Matching Items (60)
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Description
Proton exchange membrane fuel cells (PEMFCs) run on pure hydrogen and oxygen (or air), producing electricity, water, and some heat. This makes PEMFC an attractive option for clean power generation. PEMFCs also operate at low temperature which makes them quick to start up and easy to handle. PEMFCs have several

Proton exchange membrane fuel cells (PEMFCs) run on pure hydrogen and oxygen (or air), producing electricity, water, and some heat. This makes PEMFC an attractive option for clean power generation. PEMFCs also operate at low temperature which makes them quick to start up and easy to handle. PEMFCs have several important limitations which must be overcome before commercial viability can be achieved. Active areas of research into making them commercially viable include reducing the cost, size and weight of fuel cells while also increasing their durability and performance. A growing and important part of this research involves the computer modeling of fuel cells. High quality computer modeling and simulation of fuel cells can help speed up the discovery of optimized fuel cell components. Computer modeling can also help improve fundamental understanding of the mechanisms and reactions that take place within the fuel cell. The work presented in this thesis describes a procedure for utilizing computer modeling to create high quality fuel cell simulations using Ansys Fluent 12.1. Methods for creating computer aided design (CAD) models of fuel cells are discussed. Detailed simulation parameters are described and emphasis is placed on establishing convergence criteria which are essential for producing consistent results. A mesh sensitivity study of the catalyst and membrane layers is presented showing the importance of adhering to strictly defined convergence criteria. A study of iteration sensitivity of the simulation at low and high current densities is performed which demonstrates the variance in the rate of convergence and the absolute difference between solution values derived at low numbers of iterations and high numbers of iterations.
ContributorsArvay, Adam (Author) / Madakannan, Arunachalanadar (Thesis advisor) / Peng, Xihong (Committee member) / Liang, Yong (Committee member) / Subach, James (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Dye sensitized solar cells (DSSCs) are the third generation solar cells expected to outperform the first two generations of solar cells with their advantages of comparative higher efficiency and lower manufacturing costs. The manufacturing cost of Dye sensitized solar cells is one fifth of the conventional silicon solar cell. However,

Dye sensitized solar cells (DSSCs) are the third generation solar cells expected to outperform the first two generations of solar cells with their advantages of comparative higher efficiency and lower manufacturing costs. The manufacturing cost of Dye sensitized solar cells is one fifth of the conventional silicon solar cell. However, DSSCs have problems of low conversion efficiency, stability and reliability. Some effective approaches are required to improve their performance. This paper projects the work related to assessment and verification of the repeatability of the semi-automated fabrication process. Changes were introduced in to the fabrication process to enhance the efficiency and stability. The sealant step in the fabrication process was remodeled to a newer version with an improvement in efficiency from 11% to 11.8%. Sputtering was performed on counter electrode in 30 seconds intervals. Cells were fabricated to assess the performance & time dependent characteristics from EIS experiments. Series resistance increased three times in sputtered Pt electrode as compared to standard platinum electrode. This resulted in the degradation of conductive surface on glass electrode due to heavy bombardment of ions. The second phase of the project work relates to the incorporation of SWCNT on the TiO2 electrode and its effect on the cell efficiency. Different weight loadings (0.1 wt %, 0.2 wt%, 0.4 wt %) of SWCNTs were prepared and mixed with the commercial TiO2 paste and ethanol solvent. The TiO2-SWCNT layer was coated on the electrode using screen-printing technique. Both open circuit voltage and photocurrent were found to have measurable dependence on the TiO2 layer loading. Photo voltage ranged from ~0.73 V to ~0.43 V and photocurrent from ~8 to ~33 mA depending on weight percent loading. This behavior is due to aggregation of particles and most TiO2 aggregate particles are not connected to SWCNT. Transparency loss was observed leading to saturation in the photo current and limiting the light absorption within the TiO2 film.
ContributorsKinhal, Kartik (Author) / Munukutla, Lakshmi V (Thesis advisor) / Subach, James (Committee member) / Peng, Xihong (Committee member) / Arizona State University (Publisher)
Created2011
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Description
In this project, a novel method is presented for measuring the resistivity of nanoscale metallic conductors (nanowires) using a variable-spacing 2-point method with a modified ultrahigh vacuum scanning tunneling microscope. An auxiliary field emission imaging method that allows for scanning insulating surfaces using a large gap distance (20nm) is also

