Matching Items (34)
Description
This thesis addresses certain quantum aspects of the event horizon using the AdS/CFT correspondence. This correspondence is profound since it describes a quantum theory of gravity in d + 1 dimensions from the perspective of a dual quantum field theory living in d dimensions. We begin by considering Rindler space which is the part of Minkowski space seen by an observer with a constant proper acceleration. Because it has an event horizon, Rindler space has been studied in great detail within the context of quantum field theory. However, a quantum gravitational treatment of Rindler space is handicapped by the fact that quantum gravity in flat space is poorly understood. By contrast, quantum gravity in anti-de Sitter space (AdS), is relatively well understood via the AdS/CFT correspondence. Taking this cue, we construct Rindler coordinates for AdS (Rindler-AdS space) in d + 1 spacetime dimensions. In three spacetime dimensions, we find novel one-parameter families of stationary vacua labeled by a rotation parameter β. The interesting thing about these rotating Rindler-AdS spaces is that they possess an observer-dependent ergoregion in addition to having an event horizon. Turning next to the application of AdS/CFT correspondence to Rindler-AdS space, we posit that the two Rindler wedges in AdSd+1 are dual to an entangled conformal field theory (CFT) that lives on two boundaries with geometry R × Hd-1. Specializing to three spacetime dimensions, we derive the thermodynamics of Rindler-AdS space using the boundary CFT. We then probe the causal structure of the spacetime by sending in a time-like source and observe that the CFT “knows” when the source has fallen past the Rindler horizon. We conclude by proposing an alternate foliation of Rindler-AdS which is dual to a CFT living in de Sitter space. Towards the end, we consider the concept of weak measurements in quantum mechanics, wherein the measuring instrument is weakly coupled to the system being measured. We consider such measurements in the context of two examples, viz. the decay of an excited atom, and the tunneling of a particle trapped in a well, and discuss the salient features of such measurements.
ContributorsSamantray, Prasant (Author) / Parikh, Maulik (Thesis advisor) / Davies, Paul (Committee member) / Vachaspati, Tanmay (Committee member) / Easson, Damien (Committee member) / Alarcon, Ricardo (Committee member) / Arizona State University (Publisher)
Created2012
Description
Monte Carlo methods often used in nuclear physics, such as auxiliary field diffusion Monte Carlo and Green's function Monte Carlo, have typically relied on phenomenological local real-space potentials containing as few derivatives as possible, such as the Argonne-Urbana family of interactions, to make sampling simple and efficient. Basis set methods such as no-core shell model or coupled-cluster techniques typically use softer non-local potentials because of their more rapid convergence with basis set size. These non-local potentials are typically defined in momentum space and are often based on effective field theory. Comparisons of the results of the two types of methods are complicated by the use of different potentials. This thesis discusses progress made in using such non-local potentials in quantum Monte Carlo calculations of light nuclei. In particular, it shows methods for evaluating the real-space, imaginary-time propagators needed to perform quantum Monte Carlo calculations using non-local potentials and universality properties of these propagators, how to formulate a good trial wave function for non-local potentials, and how to perform a "one-step" Green's function Monte Carlo calculation for non-local potentials.
ContributorsLynn, Joel E (Author) / Schmidt, Kevin E (Thesis advisor) / Alarcon, Ricardo (Committee member) / Lebed, Richard (Committee member) / Shovkovy, Igor (Committee member) / Shumway, John (Committee member) / Arizona State University (Publisher)
Created2013
Description
The theory of quantum electrodynamics predicts that beta decay of the neutron into a proton, electron, and anti-neutrino should be accompanied by a continuous spectrum of photons. A recent experiment, RDK I, reported the first detection of radiative decay photons from neutron beta decay with a branching ratio of (3.09 ± 0.32) × 10-3 in the energy range of 15 keV to 340 keV. This was achieved by prompt coincident detection of an electron and photon, in delayed coincidence with a proton. The photons were detected by using a single bar of bismuth germanate scintillating crystal coupled to an avalanche photodiode. This thesis deals with the follow-up experiment, RDK II, to measure the branching ratio at the level of approximately 1% and the energy spectrum at the level of a few percent. The most significant improvement of RDK II is the use of a photon detector with about an order of magnitude greater solid angle coverage than RDK I. In addition, the detectable energy range has been extended down to approximately 250 eV and up to the endpoint energy of 782 keV. This dissertation presents an overview of the apparatus, development of a new data analysis technique for radiative decay, and results for the ratio of electron-proton-photon coincident Repg to electron-proton coincident Rep events.
