Matching Items (25)
Description
As existing solar cell technologies come closer to their theoretical efficiency, new concepts that overcome the Shockley-Queisser limit and exceed 50% efficiency need to be explored. New materials systems are often investigated to achieve this, but the use of existing solar cell materials in advanced concept approaches is compelling for multiple theoretical and practical reasons. In order to include advanced concept approaches into existing materials, nanostructures are used as they alter the physical properties of these materials. To explore advanced nanostructured concepts with existing materials such as III-V alloys, silicon and/or silicon/germanium and associated alloys, fundamental aspects of using these materials in advanced concept nanostructured solar cells must be understood. Chief among these is the determination and predication of optimum electronic band structures, including effects such as strain on the band structure, and the material's opto-electronic properties. Nanostructures have a large impact on band structure and electronic properties through quantum confinement. An additional large effect is the change in band structure due to elastic strain caused by lattice mismatch between the barrier and nanostructured (usually self-assembled QDs) materials. To develop a material model for advanced concept solar cells, the band structure is calculated for single as well as vertical array of quantum dots with the realistic effects such as strain, associated with the epitaxial growth of these materials. The results show significant effect of strain in band structure. More importantly, the band diagram of a vertical array of QDs with different spacer layer thickness show significant change in band offsets, especially for heavy and light hole valence bands when the spacer layer thickness is reduced. These results, ultimately, have significance to develop a material model for advance concept solar cells that use the QD nanostructures as absorbing medium. The band structure calculations serve as the basis for multiple other calculations. Chief among these is that the model allows the design of a practical QD advanced concept solar cell, which meets key design criteria such as a negligible valence band offset between the QD/barrier materials and close to optimum band gaps, resulting in the predication of optimum material combinations.
ContributorsDahal, Som Nath (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / Roedel, Ronald (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2011
Description
A primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (~ 80 %). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface.
ContributorsGhosha, Kuṇāla (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Thesis advisor) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2011
Description
As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell surfaces. The focus of this work is to understand the properties of charges present in the SiNx films and then to develop a mechanism to manipulate the polarity of charges to either negative or positive based on the end-application. Specific silicon-nitrogen dangling bonds (·Si-N), known as K center defects, are the primary charge trapping defects present in the SiNx films. A custom built corona charging tool was used to externally inject positive or negative charges in the SiNx film. Detailed Capacitance-Voltage (C-V) measurements taken on corona charged SiNx samples confirmed the presence of a net positive or negative charge density, as high as +/- 8 x 1012 cm-2, present in the SiNx film. High-energy (~ 4.9 eV) UV radiation was used to control and neutralize the charges in the SiNx films. Electron-Spin-Resonance (ESR) technique was used to detect and quantify the density of neutral K0 defects that are paramagnetically active. The density of the neutral K0 defects increased after UV treatment and decreased after high temperature annealing and charging treatments. Etch-back C-V measurements on SiNx films showed that the K centers are spread throughout the bulk of the SiNx film and not just near the SiNx-Si interface. It was also shown that the negative injected charges in the SiNx film were stable and present even after 1 year under indoor room-temperature conditions. Lastly, a stack of SiO2/SiNx dielectric layers applicable to standard commercial solar cells was developed using a low temperature (< 400 °C) PECVD process. Excellent surface passivation on FZ and CZ Si substrates for both n- and p-type samples was achieved by manipulating and controlling the charge in SiNx films.
ContributorsSharma, Vivek (Author) / Bowden, Stuart (Thesis advisor) / Schroder, Dieter (Committee member) / Honsberg, Christiana (Committee member) / Roedel, Ronald (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2013
Description
This research identifies several barriers to large scale implementation of solar photovoltaics into the modern US electricity system, along with solutions to help mitigate these challenges. The need for new technologies and utility rate plans are identified as two of these key barriers. In place of expensive, developing technologies this research explores the use of thermal energy storage (TES), a widely used, inexpensive, mature technology as a potential solution for a portion of this problem. A real-life example from Arizona State University (ASU) is used to illustrate the potential of TES. In addition, shortcomings of modern electricity rate plans are identified using both cost and system characteristics of residential solar and battery systems. This rate and system modeling also gives insight into the value that solar can provide to residential customers in a variety of settings.
