Matching Items (26)
151352-Thumbnail Image.png
Description
A fully automated logic design methodology for radiation hardened by design (RHBD) high speed logic using fine grained triple modular redundancy (TMR) is presented. The hardening techniques used in the cell library are described and evaluated, with a focus on both layout techniques that mitigate total ionizing dose (TID) and

A fully automated logic design methodology for radiation hardened by design (RHBD) high speed logic using fine grained triple modular redundancy (TMR) is presented. The hardening techniques used in the cell library are described and evaluated, with a focus on both layout techniques that mitigate total ionizing dose (TID) and latchup issues and flip-flop designs that mitigate single event transient (SET) and single event upset (SEU) issues. The base TMR self-correcting master-slave flip-flop is described and compared to more traditional hardening techniques. Additional refinements are presented, including testability features that disable the self-correction to allow detection of manufacturing defects. The circuit approach is validated for hardness using both heavy ion and proton broad beam testing. For synthesis and auto place and route, the methodology and circuits leverage commercial logic design automation tools. These tools are glued together with custom CAD tools designed to enable easy conversion of standard single redundant hardware description language (HDL) files into hardened TMR circuitry. The flow allows hardening of any synthesizable logic at clock frequencies comparable to unhardened designs and supports standard low-power techniques, e.g. clock gating and supply voltage scaling.
ContributorsHindman, Nathan (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Barnaby, Hugh (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2012
151418-Thumbnail Image.png
Description
ABSTRACT This work seeks to develop a practical solution for short range ultrasonic communications and produce an integrated array of acoustic transmitters on a flexible substrate. This is done using flexible thin film transistor (TFT) and micro electromechanical systems (MEMS). The goal is to develop a flexible system capable of

ABSTRACT This work seeks to develop a practical solution for short range ultrasonic communications and produce an integrated array of acoustic transmitters on a flexible substrate. This is done using flexible thin film transistor (TFT) and micro electromechanical systems (MEMS). The goal is to develop a flexible system capable of communicating in the ultrasonic frequency range at a distance of 10 - 100 meters. This requires a great deal of innovation on the part of the FDC team developing the TFT driving circuitry and the MEMS team adapting the technology for fabrication on a flexible substrate. The technologies required for this research are independently developed. The TFT development is driven primarily by research into flexible displays. The MEMS development is driving by research in biosensors and micro actuators. This project involves the integration of TFT flexible circuit capabilities with MEMS micro actuators in the novel area of flexible acoustic transmitter arrays. This thesis focuses on the design, testing and analysis of the circuit components required for this project.
ContributorsDaugherty, Robin (Author) / Allee, David R. (Thesis advisor) / Chae, Junseok (Thesis advisor) / Aberle, James T (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2012
152388-Thumbnail Image.png
Description
Microprocessors are the processing heart of any digital system and are central to all the technological advancements of the age including space exploration and monitoring. The demands of space exploration require a special class of microprocessors called radiation hardened microprocessors which are less susceptible to radiation present outside the earth's

Microprocessors are the processing heart of any digital system and are central to all the technological advancements of the age including space exploration and monitoring. The demands of space exploration require a special class of microprocessors called radiation hardened microprocessors which are less susceptible to radiation present outside the earth's atmosphere, in other words their functioning is not disrupted even in presence of disruptive radiation. The presence of these particles forces the designers to come up with design techniques at circuit and chip levels to alleviate the errors which can be encountered in the functioning of microprocessors. Microprocessor evolution has been very rapid in terms of performance but the same cannot be said about its rad-hard counterpart. With the total data processing capability overall increasing rapidly, the clear lack of performance of the processors manifests as a bottleneck in any processing system. To design high performance rad-hard microprocessors designers have to overcome difficult design problems at various design stages i.e. Architecture, Synthesis, Floorplanning, Optimization, routing and analysis all the while maintaining circuit radiation hardness. The reference design `HERMES' is targeted at 90nm IBM G process and is expected to reach 500Mhz which is twice as fast any processor currently available. Chapter 1 talks about the mechanisms of radiation effects which cause upsets and degradation to the functioning of digital circuits. Chapter 2 gives a brief description of the components which are used in the design and are part of the consistent efforts at ASUVLSI lab culminating in this chip level implementation of the design. Chapter 3 explains the basic digital design ASIC flow and the changes made to it leading to a rad-hard specific ASIC flow used in implementing this chip. Chapter 4 talks about the triple mode redundant (TMR) specific flow which is used in the block implementation, delineating the challenges faced and the solutions proposed to make the flow work. Chapter 5 explains the challenges faced and solutions arrived at while using the top-level flow described in chapter 3. Chapter 6 puts together the results and analyzes the design in terms of basic integrated circuit design constraints.
ContributorsRamamurthy, Chandarasekaran (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Barnaby, Hugh J (Committee member) / Mayhew, David (Committee member) / Arizona State University (Publisher)
Created2013
150352-Thumbnail Image.png
Description
Thin film transistors (TFTs) are being used in a wide variety of applications such as image sensors, radiation detectors, as well as for use in liquid crystal displays. However, there is a conspicuous absence of interface electronics for bridging the gap between the flexible sensors and digitized displays. Hence is