ContributorsO'Neill, Benjamin (Author) / Alarcon, Ricardo (Thesis advisor) / Drucker, Jeffery (Committee member) / Lebed, Richard (Committee member) / Comfort, Joseph (Committee member) / Chamberlin, Ralph (Committee member) / Arizona State University (Publisher)
Created2012
Description
In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD dielectric growth process optimization, (2) interface electronic structure of comparative PEALD dielectrics on GaN, and (3) interface electronic structure of PEALD dielectrics on Ga- and N-face GaN. The first study involved an in-depth case study of PEALD Al2O3 growth using dimethylaluminum isopropoxide, with a special focus on oxygen plasma effects. Saturated and self-limiting growth of Al2O3 films were obtained with an enhanced growth rate within the PEALD temperature window (25-220 ºC). The properties of Al2O3 deposited at various temperatures were characterized to better understand the relation between the growth parameters and film properties. In the second study, the interface electronic structures of PEALD dielectrics on Ga-face GaN films were measured. Five promising dielectrics (Al2O3, HfO2, SiO2, La2O3, and ZnO) with a range of band gap energies were chosen. Prior to dielectric growth, a combined wet chemical and in-situ H2/N2 plasma clean process was employed to remove the carbon contamination and prepare the surface for dielectric deposition. The surface band bending and band offsets were measured by XPS and UPS for dielectrics on GaN. The trends of the experimental band offsets on GaN were related to the dielectric band gap energies. In addition, the experimental band offsets were near the calculated values based on the charge neutrality level model. The third study focused on the effect of the polarization bound charge of the Ga- and N-face GaN on interface electronic structures. A surface pretreatment process consisting of a NH4OH wet chemical and an in-situ NH3 plasma treatment was applied to remove carbon contamination, retain monolayer oxygen coverage, and potentially passivate N-vacancy related defects. The surface band bending and polarization charge compensation of Ga- and N-face GaN were investigated. The surface band bending and band offsets were determined for Al2O3, HfO2, and SiO2 on Ga- and N-face GaN. Different dielectric thicknesses and post deposition processing were investigated to understand process related defect formation and/or reduction.
ContributorsYang, Jialing (Author) / Nemanich, Robert J (Thesis advisor) / Chen, Tingyong (Committee member) / Peng, Xihong (Committee member) / Ponce, Fernando (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2014
Description
Spin-orbit interactions are important in determining nuclear structure. They lead to a shift in the energy levels in the nuclear shell model, which could explain the sequence of magic numbers in nuclei. Also in nucleon-nucleon scattering, the large nucleon polarization observed perpendicular to the plane of scattering needs to be explained by adding the spin-orbit interactions in the potential. Their effects change the equation of state and other properties of nuclear matter. Therefore, the simulation of spin-orbit interactions is necessary in nuclear matter.
The auxiliary field diffusion Monte Carlo is an effective and accurate method for calculating the ground state and low-lying exited states in nuclei and nuclear matter. It has successfully employed the Argonne v6' two-body potential to calculate the equation of state in nuclear matter, and has been applied to light nuclei with reasonable agreement with experimental results. However, the spin-orbit interactions were not included in the previous simulations, because the isospin-dependent spin-orbit potential is difficult in the quantum Monte Carlo method. This work develops a new method using extra auxiliary fields to break up the interactions between nucleons, so that the spin-orbit interaction with isospin can be included in the Hamiltonian, and ground-state energy and other properties can be obtained.
The auxiliary field diffusion Monte Carlo is an effective and accurate method for calculating the ground state and low-lying exited states in nuclei and nuclear matter. It has successfully employed the Argonne v6' two-body potential to calculate the equation of state in nuclear matter, and has been applied to light nuclei with reasonable agreement with experimental results. However, the spin-orbit interactions were not included in the previous simulations, because the isospin-dependent spin-orbit potential is difficult in the quantum Monte Carlo method. This work develops a new method using extra auxiliary fields to break up the interactions between nucleons, so that the spin-orbit interaction with isospin can be included in the Hamiltonian, and ground-state energy and other properties can be obtained.
ContributorsZhang, Jie (Author) / Schmidt, Kevin E (Thesis advisor) / Alarcon, Ricardo (Committee member) / Lebed, Richard (Committee member) / Shumway, John (Committee member) / Arizona State University (Publisher)
Created2014
Description
The nucleon resonance spectrum consists of many overlapping excitations. Polarization observables are an important tool for understanding and clarifying these spectra. While there is a large data base of differential cross sections for the process, very few data exist for polarization observables. A program of double polarization experiments has been conducted at Jefferson Lab using a tagged polarized photon beam and a frozen spin polarized target (FROST). The results presented here were taken during the first running period of FROST using the CLAS detector at Jefferson Lab with photon energies ranging from 329 MeV to 2.35 GeV. Data are presented for the E polarization observable for eta meson photoproduction on the proton from threshold (W=1500 MeV) to W=1900 MeV. Comparisons to the partial wave analyses of SAID and Bonn-Gatchina along with the isobar analysis of eta-MAID are made. These results will help distinguish between current theoretical predictions and refine future theories.
