Matching Items (109)
Description
This research focuses mainly on employing tunable materials to achieve dynamic radiative properties for spacecraft and building thermal management. A secondary objective is to investigate tunable materials for optical propulsion applications. The primary material investigated is vanadium dioxide (VO2), which is a thermochromic material with an insulator-to-metal phase transition. VO2 typically undergoes a dramatic shift in optical properties at T = 341 K, which can be reduced through a variety of techniques to a temperature more suitable for thermal control applications. A VO2-based Fabry-Perot variable emitter is designed, fabricated, characterized, and experimentally demonstrated. The designed emitter has high emissivity when the radiating surface temperature is above 345 K and low emissivity when the temperature is less than 341 K. A uniaxial transfer matrix method and Bruggeman effective medium theory are both introduced to model the anisotropic properties of the VO2 to facilitate the design of multilayer VO2-based devices. A new furnace oxidation process is developed for fabricating high quality VO2 and the resulting thin films undergo comprehensive material and optical characterizations. The corresponding measurement platform is developed to measure the temperature-dependent transmittance and reflectance of the fabricated Fabry-Perot samples. The variable heat rejection of the fabricated samples is demonstrated via bell jar and cryothermal vacuum calorimetry measurements. Thermal modeling of a spacecraft equipped with variable emittance radiators is also conducted to elucidate the requirements and the impact for thermochromic variable emittance technology.
The potential of VO2 to be used as an optical force modulating device is also investigated for spacecraft micropropulsion. The preliminary design considers a Fabry-Perot cavity with an anti-reflection coating which switches between an absorptive “off” state (for insulating VO2) and a reflective “on” state (for metallic VO2), thereby modulating the incident solar radiation pressure. The visible and near-infrared optical properties of the fabricated vanadium dioxide are examined to determine if there is a sufficient optical property shift in those regimes for a tunable device.
The potential of VO2 to be used as an optical force modulating device is also investigated for spacecraft micropropulsion. The preliminary design considers a Fabry-Perot cavity with an anti-reflection coating which switches between an absorptive “off” state (for insulating VO2) and a reflective “on” state (for metallic VO2), thereby modulating the incident solar radiation pressure. The visible and near-infrared optical properties of the fabricated vanadium dioxide are examined to determine if there is a sufficient optical property shift in those regimes for a tunable device.
ContributorsTaylor, Sydney June (Author) / Wang, Liping (Thesis advisor) / Wells, Valana (Committee member) / Yu, Hongbin (Committee member) / Wang, Robert (Committee member) / Thangavelautham, Jekanthan (Committee member) / Massina, Christopher J (Committee member) / Arizona State University (Publisher)
Created2020
Description
Wurtzite (B, Ga, Al) N semiconductors, especially (Ga, Al) N material systems, demonstrate immense promises to boost the economic growth in the semiconductor industry that is approaching the end of Moore’s law. At the material level, their high electric field strength, high saturation velocity, and unique heterojunction polarization charge have enabled tremendous potentials for high power, high frequency, and photonic applications. With the availability of large-area bulk GaN substrates and high-quality epilayer on foreign substrates, the power conversion applications of GaN are now at the cusp of commercialization.Despite these encouraging advances, there remain two critical hurdles in GaN-based technology: selective area doping and hole-based p-channel devices. Current selective area doping methods are still immature and lead to low-quality lateral p-n junctions, which prevent the realization of advanced power transistors and rectifiers. The missing of hole-based p-channel devices hinders the development of GaN complementary integrated circuits.
This thesis comprehensively studied these challenges. The first part (chapter 2) researched the selective area doping by etch-then-regrow. A GaN-based vertical-channel junction field-effect transistors (VC-JFETs) was experimentally demonstrated by blanket regrowth and self-planarization. The devices’ electrical performances were characterized to understand the regrowth quality. The non-ideal factors during p-GaN regrowth were also discussed. The second part (chapter 3-5) systematically studied the application of the hydrogen plasma treatment process to change the p-GaN properties selectively. A novel GaN-based metal-insulator-semiconductor junction was demonstrated. Then a novel edge termination design with avalanche breakdown capability achieved in GaN power rectifiers is proposed. The last part (Chapter 6) demonstrated a GaN-based p-channel heterojunction field-effect transistor, with record low leakage, subthreshold swing, and a record high on/off ratio. In the end, some outlook and future work have also been proposed.