Thin film transistors (TFTs) are being used in a wide variety of applications such as image sensors, radiation detectors, as well as for use in liquid crystal displays. However, there is a conspicuous absence of interface electronics for bridging the gap between the flexible sensors and digitized displays. Hence is the need to build the same. In this thesis, the feasibility of building mixed analog circuits in TFTs are explored and demonstrated. A flexible CMOS op-amp is demonstrated using a-Si:H and pentacene TFTs. The achieved performance is ¡Ö 50 dB of DC open loop gain with unity gain frequency (UGF) of 7 kHz. The op-amp is built on the popular 2 stage topology with the 2nd stage being cascoded to provide sufficient gain. A novel biasing circuit was successfully developed modifying the gm biasing circuit to retard the performance degradation as the TFTs aged. A switched capacitor 7 bit DAC was developed in only nMOS topology using a-Si:H TFTs, based on charge sharing concept. The DAC achieved a maximum differential non-linearity (DNL) of 0.6 least significant bit (LSB), while the maximum integral non-linearity (INL) was 1 LSB. TFTs were used as switches in this architecture; as a result the performance was quite unchanged even as the TFTs degraded. A 5 bit fully flash ADC was also designed using all nMOS a-Si:H TFTs. Gray coding was implemented at the output to avoid errors due to comparator meta-stability. Finally a 5 bit current steering DAC was also built using all nMOS a-Si:H TFTs. However, due to process variation, the DNL was increased to 1.2 while the INL was about 1.8 LSB. Measurements were made on the external stress effects on zinc indium oxide (ZIO) TFTs. Electrically induced stresses were studied applying DC bias on the gate and drain. These stresses shifted the device characteristics like threshold voltage and mobility. The TFTs were then mechanically stressed by stretching them across cylindrical structures of various radii. Both the subthreshold swing and mobility underwent significant changes when the stress was tensile while the change was minor under compressive stress, applied parallel to channel length.
ContributorsDey, Aritra (Author) / Allee, David R. (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Garrity, Douglas A (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence T (Committee member) / Arizona State University (Publisher)
Created2011
150703-Thumbnail Image.png
Description
The geometric growth in the integrated circuit technology due to transistor scaling also with system-on-chip design strategy, the complexity of the integrated circuit has increased manifold. Short time to market with high reliability and performance is one of the most competitive challenges. Both custom and ASIC design methodologies have evolved

The geometric growth in the integrated circuit technology due to transistor scaling also with system-on-chip design strategy, the complexity of the integrated circuit has increased manifold. Short time to market with high reliability and performance is one of the most competitive challenges. Both custom and ASIC design methodologies have evolved over the time to cope with this but the high manual labor in custom and statistic design in ASIC are still causes of concern. This work proposes a new circuit design strategy that focuses mostly on arrayed structures like TLB, RF, Cache, IPCAM etc. that reduces the manual effort to a great extent and also makes the design regular, repetitive still achieving high performance. The method proposes making the complete design custom schematic but using the standard cells. This requires adding some custom cells to the already exhaustive library to optimize the design for performance. Once schematic is finalized, the designer places these standard cells in a spreadsheet, placing closely the cells in the critical paths. A Perl script then generates Cadence Encounter compatible placement file. The design is then routed in Encounter. Since designer is the best judge of the circuit architecture, placement by the designer will allow achieve most optimal design. Several designs like IPCAM, issue logic, TLB, RF and Cache designs were carried out and the performance were compared against the fully custom and ASIC flow. The TLB, RF and Cache were the part of the HEMES microprocessor.
ContributorsMaurya, Satendra Kumar (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Vrudhula, Sarma (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2012
150113-Thumbnail Image.png
Description
A low temperature amorphous oxide thin film transistor (TFT) backplane technology for flexible organic light emitting diode (OLED) displays has been developed to create 4.1-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide

