the chalcogenide contains selenium or sulfur, if the film is 60 nanometers or 200 nanometers, and if the film is doped with silver (ranging from 0 nanometers to 30 nanometers). These amorphous germanium-chalcogenide thin films exhibit interesting properties when doped with silver, such as transporting ions within the film in addition to electron transport. Using optical characterization techniques such as UV-Vis spectroscopy, profilometry, and ellipsometry, parameters that describe the optical characteristics are found, including the absorption coefficient, refractive index, optical band gap energy, and information on the density of states. This research concludes that as silver content within the film increases, the optical bandgap energy decreases—this is a consistent trend in existing literature. Having a better understanding of the materials’ physical properties will be useful to aid in the creation of microsystems based on these materials by selecting optimal composition and growth conditions. Important applications using these materials are currently being researched, including variable capacitor devices relying on the ionic conductor behavior these materials display. The optical properties like the absorption coefficient and the optical bandgap energy are invaluable in designing these applications effectively.
ContributorsRicks, Amberly Frances (Author) / Gonzalez Velo, Yago (Thesis director) / Kozicki, Michael (Committee member) / Holman, Zachary (Committee member) / Electrical Engineering Program (Contributor, Contributor) / Barrett, The Honors College (Contributor)
Created2019-05
Description
The investigation into wide band gap semiconductors for use in tandem solar cells has become an increasingly more researched area with many new absorbers outlining the landscape. Pairing silicon with another cheap wide band gap semiconductor absorber can generate more efficient solar cell, which could continue to drive up the energy output from solar. One such recently researched wide band gap absorber is ZnSnN2. ZnSnN2 proves too difficult to form under most conditions, but has the necessary band gap to make it a potential earth abundant solar absorber. The deposition process for ZnSnN2 is usually conducted with Zn and Sn metal targets while flowing N2 gas. Due to restrictions with chamber depositions, instead ZnO and SnO2 targets were sputtered with N2 gas to attempt to form separate zinc and tin oxynitrides as an initial single target study prior to future combinatorial studies. The electrical and optical properties and crystal structure of these thin films were analyzed to determine the nitrogen incorporation in the thin films through X-ray diffraction, UV-Vis spectrophotometry, and 4-point probe measurements. The SnO2 thin films showed a clear response in the absorption coefficient leading but showed no observable XRD peak shift. Thus, it is unlikely that substantial amounts of nitrogen were incorporated into SnO¬2. ZnO showed a clear response increase in conductivity with N2 with an additional shift in the XRD peak at 300 °C and potential secondary phase peak. Nitrogen incorporation was achieved with fair amounts of certainty for the ZnO thin films.
ContributorsTheut, Nicholas C (Author) / Bertoni, Mariana (Thesis director) / Holman, Zachary (Committee member) / Materials Science and Engineering Program (Contributor) / Chemical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2019-05
Description
Aerogels are among the best known thermally insulating materials due their high porosities (>90%). This, in conjunction with their high transparency make them ideal candidates for highly insulating window coatings. However, current state of the art techniques involve time-consuming drying steps and poor mechanical robustness, severely limiting their wide-scale adaptation. By using a dry aerosol impaction process, synthesizing nanoparticles in a plasma, upstream of a slit-shaped nozzle and impacting these particles onto a substrate below, a novel way for producing mesoporous silica aerogels is shown. This removes the need for solution-based processing, improving the potential for high throughput. Thick (~100um), 90% mesoporous silica has been characterized showing low effective thermal conductivity (~0.02 W/mK) and high transparency (>90%). The morphology of these coatings were analyzed showing tight pore distributions. Film adhesion and stress have shown themselves to be major hurdles during the development of these coatings and will be the focus of future work.