ContributorsRouthier, Alexander F (Author) / Honsberg, Christiana (Thesis advisor) / Hedman, Mojdeh (Committee member) / Kurtz, Sarah (Committee member) / Miller, Clark (Committee member) / Arizona State University (Publisher)
Created2022
Description
GaAs thermophotovoltaic (TPV) devices with a patterned dielectric back contact (PDBC) architecture, featuring a dielectric spacer between the semiconductor and back metal contact over most of the back surface for high reflectance, and metal point contacts over a smaller area for electrical conduction were demonstrated. In the TPV application, high sub-bandgap reflectance is needed to reflect unused sub-bandgap photons to the thermal emitter to minimize energy losses in this portion of the thermal spectrum. Different PDBC fabrication processes with SU-8 and SiO2 dielectric spacer layers to maximize sub-bandgap reflectance while minimizing series resistance to increase TPV conversion efficiency was explored. GaAs SU-8 PDBC TPV devices with 2200°C blackbody-weighted sub-bandgap reflectance of 94.9% and 96.5% with and without a front metal grid, respectively were demonstrated. This was 0.7% and 2.3% (absolute) higher than the mean sub-bandgap reflectance of 94.2% for GaAs baseline TPV devices with 100% Au back contact with a front metal grid. Lower sub-bandgap reflectance in TPV devices with front grids indicated the front grid induced light scattering led to additional parasitic absorption in the TPV device. For higher contact coverage fractions, the PDBC reflectance cannot, in general, be treated by linear interpolation of the mirror and point-contact areas using simple 1D transfer matrix method modeling and should be treated instead as a diffraction grating by solving Maxwell's equations in 3D. GaAs PDBC TPV device with series resistance less than 10 mΩ·cm2 was demonstrated. Finally, GaAs PDBC TPV device with 22.8% TPV efficiency measured in a thermophotovoltaic test platform with the thermal emitter at 2100℃ was demonstrated
ContributorsArulanandam, Madhan Kumar (Author) / King, Richard R. (Thesis advisor) / Steiner, Myles A. (Committee member) / Newman, Nathan (Committee member) / Honsberg, Christiana (Committee member) / Arizona State University (Publisher)
Created2022
Description
To keep up with the increasing demand for solar energy, higher efficiencies are necessary while keeping cost at a minimum. The easiest theoretical way to achieve that is using silicon-based multi-junction solar cells. However, there are major challenges in effectively implementing such a system. Much work has been done recently to integrate III-V with Si for multi-junction solar cell purposes. The focus of this paper is to explore GaP-based dilute nitrides as a possible top cell candidate for Si-based multi-junctions. The direct growth of dilute nitrides in a lattice-matched configuration epitaxially in literature is reviewed. The problems associated with such growths are outlined and pathways to mitigate these problems are presented. The need for a GaP buffer layer between the dilute nitride film and Si is established. Defects in GaP/Si system are explored in detail and a study on pit formation during such growth is performed. Effective suppression of pits in GaP surface grown on Si is achieved. Issues facing GaP-based dilute nitrides in terms of material properties are outlined. Review of these challenges is done and some possible future areas of interest to improve material quality are established. Finally, the growth process of dilute nitrides using Molecular Beam Epitaxy tool is explained. Results for GaNP grown on Si pre and post growth treatments are detailed.