Although in infancy, the demonstrated etch-then-regrow and the hydrogen plasma treatment methods have the potential to ultimately solve the challenges in GaN and benefit the development of the wide-ultra-wide bandgap industry, technology, and society.
ContributorsYang, Chen (Author) / Zhao, Yuji (Thesis advisor) / Goodnick, Stephen (Committee member) / Yu, Hongbin (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2021
Description
This dissertation aims to study the electron and spin transport, scattering in two dimensional pseudospin-1 lattice systems, hybrid systems of topological insulator and magnetic insulators, and molecule chain systems. For pseudospin-1 systems, the energy band consists of a pair of Dirac cones and a flat band through the connecting point of the cones. First, contrary to the conditional wisdom that flatband can localize electrons, I find that in a non-equilibrium situation where a constant electric field is suddenly switched on, the flat band can enhance the resulting current in both the linear and nonlinear response regimes compared to spin-1/2 system. Second, in the setup of massive pseudospin-1 electron scattering over a gate potential scatterer, I discover the large resonant skew scattering called super skew scattering, which does not arise in the corresponding spin-1/2 system and massless pseudospin-1 system. Third, by applying an appropriate gate voltage to generate a cavity in an alpha-T3 lattice, I find the exponential decay of the quasiparticles from a chaotic cavity, with a one-to-one correspondence between the exponential decay rate and the Berry phase for the entire family of alpha-T3 materials. Based on the hybrid system of a ferromagnetic insulator on top of a topological insulator, I first investigate the magnetization dynamics of a pair of ferromagnetic insulators deposited on the surface of a topological insulator. The spin polarized current on the surface of topological insulator can affect the magnetization of the two ferromagnetic insulators through proximity effect, which in turn modulates the electron transport, giving rise to the robust phase locking between the two magnetization dynamics. Second, by putting a skyrmion structure on top of a topological insulator, I find robust electron skew scattering against skyrmion structure even with deformation, due to the emergence of resonant modes. The chirality of molecule can lead to spin polarized transport due to the spin orbit interaction. I investigate spin transport through a chiral polyacetylene molecule and uncover the emergence of spin Fano resonances as a manifestation of the chiral induced spin selectivity effect.
ContributorsWang, Chengzhen (Author) / Lai, Ying-Cheng (Thesis advisor) / Yu, Hongbin (Committee member) / Wang, Chao (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2021
Description
Wide bandgap semiconductors, also known as WBG semiconductors are materials which have larger bandgaps than conventional semiconductors such as Si or GaAs. They permit devices to operate at much higher voltages, frequencies and temperatures. They are the key material used to make LEDs, lasers, radio frequency applications, military applications, and power electronics. Their intrinsic qualities make them promising for next-generation devices for general semiconductor use. Their ability to handle higher power density is particularly attractive for attempts to sustain Moore's law, as conventional technologies appear to be reaching a bottleneck. Apart from WBG materials, ultra-wide bandgap (UWBG) materials, such as Ga2O3, AlN, diamond, or BN, are also attractive since they have even more extreme properties. Although this field is relatively new, which still remains a lot of effort to study and investigate, people can still expect that these materials could be the main characters for more advanced applications in the near future.
In the dissertation, three topics with power devices made by WBG or UWBG semiconductors were introduced. In chapter 1, a generally background knowledge introduction is given. This helps the reader to learn current research focuses. In chapter 2, a comprehensive study of temperature-dependent characteristics of Ga2O3 SBDs with highly-doped substrate is demonstrated. A modified thermionic emission model over an inhomogeneous barrier with a voltage-dependent barrier height is investigated. Besides, the mechanism of surface leakage current is also discussed. These results are beneficial for future developments of low-loss β-Ga2O3 electronics and optoelectronics. In chapter 3, vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures on bulk GaN substrates was introduced. This work represents a useful reference for the FMR termination design for GaN power devices. In chapter 4, AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) fabricated on Si substrates with a 10 nm boron nitride (BN) layer as gate dielectric was demonstrated. The material characterization was investigated by X-ray photoelectric spectroscopy (XPS) and UV photoelectron spectroscopy (UPS). And the gate leakage current mechanisms were also investigated by temperature-dependent current-voltage measurements.
Although still in its infancy, past and projected future progress of electronic designs will ultimately achieve this very goal that WBG and UWBG semiconductors will be indispensable for today and future’s science, technologies and society.
