Matching Items (76)
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Description
The challenge of radiation therapy is to maximize the dose to the tumor while simultaneously minimizing the dose elsewhere. Proton therapy is well suited to this challenge due to the way protons slow down in matter. As the proton slows down, the rate of energy loss per unit path length

The challenge of radiation therapy is to maximize the dose to the tumor while simultaneously minimizing the dose elsewhere. Proton therapy is well suited to this challenge due to the way protons slow down in matter. As the proton slows down, the rate of energy loss per unit path length continuously increases leading to a sharp dose near the end of range. Unlike conventional radiation therapy, protons stop inside the patient, sparing tissue beyond the tumor. Proton therapy should be superior to existing modalities, however, because protons stop inside the patient, there is uncertainty in the range. “Range uncertainty” causes doctors to take a conservative approach in treatment planning, counteracting the advantages offered by proton therapy. Range uncertainty prevents proton therapy from reaching its full potential.

A new method of delivering protons, pencil-beam scanning (PBS), has become the new standard for treatment over the past few years. PBS utilizes magnets to raster scan a thin proton beam across the tumor at discrete locations and using many discrete pulses of typically 10 ms duration each. The depth is controlled by changing the beam energy. The discretization in time of the proton delivery allows for new methods of dose verification, however few devices have been developed which can meet the bandwidth demands of PBS.

In this work, two devices have been developed to perform dose verification and monitoring with an emphasis placed on fast response times. Measurements were performed at the Mayo Clinic. One detector addresses range uncertainty by measuring prompt gamma-rays emitted during treatment. The range detector presented in this work is able to measure the proton range in-vivo to within 1.1 mm at depths up to 11 cm in less than 500 ms and up to 7.5 cm in less than 200 ms. A beam fluence detector presented in this work is able to measure the position and shape of each beam spot. It is hoped that this work may lead to a further maturation of detection techniques in proton therapy, helping the treatment to reach its full potential to improve the outcomes in patients.
ContributorsHolmes, Jason M (Author) / Alarcon, Ricardo (Thesis advisor) / Bues, Martin (Committee member) / Galyaev, Eugene (Committee member) / Chamberlin, Ralph (Committee member) / Arizona State University (Publisher)
Created2019
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Description
In this research work, the process optimization of silver iodide-silver meta phosphate ionic glass molding for solid state super ionic stamping was performed. Solid state super ionic stamping is a process of all solid ambient condition electrochemical nano patterning technique. In solid state super ionic stamping, anodic dissolution on a

In this research work, the process optimization of silver iodide-silver meta phosphate ionic glass molding for solid state super ionic stamping was performed. Solid state super ionic stamping is a process of all solid ambient condition electrochemical nano patterning technique. In solid state super ionic stamping, anodic dissolution on a solid electrolyte –metal interface and subsequent charge-mass transport in the solid electrolyte is used for obtaining nanometer features on the metallic surface. The solid electrolyte referred to as the stamp is pre-patterned with features to be obtained on the metallic surface. This research developed the process for obtaining stamp with specific dimensions by making use of compression molding. The compression molding process was optimized by varying the five process parameters-temperature, pressure, holding time, pressing time and cooling time. The objective of the process optimization was to obtain best geometrical features for the stamp including flatness and surface roughness and by optimizing the compression molding process, stamp with minimum flatness and surface roughness was obtained. After the experimental optimization of the process was completed, statistical analysis was performed to understand the relative significance of the process parameters and the interaction of the process parameters on the flatness and surface roughness values of the molded stamp. Structural characterization was performed to obtain the variation of average domain size of ionic glass particles within the molded glass disk by varying the process parameters of holding time, pressing time and cooling time.
ContributorsPanikkar, Gautam (Author) / Hsu, Keng H (Thesis advisor) / Chan, Candace (Committee member) / Jiang, Hanqing (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Photocatalytic water splitting is a promising technique to produce H2 fuels from water using sustainable solar energy. To better design photocatalysts, the understanding of charge transfer at surfaces/interfaces and the corresponding structure change during the reaction is very important. Local structural and chemical information on nanoparticle surfaces or interfaces can

Photocatalytic water splitting is a promising technique to produce H2 fuels from water using sustainable solar energy. To better design photocatalysts, the understanding of charge transfer at surfaces/interfaces and the corresponding structure change during the reaction is very important. Local structural and chemical information on nanoparticle surfaces or interfaces can be achieved through characterizations on transmission electron microscopy (TEM). Emphasis should be put on materials structure changes during the reactions in their “working conditions”. Environmental TEM with in situ light illumination system allows the photocatalysts to be studied under light irradiation when exposed to H2O vapor. A set of ex situ and in situ TEM characterizations are carried out on typical types of TiO2 based photocatalysts. The observed structure changes during the reaction are correlated with the H2 production rate for structure-property relationships.