A low temperature amorphous oxide thin film transistor (TFT) backplane technology for flexible organic light emitting diode (OLED) displays has been developed to create 4.1-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication of white organic light emitting diode (OLED) displays. Mixed oxide semiconductor thin film transistors (TFTs) on flexible plastic substrates typically suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer enables significant improvements in both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment in the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible colorless plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors.
ContributorsMarrs, Michael (Author) / Raupp, Gregory B (Thesis advisor) / Vogt, Bryan D (Thesis advisor) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2011
151102-Thumbnail Image.png
Description
The field of flexible displays and electronics gained a big momentum within the recent years due to their ruggedness, thinness, and flexibility as well as low cost large area manufacturability. Amorphous silicon has been the dominant material used in the thin film transistor industry which could only utilize it as

The field of flexible displays and electronics gained a big momentum within the recent years due to their ruggedness, thinness, and flexibility as well as low cost large area manufacturability. Amorphous silicon has been the dominant material used in the thin film transistor industry which could only utilize it as N type thin film transistors (TFT). Amorphous silicon is an unstable material for low temperature manufacturing process and having only one kind of transistor means high power consumption for circuit operations. This thesis covers the three major researches done on flexible TFTs and flexible electronic circuits. First the characterization of both amorphous silicon TFTs and newly emerging mixed oxide TFTs were performed and the stability of these two materials is compared. During the research, both TFTs were stress tested under various biasing conditions and the threshold voltage was extracted to observe the shift in the threshold which shows the degradation of the material. Secondly, the design of the first flexible CMOS TFTs and CMOS gates were covered. The circuits were built using both inorganic and organic components (for nMOS and pMOS transistors respectively) and functionality tests were performed on basic gates like inverter, NAND and NOR gates and the working results are documented. Thirdly, a novel large area sensor structure is demonstrated under the Electronic Textile project section. This project is based on the concept that all the flexible electronics are flexible in only one direction and can not be used for conforming irregular shaped objects or create an electronic cloth for various applications like display or sensing. A laser detector sensor array is designed for proof of concept and is laid in strips that can be cut after manufacturing and weaved to each other to create a real flexible electronic textile. The circuit designed uses a unique architecture that pushes the data in a single line and reads the data from the same line and compares the signal to the original state to determine a sensor excitation. This architecture enables 2 dimensional addressing through an external controller while eliminating the need for 2 dimensional active matrix style electrical connections between the fibers.
ContributorsKaftanoglu, Korhan (Author) / Allee, David R. (Thesis advisor) / Kozicki, Michael N (Committee member) / Holbert, Keith E. (Committee member) / Kaminski, Jann P (Committee member) / Arizona State University (Publisher)
Created2012
151217-Thumbnail Image.png
Description
Circuits on smaller technology nodes become more vulnerable to radiation-induced upset. Since this is a major problem for electronic circuits used in space applications, designers have a variety of solutions in hand. Radiation hardening by design (RHBD) is an approach, where electronic components are designed to work properly in certain

Circuits on smaller technology nodes become more vulnerable to radiation-induced upset. Since this is a major problem for electronic circuits used in space applications, designers have a variety of solutions in hand. Radiation hardening by design (RHBD) is an approach, where electronic components are designed to work properly in certain radiation environments without the use of special fabrication processes. This work focuses on the cache design for a high performance microprocessor. The design tries to mitigate radiation effects like SEE, on a commercial foundry 45 nm SOI process. The design has been ported from a previously done cache design at the 90 nm process node. The cache design is a 16 KB, 4 way set associative, write-through design that uses a no-write allocate policy. The cache has been tested to write and read at above 2 GHz at VDD = 0.9 V. Interleaved layout, parity protection, dual redundancy, and checking circuits are used in the design to achieve radiation hardness. High speed is accomplished through the use of dynamic circuits and short wiring routes wherever possible. Gated clocks and optimized wire connections are used to reduce power. Structured methodology is used to build up the entire cache.
ContributorsXavier, Jerin (Author) / Clark, Lawrence T (Thesis advisor) / Cao, Yu (Committee member) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2012
153935-Thumbnail Image.png
Description
Clock generation and distribution are essential to CMOS microchips, providing synchronization to external devices and between internal sequential logic. Clocks in microprocessors are highly vulnerable to single event effects and designing reliable energy efficient clock networks for mission critical applications is a major challenge. This dissertation studies the basics of