In this project, a novel method is presented for measuring the resistivity of nanoscale metallic conductors (nanowires) using a variable-spacing 2-point method with a modified ultrahigh vacuum scanning tunneling microscope. An auxiliary field emission imaging method that allows for scanning insulating surfaces using a large gap distance (20nm) is also presented. Using these methods, the resistivity of self-assembled endotaxial FeSi2 nanowires (NWs) on Si(110) was measured. The resistivity was found to vary inversely with NW width, being rhoNW = 200 uOhm cm at 12 nm and 300 uOhm cm at 2 nm. The increase at small w is attributed to boundary scattering, and is fit to the Fuchs-Sondheimer model, yielding values of rho0 = 150 uOhm cm and lambda = 2.4 nm, for specularity parameter p = 0.5. These results are attributed to a high concentration of point defects in the FeSi2 structure, with a correspondingly short inelastic electron scattering length. It is remarkable that the defect concentration persists in very small structures, and is not changed by surface oxidation.
ContributorsTobler, Samuel (Author) / Bennett, Peter (Thesis advisor) / McCartney, Martha (Committee member) / Tao, Nongjian (Committee member) / Doak, Bruce (Committee member) / Chen, Tingyong (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Battery performance has been studied at different temperature, C rate. Different types of batteries have been used. Capacity and impedance are two factors, which are focused in the thesis. To evaluate battery performance and battery conditions, the SOC (state of charge) determination methods have been studied in the thesis. There

Battery performance has been studied at different temperature, C rate. Different types of batteries have been used. Capacity and impedance are two factors, which are focused in the thesis. To evaluate battery performance and battery conditions, the SOC (state of charge) determination methods have been studied in the thesis. There are two types of batteries divided in three groups: group I. Ni-Cd battery (2V, 8Ah); group II. Lead-acid battery (2V, 8Ah); and group III. Lead-acid battery (2V, 25Ah). The impedance testing is using electrochemical impedance spectroscopy methods. AC impedance method has been used to test different state of charge (100%, 80%, 60%, 40%, 20%). For the corrosion part, the corrosion rate of metal material in the heat transfer fluids has been tested at different temperature. Hastelloys C-276 in eutectic molten salts a mixture of NaCl, KCl and ZnCl2 using potentiodynamic method (swap from ± 30 mV in 0.2 mV.s-1). The lowest corrosion rate of Hastelloy C-276 is 5.51 µm per year at 250 °C. Particularly, the corrosion rate of Hastelloy C-276 jumps up to 53.33 µm per year at 400 °C.
ContributorsChu, Ximo (Author) / Madakannan, Arunachalanadar (Thesis advisor) / Peng, Xihong (Committee member) / Nam, Changho (Committee member) / Arizona State University (Publisher)
Created2013
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Description
In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals

In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals in the plasma react with the carbon groups leading to carbon removal for the ILD films. Results indicate that an N2 plasma forms an amide-like layer on the surface which apparently leads to reduced carbon abstraction from an H2 plasma process. In addition, FTIR spectra indicate the formation of hydroxyl (Si-OH) groups following the plasma exposure. Increased temperature (380 °C) processing leads to a reduction of the hydroxyl group formation compared to ambient temperature processes, resulting in reduced changes of the dielectric constant. For CMP Cu surfaces, the carbonate contamination was removed by an H2 plasma process at elevated temperature while the C-C and C-H contamination was removed by an N2 plasma process at elevated temperature. The second part of this study examined oxide stability and cleaning of Ru surfaces as well as consequent Cu film thermal stability with the Ru layers. The ~2 monolayer native Ru oxide was reduced after H-plasma processing. The thermal stability or islanding of the Cu film on the Ru substrate was characterized by in-situ XPS. After plasma cleaning of the Ru adhesion layer, the deposited Cu exhibited full coverage. In contrast, for Cu deposition on the Ru native oxide substrate, Cu islanding was detected and was described in terms of grain boundary grooving and surface and interface energies. The thermal stability of 7 nm Ti, Pt and Ru ii interfacial adhesion layers between a Cu film (10 nm) and a Ta barrier layer (4 nm) have been investigated in the third part. The barrier properties and interfacial stability have been evaluated by Rutherford backscattering spectrometry (RBS). Atomic force microscopy (AFM) was used to measure the surfaces before and after annealing, and all the surfaces are relatively smooth excluding islanding or de-wetting phenomena as a cause of the instability. The RBS showed no discernible diffusion across the adhesion layer/Ta and Ta/Si interfaces which provides a stable underlying layer. For a Ti interfacial layer RBS indicates that during 400 °C annealing Ti interdiffuses through the Cu film and accumulates at the surface. For the Pt/Cu system Pt interdiffuion is detected which is less evident than Ti. Among the three adhesion layer candidates, Ru shows negligible diffusion into the Cu film indicating thermal stability at 400 °C.
ContributorsLiu, Xin (Author) / Nemanich, Robert (Thesis advisor) / Chamberlin, Ralph (Committee member) / Chen, Tingyong (Committee member) / Smith, David (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2012
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Description
One dimensional (1D) and quasi-one dimensional quantum wires have been a subject of both theoretical and experimental interest since 1990s and before. Phenomena such as the "0.7 structure" in the conductance leave many open questions. In this dissertation, I study the properties and the internal electron states of semiconductor quantum

One dimensional (1D) and quasi-one dimensional quantum wires have been a subject of both theoretical and experimental interest since 1990s and before. Phenomena such as the "0.7 structure" in the conductance leave many open questions. In this dissertation, I study the properties and the internal electron states of semiconductor quantum wires with the path integral Monte Carlo (PIMC) method. PIMC is a tool for simulating many-body quantum systems at finite temperature. Its ability to calculate thermodynamic properties and various correlation functions makes it an ideal tool in bridging experiments with theories. A general study of the features interpreted by the Luttinger liquid theory and observed in experiments is first presented, showing the need for new PIMC calculations in this field. I calculate the DC conductance at finite temperature for both noninteracting and interacting electrons. The quantized conductance is identified in PIMC simulations without making the same approximation in the Luttinger model. The low electron density regime is subject to strong interactions, since the kinetic energy decreases faster than the Coulomb interaction at low density. An electron state called the Wigner crystal has been proposed in this regime for quasi-1D wires. By using PIMC, I observe the zig-zag structure of the Wigner crystal. The quantum fluctuations suppress the long range correla- tions, making the order short-ranged. Spin correlations are calculated and used to evaluate the spin coupling strength in a zig-zag state. I also find that as the density increases, electrons undergo a structural phase transition to a dimer state, in which two electrons of opposite spins are coupled across the two rows of the zig-zag. A phase diagram is sketched for a range of densities and transverse confinements. The quantum point contact (QPC) is a typical realization of quantum wires. I study the QPC by explicitly simulating a system of electrons in and around a Timp potential (Timp, 1992). Localization of a single electron in the middle of the channel is observed at 5 K, as the split gate voltage increases. The DC conductance is calculated, which shows the effect of the Coulomb interaction. At 1 K and low electron density, a state similar to the Wigner crystal is found inside the channel.
ContributorsLiu, Jianheng, 1982- (Author) / Shumway, John B (Thesis advisor) / Schmidt, Kevin E (Committee member) / Chen, Tingyong (Committee member) / Yu, Hongbin (Committee member) / Ros, Robert (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Microgrids are a subset of the modern power structure; using distributed generation (DG) to supply power to communities rather than vast regions. The reduced scale mitigates loss allowing the power produced to do more with better control, giving greater security, reliability, and design flexibility. This paper explores the performance and