A surface disordering was observed in situ when well-defined anatase TiO2 rhombohedral nanoparticles were exposed to 1 Torr H2O vapor and 10suns light inside the environmental TEM. The disordering is believed to be related to high density of hydroxyl groups formed on surface oxygen vacancies during water splitting reactions.

Pt co-catalyst on TiO2 is able to split pure water producing H2 and O2. The H2 production rate drops during the reaction. Particle size growth during reaction was discovered with Z-contrast images. The particle size growth is believed to be a photo-electro-chemical Ostwald ripening.

Characterizations were also carried out on a more complicated photocatalyst system: Ni/NiO core/shell co-catalyst on TiO2. A decrease of the H2 production rate resulting from photo-corrosion was observed. The Ni is believed to be oxidized to Ni2+ by OH• radicals which are intermediate products of H2O oxidation. The mechanism that the OH• radicals leak into the cores through cracks on NiO shells is more supported by experiments.

Overall this research has done a comprehensive ex situ and in situ TEM characterizations following some typical TiO2 based photocatalysts during reactions. This research has shown the technique availability to study photocatalyst inside TEM in photocatalytic conditions. It also demonstrates the importance to follow structure changes of materials during reactions in understanding deactivation mechanisms.
ContributorsZhang, Liuxian (Author) / Crozier, Peter (Thesis advisor) / Smith, David (Committee member) / Chan, Candace (Committee member) / Liu, Jingyue (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Proton and fluorine diffusivity and ionic conductivity of 2-fluoropyridinium triflate (2-FPTf) and proton and fluorine diffusivity, ionic conductivity, and viscosity of trifluoromethanesulfonic acid (TFMSA) monohydrate have been measured over a wide range of temperatures. Diffusivities were measured using the pulsed-gradient spin-echo (PGSE) technique on a 300 MHz NMR spectrometer. Conductivities

Proton and fluorine diffusivity and ionic conductivity of 2-fluoropyridinium triflate (2-FPTf) and proton and fluorine diffusivity, ionic conductivity, and viscosity of trifluoromethanesulfonic acid (TFMSA) monohydrate have been measured over a wide range of temperatures. Diffusivities were measured using the pulsed-gradient spin-echo (PGSE) technique on a 300 MHz NMR spectrometer. Conductivities were measured using electrochemical impedance spectroscopy (EIS) on standard equipment and viscosities were determined using a Cannon-Ubbelohde viscometer. For 2-FPTF, the diffusivity of mobile protons increased from 1.84+/-0.06 x 10(-11) m2/s at 55 degC to 1.64+/-0.05 x 10(-10) m2/s at 115 degC while the diffusivity of 2-fluoropyridine fluorines increased from 2.22+/-0.07 x 10(-11) m2/s at 70 degC to 9.40+/-0.28 x 10(-11) m2/s at 115 degC. For TFMSA monohydrate, the diffusivity of protons increased from 7.67+/-0.23 x 10(-11) m2/s at 40 degC to 3.92+/-0.12 x 10(-10) m2/s at 110 degC while the diffusivity of fluorines increased from 4.63+/-0.14 x 10(-11) m2/s at 40 degC to 2.79+/-0.08 x 10(-10) m2/s at 110 degC, protons diffusing approximately 1.5 times faster than fluorines over the entire temperature range. NMR spectra indicate that proton diffusion occurs via direct hopping from TFMSA molecule to molecule. The conductivity of 2-FPTf varied from 0.85+/-0.03 mS/cm to 35.9+/-1.08 mS/cm between 25 and 110 degC. The conductivity of TFMSA monohydrate varied from 6.60+/-0.2 mS/cm to 84.6+/-2.5 mS/cm between 23 and 139 degC and its viscosity varied from 27.5+/-1.4 mPa.s to 4.38+/-0.22 mPa.s between 49 and 121.5 degC, in good agreement with literature values. Temperature dependences of the measured properties showed Arrhenius behavior with activation energies for proton diffusion, fluorine diffusion and ionic conduction for 2-FPTf above the melting point of 16.9+/-0.8 kJ/mol, 48.0+/-2.4 kJ/mol and 27.8+/-1.4 kJ/mol respectively. Activation energies for proton diffusion, fluorine diffusion, ionic conduction and viscosity for TFMSA monohydrate were 23.4+/-1.2 kJ/mol, 26.0+/-1.3 kJ/mol, 22.1+/-1.1 kJ/mol, and 26.9+/-1.3 kJ/mol respectively. The degree of dissociation of the charged species, calculated using the Nernst-Einstein relation, varied from 13 to 24% for 2-FPTf and from 25 to 29% for TFMSA monohydrate over the temperature range.
ContributorsAbdullah, Mohammed Wahed (Author) / Marzke, Robert F (Thesis advisor) / Gervasio, Dominic (Committee member) / Chamberlin, Ralph (Committee member) / Alarcon, Ricardo (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Cubic boron nitride (c-BN) has potential for electronic applications as an electron emitter and serving as a base material for diodes, transistors, etc. However, there has been limited research on c-BN reported, and many of the electronic properties of c-BN and c-BN interfaces have yet to be reported. This dissertation

