Matching Items (4)
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Description
There has been a considerable growth in distributed photovoltaic (PV) genera-tion and its integration in electric power distribution systems. This has led to a change in the distribution system infrastructure. Properly planned distributed gen-eration can offer a variety of benefits for system operations and enhance opera-tional performance of the distribution

There has been a considerable growth in distributed photovoltaic (PV) genera-tion and its integration in electric power distribution systems. This has led to a change in the distribution system infrastructure. Properly planned distributed gen-eration can offer a variety of benefits for system operations and enhance opera-tional performance of the distribution system. However, high penetration of PV resources can give rise to operating conditions which do not arise in traditional systems and one of the potential issues that needs to be addressed involves impact on power quality of the system with respect to the spectral distortion in voltages and currents.

The test bed feeder model representing a real operational distribution feeder is developed in OpenDSS and the feeder modeling takes into consideration the ob-jective of analysis and frequency of interest. Extensive metering infrastructure and measurements are utilized for validation of the model at harmonic frequencies. The harmonic study performed is divided into two sections: study of impact of non-linear loads on total harmonic voltage and current distortions and study of impact of PV resources on high frequency spectral distortion in voltages and cur-rents. The research work incorporates different harmonic study methodologies such as harmonic and high frequency power flow, and frequency scan study. The general conclusions are presented based on the simulation results and in addition, scope for future work is discussed.
ContributorsJoshi, Titiksha Vjay (Author) / Heydt, Gerald T (Thesis advisor) / Ayyanar, Raja (Committee member) / Vittal, Vijay (Committee member) / Arizona State University (Publisher)
Created2014
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Description
Presently, hard-switching buck/boost converters are dominantly used for automotive applications. Automotive applications have stringent system requirements for dc-dc converters, such as wide input voltage range and limited EMI noise emission. High switching frequency of the dc-dc converters is much desired in automotive applications for avoiding AM band interference and for

Presently, hard-switching buck/boost converters are dominantly used for automotive applications. Automotive applications have stringent system requirements for dc-dc converters, such as wide input voltage range and limited EMI noise emission. High switching frequency of the dc-dc converters is much desired in automotive applications for avoiding AM band interference and for compact size. However, hard switching buck converter is not suitable at high frequency operation because of its low efficiency. In addition, buck converter has high EMI noise due to its hard-switching. Therefore, soft-switching topologies are considered in this thesis work to improve the performance of the dc-dc converters.

Many soft-switching topologies are reviewed but none of them is well suited for the given automotive applications. Two soft-switching PWM converters are proposed in this work. For low power automotive POL applications, a new active-clamp buck converter is proposed. Comprehensive analysis of this converter is presented. A 2.2 MHz, 25 W active-clamp buck converter prototype with Si MOSFETs was designed and built. The experimental results verify the operation of the converter. For 12 V to 5 V conversion, the Si based prototype achieves a peak efficiency of 89.7%. To further improve the efficiency, GaN FETs are used and an optimized SR turn-off delay is employed. Then, a peak efficiency of 93.22% is achieved. The EMI test result shows significantly improved EMI performance of the proposed active-clamp buck converter. Last, large- and small-signal models of the proposed converter are derived and verified by simulation.

For automotive dual voltage system, a new bidirectional zero-voltage-transition (ZVT) converter with coupled-inductor is proposed in this work. With the coupled-inductor, the current to realize zero-voltage-switching (ZVS) of main switches is much reduced and the core loss is minimized. Detailed analysis and design considerations for the proposed converter are presented. A 1 MHz, 250 W prototype is designed and constructed. The experimental results verify the operation. Peak efficiencies of 93.98% and 92.99% are achieved in buck mode and boost mode, respectively. Significant efficiency improvement is achieved from the efficiency comparison between the hard-switching buck converter and the proposed ZVT converter with coupled-inductor.
ContributorsNan, Chenhao (Author) / Ayyanar, Raja (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Karady, George G. (Committee member) / Qin, Jiangchao (Committee member) / Arizona State University (Publisher)
Created2016
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Description
Due to the reduced fuel usage and greenhouse emission advantage, the sales of electric vehicles (EV) have risen dramatically in recent years. Generally speaking, the EVs are pursuing higher power and lighter weight, which requires higher power density for all the power electronics converters in the EVs. To design higher