ContributorsMorrison, Brian (Author) / Ritchie, Barry (Thesis advisor) / Dugger, Michael (Committee member) / Shovkovy, Igor (Committee member) / Davies, Paul (Committee member) / Alarcon, Ricardo (Committee member) / Arizona State University (Publisher)
Created2011
Description
Quark matter at sufficiently high density and low temperature is expected to be a color superconductor, and may exist in the interior of neutron stars. The properties of two simplest possible color-superconducting phases, i.e., the color-flavor-locked (CFL) and two-flavor superconducting (2SC) phases, are reviewed. The effect of a magnetic field on the pairing dynamics in two-flavor color-superconducting dense quark matter is investigated. A universal form of the gap equation for an arbitrary magnetic field is derived in the weakly coupled regime of QCD at asymptotically high density, using the framework of Schwinger-Dyson equation in the improved rainbow approximation. The results for the gap in two limiting cases, weak and strong magnetic fields, are obtained and discussed. It is shown that the superconducting gap function in the weak magnetic field limit develops a directional dependence in momentum space. This property of the gap parameter is argued to be a consequence of a long-range interaction in QCD.
ContributorsYu, Lang (Author) / Shovkovy, Igor A. (Thesis advisor) / Lunardini, Cecilia (Committee member) / Schmidt, Kevin (Committee member) / Alarcon, Ricardo (Committee member) / Lebed, Richard (Committee member) / Arizona State University (Publisher)
Created2012
Description
This thesis deals with the first measurements done with a cold neutron beam at the Spallation Neutron Source at Oak Ridge National Laboratory. The experimental technique consisted of capturing polarized cold neutrons by nuclei to measure parity-violation in the angular distribution of the gamma rays following neutron capture. The measurements presented here for the nuclei Chlorine ( 35Cl) and Aluminum ( 27Al ) are part of a program with the ultimate goal of measuring the asymmetry in the angular distribution of gamma rays emitted in the capture of neutrons on protons, with a precision better than 10-8, in order to extract the weak hadronic coupling constant due to pion exchange interaction with isospin change equal with one ( hπ 1). Based on theoretical calculations asymmetry in the angular distribution of the gamma rays from neutron capture on protons has an estimated size of 5·10-8. This implies that the Al parity violation asymmetry and its uncertainty have to be known with a precision smaller than 4·10-8. The proton target is liquid Hydrogen (H2) contained in an Aluminum vessel. Results are presented for parity violation and parity-conserving asymmetries in Chlorine and Aluminum. The systematic and statistical uncertainties in the calculation of the parity-violating and parity-conserving asymmetries are discussed.
ContributorsBalascuta, Septimiu (Author) / Alarcon, Ricardo (Thesis advisor) / Belitsky, Andrei (Committee member) / Doak, Bruce (Committee member) / Comfort, Joseph (Committee member) / Schmidt, Kevin (Committee member) / Arizona State University (Publisher)
Created2012
Description
Diamond and cubic boron nitride (c-BN) are ultra wide band gap semiconductors (Eg>3.4 eV) and share similar properties in various aspects, including being isoelectronic, a 1% lattice mismatch, large band gap, high thermal conductivity. Particularly, the negative electron affinity (NEA) of diamond and c-BN is an unusual property that has led to effects such as p-type surface conductivity, low temperature thermionic emission, and photon enhanced thermionic emission. In this dissertation, the interface chemistry and electronic structure of dielectrics on diamond and c-BN are investigated with X-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The first study established that the surface conductive states could be established for thin Al2O3 on diamond using a post deposition H-plasma process. At each step of the atomic layer deposition (ALD) and plasma processing, the band alignment was characterized by in situ photoemission and related to interface charges. An interface layer between the diamond and dielectric layer was proposed to explain the surface conductivity. The second study further investigated the improvement of the hole mobility of surface conductive diamond. A thin layer of Al2O3 was employed as an interfacial layer between surface conductive hydrogen-terminated (H-terminated) diamond and MoO3 to increase the distance between the hole accumulation layer in diamond and negatively charged states in acceptor layer. With an interfacial layer, the ionic scattering, which was considered to limit the hole mobility, was reduced. By combining two oxides (Al2O3 and MoO3), the hole mobility and concentration were modulated by altering the thickness of the Al2O3 interfacial layer. The third study focused on the electronic structure of vanadium-oxide-terminated c-BN surfaces. The vanadium-oxide-termination was formed on c-BN by combining vanadium deposition using molecular beam deposition (MBD) and oxygen plasma treatment. After thermal annealing, a thermally stable NEA was achieved on c-BN. A model was proposed based on the deduced interface charge distribution to explain the establishment of an NEA.