Cubic boron nitride (c-BN) has potential for electronic applications as an electron emitter and serving as a base material for diodes, transistors, etc. However, there has been limited research on c-BN reported, and many of the electronic properties of c-BN and c-BN interfaces have yet to be reported. This dissertation focused on probing thin film c-BN deposited via plasma enhanced chemical vapor deposition (PECVD) with in situ photoelectron spectroscopy (PES). PES measurements were used to characterize the electronic properties of c-BN films and interfaces with vacuum and diamond. First, the interface between c-BN and vacuum were characterized with ultraviolet PES (UPS). UPS measurements indicated that as-deposited c-BN, H2 plasma treated c-BN, and annealed c-BN post H2 plasma treatment exhibited negative electron affinity surfaces. A dipole model suggested dipoles from H-terminated N surface sites were found to be responsible for the NEA surface. Then, Si was introduced into c-BN films to realize n-type doped c-BN. The valence structure and work function of c-BN:Si films were characterized with XPS and UPS measurements. Measurements were unable to confirm n-type character, and it is concluded that silicon nitride formation was the primary effect for the observations. Finally, XPS measurements were employed to measure the band offsets at the c-BN/diamond interface. Measurements indicated the valence band maximum (VBM) of c-BN was positioned ~0.8 eV above the VBM of diamond.
ContributorsShammas, Joseph (Author) / Nemanich, Robert J (Thesis advisor) / Ponce, Fernando (Committee member) / Chen, Tingyong (Committee member) / Chamberlin, Ralph (Committee member) / Arizona State University (Publisher)
Created2016
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Description
A series of experiments using a polarized beam incident on a polarized frozen spin target

(FROST) was conducted at Jefferson Lab in 2010. Results presented here were taken

during the second running period with the FROST target using the CEBAF Large Acceptance

Spectrometer (CLAS) detector at Jefferson Lab, which used transversely-polarized

protons in a

A series of experiments using a polarized beam incident on a polarized frozen spin target

(FROST) was conducted at Jefferson Lab in 2010. Results presented here were taken

during the second running period with the FROST target using the CEBAF Large Acceptance

Spectrometer (CLAS) detector at Jefferson Lab, which used transversely-polarized

protons in a butanol target and a circularly-polarized incident tagged photon beam with

energies between 0.62 and 2.93 GeV. Data are presented for the F and T polarization observables

for h meson photoproduction on the proton from W = 1.55 GeV to 1.80 GeV.

The data presented here will improve the world database and refine theoretical approaches

of nucleon structure.
ContributorsTucker, Ross (Author) / Ritchie, Barry (Thesis advisor) / Dugger, Michael (Committee member) / Alarcon, Ricardo (Committee member) / Lebed, Richard (Committee member) / Arizona State University (Publisher)
Created2016
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Description
Nanoscale semiconductors with their unique properties and potential applications have been a focus of extensive research in recent years. There are many ways in which semiconductors change the world with computers, cell phones, and solar panels, and nanoscale semiconductors having a promising potential to expand the efficiency, reduce the cost,