ContributorsMurali, Srinath (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / King, Richard (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2022
Description
In this dissertation, the nanofabrication process is characterized for fabrication of nanostructure on surface of silicon and gallium phosphide using silica nanosphere lithography (SNL) and metal assisted chemical etching (MACE) process. The SNL process allows fast process time and well defined silica nanosphere monolayer by spin-coating process after mixing N,N-dimethyl-formamide (DMF) solvent. The MACE process achieves the high aspect ratio structure fabrication using the reaction between metal and wet chemical. The nanostructures are fabricated on Si surface for enhanced light management, but, without proper surface passivation those gains hardly impact the performance of the solar cell. The surface passivation of nanostructures is challenging, not only due to larger surface areas and aspect ratios, but also has a direct result of the nanofabrication processes. In this research, the surface passivation of silicon nanostructures is improved by modifying the silica nanosphere lithography (SNL) and the metal assisted chemical etching (MACE) processes, frequently used to fabricate nanostructures. The implementation of a protective silicon oxide layer is proposed prior to the lithography process to mitigate the impact of the plasma etching during the SNL. Additionally, several adhesion layers are studied, chromium (Cr), nickel (Ni) and titanium (Ti) with gold (Au), used in the MACE process. The metal contamination is one of main damage and Ti makes the mitigation of metal contamination. Finally, a new chemical etching step is introduced, using potassium hydroxide at room temperature, to smooth the surface of the nanostructures after the MACE process. This chemical treatment allows to improve passivation by surface area control and removing surface defects. In this research, I demonstrate the Aluminum Oxide (Al2O3) passivation on nanostructure using atomic layer deposition (ALD) process. 10nm of Al2O3 layer makes effective passivation on nanostructure with optimized post annealing in forming gas (N2/H2) environment. However, 10nm thickness is not suitable for hetero structure because of carrier transportation. For carrier transportation, ultrathin Al2O3 (≤ 1nm) layer is used for passivation, but effective passivation is not achieved because of insufficient hydrogen contents. This issue is solved to use additional ultrathin SiO2 (1nm) below Al2O3 layer and hydrogenation from doped a-Si:H.
Moreover, the nanostructure is creased on gallium phosphide (GaP) by SNL and MACE process. The fabrication process is modified by control of metal layer and MACE solution.
ContributorsKim, Sangpyeong (Author) / Honsberg, Christiana (Thesis advisor) / Bowden, Stuart (Committee member) / Goryll, Michael (Committee member) / Augusto, Andre (Committee member) / Arizona State University (Publisher)
Created2021
Description
This study focuses on the implications of a high reverse bias breakdown in silicon heterojunction cells (SHJ). In relevant literature, there is a lack of explicit investigation which
compares high breakdown voltage cells (commonly SHJ) to low breakdown voltage cells
(commonly silicon homojunctions) in an installation setting. In addition, their relationship with
shading and how they react with bypass diodes are also not very prevalent. Therefore, my project
dives into how shading impacts a string of high breakdown voltage cells and a string of low
breakdown voltage cells, as well as how those cells interact with a bypass diode.
In order to conduct this investigation, I used the simulation software LTSpice XVII to
create an accurate simulation model of a SHJ cell with a 21 V reverse breakdown voltage. With
this cell model, I strung 10 cells together, and varied the shading on a single cell while measuring
the string’s output current, voltage, and power. Next, I attached a bypass diode to the shaded
cell, and continued to increase the number of cells attached to the bypass diode while continuing
to examine the string’s output. Once I gathered this data, I modified the original cell model to
have a lower reverse breakdown voltage of 5 V. From here, I strung 10 cells together again, and
repeated the same measurements from the 21 V string.
Upon completing these measurements, I found that the SHJ cells were in fact harder to
force into reverse bias than the cells with the lower reverse breakdown voltage, suggesting that
solar installation owners should consider transitioning to SHJ-based modules. When bypass
diodes are being considered, my results demonstrated that heavy shading (about 65% and
higher) was required for the bypass diodes to have an observable impact on the string’s power
output. Therefore, owners should consider how severe the shading their installation may receive
before investing in bypass diodes. If owners do find the need for the bypass diodes, my findings
also show that the diodes should be used sparingly and in a compromise with output power and
cost.
ContributorsAvalos, Christian (Author) / Honsberg, Christiana (Thesis advisor) / Bowden, Stuart (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2023
Description
This comprehensive library of photovoltaic functions (PVSimLib) is an attempt to help the photovoltaics community to solve one of its long-lasting problems, the lack of a simple, flexible and comprehensive tool that can be used for photovoltaic calculations. The library contains a collection of useful functions and detailed examples that will show the user how to take advantage of the resources present in this library. The results will show how in combination with other Python libraries (Matplotlib), this library becomes a powerful tool for anyone involved in solar power.