Clock generation and distribution are essential to CMOS microchips, providing synchronization to external devices and between internal sequential logic. Clocks in microprocessors are highly vulnerable to single event effects and designing reliable energy efficient clock networks for mission critical applications is a major challenge. This dissertation studies the basics of radiation hardening, essentials of clock design and impact of particle strikes on clocks in detail and presents design techniques for hardening complete clock systems in digital ICs.

Since the sequential elements play a key role in deciding the robustness of any clocking strategy, hardened-by-design implementations of triple-mode redundant (TMR) pulse clocked latches and physical design methodologies for using TMR master-slave flip-flops in application specific ICs (ASICs) are proposed. A novel temporal pulse clocked latch design for low power radiation hardened applications is also proposed. Techniques for designing custom RHBD clock distribution networks (clock spines) and ASIC clock trees for a radiation hardened microprocessor using standard CAD tools are presented. A framework for analyzing the vulnerabilities of clock trees in general, and study the parameters that contribute the most to the tree’s failure, including impact on controlled latches is provided. This is then used to design an integrated temporally redundant clock tree and pulse clocked flip-flop based clocking scheme that is robust to single event transients (SETs) and single event upsets (SEUs). Subsequently, designing robust clock delay lines for use in double data rate (DDRx) memory applications is studied in detail. Several modules of the proposed radiation hardened all-digital delay locked loop are designed and studied. Many of the circuits proposed in this entire body of work have been implemented and tested on a standard low-power 90-nm process.
ContributorsChellappa, Srivatsan (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Cao, Yu (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2015
156785-Thumbnail Image.png
Description
The students of Arizona State University, under the mentorship of Dr George Karady, have been collaborating with Salt River Project (SRP), a major power utility in the state of Arizona, trying to study and optimize a battery-supported grid-tied rooftop Photovoltaic (PV) system, sold by a commercial vendor. SRP believes this

The students of Arizona State University, under the mentorship of Dr George Karady, have been collaborating with Salt River Project (SRP), a major power utility in the state of Arizona, trying to study and optimize a battery-supported grid-tied rooftop Photovoltaic (PV) system, sold by a commercial vendor. SRP believes this system has the potential to satisfy the needs of its customers, who opt for utilizing solar power to partially satisfy their power needs.

An important part of this elaborate project is the development of a new load forecasting algorithm and a better control strategy for the optimized utilization of the storage system. The built-in algorithm of this commercial unit uses simple forecasting and battery control strategies. With the recent improvement in Machine Learning (ML) techniques, development of a more sophisticated model of the problem in hand was possible. This research is aimed at achieving the goal by utilizing the appropriate ML techniques to better model the problem, which will essentially result in a better solution. In this research, a set of six unique features are used to model the load forecasting problem and different ML algorithms are simulated on the developed model. A similar approach is taken to solve the PV prediction problem. Finally, a very effective battery control strategy is built (utilizing the results of the load and PV forecasting), with the aim of ensuring a reduction in the amount of energy consumed from the grid during the “on-peak” hours. Apart from the reduction in the energy consumption, this battery control algorithm decelerates the “cycling aging” or the aging of the battery owing to the charge/dis-charges cycles endured by selectively charging/dis-charging the battery based on need.

ii

The results of this proposed strategy are verified using a hardware implementation (the PV system was coupled with a custom-built load bank and this setup was used to simulate a house). The results pertaining to the performances of the built-in algorithm and the ML algorithm are compared and the economic analysis is performed. The findings of this research have in the process of being published in a reputed journal.
ContributorsHariharan, Aashiek (Author) / Karady, George G. (Thesis advisor) / Heydt, Gerald Thomas (Committee member) / Qin, Jiangchao (Committee member) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2018