Nanoscale semiconductors with their unique properties and potential applications have been a focus of extensive research in recent years. There are many ways in which semiconductors change the world with computers, cell phones, and solar panels, and nanoscale semiconductors having a promising potential to expand the efficiency, reduce the cost, and improve the flexibility and durability of their design. In this study, theoretical quantum mechanical simulations were performed on several different nanoscale semiconductor materials, including graphene/phosphorene nanoribbons and group III-V nanowires. First principles density functional theory (DFT) was used to study the electronic and structural properties of these nanomaterials in their fully relaxed and strained states. The electronic band gap, effective masses of charge carriers, electronic orbitals, and density of states were most commonly examined with strain, both from intrinsic and external sources. For example, armchair graphene nanoribbons (AGNR) were found to have unprecedented band gap-strain dependence. Phosphorene nanoribbons (PNRs) demonstrate a different behavior, including a chemical scissors effect, and studies revealed a strong relationship between passivation species and band gap tunability. Unlike the super mechanical flexibility of AGNRs and PNRs which can sustain incredible strain, modest yet large strain was applied to group III-V nanowires such as GaAs/InAs. The calculations showed that a direct and indirect band gap transition occurs at some critical strains and the origination of these gap transitions were explored in detail. In addition to the pure nanowires, GaAs/InAs core/shell heterostructure nanowires were also studied. Due to the lattice mismatch between GaAs and InAs, the intrinsic strain in the core/shell nanowires demonstrates an interesting behavior on tuning the electronic properties. This interesting behavior suggests a mechanical way to exert compressive strain on nanowires experimentally, and can create a finite quantum confinement effect on the core.
ContributorsCopple, Andrew (Author) / Peng, Xihong (Thesis advisor) / Chan, Candace (Committee member) / Chizmeshya, Andrew (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2016
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Description
LiNbO3 and ZnO have shown great potential for photochemical surface reactions and specific photocatalytic processes. However, the efficiency of LiNbO3 is limited due to recombination or back reactions and ZnO exhibits a chemical instability in a liquid cell. In this dissertation, both materials were coated with precise thickness of metal

LiNbO3 and ZnO have shown great potential for photochemical surface reactions and specific photocatalytic processes. However, the efficiency of LiNbO3 is limited due to recombination or back reactions and ZnO exhibits a chemical instability in a liquid cell. In this dissertation, both materials were coated with precise thickness of metal oxide layers to passivate the surfaces and to enhance their photocatalytic efficiency. LiNbO3 was coated with plasma enhanced atomic layer deposited (PEALD) ZnO and Al2O3, and molecular beam deposited TiO2 and VO2. On the other hand, PEALD ZnO and single crystal ZnO were passivated with PEALD SiO2 and Al2O3.

Metal oxide/LiNbO3 heterostructures were immersed in aqueous AgNO3 solutions and illuminated with ultraviolet (UV) light to form Ag nanoparticle patterns. Alternatively, Al2O3 and SiO2/ZnO heterostructures were immersed in K3PO4 buffer solutions and studied for photoelectrochemical reactions. A fundamental aspect of the heterostructures is the band alignment and band bending, which was deduced from in situ photoemission measurements.

This research has provided insight to three aspects of the heterostructures. First, the band alignment at the interface of metal oxides/LiNbO3, and Al2O3 or SiO2/ZnO were used to explain the possible charge transfer processes and the direction of carrier flow in the heterostructures. Second, the effect of metal oxide coatings on the LiNbO3 with different internal carrier concentrations was related to the surface photochemical reactions. Third is the surface passivation and degradation mechanism of Al2O3 and SiO2 on ZnO was established. The heterostructures were characterized after stability tests using atomic force microscopy (AFM), scanning electron microscopy (SEM), and cross-section transmission electron microscopy (TEM).

The results indicate that limited thicknesses of ZnO or TiO2 on polarity patterned LiNbO3 (PPLN) enhances the Ag+ photoinduced reduction process. ZnO seems more efficient than TiO2 possibly due to a higher carrier mobility. However, an increase of the ZnO thickness (≥ 4 nm) reduced the effect of the PPLN substrate on the Ag nanoparticle pattern. For the case of Al2O3 and SiO2/ZnO heterostructures, SiO2 remains intact through 1 h stability tests. Unlike SiO2, Al2O3 shows surface degradation after a short stability test of a few minutes. Thus, SiO2 provides improved passivation over Al2O3. A detailed microscopy analysis indicates the underneath ZnO photocorrodes in the SiO2/ZnO samples, which is possibly due to transport of ions through the SiO2 protective layer.
ContributorsKaur, Manpuneet (Author) / Nemanich, Robert (Thesis advisor) / Dey, Sandwip (Committee member) / Crozier, Peter (Committee member) / Chan, Candace (Committee member) / Arizona State University (Publisher)
Created2016
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Description
In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD

In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN. The first study involved an in-depth case study of PEALD Al2O3 growth using dimethylaluminum isopropoxide, with a special focus on oxygen plasma effects. Saturated and self-limiting growth of Al2O3 films were obtained with an enhanced growth rate within the PEALD temperature window (25-220 ºC). The properties of Al2O3 deposited at various temperatures were characterized to better understand the relation between the growth parameters and film properties. In the second study, the interface electronic structures of PEALD dielectrics on Ga-face GaN films were measured. Five promising dielectrics (Al2O3, HfO2, SiO2, La2O3, and ZnO) with a range of band gap energies were chosen. Prior to dielectric growth, a combined wet chemical and in-situ H2/N2 plasma clean process was employed to remove the carbon contamination and prepare the surface for dielectric deposition. The surface band bending and band offsets were measured by XPS and UPS for dielectrics on GaN. The trends of the experimental band offsets on GaN were related to the dielectric band gap energies. In addition, the experimental band offsets were near the calculated values based on the charge neutrality level model. The third study focused on the effect of the polarization bound charge of the Ga- and N-face GaN on interface electronic structures. A surface pretreatment process consisting of a NH4OH wet chemical and an in-situ NH3 plasma treatment was applied to remove carbon contamination, retain monolayer oxygen coverage, and potentially passivate N-vacancy related defects. The surface band bending and polarization charge compensation of Ga- and N-face GaN were investigated. The surface band bending and band offsets were determined for Al2O3, HfO2, and SiO2 on Ga- and N-face GaN. Different dielectric thicknesses and post deposition processing were investigated to understand process related defect formation and/or reduction.
ContributorsYang, Jialing (Author) / Nemanich, Robert J (Thesis advisor) / Chen, Tingyong (Committee member) / Peng, Xihong (Committee member) / Ponce, Fernando (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2014
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Description
Tin (Sn) has a high-specific capacity (993 mAhg-1) as an anode material for Li-ion batteries. To overcome the poor cycling performance issue caused by its large volume expansion and pulverization during the charging and discharging process, many researchers put efforts into it. Most of the strategies are through nanostructured material

Tin (Sn) has a high-specific capacity (993 mAhg-1) as an anode material for Li-ion batteries. To overcome the poor cycling performance issue caused by its large volume expansion and pulverization during the charging and discharging process, many researchers put efforts into it. Most of the strategies are through nanostructured material design and introducing conductive polymer binders that serve as matrix of the active material in anode. This thesis aims for developing a novel method for preparing the anode to improve the capacity retention rate. This would require the anode to have high electrical conductivity, high ionic conductivity, and good mechanical properties, especially elasticity. Here the incorporation of a conducting polymer and a conductive hydrogel in Sn-based anodes using a one-step electrochemical deposition via a 3-electrode cell method is reported: the Sn particles and conductive component can be electrochemically synthesized and simultaneously deposited into a hybrid thin film onto the working electrode directly forming the anode. A well-defined three dimensional network structure consisting of Sn nanoparticles coated by conducting polymers is achieved. Such a conductive polymer-hydrogel network has multiple advantageous features: meshporous polymeric structure can offer the pathway for lithium ion transfer between the anode and electrolyte; the continuous electrically conductive polypyrrole network, with the electrostatic interaction with elastic, porous hydrogel, poly (2-acrylamido-2-methyl-1-propanesulfonic acid-co-acrylonitrile) (PAMPS) as both the crosslinker and doping anion for polypyrrole (PPy) can decrease the volume expansion by creating porous scaffold and softening the system itself. Furthermore, by increasing the amount of PAMPS and creating an interval can improve the cycling performance, resulting in improved capacity retention about 80% after 20 cycles, compared with only 54% of that of the control sample without PAMPS. The cycle is performed under current of 0.1 C.
ContributorsGao, Tianxiang (Author) / He, Ximin (Thesis advisor) / Sieradzki, Karl (Committee member) / Chan, Candace (Committee member) / Arizona State University (Publisher)
Created2015