ContributorsReguera, Pedro (Author) / Honsberg, Christiana (Thesis advisor) / King, Richard (Committee member) / Bowden, Stuart (Committee member) / Arizona State University (Publisher)
Created2018
Description
In this dissertation, I investigate the electronic properties of two important silicon(Si)-based heterojunctions 1) hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) which has already been commercialized in Heterojunction with Intrinsic Thin-layer (HIT) cells and 2) gallium phosphide/silicon (GaP/Si) which has been suggested to be a good candidate for replacing a-Si:H/c-Si in HIT cells in order to boost the HIT cell’s efficiency.
In the first part, the defect states of amorphous silicon (a-Si) and a-Si:H material are studied using density functional theory (DFT). I first employ simulated annealing using molecular dynamics (MD) to create stable configurations of a-Si:H, and then analyze the atomic and electronic structure to investigate which structural defects interact with H, and how the electronic structure changes with H addition. I find that H atoms decrease the density of mid-gap states and increase the band gap of a-Si by binding to Si atoms with strained bonds. My results also indicate that Si atoms with strained bonds creates high-localized orbitals in the mobility gap of a-Si, and the binding of H atoms to them can dramatically decrease their degree of localization.
In the second part, I explore the effect of the H binding configuration on the electronic properties of a-Si:H/c-Si heterostructure using density functional theory studies of models of the interface between a-Si:H and c-Si. The electronic properties from DFT show that depending on the energy difference between configurations, the electronic properties are sensitive to the H binding configurations.
In the last part, I examine the electronic structure of GaP/Si(001) heterojunctions and the effect of hydrogen H passivation at the interface in comparison to interface mixing, through DFT calculations. My calculations show that due to the heterovalent mismatch nature of the GaP/Si interface, there is a high density of localized states at the abrupt GaP/Si interface due to the excess charge associated with heterovalent bonding, as reported elsewhere. I find that the addition of H leads to additional bonding at the interface which mitigates the charge imbalance, and greatly reduces the density of localized states, leading to a nearly ideal heterojunction.
In the first part, the defect states of amorphous silicon (a-Si) and a-Si:H material are studied using density functional theory (DFT). I first employ simulated annealing using molecular dynamics (MD) to create stable configurations of a-Si:H, and then analyze the atomic and electronic structure to investigate which structural defects interact with H, and how the electronic structure changes with H addition. I find that H atoms decrease the density of mid-gap states and increase the band gap of a-Si by binding to Si atoms with strained bonds. My results also indicate that Si atoms with strained bonds creates high-localized orbitals in the mobility gap of a-Si, and the binding of H atoms to them can dramatically decrease their degree of localization.
In the second part, I explore the effect of the H binding configuration on the electronic properties of a-Si:H/c-Si heterostructure using density functional theory studies of models of the interface between a-Si:H and c-Si. The electronic properties from DFT show that depending on the energy difference between configurations, the electronic properties are sensitive to the H binding configurations.
In the last part, I examine the electronic structure of GaP/Si(001) heterojunctions and the effect of hydrogen H passivation at the interface in comparison to interface mixing, through DFT calculations. My calculations show that due to the heterovalent mismatch nature of the GaP/Si interface, there is a high density of localized states at the abrupt GaP/Si interface due to the excess charge associated with heterovalent bonding, as reported elsewhere. I find that the addition of H leads to additional bonding at the interface which mitigates the charge imbalance, and greatly reduces the density of localized states, leading to a nearly ideal heterojunction.
ContributorsVatan Meidanshahi, Reza (Author) / Goodnick, Stephen Marshall (Thesis advisor) / Vasileska, Dragica (Committee member) / Bowden, Stuart (Committee member) / Honsberg, Christiana (Committee member) / Arizona State University (Publisher)
Created2019