ContributorsRodkey, Nathan Jacques (Author) / Holman, Zachary (Thesis director) / Bryan, Jonathan (Committee member) / Materials Science and Engineering Program (Contributor) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Balance of System Cost Analysis to Investigate Future Economic Competitiveness of Tandem Solar Cells
Description
As single junction silicon based solar cells approach their Shockley\u2014Queasier (SQ) conversion efficiency limits, tandem solar cells (TSC) provide an attractive prospect for higher efficiency cells. Although TSCs have been shown to be more efficient, their higher fabrication costs are a limiting factor for their economic competitiveness and large-scale integration in PV power systems. Current literature suggests that even with reduced costs of fabrication in the future, TSCs still offer no competitive benefit for integration in utility-scale systems and may yield minimal benefits only in places where area-related costs are high. This work investigates Balance of Systems (BoS) circumstances under which TSCs can attain economic viability in scenarios where the necessary technological advances are made to increase the efficiency of solar cells beyond the SQ limit.
ContributorsMugwisi, Ngoni (Author) / Holman, Zachary (Thesis director) / Phelan, Patrick (Committee member) / Industrial, Systems (Contributor) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2017-05
Description
To compete with fossil fuel electricity generation, there is a need for higher efficiency solar cells to produce renewable energy. Currently, this is the best way to lower generation costs and the price of energy [1]. The goal of this Barrett Honors Thesis is to design an optical coating model that has five or fewer layers (with varying thickness and refractive index, within the above range) and that has the maximum reflectance possible between 950 and 1200 nanometers for normally incident light. Manipulating silicon monolayers to become efficient inversion layers to use in solar cells aligns with the Ira. A Fulton Schools of Engineering research themes of energy and sustainability [2]. Silicon monolayers could be specifically designed for different doping substrates. These substrates could range from common-used materials such as boron and phosphorus, to rare-earth doped zinc oxides or even fullerene blends. Exploring how the doping material, and in what quantity, affects solar cell energy output could revolutionize the current production methods and commercial market. If solar cells can be manufactured more economically, yet still retain high efficiency rates, then more people will have access to alternate, "green" energy that does not deplete nonrenewable resources.
ContributorsSanford, Kari Paige (Author) / Holman, Zachary (Thesis director) / Weigand, William (Committee member) / Industrial, Systems (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12
Description
In this dissertation, far UV spectroscopy is applied to investigate the optical properties of dielectric thin films grown by atomic layer deposition. The far UV (120 – 200 nm) reflectance for several dielectric oxides and fluorides, including AlF3, Al2O3, Ga2O3, HfO2, and SiO2, was measured at variable angles and thicknesses. Multiple optical calculation methods were developed for the accurate determination of the optical constants from the reflectance. The deduced optical constants were used for optical designs, such as high-reflectivity coatings, and Fabry-Perot bandpass interference filters. Three filters were designed for use at 157 nm, 212 nm, and 248 nm wavelengths, based on multilayer structures consisting of SiO2, Al2O3, HfO2, and AlF3. A thorough error analysis was made to quantify the non-idealities of the optical performance for the designed filters. Far UV spectroscopy was also applied to analyze material mixtures, such as AlF3/Al and h-BN/c-BN mixtures. Using far UV spectroscopy, different phases in the composite can be distinguished, and the volume concentration of each constituent can be determined. A middle UV reflective coating based on A2O3 and AlF3 was fabricated and characterized. The reflective coating has a smooth surface (?? < 1 nm), and a peak reflectance of 25 – 30 % at a wavelength of 196 nm. The peak reflectance deviated from the design, and an analysis of the AlF3 layer prepared by plasma-enhanced atomic layer deposition (PEALD) indicated the presence of Al-rich clusters, which were associated with the UV absorption. Complementary techniques, such as spectroscopic ellipsometry, and X-ray photoelectron spectroscopy, were used to verify the results from far UV spectroscopy. In conclusion, this Dissertation demonstrated the use of in-situ far UV spectroscopy to investigate the optical properties of thin films at short wavelengths. This work extends the application of far UV spectroscopy to ultrawide bandgap semiconductors and insulators. This work supports a path forward for far UV optical filters and devices. Various errors have been discussed with solutions proposed for future research of methods and materials for UV optics.