Microgrids are a subset of the modern power structure; using distributed generation (DG) to supply power to communities rather than vast regions. The reduced scale mitigates loss allowing the power produced to do more with better control, giving greater security, reliability, and design flexibility. This paper explores the performance and cost viability of a hybrid grid-tied microgrid that utilizes Photovoltaic (PV), batteries, and fuel cell (FC) technology. The concept proposes that each community home is equipped with more PV than is required for normal operation. As the homes are part of a microgrid, excess or unused energy from one home is collected for use elsewhere within the microgrid footprint. The surplus power that would have been discarded becomes a community asset, and is used to run intermittent services. In this paper, the modeled community does not have parking adjacent to each home allowing for the installment of a privately owned slower Level 2 charger, making EV ownership option untenable. A solution is to provide a Level 3 DC Quick Charger (DCQC) as the intermittent service. The addition of batteries and Fuel Cells are meant to increase load leveling, reliability, and instill limited island capability.
ContributorsPatterson, Maxx (Author) / Madakannan, Arunachalanadar (Thesis advisor) / Macia, Narciso (Committee member) / Peng, Xihong (Committee member) / Arizona State University (Publisher)
Created2013
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Description
In this thesis, we present the study of several physical properties of relativistic mat- ters under extreme conditions. We start by deriving the rate of the nonleptonic weak processes and the bulk viscosity in several spin-one color superconducting phases of quark matter. We also calculate the bulk viscosity in the

In this thesis, we present the study of several physical properties of relativistic mat- ters under extreme conditions. We start by deriving the rate of the nonleptonic weak processes and the bulk viscosity in several spin-one color superconducting phases of quark matter. We also calculate the bulk viscosity in the nonlinear and anharmonic regime in the normal phase of strange quark matter. We point out several qualitative effects due to the anharmonicity, although quantitatively they appear to be relatively small. In the corresponding study, we take into account the interplay between the non- leptonic and semileptonic weak processes. The results can be important in order to relate accessible observables of compact stars to their internal composition. We also use quantum field theoretical methods to study the transport properties in monolayer graphene in a strong magnetic field. The corresponding quasi-relativistic system re- veals an anomalous quantum Hall effect, whose features are directly connected with the spontaneous flavor symmetry breaking. We study the microscopic origin of Fara- day rotation and magneto-optical transmission in graphene and show that their main features are in agreement with the experimental data.
ContributorsWang, Xinyang, Ph.D (Author) / Shovkovy, Igor (Thesis advisor) / Belitsky, Andrei (Committee member) / Easson, Damien (Committee member) / Peng, Xihong (Committee member) / Vachaspati, Tanmay (Committee member) / Arizona State University (Publisher)
Created2013
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Description
High electron mobility transistors (HEMTs) based on Group III-nitride heterostructures have been characterized by advanced electron microscopy methods including off-axis electron holography, nanoscale chemical analysis, and electrical measurements, as well as other techniques. The dissertation was organized primarily into three topical areas: (1) characterization of near-gate defects in electrically stressed