Due to the reduced fuel usage and greenhouse emission advantage, the sales of electric vehicles (EV) have risen dramatically in recent years. Generally speaking, the EVs are pursuing higher power and lighter weight, which requires higher power density for all the power electronics converters in the EVs. To design higher density power converters, three key emerging power electronics technologies are investigated in this study. First, the PCB-based magnetics are beneficial for improving the power density due to their low-profile structure. However, the high winding capacitance is considered one of the significant drawbacks of PCB-based magnetics. In this study, a novel winding structure is proposed to cut down the winding capacitance by 75% with little compromise of the winding loss. Second, the synchronous rectifiers (SR) are usually utilized to improve the system efficiency and power density compared with the conventional diode bridge rectifiers for the AC/DC stage in the power converters. The SRs are desired to be turned off at current zero-crossing to generate a minimal loss. However, the precise current zero-crossing detection is very challenging in high-frequency and high-power-density converters. In this study, a high-dv/dt-immune and parameter-adaptive SR driving scheme is proposed to guarantee the zero-current switching (ZCS) of SRs in various operating conditions and improve the system efficiency by 1.23%. Finally, Gallium Nitride (GaN) semiconductors are considered less lossy than Silicon (Si) semiconductors. However, the voltage rating of the commercial GaN HEMTs is limited to 600/650 V due to the lateral structure, which is not suitable for the 800 V or higher dc-link voltage EV systems. Stacking the low-voltage rating devices is a straightforward approach to sustain higher dc-link voltage. However, unbalanced voltage sharing can occur, which can damage the low-voltage rating devices in the stack. In this study, a novel active current source gate driver is proposed to suppress the over-voltage of the stacking devices below 10% for all operating conditions without sacrificing switching speed or switching energy. The above emerging power electronics technologies are investigated thoroughly in the dissertation. The proposed approaches are practical for improving power converters’ density in future EV applications.
ContributorsZhang, Zhengda (Author) / Lei, Qin Q.L. (Thesis advisor) / Ayyanar, Raja R.A. (Committee member) / Yu, Hongbin H.Y. (Committee member) / Pal, Anamitra A.P. (Committee member) / Ranjram, Mike M.R. (Committee member) / Arizona State University (Publisher)
Created2021
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Description
Diamond as a wide-bandgap (WBG) semiconductor material has distinct advantages for power electronics applications over Si and other WBG materials due to its high critical electric field (> 10 MV/cm), high electron and hole mobility (??=4500 cm2/V-s, ??=3800 cm2/V-s), high thermal conductivity (~22 W/cm-K) and large bandgap (5.47 eV). Owing

Diamond as a wide-bandgap (WBG) semiconductor material has distinct advantages for power electronics applications over Si and other WBG materials due to its high critical electric field (> 10 MV/cm), high electron and hole mobility (??=4500 cm2/V-s, ??=3800 cm2/V-s), high thermal conductivity (~22 W/cm-K) and large bandgap (5.47 eV). Owing to its remarkable properties, the application space of WBG materials has widened into areas requiring very high current, operating voltage and temperature. Remarkable progress has been made in demonstrating high breakdown voltage (>10 kV), ultra-high current density (> 100 kA/cm2) and ultra-high temperature (~1000oC) diamond devices, giving further evidence of diamond’s huge potential. However, despite the great success, fabricated diamond devices have not yet delivered diamond’s true potential. Some of the main reasons are high dopant activation energies, substantial bulk defect and trap densities, high contact resistance, and high leakage currents. A lack of complete understanding of the diamond specific device physics also impedes the progress in correct design approaches. The main three research focuses of this work are high power, high frequency and high temperature. Through the design, fabrication, testing, analysis and modeling of diamond p-i-n and Schottky diodes a milestone in diamond research is achieved and gain important theoretical understanding. In particular, a record highest current density in diamond diodes of ~116 kA/cm2 is demonstrated, RF characterization of diamond diodes is performed from 0.1 GHz to 25 GHz and diamond diodes are successfully tested in extreme environments of 500oC and ~93 bar of CO2 pressure. Theoretical models are constructed analytically and inii Silvaco ATLAS including incomplete ionization and hopping mobility to explain space charge limited current phenomenon, effects of traps and Mott-Gurney dominated diode ???. A new interpretation of the Baliga figure of merit for WBG materials is also formulated and a new cubic relationship between ??? and breakdown voltage is established. Through Silvaco ATLAS modeling, predictions on the power limitation of diamond diodes in receiver-protector circuits is made and a range of self-heating effects is established. Poole-Frenkel emission and hopping conduction models are also utilized to analyze high temperature (500oC) leakage behavior of diamond diodes. Finally, diamond JFET simulations are performed and designs are proposed for high temperature – extreme environment applications.
ContributorsSurdi, Harshad (Author) / Goodnick, Stephen M (Thesis advisor) / Nemanich, Robert J (Committee member) / Thornton, Trevor J (Committee member) / Lyons, James R (Committee member) / Arizona State University (Publisher)
Created2022