ContributorsHuang, Zhiyu (Author) / Nemanich, Robert (Thesis advisor) / Ponce, Fernando (Committee member) / Menéndez, Jose (Committee member) / Holman, Zachary (Committee member) / Arizona State University (Publisher)
Created2021
Description
CdTe/MgCdTe double heterostructures (DHs) integrated with a heavily-doped a-Si:H layer as the hole contact was demonstrated a record open-circuit voltage (VOC) of 1.11 V and an active-area efficiency of 20% in 2016. Despite this significant progress, some of the underlying device physics has not been fully understood. The first part of this dissertation reports a systematic study of the CdTe/MgCdTe DH devices. The CdTe/MgCdTe DHs are grown on InSb(001) substrates. The vertical transport mechanisms across the CdTe and InSb heterovalent interface are investigated with N-CdTe/n-InSb and N-CdTe/p-InSb heterostructures. A transport model including tunneling through CdTe barrier and InSb interband transition is developed to explain the different temperature dependent current-voltage characteristics of these two heterostructures.
Different p-type layers are integrated with the CdTe/MgCdTe DHs to form solar cells with different VOC values and efficiencies. The low VOC of devices with ZnTe:Cu and ZnTe:As hole contacts is attributed to the low built-in voltage and reduced minority carrier lifetime in the CdTe absorber, respectively. The critical requirements for reaching high VOC values are analyzed.
A novel epitaxial lift-off technology for monocrystalline CdTe is developed using a water-soluble and nearly lattice-matched MgTe sacrificial layer grown on InSb substrate. The freestanding CdTe/MgCdTe DH thin films obtained from the lift-off process show improved optical performance due to enhanced light extraction efficiency and photo-recycling effect. This technology enables the possible development of monocrystalline CdTe thin-film solar cells and 1.7/1.1-eV MgCdTe/Si or MgCdTe/Cu(InGa)Se2 tandem solar cells. The monocrystalline CdTe thin-film solar cells and 1.7-eV MgCdTe DH solar cells have been demonstrated with a power conversion efficiency of 9.8% and an active-area efficiency as high as 15.2%, respectively. Additionally, a study of the radiation effects on CdTe DHs under 68-MeV proton irradiation is performed and showed their superior radiation tolerance. All these findings indicate that the monocrystalline CdTe thin-film solar cells are reasonably expected to have low weight, high-efficiency and high power density, ideal for space applications.
ContributorsDing, Jia (Author) / Zhang, Yong-Hang (Thesis advisor) / Vasileska, Dragica (Committee member) / Johnson, Shane (Committee member) / Holman, Zachary (Committee member) / Arizona State University (Publisher)
Created2021
Description
Cubic boron nitride (c-BN), hexagonal boron nitride (h-BN), and semiconducting diamond all have physical properties that make them ideal materials for applications in high power and high frequency electronics, as well as radiation detectors. However, there is limited research on the unique properties and growth of c-BN or h-BN thin films. This dissertation addresses the deposition of c-BN via plasma enhanced chemical vapor deposition (PECVD) on boron doped diamond substrates. In-Situ X-ray photoelectron spectroscopy (XPS) is used to characterize the thickness and hexagonal to cubic ratio of boron nitride thin films. The effects of hydrogen concentration during the deposition of boron nitride are investigated. The boron nitride deposition rate is found to be dependent on the hydrogen gas flow. The sp2 to sp3 bonding is also found to be dependent on the hydrogen gas flow. Preferential growth of h-BN is observed when an excess of hydrogen is supplied to the reaction, while h-BN growth is suppressed when hydrogen flow is reduced to be the limiting reactant. Reduced hydrogen flow is also observed to promote preferential growth of c-BN.
The hydrogen limited reaction is used to deposit c-BN on single crystal (100) boron-doped diamond substrates. In-situ ultra-violet photoelectron spectroscopy (UPS) and XPS are used to deduce the valence band offset of the diamond/c-BN interface. A valence band offset of -0.3 eV is measured with the diamond VBM above the VBM of c-BN. This value is then discussed in context of previous experimental results and theoretical calculations.
Finally, UPS and XPS are used to characterize the surface states of phosphorus-doped diamond. Variations within the processing parameters for surface preparation and the effects on the electronic surface states are presented and discussed.
ContributorsBrown, Jesse (Author) / Nemanich, Robert J (Thesis advisor) / Alarcon, Ricardo (Committee member) / Lindsay, Stuart (Committee member) / Zaniewski, Anna (Committee member) / Arizona State University (Publisher)
Created2021