ContributorsYang, Tsung-Han (Author) / Zhao, Yuji (Thesis advisor) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Nemanich, Robert (Committee member) / Arizona State University (Publisher)
Created2021
Tunable Optical Gratings Based on Buckled Nanoscale Thin Films on Transparent Elastomeric Substrates
ContributorsYu, Cunjiang (Author) / O’Brien, Kevin (Author) / Zhang, Yong-Hang (Author) / Yu, Hongbin (Author) / Jiang, Hanqing (Author)
Created2010
Description
The coexistence of superconductivity and ferromagnetic orders has been the subject of study for many years. It well known that these materials possess two competing order parameters; however the two order parameters can coexist under special circumstances inducing interesting physical phenomena. In recent years the demand of ultra-low-power, high density cryogenic memories has brought considerable interest to integrate superconducting and magnetic thin films in one structure to produce novel memory elements. The operation of the device depends on the unusual electronic properties associated with the Superconductor (S) /Ferromagnetic (F) proximity effect.
Niobium (Nb) based Josephson junction devices were fabricated with barriers containing two ferromagnetic layers separated by a normal metal space layer. In device operation, electrons in the superconductor are injected into the ferromagnets, causing the superconductor wavefunction to shift its phase and decay in amplitude. Such devices have two different states that depend on the relative magnetization of their ferromagnetic barrier layers, parallel or antiparallel. In these different states, the junctions have different phase shifts and critical currents. Superconducting circuits containing these devices can be designed to operate as memory cells using either one of these outputs.
To quantify the shift in phase and amplitude decay of the wavefunction through a common ferromagnet, permalloy, a series of Nb/permalloy/Nb Josephson junctions with varying ferromagnetic layer thicknesses were fabricated. Data have shown that the optimal thickness of a fixed layer composed of permalloy is 2.4 nm, as it shifts the wavefunction phase to π/2, its “pivot point.” If set to precisely this value, the free layer in SFNF'S junctions will switch the junction into either the 0 or π state depending on its magnetic orientation. To minimize the free-layer switching energy dilute Cu-permalloy alloy [Cu0.7(Ni80Fe20)0.3] with a low magnetic saturation (Ms of ~80 emu/cm3) was used as the free layer. These devices exhibit switching energies at small magnetic fields, demonstrating their potential use for low power non-volatile memory for superconductor circuits.
Lastly, to study the proximity effect using other potentially-useful ferromagnetic layers, measurements were performed on Nb/F bilayers and Nb/F/AlOx/Al tunnel junctions with ferromagnets Ni8Fe19, Ni65Fe15Co20, and Pd1-xNix. The dependence of the critical temperature of the bilayers and density of states that propagated through the ferromagnetic layer were studied as a function of thickness. From this study, crucial magnetic and electrical parameters like magnetic coherence lengths (ξF), exchange energy (Eex), and the rate of shift in the wavefunction’s phase and amplitude as a function of thickness were determined.
Niobium (Nb) based Josephson junction devices were fabricated with barriers containing two ferromagnetic layers separated by a normal metal space layer. In device operation, electrons in the superconductor are injected into the ferromagnets, causing the superconductor wavefunction to shift its phase and decay in amplitude. Such devices have two different states that depend on the relative magnetization of their ferromagnetic barrier layers, parallel or antiparallel. In these different states, the junctions have different phase shifts and critical currents. Superconducting circuits containing these devices can be designed to operate as memory cells using either one of these outputs.
To quantify the shift in phase and amplitude decay of the wavefunction through a common ferromagnet, permalloy, a series of Nb/permalloy/Nb Josephson junctions with varying ferromagnetic layer thicknesses were fabricated. Data have shown that the optimal thickness of a fixed layer composed of permalloy is 2.4 nm, as it shifts the wavefunction phase to π/2, its “pivot point.” If set to precisely this value, the free layer in SFNF'S junctions will switch the junction into either the 0 or π state depending on its magnetic orientation. To minimize the free-layer switching energy dilute Cu-permalloy alloy [Cu0.7(Ni80Fe20)0.3] with a low magnetic saturation (Ms of ~80 emu/cm3) was used as the free layer. These devices exhibit switching energies at small magnetic fields, demonstrating their potential use for low power non-volatile memory for superconductor circuits.
Lastly, to study the proximity effect using other potentially-useful ferromagnetic layers, measurements were performed on Nb/F bilayers and Nb/F/AlOx/Al tunnel junctions with ferromagnets Ni8Fe19, Ni65Fe15Co20, and Pd1-xNix. The dependence of the critical temperature of the bilayers and density of states that propagated through the ferromagnetic layer were studied as a function of thickness. From this study, crucial magnetic and electrical parameters like magnetic coherence lengths (ξF), exchange energy (Eex), and the rate of shift in the wavefunction’s phase and amplitude as a function of thickness were determined.