High electron mobility transistors (HEMTs) based on Group III-nitride heterostructures have been characterized by advanced electron microscopy methods including off-axis electron holography, nanoscale chemical analysis, and electrical measurements, as well as other techniques. The dissertation was organized primarily into three topical areas: (1) characterization of near-gate defects in electrically stressed AlGaN/GaN HEMTs, (2) microstructural and chemical analysis of the gate/buffer interface of AlN/GaN HEMTs, and (3) studies of the impact of laser-liftoff processing on AlGaN/GaN HEMTs. The electrical performance of stressed AlGaN/GaN HEMTs was measured and the devices binned accordingly. Source- and drain-side degraded, undegraded, and unstressed devices were then prepared via focused-ion-beam milling for examination. Defects in the near-gate region were identified and their correlation to electrical measurements analyzed. Increased gate leakage after electrical stressing is typically attributed to "V"-shaped defects at the gate edge. However, strong evidence was found for gate metal diffusion into the barrier layer as another contributing factor. AlN/GaN HEMTs grown on sapphire substrates were found to have high electrical performance which is attributed to the AlN barrier layer, and robust ohmic and gate contact processes. TEM analysis identified oxidation at the gate metal/AlN buffer layer interface. This thin a-oxide gate insulator was further characterized by energy-dispersive x-ray spectroscopy and energy-filtered TEM. Attributed to this previously unidentified layer, high reverse gate bias up to −30 V was demonstrated and drain-induced gate leakage was suppressed to values of less than 10−6 A/mm. In addition, extrinsic gm and ft * LG were improved to the highest reported values for AlN/GaN HEMTs fabricated on sapphire substrates. Laser-liftoff (LLO) processing was used to separate the active layers from sapphire substrates for several GaN-based HEMT devices, including AlGaN/GaN and InAlN/GaN heterostructures. Warpage of the LLO samples resulted from relaxation of the as-grown strain and strain arising from dielectric and metal depositions, and this strain was quantified by both Newton's rings and Raman spectroscopy methods. TEM analysis demonstrated that the LLO processing produced no detrimental effects on the quality of the epitaxial layers. TEM micrographs showed no evidence of either damage to the ~2 μm GaN epilayer generated threading defects.
ContributorsJohnson, Michael R. (Author) / Mccartney, Martha R (Thesis advisor) / Smith, David J. (Committee member) / Goodnick, Stephen (Committee member) / Shumway, John (Committee member) / Chen, Tingyong (Committee member) / Arizona State University (Publisher)
Created2012
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Description
This thesis addresses certain quantum aspects of the event horizon using the AdS/CFT correspondence. This correspondence is profound since it describes a quantum theory of gravity in d + 1 dimensions from the perspective of a dual quantum field theory living in d dimensions. We begin by considering Rindler space

This thesis addresses certain quantum aspects of the event horizon using the AdS/CFT correspondence. This correspondence is profound since it describes a quantum theory of gravity in d + 1 dimensions from the perspective of a dual quantum field theory living in d dimensions. We begin by considering Rindler space which is the part of Minkowski space seen by an observer with a constant proper acceleration. Because it has an event horizon, Rindler space has been studied in great detail within the context of quantum field theory. However, a quantum gravitational treatment of Rindler space is handicapped by the fact that quantum gravity in flat space is poorly understood. By contrast, quantum gravity in anti-de Sitter space (AdS), is relatively well understood via the AdS/CFT correspondence. Taking this cue, we construct Rindler coordinates for AdS (Rindler-AdS space) in d + 1 spacetime dimensions. In three spacetime dimensions, we find novel one-parameter families of stationary vacua labeled by a rotation parameter β. The interesting thing about these rotating Rindler-AdS spaces is that they possess an observer-dependent ergoregion in addition to having an event horizon. Turning next to the application of AdS/CFT correspondence to Rindler-AdS space, we posit that the two Rindler wedges in AdSd+1 are dual to an entangled conformal field theory (CFT) that lives on two boundaries with geometry R × Hd-1. Specializing to three spacetime dimensions, we derive the thermodynamics of Rindler-AdS space using the boundary CFT. We then probe the causal structure of the spacetime by sending in a time-like source and observe that the CFT “knows” when the source has fallen past the Rindler horizon. We conclude by proposing an alternate foliation of Rindler-AdS which is dual to a CFT living in de Sitter space. Towards the end, we consider the concept of weak measurements in quantum mechanics, wherein the measuring instrument is weakly coupled to the system being measured. We consider such measurements in the context of two examples, viz. the decay of an excited atom, and the tunneling of a particle trapped in a well, and discuss the salient features of such measurements.
ContributorsSamantray, Prasant (Author) / Parikh, Maulik (Thesis advisor) / Davies, Paul (Committee member) / Vachaspati, Tanmay (Committee member) / Easson, Damien (Committee member) / Alarcon, Ricardo (Committee member) / Arizona State University (Publisher)
Created2012