ContributorsYang, Yu (Author) / Nemanich, Robert J (Thesis advisor) / McCartney, Martha (Committee member) / Ponce, Fernando (Committee member) / Qing, Quan (Committee member) / Arizona State University (Publisher)
Created2018
In-situ photoemission spectroscopy characterization of electronic states in semiconductor interfaces
Description
The electronic states of semiconductor interfaces have significant importance for semiconductor device performance, especially due to the continuing miniaturization of device technology.
The application of ultra high vacuum (UHV) enables the preparation and characterization of fresh and cleaned interfaces. In a UHV environment, photoemission spectroscopy (PES) provides a non-destructive method to measure the electronic band structure, which is a crucial component of interface properties.
In this dissertation, three semiconductor interfaces were studies to understand different effects on electronic states. The interfaces studied were freshly grown or pre-treated under UHV. Then in-situ PES measurements, including x-ray photoemission spectroscopy (XPS) and ultra-violet photoemission spectroscopy (UPS), were conducted to obtain electronic states information.
First, the CdTe/InSb (100) heterointerface was employed as a model interface for II-VI and III-V heterojunctions. It was suggested that an interface layer formed, which consisted of In-Te bonding. The non-octal bonding between In and Te atoms has donor-like behavior, which was proposed to result in an electron accumulation layer in InSb. A type-I heterointerface was observed. Second, Cu/ZnO interfaces were studied to understand the interface bonding and the role of polarization on ZnO interfaces. It was shown that on O-face ZnO (0001) and PEALD ZnO, copper contacts had ohmic behavior. However, on Zn-face ZnO (0001), a 0.3 eV Schottky barrier height was observed. The lower than expected barrier heights were attributed to oxygen vacancies introduced by Cu-O bonding during interface formation. In addition, it is suggested that the different barrier heights on two sides of ZnO (0001) are caused by the different behavior for the ZnO (0001) faces. Last, a pulse mode deposition method was applied for P-doped diamond growth on (100) diamond surfaces. Pretreatment effects were studied. It is suggested that an O/H plasma treatment or a short period of H-plasma and CH4/H2 plasma could yield a higher growth rate. PES measurements were conducted on H-terminated intrinsic diamond surface and P-doped/intrinsic diamond (100) interfaces. It was suggested that electronic states near the valence band maximum caused Fermi level pinning effects, independent of the diamond doping.
The application of ultra high vacuum (UHV) enables the preparation and characterization of fresh and cleaned interfaces. In a UHV environment, photoemission spectroscopy (PES) provides a non-destructive method to measure the electronic band structure, which is a crucial component of interface properties.
In this dissertation, three semiconductor interfaces were studies to understand different effects on electronic states. The interfaces studied were freshly grown or pre-treated under UHV. Then in-situ PES measurements, including x-ray photoemission spectroscopy (XPS) and ultra-violet photoemission spectroscopy (UPS), were conducted to obtain electronic states information.
First, the CdTe/InSb (100) heterointerface was employed as a model interface for II-VI and III-V heterojunctions. It was suggested that an interface layer formed, which consisted of In-Te bonding. The non-octal bonding between In and Te atoms has donor-like behavior, which was proposed to result in an electron accumulation layer in InSb. A type-I heterointerface was observed. Second, Cu/ZnO interfaces were studied to understand the interface bonding and the role of polarization on ZnO interfaces. It was shown that on O-face ZnO (0001) and PEALD ZnO, copper contacts had ohmic behavior. However, on Zn-face ZnO (0001), a 0.3 eV Schottky barrier height was observed. The lower than expected barrier heights were attributed to oxygen vacancies introduced by Cu-O bonding during interface formation. In addition, it is suggested that the different barrier heights on two sides of ZnO (0001) are caused by the different behavior for the ZnO (0001) faces. Last, a pulse mode deposition method was applied for P-doped diamond growth on (100) diamond surfaces. Pretreatment effects were studied. It is suggested that an O/H plasma treatment or a short period of H-plasma and CH4/H2 plasma could yield a higher growth rate. PES measurements were conducted on H-terminated intrinsic diamond surface and P-doped/intrinsic diamond (100) interfaces. It was suggested that electronic states near the valence band maximum caused Fermi level pinning effects, independent of the diamond doping.
ContributorsWang, Xingye (Author) / Nemanich, Robert J (Thesis advisor) / Chan, Candace (Committee member) / Ponce, Fernando (Committee member) / Holman, Zachary (Committee member) / Arizona State University (Publisher)
Created2018