ContributorsAbd El Qader, Makram (Author) / Newman, Nathan (Thesis advisor) / Rowell, John (Committee member) / Rizzo, Nick (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2016
Description
This dissertation will investigate two of the most promising high-capacity anode
materials for lithium-based batteries: silicon (Si) and metal lithium (Li). It will focus on
studying the mechanical behaviors of the two materials during charge and discharge and
understanding how these mechanical behaviors may affect their electrochemical
performance.
In the first part, amorphous Si anode will be studied. Despite many existing studies
on silicon (Si) anodes for lithium ion batteries (LIBs), many essential questions still exist
on compound formation, composition, and properties. Here it is shown that some
previously accepted findings do not truthfully reflect the actual lithiation mechanisms in
realistic battery configurations. Furthermore the correlation between structure and
mechanical properties in these materials has not been properly established. Here, a rigorous
and thorough study is performed to comprehensively understand the electrochemical
reaction mechanisms of amorphous-Si (a-Si) in a realistic LIB configuration. In-depth
microstructural characterization was performed and correlations were established between
Li-Si composition, volumetric expansion, and modulus/hardness. It is found that the
lithiation process of a-Si in a real battery setup is a single-phase reaction rather than the
accepted two-phase reaction obtained from in-situ TEM experiments. The findings in this
dissertation establish a reference to quantitatively explain many key metrics for lithiated a
Si as anodes in real LIBs, and can be used to rationally design a-Si based high-performance
LIBs guided by high-fidelity modeling and simulations.
In the second part, Li metal anode will be investigated. Problems related to dendrite
growth on lithium metal anodes such as capacity loss and short circuit present major
barriers to the next-generation high-energy-density batteries. The development of
successful mitigation strategies is impeded by the incomplete understanding of the Li
dendrite growth mechanisms. Here the enabling role of plating residual stress in dendrite
initiation through novel experiments of Li electrodeposition on soft substrates is confirmed,
and the observations is explained with a stress-driven dendrite growth model. Dendrite
growth is mitigated on such soft substrates through surface-wrinkling-induced stress
relaxation in deposited Li film. It is demonstrated that this new dendrite mitigation
mechanism can be utilized synergistically with other existing approaches in the form of
three-dimensional (3D) soft scaffolds for Li plating, which achieves superior coulombic
efficiency over conventional hard copper current collectors under large current density.
materials for lithium-based batteries: silicon (Si) and metal lithium (Li). It will focus on
studying the mechanical behaviors of the two materials during charge and discharge and
understanding how these mechanical behaviors may affect their electrochemical
performance.
In the first part, amorphous Si anode will be studied. Despite many existing studies
on silicon (Si) anodes for lithium ion batteries (LIBs), many essential questions still exist
on compound formation, composition, and properties. Here it is shown that some
previously accepted findings do not truthfully reflect the actual lithiation mechanisms in
realistic battery configurations. Furthermore the correlation between structure and
mechanical properties in these materials has not been properly established. Here, a rigorous
and thorough study is performed to comprehensively understand the electrochemical
reaction mechanisms of amorphous-Si (a-Si) in a realistic LIB configuration. In-depth
microstructural characterization was performed and correlations were established between
Li-Si composition, volumetric expansion, and modulus/hardness. It is found that the
lithiation process of a-Si in a real battery setup is a single-phase reaction rather than the
accepted two-phase reaction obtained from in-situ TEM experiments. The findings in this
dissertation establish a reference to quantitatively explain many key metrics for lithiated a
Si as anodes in real LIBs, and can be used to rationally design a-Si based high-performance
LIBs guided by high-fidelity modeling and simulations.
In the second part, Li metal anode will be investigated. Problems related to dendrite
growth on lithium metal anodes such as capacity loss and short circuit present major
barriers to the next-generation high-energy-density batteries. The development of
successful mitigation strategies is impeded by the incomplete understanding of the Li
dendrite growth mechanisms. Here the enabling role of plating residual stress in dendrite
initiation through novel experiments of Li electrodeposition on soft substrates is confirmed,
and the observations is explained with a stress-driven dendrite growth model. Dendrite
growth is mitigated on such soft substrates through surface-wrinkling-induced stress
relaxation in deposited Li film. It is demonstrated that this new dendrite mitigation
mechanism can be utilized synergistically with other existing approaches in the form of
three-dimensional (3D) soft scaffolds for Li plating, which achieves superior coulombic
efficiency over conventional hard copper current collectors under large current density.
ContributorsWang, Xu (Author) / Jiang, Hanqing (Thesis advisor) / Yu, Hongbin (Thesis advisor) / Chan, Candace (Committee member) / Wang, Liping (Committee member) / Qiong, Nian (Committee member) / Arizona State University (Publisher)
Created2018
Description
Energy harvesting from ambient is important to configuring Wireless Sensor Networks (WSN) for environmental data collecting. In this work, highly flexible thermoelectric generators (TEGs) have been studied and fabricated to supply power to the wireless sensor notes used for data collecting in hot spring environment. The fabricated flexible TEGs can be easily deployed on the uneven surface of heated rocks at the rim of hot springs. By employing the temperature gradient between the hot rock surface and the air, these TEGs can generate power to extend the battery lifetime of the sensor notes and therefore reduce multiple batteries changes where the environment is usually harsh in hot springs. Also, they show great promise for self-powered wireless sensor notes. Traditional thermoelectric material bismuth telluride (Bi2Te3) and advanced MEMS (Microelectromechanical systems) thin film techniques were used for the fabrication. Test results show that when a flexible TEG array with an area of 3.4cm2 was placed on the hot plate surface of 80°C in the air under room temperature, it had an open circuit voltage output of 17.6mV and a short circuit current output of 0.53mA. The generated power was approximately 7mW/m2.
On the other hand, high pressure, temperatures that can reach boiling, and the pH of different hot springs ranging from <2 to >9 make hot spring ecosystem a unique environment that is difficult to study. WSN allows many scientific studies in harsh environments that are not feasible with traditional instrumentation. However, wireless pH sensing for long time in situ data collection is still challenging for two reasons. First, the existing commercial-off-the-shelf pH meters are frequent calibration dependent; second, biofouling causes significant measurement error and drift. In this work, 2-dimentional graphene pH sensors were studied and calibration free graphene pH sensor prototypes were fabricated. Test result shows the resistance of the fabricated device changes linearly with the pH values (in the range of 3-11) in the surrounding liquid environment. Field tests show graphene layer greatly prevented the microbial fouling. Therefore, graphene pH sensors are promising candidates that can be effectively used for wireless pH sensing in exploration of hot spring ecosystems.
On the other hand, high pressure, temperatures that can reach boiling, and the pH of different hot springs ranging from <2 to >9 make hot spring ecosystem a unique environment that is difficult to study. WSN allows many scientific studies in harsh environments that are not feasible with traditional instrumentation. However, wireless pH sensing for long time in situ data collection is still challenging for two reasons. First, the existing commercial-off-the-shelf pH meters are frequent calibration dependent; second, biofouling causes significant measurement error and drift. In this work, 2-dimentional graphene pH sensors were studied and calibration free graphene pH sensor prototypes were fabricated. Test result shows the resistance of the fabricated device changes linearly with the pH values (in the range of 3-11) in the surrounding liquid environment. Field tests show graphene layer greatly prevented the microbial fouling. Therefore, graphene pH sensors are promising candidates that can be effectively used for wireless pH sensing in exploration of hot spring ecosystems.
ContributorsHan, Ruirui (Author) / Yu, Hongyu (Thesis advisor) / Jiang, Hanqing (Committee member) / Yu, Hongbin (Committee member) / Garnero, Edward (Committee member) / Li, Mingming (Committee member) / Arizona State University (Publisher)
Created2018
Description
Skin electronics is one of the most promising applications of stretchable electronics. The versatility of skin electronics can only be guaranteed when it has conformal contact with human skin. While both analytical and numerical solutions for contact between serpentine interconnects and soft substrate remain unreported, the motivation of this thesis is to render a novel method to numerically study the conformability of the serpentine interconnects. This thesis explained thoroughly how to conduct finite element analysis for the conformability of skin electronics, including modeling, meshing method and step setup etc.. User-defined elements were implemented to the finite element commercial package ABAQUS for the analysis of conformability. With thorough investigation into the conformability of Fermat’s spiral, it has been found that the kirigami based pattern exhibits high conformability. Since thickness is a key factor to design skin electronics, the thesis also talked about how the change of thickness of the skin electronics impacts on the conformability.
ContributorsFan, Yiling (Author) / Jiang, Hanqing (Thesis advisor) / Hildreth, Owen (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2015